Patents by Inventor H. T. Yang

H. T. Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating gate oxide
    Patent number: 6121095
    Abstract: A method for fabricating gate oxide includes a dilute wet oxidation process with additional nitrogen and moisture and an annealing process with a nitrogen base gas, wherein the volume of additional nitrogen is about 6-12 times of the volume of the additional moisture. The method according to the invention improves the electrical quality of the gate oxide by raising the Q.sub.bd and by reducing the leakage current of the gate oxide.
    Type: Grant
    Filed: November 13, 1998
    Date of Patent: September 19, 2000
    Assignee: United Integrated Circuits Corp.
    Inventors: Yu-Shan Tai, H. T. Yang, Hsueh-Hao Shih, Kuen-Chu Chen
  • Method for fabricating gate oxide
    Patent number: RE40113
    Abstract: A method for fabricating gate oxide includes a dilute wet oxidation process with additional nitrogen and moisture and an annealing process with a nitrogen base gas, wherein the volume of additional nitrogen is about 6-12 6-20 times of the volume of the additional moisture. The method according to the invention improves the electrical quality of the gate oxide by raising the Qbd and by reducing the leakage current of the gate oxide.
    Type: Grant
    Filed: September 17, 2002
    Date of Patent: February 26, 2008
    Assignee: United Microelectronics Corp.
    Inventors: Yu-Shan Tai, H. T. Yang, Hsueh-Hao Shih, Kuen-Chu Chen