Abstract: A display panel and an OLED display device using the same are disclosed. The display panel includes an active region including data lines, gate lines crossing the data lines, and pixels arranged in a matrix, and a shift register arranged distributively in the active region and configured to supply a gate pulse to the gate lines.

Abstract: The present embodiments disclose a light emitting device. The light emitting device disclosed includes a first conductive semiconductor layer; an active layer that is disposed on a first conductive semiconductor layer and generates ultraviolet wavelength; an electron blocking layer that is disposed on the active layer; a second conductive semiconductor layer that is disposed on the electron blocking layer; a third conductive semiconductor layer that is disposed on the second conductive semiconductor layer; and an electrode that is disposed on the third conductive semiconductor layer, in which the second and third conductive semiconductor layers include an AlGaN semiconductor, and in which the third conductive semiconductor layer has a lower aluminum composition than that of the second conductive semiconductor layer and has an electrical contact resistance with the electrode that is lower than that of the second conductive semiconductor layer.

Abstract: An aspect of the present invention provides a rectal phantom unit and a phantom device including the same, including: a holder having a penetration portion formed in a longitudinal direction thereof; a rectal simulant which is inserted to the penetration portion of the holder, includes a plurality of unit plates laminated thereon, and simulates a rectum of a body; and a film which is disposed between the rectal simulant and the holder and measures an absorbed dose of radiation irradiated to the rectal simulant.

Abstract: The disclosed light emitting device includes an intermediate layer interposed between the light emitting semiconductor structure and the substrate. The light emitting semiconductor structure includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the active layer has a multi quantum well structure including at least one period of a pair structure of a quantum barrier layer including AlxGa(1-x)N (0<x<1) and a quantum well layer including AlyGa(1-y)N (0<x<y<1), and at least one of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer includes AlGaN. The intermediate layer includes AlN and has a plurality of air voids formed in the AlN. At least some of the air voids are irregularly aligned and the number of the air voids is 107 to 1010/cm2.

Abstract: The present invention relates to a head and neck simulation phantom device for simulating the head and neck of a body, the phantom device including: a flat type first plate having a first insertion groove formed on one surface thereof; a flat type second plate disposed to come into contact with the other surface of the first plate and having a second insertion groove formed on the contacted surface with the other surface of the first plate in such a manner as to correspond to the first insertion groove; and a plurality of teeth simulants inserted into the first insertion groove and the second insertion groove and for simulating the teeth of the body.

Abstract: The disclosed light emitting device includes an intermediate layer interposed between the light emitting semiconductor structure and the substrate. The light emitting semiconductor structure includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the active layer has a multi quantum well structure including at least one period of a pair structure of a quantum barrier layer including AlxGa(1-x)N (0<x<1) and a quantum well layer including AlyGa(1-y)N (0<x<y<1), and at least one of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer includes AlGaN. The intermediate layer includes AlN and has a plurality of air voids formed in the AlN. At least some of the air voids are irregularly aligned and the number of the air voids is 107 to 1010/cm2.

Abstract: The disclosed light emitting device includes an intermediate layer interposed between the light emitting semiconductor structure and the substrate. The light emitting semiconductor structure includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the active layer has a multi quantum well structure including at least one period of a pair structure of a quantum barrier layer including AlxGa(1-x)N (0<x<1) and a quantum well layer including AlyGa(1-y)N (0<x<y<1), and at least one of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer includes AlGaN. The intermediate layer includes AlN and has a plurality of air voids formed in the AlN. At least some of the air voids are irregularly aligned and the number of the air voids is 107 to 1010/cm2.

Abstract: Disclosed is a light emitting device package including a package body having at least one cavity, at least one light emitting device mounted on the cavity, and a molding member disposed on the light emitting device to fill the cavity. The package body has at least one first recess formed at an upper portion than a bottom surface of the cavity, and the molding member is disposed to an inner edge of the at least one first recess.

Abstract: Disclosed is a light emitting device including an active layer emitting light with a wavelength band of 200 nm to 405 nm, and a light-transmitting layer disposed on the active layer, the light-transmitting layer having a lower part facing the active layer, wherein at least one of side and upper parts of the light-transmitting layer has a surface-processed pattern portion.

Abstract: Disclosed is a light emitting device including an active layer emitting light with a wavelength band of 200 nm to 405 nm, and a light-transmitting layer disposed on the active layer, the light-transmitting layer having a lower part facing the active layer, wherein at least one of side and upper parts of the light-transmitting layer has a surface-processed pattern portion.

Abstract: The disclosed light emitting device includes an intermediate layer interposed between the light emitting semiconductor structure and the substrate. The light emitting semiconductor structure includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the active layer has a multi quantum well structure including at least one period of a pair structure of a quantum barrier layer including AlxGa(1-x)N (0<x<1) and a quantum well layer including AlyGa(1-y)N(0<x<y<1), and at least one of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer includes AlGaN. The intermediate layer includes AlN and has a plurality of air voids formed in the AlN. At least some of the air voids are irregularly aligned and the number of the air voids is 107 to 1010/cm2.

Abstract: Disclosed is a light emitting device including an active layer emitting light with a wavelength band of 200 nm to 405 nm, and a light-transmitting layer disposed on the active layer, the light-transmitting layer having a lower part facing the active layer, wherein at least one of side and upper parts of the light-transmitting layer has a surface-processed pattern portion.

Abstract: The disclosed light emitting device includes an intermediate layer interposed between the light emitting semiconductor structure and the substrate. The light emitting semiconductor structure includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the active layer has a multi quantum well structure including at least one period of a pair structure of a quantum barrier layer including AlxGa(1-x)N (0<x<1) and a quantum well layer including AlyGa(1-y)N (0<x<y<1), and at least one of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer includes AlGaN. The intermediate layer includes AlN and has a plurality of air voids formed in the AlN. At least some of the air voids are irregularly aligned and the number of the air voids is 107 to 1010/cm2.

Abstract: Disclosed is a light emitting device package including a package body having at least one cavity, at least one light emitting device mounted on the cavity, and a molding member disposed on the light emitting device to fill the cavity. The package body has at least one first recess formed at an upper portion than a bottom surface of the cavity, and the molding member is disposed to an inner edge of the at least one first recess.

Abstract: Disclosed is a light emitting device including an active layer emitting light with a wavelength band of 200 nm to 405 nm, and a light-transmitting layer disposed on the active layer, the light-transmitting layer having a lower part facing the active layer, wherein at least one of side and upper parts of the light-transmitting layer has a surface-processed pattern portion.

Abstract: Disclosed is a liquid crystal display device comprising a lower substrate, an upper substrate, and a liquid crystal layer interposed between the substrates and aligned in a predetermined rubbing direction, in which pixel regions are respectively defined by gate lines and data lines formed to intersect each other on the lower substrate, and a switching device is arranged in an intersecting portion of the gate line and the data line, the liquid crystal display device comprising: a lateral pattern portion formed on at least one side of the data line and formed zigzagging along an extending direction of the data line. With this, it is possible to effectively improve and prevent the rubbing defect that occurs in the stepped region of the data line during the rubbing process for alignment of liquid crystal.

Abstract: The disclosed light emitting device includes an intermediate layer interposed between the light emitting semiconductor structure and the substrate. The light emitting semiconductor structure includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the active layer has a multi quantum well structure including at least one period of a pair structure of a quantum barrier layer including AlxGa(1?x)N (0<x<1) and a quantum well layer including AlyGa(1?y)N (0<x<y<1), and at least one of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer includes AlGaN. The intermediate layer includes AlN and has a plurality of air voids formed in the AlN. At least some of the air voids are irregularly aligned and the number of the air voids is 107 to 1010/cm2.

Abstract: Disclosed is a liquid crystal display device comprising a lower substrate, an upper substrate, and a liquid crystal layer interposed between the substrates and aligned in a predetermined rubbing direction, in which pixel regions are respectively defined by gate lines and data lines formed to intersect each other on the lower substrate, and a switching device is arranged in an intersecting portion of the gate line and the data line, the liquid crystal display device comprising: a lateral pattern portion formed on at least one side of the data line and formed zigzagging along an extending direction of the data line. With this, it is possible to effectively improve and prevent the rubbing defect that occurs in the stepped region of the data line during the rubbing process for alignment of liquid crystal.

Abstract: Provided are a burner and an aftertreating device of exhaust gas, which employs a simple construction using the flame protection tube, thereby increasing stability in forming the flame without the loss of back pressure and also uniformly heating the exhaust gas.