Abstract: This disclosure relates to image sensors and electronic apparatuses including the same. An image sensor including: a pixel area including shared pixels, wherein each of the shared pixels includes at least two photodiodes that form a group and share a floating diffusion (FD) area; and a transistor (TR) area adjacent to the pixel area, wherein the TR area includes transistor sets corresponding to the shared pixels, wherein, when a first shared pixel and a second shared pixel are arranged adjacent to each other in a first direction, a first TR set corresponding to the first shared pixel and a second TR set corresponding to the second shared pixel share a source region of a first selection TR.

Abstract: This disclosure relates to image sensors and electronic apparatuses including the same. An image sensor including: a pixel area including shared pixels, wherein each of the shared pixels includes at least two photodiodes that form a group and share a floating diffusion (FD) area; and a transistor (TR) area adjacent to the pixel area, wherein the TR area includes transistor sets corresponding to the shared pixels, wherein, when a first shared pixel and a second shared pixel are arranged adjacent to each other in a first direction, a first TR set corresponding to the first shared pixel and a second TR set corresponding to the second shared pixel share a source region of a first selection TR.

Abstract: This disclosure relates to image sensors and electronic apparatuses including the same. An image sensor including: a pixel area including shared pixels, wherein each of the shared pixels includes at least two photodiodes that form a group and share a floating diffusion (FD) area; and a transistor (TR) area adjacent to the pixel area, wherein the TR area includes transistor sets corresponding to the shared pixels, wherein, when a first shared pixel and a second shared pixel are arranged adjacent to each other in a first direction, a first TR set corresponding to the first shared pixel and a second TR set corresponding to the second shared pixel share a source region of a first selection TR.

Abstract: An anti-ambipolar transistor in which a turn-on operation is performed at a specific gate voltage and a method of manufacturing the same are disclosed. A vertically stacked structure including a first semiconductor layer and a second semiconductor layer, which are disposed perpendicular to the surface of a substrate, is formed, and then a gate dielectric layer and a gate electrode, which completely surround the side of the vertically stacked structure, are formed. Through the vertical structure, an electric field is generated in a direction parallel to the substrate, and a drain-source current is applied in a direction perpendicular to the surface of the substrate. This ensures the integration of the transistor and efficient operation of the transistor.

Abstract: This disclosure relates to image sensors and electronic apparatuses including the same. An image sensor including: a pixel area including shared pixels, wherein each of the shared pixels includes at least two photodiodes that form a group and share a floating diffusion (FD) area; and a transistor (TR) area adjacent to the pixel area, wherein the TR area includes transistor sets corresponding to the shared pixels, wherein, when a first shared pixel and a second shared pixel are arranged adjacent to each other in a first direction, a first TR set corresponding to the first shared pixel and a second TR set corresponding to the second shared pixel share a source region of a first selection TR.

Abstract: This disclosure relates to image sensors and electronic apparatuses including the same. An image sensor including: a pixel area including shared pixels, wherein each of the shared pixels includes at least two photodiodes that form a group and share a floating diffusion (FD) area; and a transistor (TR) area adjacent to the pixel area, wherein the TR area includes transistor sets corresponding to the shared pixels, wherein, when a first shared pixel and a second shared pixel are arranged adjacent to each other in a first direction, a first TR set corresponding to the first shared pixel and a second TR set corresponding to the second shared pixel share a source region of a first selection TR.

Abstract: This disclosure relates to image sensors and electronic apparatuses including the same. An image sensor including: a pixel area including shared pixels, wherein each of the shared pixels includes at least two photodiodes that form a group and share a floating diffusion (FD) area; and a transistor (TR) area adjacent to the pixel area, wherein the TR area includes transistor sets corresponding to the shared pixels, wherein, when a first shared pixel and a second shared pixel are arranged adjacent to each other in a first direction, a first TR set corresponding to the first shared pixel and a second TR set corresponding to the second shared pixel share a source region of a first selection TR.

Abstract: This disclosure relates to image sensors and electronic apparatuses including the same. An image sensor including: a pixel area including shared pixels, wherein each of the shared pixels includes at least two photodiodes that form a group and share a floating diffusion (FD) area; and a transistor (TR) area adjacent to the pixel area, wherein the TR area includes transistor sets corresponding to the shared pixels, wherein, when a first shared pixel and a second shared pixel are arranged adjacent to each other in a first direction, a first TR set corresponding to the first shared pixel and a second TR set corresponding to the second shared pixel share a source region of a first selection TR.

Abstract: This disclosure relates to image sensors and electronic apparatuses including the same. An image sensor including: a pixel area including shared pixels, wherein each of the shared pixels includes at least two photodiodes that form a group and share a floating diffusion (FD) area; and a transistor (TR) area adjacent to the pixel area, wherein the TR area includes transistor sets corresponding to the shared pixels, wherein, when a first shared pixel and a second shared pixel are arranged adjacent to each other in a first direction, a first TR set corresponding to the first shared pixel and a second TR set corresponding to the second shared pixel share a source region of a first selection TR.

Abstract: This disclosure relates to image sensors and electronic apparatuses including the same. An image sensor including: a pixel area including shared pixels, wherein each of the shared pixels includes at least two photodiodes that form a group and share a floating diffusion (FD) area; and a transistor (TR) area adjacent to the pixel area, wherein the TR area includes transistor sets corresponding to the shared pixels, wherein, when a first shared pixel and a second shared pixel are arranged adjacent to each other in a first direction, a first TR set corresponding to the first shared pixel and a second TR set corresponding to the second shared pixel share a source region of a first selection TR.

Abstract: This disclosure relates to image sensors and electronic apparatuses including the same. An image sensor including: a pixel area including shared pixels, wherein each of the shared pixels includes at least two photodiodes that form a group and share a floating diffusion (FD) area; and a transistor (TR) area adjacent to the pixel area, wherein the TR area includes transistor sets corresponding to the shared pixels, wherein, when a first shared pixel and a second shared pixel are arranged adjacent to each other in a first direction, a first TR set corresponding to the first shared pixel and a second TR set corresponding to the second shared pixel share a source region of a first selection TR.

Abstract: The present invention relates to a technique for outputting threshold voltages by properly changing the threshold voltages such that the threshold voltages can protect low-voltage driving elements within an analog to digital converter when the threshold voltages of an OLED display panel are sensed and outputted to the analog to digital converter. The present invention comprises: a sampling capacitor which samples threshold voltages sensed and inputted from an organic light-emitting diode on a display panel; a charge-sharing capacitor which charges and shares the threshold voltages sampled from the sampling capacitor, or solely charges the threshold voltages to bypass the threshold voltages; and a sample-and-hold unit which has a plurality of switches for performing switching operations for the sampling operation of the sampling capacitor and the charging and the sharing of the charge-sharing capacitor, and scales the threshold voltages to threshold voltage areas having a certain value or less.

Abstract: Provided are antibodies specifically binding to the HBV surface antigen (HBsAg) which are effective for the prevention or treatment of hepatitis B.

Abstract: Disclosed is a liquid crystal panel driving circuit of display stabilization, including: a plurality of output buffers buffering data voltage and supplying or cutting off the buffered data voltage to or from each of the plurality of data lines; an output MUX switch receiving outputs from two adjacent output buffers of the plurality of output buffers and transferring one of the two outputs to the plurality of data lines; a garbage switch connecting each of the plurality of data lines to a ground terminal; and a power on sensor or a power off sensor generating a power on or off reset signal in response to a turn on/off of a power supply voltage, wherein the output MUX switch is turned-off and the charge share switch and the garbage switch are turned-on, in response to the power on reset signal or the power off reset signal.

Abstract: The present invention relates to a technique for outputting threshold voltages by properly changing the threshold voltages such that the threshold voltages can protect low-voltage driving elements within an analog to digital converter when the threshold voltages of an OLED display panel are sensed and outputted to the analog to digital converter. The present invention comprises: a sampling capacitor which samples threshold voltages sensed and inputted from an organic light-emitting diode on a display panel; a charge-sharing capacitor which charges and shares the threshold voltages sampled from the sampling capacitor, or solely charges the threshold voltages to bypass the threshold voltages; and a sample-and-hold unit which has a plurality of switches for performing switching operations for the sampling operation of the sampling capacitor and the charging and the sharing of the charge-sharing capacitor, and scales the threshold voltages to threshold voltage areas having a certain value or less.

Abstract: Provided are antibodies specifically binding to the HBV surface antigen (HBsAg) which are effective for the prevention or treatment of hepatitis B.

Abstract: Provided are antibodies specifically binding to the HBV surface antigen (HBsAg) which are effective for the prevention or treatment of hepatitis B.

Abstract: Provided are antibodies specifically binding to the epidermal growth factor receptor (EGFR) which are effective for the treatment of EGFR-mediated cancers.

Abstract: Disclosed is a liquid crystal panel driving circuit of display stabilization, including: a plurality of output buffers buffering data voltage and supplying or cutting off the buffered data voltage to or from each of the plurality of data lines; an output MUX switch receiving outputs from two adjacent output buffers of the plurality of output buffers and transferring one of the two outputs to the plurality of data lines; a garbage switch connecting each of the plurality of data lines to a ground terminal; and a power on sensor or a power off sensor generating a power on or off reset signal in response to a turn on/off of a power supply voltage, wherein the output MUX switch is turned-off and the charge share switch and the garbage switch are turned-on, in response to the power on reset signal or the power off reset signal.

Abstract: Provided are antibodies specifically binding to the HBV surface antigen (HBsAg) which are effective for the prevention or treatment of hepatitis B.