Abstract: The present disclosure relates to variants of etanercept and related processes. The variants are specific truncation variants of etanercept. Also provided herein are a pharmaceutical formulation comprising the variants. Additionally, provided herein is a method for decreasing the variants. The method can effectively optimize the amount of the truncation variants, with simplicity in process and ease in operation.

Abstract: Magnetoelectric magnetic tunnel junction (MEMTJ) logic devices comprise a magnetoelectric switching capacitor coupled to a pair of magnetic tunnel junctions (MTJs) by a conductive layer. The logic state of the MEMTJ is represented by the magnetization orientation of the ferromagnetic layer of the magnetoelectric capacitor, which can be switched through the application of an appropriate input voltage to the MEMTJ. The magnetization orientation of the magnetoelectric capacitor ferromagnetic layer is read out by the MTJs. The conductive layer is positioned between the capacitor and the MTJs. The MTJ ferromagnetic free layers are exchange coupled to the ferromagnetic layer of the magnetoelectric capacitor. The potential of an MTJ free layer is based on a supply voltage applied to the reference layer of the MTJ. The MTJ reference layers have a magnetization orientation that is parallel or antiparallel to the magnetization orientations of the ferromagnetic layer of the magnetoelectric capacitor.

Abstract: Technologies for a transistor with a ferroelectric gate dielectric are disclosed. In the illustrative embodiment, a transistor has a ferroelectric gate dielectric that is lattice matched to the channel of the transistor. In one embodiment, the ferroelectric polarization changes when voltage is applied and removed from a gate electrode, facilitating switching of the transistor at a lower applied voltage. In another embodiment, the ferroelectric polarization of a gate dielectric of a transistor changes when the voltage is past a positive threshold value or a negative threshold value. Such a transistor can be used as a one transistor memory cell.

Abstract: A method for constructing transient electromagnetic inversion model construction method driven by a target dataset is provided, including: constructing an initial training set, and training a first convolutional neural network using the initial training set to obtain an initial transient electromagnetic inversion network model; inputting electromagnetic response data to be measured into the initial transient electromagnetic inversion network model for prediction to obtain resistivity values; performing forward simulation on resistivity values to obtain forward-simulated electromagnetic response data, and constructing prediction data based on forward-simulated electromagnetic response data and resistivity values; extracting similar data to test electromagnetic response data from the initial training set, and constructing a target dataset based on similar data and prediction data; migrating parameters from the initial transient electromagnetic inversion network model to a second convolutional neural network to

Abstract: Technologies for a transistor with a ferroelectric gate dielectric are disclosed. In the illustrative embodiment, a transistor has a ferroelectric gate dielectric that is lattice matched to the channel of the transistor. In one embodiment, the ferroelectric polarization changes when voltage is applied and removed from a gate electrode, facilitating switching of the transistor at a lower applied voltage. In another embodiment, the ferroelectric polarization of a gate dielectric of a transistor changes when the voltage is past a positive threshold value or a negative threshold value. Such a transistor can be used as a one transistor memory cell.

Abstract: Technologies for majority gates are disclosed. In one embodiment, a ferroelectric layer has three inputs and an output adjacent a surface of the ferroelectric. When a voltage is applied to each input, the inputs and a ground plane below the ferroelectric layer form a capacitor. The ferroelectric layer becomes polarized based on the applied voltages at the inputs. The portion of the ferroelectric layer near the output becomes polarized in the direction of polarization of the majority of the inputs. The output voltage then reflects the majority voltage of the inputs.

Abstract: This application provides an always on display control method, an electronic device, and a storage medium, and relates to the field of display technologies. When a screen-off trigger condition is met, a display driver receives a backlight instruction and a power-off instruction, the display driver controls, in response to the backlight instruction, to turn off backlight of a display screen, and the display driver intercepts the power-off instruction, and does not control the display screen to power off. In this case, an IC chip of the display screen is not triggered to power off. Then, when the display driver receives an AOD display instruction, because the IC chip of the display screen is in a power-on state, it is unnecessary to trigger the IC chip of the display screen to power on. Therefore, the display driver can more quickly trigger the display screen to display an always on pattern.

Abstract: The disclosure solves a problem of a poor ability in controlling and defending against a data error risk of a vehicle driving assistance system during data communication. The data processing method includes: creating a verification data chain for verifying vehicle-carried data of a target vehicle, where the verification data chain includes a plurality of check bits; and handling a communication error when the communication error is detected in the vehicle-carried data of the target vehicle based on the verification data chain. In the present application, when a data transmission process is subjected to interference or malicious attacks, it is possible to detect a communication error in communication data by the check bits and record the communication error, thereby achieving a purpose of controlling and defensing against data error risks.

Abstract: An obtaining method of the tempering temperature range includes following operations: determining a determination criterion of a tempering weld bead effect of a steel obtained after a welding of; determining an Ac1 temperature at which the steel begins to form or transform into austenite during a welding heating process; obtaining a temperature field distribution during a welding process, and determining a thermal cycle curve and a size distribution of the temperature field in different temperature ranges; using different peak tempering temperatures to simulate the thermal cycle curve and test performances on a microstructure of a weld coarse grained region, and determining a lowest peak temperature Tw and a highest peak temperature Tp meeting the determination criterion; and obtaining the tempering temperature range ?Tw according to the highest peak temperature Tp and the lowest peak temperature Tw of the steel, wherein Tp=Ac1 for some steel.

Abstract: A spin orbit logic (SOL) device includes a first electrically conductive layer; a layer comprising a ferroelectric material (FE layer) on the first electrically conductive layer; a second electrically conductive layer on the FE layer; and a spin orbit coupling (SOC) stack including a first layer (SOC1 layer) including a first SOC material, and a second layer (SOC2 layer) including a second SOC material, the SOC1 layer adjacent the FE layer.

Abstract: Disclosed are an automotive Ethernet circuit board and communications system, and a vehicle. The automotive Ethernet circuit board includes: a component placement layer, configured to carry a PHY chip and a control chip of the PHY chip; a plurality of signal wiring layers, configured to carry signal wiring between components in the component placement layer; and a signal shielding layer, located between the plurality of signal wiring layers and configured to prevent interference of a clock signal in the signal wiring. In the embodiments of the present application, a plurality of signal wiring layers are used for signal wiring between components, and a plurality of complete signal shielding layers are used to prevent interference of a clock signal in the wiring. The embodiments help reduce signal crosstalk between PCBs, prevent interference of a clock signal in signal wiring, and improve stability and consistency of a data communications system.

Abstract: A spin orbit logic device includes: a first electrically conductive layer; a layer including a magnetoelectric material (ME layer) on the first electrically conductive layer; a layer including a ferromagnetic material with in-plane magnetic anisotropy (FM layer) on the ME layer; a second electrically conductive layer on the FM layer; a layer including a dielectric material on the second electrically conductive layer (coupling layer); a layer including a spin orbit coupling material (SOC layer) on the coupling layer; and a layer including a ferromagnetic material with perpendicular magnetic anisotropy (PMA layer) on the SOC layer.

Abstract: Magnetoelectric spin-orbit (MESO) devices, integrated circuit devices and systems with MESO devices, and methods of forming the same, are disclosed herein. In one embodiment, a semiconductor device includes: a first layer including a conductive material; a second layer over the first layer, where the second layer includes a magnetoelectric material; one or more third layers over the second layer, where the third layer(s) include one or more ferromagnetic materials; a fourth layer over the third layer(s), where the fourth layer includes a superlattice with a heavy metal and a dielectric material; and a fifth layer over the fourth layer, where the fifth layer includes a material having low spin-orbit coupling.

Abstract: Multi-layer magnetoelectric, ferroelectric, and ferromagnetic structures comprising one or more soft layers and one or more hard layers have a lower coercive voltage than magnetoelectric, ferroelectric, and ferromagnetic structures comprising a single layer. The lower coercive voltage of the overall multi-layer structure is due to exchange coupling between the soft and hard layers. The soft layer has a coercive voltage that is lower than the coercive voltage of the hard layer and magnetic exchange coupling between the soft and hard layers during switching makes it easier for the hard layer to switch polarization or magnetization states. The multi-layer magnetoelectric, ferroelectric, and ferromagnetic structures can be used in a variety of spintronic devices, such as capacitors, magnetoelectric spin-orbit (MESO) devices, magnetoelectric magnetic tunneling junctions (MEMTJs), and ferroelectric field effect transistors (FeFETs).

Abstract: Magnetoelectric spin-orbit (MESO) devices, integrated circuit devices and systems with MESO devices, and methods of forming the same, are disclosed herein. In one embodiment, a semiconductor device includes: a first layer that includes a conductive material; a second layer over the first layer, where the second layer includes a magnetoelectric material; one or more third layers over the second layer, where the third layer(s) include one or more ferromagnetic materials; and a fourth layer over the third layer(s), wherein the fourth layer includes platinum, cobalt, and oxygen.

Abstract: Technologies for planar three-input ferroelectric majority gates are disclosed. In one embodiment, a ferroelectric layer has asymmetric input electrodes and an output electrode located on a surface of the ferroelectric layer. When a voltage is applied to each input, the inputs and a ground plane below the ferroelectric layer form a capacitor. The ferroelectric layer becomes polarized based on the applied voltages at the inputs. The portion of the ferroelectric layer at the output electrode becomes polarized in the direction of polarization of the majority of the inputs. The output voltage then reflects the majority voltage of the inputs. Symmetric input electrodes are utilized in other ferroelectric majority gate embodiments.

Abstract: In one embodiment, an integrated circuit die includes: a first layer comprising a magnetoelectric material; a second layer comprising a monolayer transition metal dichalcogenide (TMD); a magnet between the first layer and the second layer, wherein the magnet has perpendicular magnetic anisotropy; a first conductive trace coupled to the first layer; and a second conductive trace coupled to the magnet.

Abstract: A pbit device, in one embodiment, includes a first field-effect transistor (FET) that includes a source region, a drain region, a source electrode on the source region, a drain electrode on the drain region, a channel region between the source and drain regions, a dielectric layer on a surface over the channel region, an electrode layer above the dielectric layer, and a ferroelectric (FE) material layer between the dielectric layer and the electrode layer. The pbit device also includes a second FET comprising a source electrode, a drain electrode, and a gate electrode. The drain electrode of the second FET is connected to the drain electrode of the first FET.

Abstract: A driver assistance system according to the present disclosure includes: a plurality of devices configured to transmit data or signals; and a chip system including a security processor. The security processor is configured to run a firewall program to build a firewall module embedded into the chip system. The firewall module intercepts the data or signals transmitted by the devices according to a predetermined rule. A firewall of the driver assistance system is embedded into a chip and is a chip-level firewall. The firewall embedded into the chip can be directly integrated with hardware of the driver assistance system to provide more stable and reliable security protection.