Abstract: A knitted fabric includes a first face and a second face which are oppositely arranged. At the edge joint between the first face and the second face, a first yarn joint is formed through the connection between the first loop of the nth first loop row and the first loop of the (n+1)th first loop row, and a second yarn joint is formed through the connection between the second loop of the nth second loop row and the second loop of the (n+1)th second loop row. The first yarn joint and the second yarn joint interlock with each other to form an interlocked part to connect the first face and the second face. Since the first and second sides are knitted independently, the needle guide carriage corresponding to the first side and the second side will always cooperate with the corresponding yarn feeder during reciprocating movement with no idle motions.

Abstract: Disclosed herein are powdered compositions comprised of fibrinogen, thrombin, glycerol-water solution, and optionally oxidized cellulose (OC), wherein the glycerol is present at a concentration ranging from about 0.7% to about 6%, by weight; and wherein the OC is present at a concentration below about 9%, by weight, or is absent. Methods of making the compositions, and uses of the compositions in methods for treating a bleeding tissue, and for sealing leaks in tissues are further disclosed.

Abstract: A self-supervised inversion method based on deep learning for the transient electromagnetic data is provided, including: inputting electromagnetic response data into a pre-trained inversion network for inversion to obtain inverted resistivity values; inputting the inverted resistivity values into a pre-trained forward network for forward calculation to obtain forward electromagnetic response data; updating parameters of the inversion network by minimizing the loss between the output forward electromagnetic response data and the input electromagnetic response data to be inverted; re-inverting the electromagnetic response data to be inverted using the inversion network with updated parameters until a preset number of iterations is reached, and finally outputting the inverted resistivity values.

Abstract: The communication apparatus includes a first circuit board and a second circuit board. The first circuit board includes N1 service ports, M1 intermediate frequency ports, a first processing unit, and a first switching unit. The second circuit board includes N2 service ports, M2 intermediate frequency ports, a second processing unit, and a second switching unit. The M1 intermediate frequency ports or the M2 intermediate frequency ports are configured to connect to a second communication apparatus. In this way, the first circuit board and the second circuit board can be interchangeable active/standby circuit boards, so that active/standby protection can be implemented, and reliability of product application can be improved.

Abstract: This application discloses a microwave communication system that includes a first apparatus comprising a plurality of antennas and a second apparatus comprising a plurality of antennas. The first apparatus is configured to send carrier signals of at least two frequencies through at least two antennas of its plurality of antennas, and each of the at least two antennas corresponds to a carrier signal of at least one frequency. The second apparatus is configured to receive the carrier signals of the at least two frequencies through at least two antennas of its plurality of antennas, and each of the at least two antennas receives the carrier signals of the at least two frequencies. In this solution, a transmit end does not need to send all carrier signals through one antenna. Therefore, power back-off is not required, or the carrier signals can be sent with a small amount of power back-off.

Abstract: In embodiments of the present disclosure, logic devices include magnetically coupled and electrically isolated perpendicular magnetic anisotropy (PMA) ferromagnet (FM) material layers. The logic devices may be read based on the anomalous Hall effect (AHE).

Abstract: In embodiments of the present disclosure, logic devices include a magnetoelectric (ME) material layer, an in-plane magnetic anisotropy (IMA) ferromagnetic (FM) material layer on the ME material layer, a dielectric layer on the IMA FM material layer, a metal layer on the dielectric layer, and a perpendicular magnetic anisotropy (PMA) FM material layer on the metal layer. The logic devices may be read based on the anomalous Hall effect (AHE) based on exchange coupling between the FM material layers.

Abstract: The present disclosure relates to variants of etanercept and related processes. The variants are specific truncation variants of etanercept. Also provided herein are a pharmaceutical formulation comprising the variants. Additionally, provided herein is a method for decreasing the variants. The method can effectively optimize the amount of the truncation variants, with simplicity in process and ease in operation.

Abstract: Magnetoelectric magnetic tunnel junction (MEMTJ) logic devices comprise a magnetoelectric switching capacitor coupled to a pair of magnetic tunnel junctions (MTJs) by a conductive layer. The logic state of the MEMTJ is represented by the magnetization orientation of the ferromagnetic layer of the magnetoelectric capacitor, which can be switched through the application of an appropriate input voltage to the MEMTJ. The magnetization orientation of the magnetoelectric capacitor ferromagnetic layer is read out by the MTJs. The conductive layer is positioned between the capacitor and the MTJs. The MTJ ferromagnetic free layers are exchange coupled to the ferromagnetic layer of the magnetoelectric capacitor. The potential of an MTJ free layer is based on a supply voltage applied to the reference layer of the MTJ. The MTJ reference layers have a magnetization orientation that is parallel or antiparallel to the magnetization orientations of the ferromagnetic layer of the magnetoelectric capacitor.

Abstract: Technologies for a transistor with a ferroelectric gate dielectric are disclosed. In the illustrative embodiment, a transistor has a ferroelectric gate dielectric that is lattice matched to the channel of the transistor. In one embodiment, the ferroelectric polarization changes when voltage is applied and removed from a gate electrode, facilitating switching of the transistor at a lower applied voltage. In another embodiment, the ferroelectric polarization of a gate dielectric of a transistor changes when the voltage is past a positive threshold value or a negative threshold value. Such a transistor can be used as a one transistor memory cell.

Abstract: A method for constructing transient electromagnetic inversion model construction method driven by a target dataset is provided, including: constructing an initial training set, and training a first convolutional neural network using the initial training set to obtain an initial transient electromagnetic inversion network model; inputting electromagnetic response data to be measured into the initial transient electromagnetic inversion network model for prediction to obtain resistivity values; performing forward simulation on resistivity values to obtain forward-simulated electromagnetic response data, and constructing prediction data based on forward-simulated electromagnetic response data and resistivity values; extracting similar data to test electromagnetic response data from the initial training set, and constructing a target dataset based on similar data and prediction data; migrating parameters from the initial transient electromagnetic inversion network model to a second convolutional neural network to

Abstract: Technologies for a transistor with a ferroelectric gate dielectric are disclosed. In the illustrative embodiment, a transistor has a ferroelectric gate dielectric that is lattice matched to the channel of the transistor. In one embodiment, the ferroelectric polarization changes when voltage is applied and removed from a gate electrode, facilitating switching of the transistor at a lower applied voltage. In another embodiment, the ferroelectric polarization of a gate dielectric of a transistor changes when the voltage is past a positive threshold value or a negative threshold value. Such a transistor can be used as a one transistor memory cell.

Abstract: Technologies for majority gates are disclosed. In one embodiment, a ferroelectric layer has three inputs and an output adjacent a surface of the ferroelectric. When a voltage is applied to each input, the inputs and a ground plane below the ferroelectric layer form a capacitor. The ferroelectric layer becomes polarized based on the applied voltages at the inputs. The portion of the ferroelectric layer near the output becomes polarized in the direction of polarization of the majority of the inputs. The output voltage then reflects the majority voltage of the inputs.

Abstract: This application provides an always on display control method, an electronic device, and a storage medium, and relates to the field of display technologies. When a screen-off trigger condition is met, a display driver receives a backlight instruction and a power-off instruction, the display driver controls, in response to the backlight instruction, to turn off backlight of a display screen, and the display driver intercepts the power-off instruction, and does not control the display screen to power off. In this case, an IC chip of the display screen is not triggered to power off. Then, when the display driver receives an AOD display instruction, because the IC chip of the display screen is in a power-on state, it is unnecessary to trigger the IC chip of the display screen to power on. Therefore, the display driver can more quickly trigger the display screen to display an always on pattern.

Abstract: The disclosure solves a problem of a poor ability in controlling and defending against a data error risk of a vehicle driving assistance system during data communication. The data processing method includes: creating a verification data chain for verifying vehicle-carried data of a target vehicle, where the verification data chain includes a plurality of check bits; and handling a communication error when the communication error is detected in the vehicle-carried data of the target vehicle based on the verification data chain. In the present application, when a data transmission process is subjected to interference or malicious attacks, it is possible to detect a communication error in communication data by the check bits and record the communication error, thereby achieving a purpose of controlling and defensing against data error risks.

Abstract: An obtaining method of the tempering temperature range includes following operations: determining a determination criterion of a tempering weld bead effect of a steel obtained after a welding of; determining an Ac1 temperature at which the steel begins to form or transform into austenite during a welding heating process; obtaining a temperature field distribution during a welding process, and determining a thermal cycle curve and a size distribution of the temperature field in different temperature ranges; using different peak tempering temperatures to simulate the thermal cycle curve and test performances on a microstructure of a weld coarse grained region, and determining a lowest peak temperature Tw and a highest peak temperature Tp meeting the determination criterion; and obtaining the tempering temperature range ?Tw according to the highest peak temperature Tp and the lowest peak temperature Tw of the steel, wherein Tp=Ac1 for some steel.

Abstract: Disclosed are an automotive Ethernet circuit board and communications system, and a vehicle. The automotive Ethernet circuit board includes: a component placement layer, configured to carry a PHY chip and a control chip of the PHY chip; a plurality of signal wiring layers, configured to carry signal wiring between components in the component placement layer; and a signal shielding layer, located between the plurality of signal wiring layers and configured to prevent interference of a clock signal in the signal wiring. In the embodiments of the present application, a plurality of signal wiring layers are used for signal wiring between components, and a plurality of complete signal shielding layers are used to prevent interference of a clock signal in the wiring. The embodiments help reduce signal crosstalk between PCBs, prevent interference of a clock signal in signal wiring, and improve stability and consistency of a data communications system.

Abstract: A spin orbit logic (SOL) device includes a first electrically conductive layer; a layer comprising a ferroelectric material (FE layer) on the first electrically conductive layer; a second electrically conductive layer on the FE layer; and a spin orbit coupling (SOC) stack including a first layer (SOC1 layer) including a first SOC material, and a second layer (SOC2 layer) including a second SOC material, the SOC1 layer adjacent the FE layer.

Abstract: A spin orbit logic device includes: a first electrically conductive layer; a layer including a magnetoelectric material (ME layer) on the first electrically conductive layer; a layer including a ferromagnetic material with in-plane magnetic anisotropy (FM layer) on the ME layer; a second electrically conductive layer on the FM layer; a layer including a dielectric material on the second electrically conductive layer (coupling layer); a layer including a spin orbit coupling material (SOC layer) on the coupling layer; and a layer including a ferromagnetic material with perpendicular magnetic anisotropy (PMA layer) on the SOC layer.