Abstract: The present invention provides a high strength, high toughness, heat-cracking resistant bainite steel wheel for rail transportation and a manufacturing method thereof. Components are: carbon 0.10-0.40%, silicon 1.00-2.00%, manganese 1.00-2.50%, copper 0.20-1.00%, boron 0.0001-0.035%, nickel 0.10-1.00%, phosphorus?0.020%, and sulphur?0.020%, where the remaining is iron and unavoidable residual elements, 1.50%?Si+Ni?3.00%, and 1.50%?Mn+Ni+Cu?3.00%. Compared with the prior art, in the present invention, by using design of the chemical compositions of steel and wheel manufacturing processes, especially a heat treatment process and technology, a rim of the wheel obtains a carbide-free bainite structure, and a web and a wheel hub obtain a metallographic structure based on granular bainite and a supersaturated ferritic structure.

Abstract: A semiconductor apparatus and its manufacturing method are presented. The method entails providing a substrate structure comprising a substrate, one or more fins positioned along a first direction on the substrate, and a separation region surrounding the fins. The separation region comprises a first separation region neighboring a first side of the fins and a second separation region neighboring a second side of the fins; forming a first and a second insulation layers on the substrate structure; forming a barrier layer; performing a first etching process using the barrier layer as a mask; removing the barrier layer; performing a second etching process using the remaining second insulation layer as a mask; forming a third insulation layer on side surfaces of the remaining first and second insulation layers; and performing a third etching process using the remaining second insulation layer and the third insulation layer as a mask.

Abstract: The present disclosure relates to the technical field of semiconductor processes, and discloses a semiconductor device and a manufacturing method therefor.

Abstract: The present invention discloses a low cost lean production bainitic steel wheel for rail transit and a manufacturing method therefor. The steel wheel contains elements with the following weight percentages: carbon C: 0.15-0.45%, silicon Si: 1.00-2.50%, manganese Mn: 1.20-3.00%, rare earth RE: 0.001-0.040%, phosphorus P?0.020%, and sulphur S?0.020%, where the remaining is iron and unavoidable residual elements, and 3.00%?Si+Mn?5.00%. Compared with the prior art, through alloying design and a preparation process, especially a heat treatment process and technology, a rim of the wheel obtains a carbide-free bainite structure, and a web and a wheel hub obtain granular bainite, a supersaturated ferritic structure, and a small amount of pearlite. The wheel has high comprehensive mechanical properties and service performance.

Abstract: The disclosed computer-implemented method for preventing unauthorized access to computing devices implementing computer accessibility services may include (i) detecting, at a client computing device, an instruction to perform a user interface action utilizing a computer accessibility service, (ii) determining, at the client computing device, whether the instruction was triggered based on a touch event initiated by a user of the client computing device, and (iii) performing, at the client computing device, a security action in response to determining that the instruction was not triggered based on a touch event initiated by the user. Various other methods, systems, and computer-readable media are also disclosed.

Abstract: A semiconductor apparatus and its manufacturing method are presented. The method entails providing a substrate structure comprising a substrate, one or more fins positioned along a first direction on the substrate, and a separation region surrounding the fins. The separation region comprises a first separation region neighboring a first side of the fins and a second separation region neighboring a second side of the fins; forming a first and a second insulation layers on the substrate structure; forming a barrier layer; performing a first etching process using the barrier layer as a mask; removing the barrier layer; performing a second etching process using the remaining second insulation layer as a mask; forming a third insulation layer on side surfaces of the remaining first and second insulation layers; and performing a third etching process using the remaining second insulation layer and the third insulation layer as a mask.

Abstract: A method for controlling transmission rate and a wireless local area network (WLAN) device are provided. The method for controlling transmission rate includes the following steps. Calculate a bandwidth requirement of the WLAN device according to a network application service provided by the WLAN device in an application layer. Determine a WLAN data transmission rate of the WLAN device in a physical layer according to the bandwidth requirement.

Abstract: The present disclosure relates to the technical field of semiconductor processes, and discloses a semiconductor device and a manufacturing method therefor. The semiconductor device includes a substrate; two fins located on the substrate and extending along a first direction; an isolation material layer surrounding the fins, comprising a first isolation regions located at an end region between the two fins along the first direction, and a second isolation region located at sides of the fins along a second direction that is different from the first direction, wherein an upper surface of the first isolation region substantially align with an upper surfaces of the fins, and an upper surface of the second isolation region is lower than the upper surface of the fins; and a first insulating layer on the first isolation region.

Abstract: The present disclosure relates to the field of semiconductor technologies, and discloses semiconductor apparatus and manufacturing methods for the same.

Abstract: The present disclosure provides an antenna and an electronic device. The antenna includes: a radiator, a feed terminal, a capacitive circuit, a resonant circuit, and a ground terminal. The feed terminal is electrically connected to a preset connection point on the radiator via the capacitive circuit. A first end of the resonant circuit is electrically connected to the radiator, and a second end of the resonant circuit is electrically connected to the ground terminal.

Abstract: A semiconductor apparatus and its manufacturing method are presented. The method entails providing a substrate structure comprising a substrate, one or more fins positioned along a first direction on the substrate, and a separation region surrounding the fins. The separation region comprises a first separation region neighboring a first side of the fins and a second separation region neighboring a second side of the fins; forming a first and a second insulation layers on the substrate structure; forming a barrier layer; performing a first etching process using the barrier layer as a mask; removing the barrier layer; performing a second etching process using the remaining second insulation layer as a mask; forming a third insulation layer on side surfaces of the remaining first and second insulation layers; and performing a third etching process using the remaining second insulation layer and the third insulation layer as a mask.

Abstract: The present disclosure relates to the technical field of semiconductor processes, and discloses a semiconductor device and a manufacturing method therefor.

Abstract: A vertical spring support device for a coupler, comprises a support platform, a bracket, a support rod, a support spring, a wear sleeve and a locknut; the support spring is sheathed on the support rod, and an upper end of the support spring is resisted against a lower surface of the support platform while a lower end of the support spring is resisted against an upper end face of the bracket; an upper end of the support rod is fixedly connected to the lower surface of the support platform, while a bottom end of the support rod passes through the bracket and is then in threaded connection to the locknut via the wear sleeve; the support platform comprises a vertical support platform plate and a horizontal support platform plate, and a lower surface of the horizontal support platform plate is fixedly connected to the upper end of the support rod; and, the vertical support platform plate is vertically fixed on one side of the horizontal support platform plate close to the buffer shell.

Abstract: A vertical spring support device for a coupler, comprises a support platform, a bracket, a support rod, a support spring, a wear sleeve and a locknut; the support spring is sheathed on the support rod, and an upper end of the support spring is resisted against a lower surface of the support platform while a lower end of the support spring is resisted against an upper end face of the bracket; an upper end of the support rod is fixedly connected to the lower surface of the support platform, while a bottom end of the support rod passes through the bracket and is then in threaded connection to the locknut via the wear sleeve; the support platform comprises a vertical support platform plate and a horizontal support platform plate, and a lower surface of the horizontal support platform plate is fixedly connected to the upper end of the support rod; and, the vertical support platform plate is vertically fixed on one side of the horizontal support platform plate close to the buffer shell

Abstract: A video encoding device is provided. The video encoding device includes an encoding unit, a transmission unit, and a calculating unit. The encoding unit generates an encoded video with an encoding frame rate. The transmission unit provides a video stream to a client terminal via network according to the encoded video. The calculating unit calculates an encoding rate in a first detection period according to the encoded video, and calculates a transmission rate in a second detection period according to the video stream. The encoding unit adjusts the encoding frame rate according to the encoding rate and the transmission rate.

Abstract: An image processing method and an image processing system are provided. The image processing method includes the following steps: An image data is cropped to obtain a plurality of regions. A plurality of image detections are performed on the regions.

Abstract: A video processing method and a video processing system for processing an original video are provided. The original video includes a plurality of original frames. The video processing method includes the following steps: A dynamic object is detected in the original video and a plurality of interesting regions in some of the original frames is obtained according to the dynamic object. Some of the original frames are cropped to obtain a plurality of cropped sub-frames according to the interesting regions. Each of the cropped sub-frames is resized to obtain a plurality of resized sub-frames whose resolutions are identical. The resized sub-frames are compressed to be an interesting video.

Abstract: A method for controlling transmission rate and a wireless local area network (WLAN) device are provided. The method for controlling transmission rate includes the following steps. Calculate a bandwidth requirement of the WLAN device according to a network application service provided by the WLAN device in an application layer. Determine a WLAN data transmission rate of the WLAN device in a physical layer according to the bandwidth requirement.

Abstract: A method of fabricating a semiconductor device includes: providing a semiconductor substrate including a hard mask layer; performing, using the hard mask layer, etching to the semiconductor substrate to form a fin-type structure and a groove; forming an isolation material layer in the regions between adjacent fins of the fin-type structure and in the groove; removing a portion of the isolation material layer that is located above the hard mask layer to form a shallow trench isolation; and forming a second mask layer over the hard mask layer, the second mask layer having an opening above the shallow trench isolation; performing ion implantation to the shallow trench isolation through the opening; removing the second mask layer and the hard mask layer; and removing a portion of the isolation material layer located in the regions between adjacent fins of the fin-type structure and a portion of the shallow trench isolation.

Abstract: A message notification method and an electronic device are provided. The message notification method includes: receiving a message by an electronic device; detecting whether a screen of the electronic device is in an unobservable state when the message is received, the unobservable state indicating that the screen of the electronic device is downward or covered; and controlling a message notification assembly configured at a non-screen side of the electronic device to generate a visual prompt if the screen of the electronic device is in the unobservable state. Thus, the user can be notified to read or answer the received messages even if the electronic device is in the silent mode and the screen is in the unobservable state.