Abstract: The present disclosure discloses a rapid frequency searching method and apparatus for a data processing device, and a data processing device.

Abstract: The present disclosure discloses a rapid frequency searching method and apparatus for a data processing device, and a data processing device.

Abstract: The present disclosure relates to a method for up-converting a clock signal, a clock circuit and a digital processing device. More specifically, provided is a method for up-converting a clock signal, comprising: employing a first clock sub-circuit to provide a clock signal having a first frequency to a chip; receiving an instruction to up-convert the clock signal having the first frequency to a clock signal having a second frequency; in response to receiving the instruction, causing a second clock sub-circuit to output the clock signal having the second frequency; and after the second clock sub-circuit outputs the clock signal having the second frequency, employing the second clock sub-circuit to provide the clock signal having the second frequency to the chip in place of the first clock sub-circuit.

Abstract: Methods for fabricating a semiconductor structure are disclosed. According to some aspects, a first layer is formed on a substrate, and an etch operation is performed to form an opening extending vertically through the first layer. A thermal treatment is performed on the substrate to remove a residual that residues in the opening when forming the opening. At least an oxygen gas is provided in the thermal treatment to react with the residual at a treatment temperature between 800° C. and 1,300° C.

Abstract: Disclosed is a mining machine power adjusting method, including: when a mining machine is in a working stage, collecting an input voltage of the mining machine; adjusting a maximum working power of the mining machine to a first power value by controlling a working frequency and an output voltage of the mining machine when the input voltage is lower than a pre-determined voltage threshold; and adjusting the maximum working power to a second power value by controlling the working frequency and the output voltage of the mining machine when the input voltage is higher than or equal to the voltage threshold, where the first power value is the product of the input voltage multiplied by a rated current of the mining machine, and the second power value is the product of the voltage threshold multiplied by the rated current.

Abstract: 3D memory devices with an etch-resistant layer and methods for forming the same are disclosed. A memory device includes a substrate and a memory stack disposed on the substrate. The memory stack includes a plurality of interleaved conductor layers and dielectric layers. The memory device also includes a plurality of memory strings each extending vertically through the memory stack and including a semiconductor plug at a bottom portion of the memory string. The semiconductor plug is in contact with the substrate and includes a top portion doped with an etch-resistant material.

Abstract: 3D memory devices with an etch-resistant layer and methods for forming the same are disclosed. A memory device includes a substrate and a memory stack disposed on the substrate. The memory stack includes a plurality of interleaved conductor layers and dielectric layers. The memory device also includes a plurality of memory strings each extending vertically through the memory stack and including a semiconductor plug at a bottom portion of the memory string. The semiconductor plug is in contact with the substrate and includes a top portion doped with an etch-resistant material.

Abstract: A forming method of an epitaxial layer, a forming method of a 3D NAND memory and an annealing apparatus are provided. In the forming method of the epitaxial layer, a first annealing process is performed for eliminating a stress generated in a stacked structure. When performing the first annealing process, a silicon-containing mixture is formed on a sidewall and a bottom surface of a trench. Thus, after performing the first annealing process, a second annealing process is performed for removing the silicon-containing mixture disposed at the sidewall and the bottom surface of the trench, such that when subsequently forming the epitaxial layer, a growth interface of the epitaxial layer is a pure substrate material interface, so as to prevent from be formed a void defect in the epitaxial layer formed in the trench.

Abstract: A forming method of an epitaxial layer, a forming method of a 3D NAND memory and an annealing apparatus are provided. In the forming method of the epitaxial layer, a first annealing process is performed for eliminating a stress generated in a stacked structure. When performing the first annealing process, a silicon-containing mixture is formed on a sidewall and a bottom surface of a trench. Thus, after performing the first annealing process, a second annealing process is performed for removing the silicon-containing mixture disposed at the sidewall and the bottom surface of the trench, such that when subsequently forming the epitaxial layer, a growth interface of the epitaxial layer is a pure substrate material interface, so as to prevent from be formed a void defect in the epitaxial layer formed in the trench.

Abstract: The present invention provides a perfluorophosphate-based drag-reducing agent for gas pipelines. Raw materials for the perfluorophosphate-based drag-reducing agent for gas pipelines consist of fatty acid(s), pyridine(s), fluorophosphates(s) and haloalkane(s) in a mass ratio of 2:1:1:1 to 2:3:1:2. A method for preparing the perfluorophosphate-based drag-reducing agent for gas pipelines is also provided. The perfluorophosphate-based drag-reducing agent for gas pipelines is non-toxic and environmentally friendly, has a high drag reduction percentage, a long-lasting effect, good stability and solubility, does not affect the inner surface and coatings of natural gas pipelines or gas quality, and is suitable for on-line atomization and injection.

Abstract: The present invention provides a mercaptotriazole-based drag-reducing agent for gas pipelines and its preparation method. The drag-reducing agent is prepared by the following steps: producing 1,3-diaminothiourea from hydrazine hydrate and carbon disulfide in a mass ratio of 3:1 to 4:1 under the action of Catalyst I; producing a dithiocarbohydrazone from the condensation reaction of 1,3-diaminothiourea and an aromatic aldehyde in a mass ratio of 1:1 to 1:1.5; producing a mercaptotriazole compound from the dithiocarbohydrazone and an aromatic ester in a mass ratio of 1:1 to 1:3 under the action of Catalyst II; dissolving the mercaptotriazole compound in acetone, adding phosphoric acid or phosphate(s) thereto, and thoroughly mixing them to obtain the target product. The present invention has simple operation and mild reaction conditions and is suitable for online atomization and injection, and the raw materials thereof are available from direct sources.

Abstract: A supercritical carbon dioxide-assisted solid-phase grafting modification method for polypropylene, comprises swelling polypropylene for 0.5 to 10 hours in supercritical carbon dioxide having dissolved vinyl monomer and an initiator, then slowly relieving the pressure; moving the polypropylene that has undergone the swelling process into a reaction kettle, and adding xylene as an interface agent, the mass of xylene being 1% of the polypropylene; increasing the temperature to between 65° C. and 165° C. under normal pressure, and reacting 1 to 10 hours to obtain modified polypropylene; the swelling permeation temperature during the swelling process is from 31° C. to 60° C., the swelling pressure is from 7.5 to 12 MPa; the initiator is an azo compound or a peroxide. In the present method, the grafting rate reaches 5.4%, the thermal property, polarity, and mechanical property all improve substantially, and hydrophilic property is substantially enhanced.