Abstract: One aspect of the present disclosure is a method of fabricating metal gate by forming special layers in place of traditional TiN hard mask over the ILD0 layer to avoid ILD0 losses due to conventional ILD0 CMP. The method can comprise: after the ILD0 CMP, forming a first thin ashable film layer over the ILD0 layer; then forming a second thin dielectric layer over the first layer; during the aluminum CMP process for a first region (PMOS or NMOS), removing the second layer through polishing until the top surface of the first ashable film layer; and then removing first ashable film layer through an ashing method such as burning. In this way, ILD0 loss can be reduced during the first aluminum CMP step and thus can reduce initial height of ILD0, which in turn can reduce the height of initial dummy gate filled in the cavity.

Abstract: The present disclosure addresses and solves the current problem of oxygen accumulation in IL after an HKMG stack is formed. A fabrication method is provided for fabricating high-k/metal gate semiconductor device by forming at least one Titanium (Ti) layer between multiple HK layers. A high-k/metal gate semiconductor device including at least one TiO2 layer between multiple HK layers is also provided.

Abstract: A service registration method and usage method, and a related apparatus are used to reduce risks generated when a service of an AP-type service providing node cannot be registered and a CP-type service providing node provides a service since distributed characteristics of a service providing node are not distinguished in a network partition scenario. The method is: obtaining, by a registration service node, network partition information, and receiving a registration request of a service providing node, where the registration request carries a distributed characteristic of the service providing node, and the distributed characteristic meets both consistency and partition tolerance, or meets both availability and partition tolerance; and determining, by the registration service node according to the network partition information and the distributed characteristic of the service providing node, whether registration of a service provided by the service providing node is allowed.

Abstract: The present invention provides a display panel, a manufacturing method thereof, and a display device. The display panel comprises a base substrate, an opposite substrate, a first electrode, a second electrode, and a plurality of original sub-pixels on at least part of which conversion sub-pixels are provided, and an upper water layer is provided on each of the conversion sub-pixels. The conversion sub-pixel is configured to, when an electric field is generated between the first and second electrodes, shrink to one side of the original sub-pixel so that the upper water layer covers the original sub-pixel from above, and, when no electric field is generated between the first and second electrodes, cover the original sub-pixel located under the conversion sub-pixel from above.

Abstract: Transistors can be used for a variety of electronic-based applications. Therefore, transistor efficiency and performance is of importance. An apparatus is presented herein to increase the locking range of transistors by leveraging cross-coupled injection transistors in conjunction with symmetry injection transistors. The transistor efficiency can also be increase by reducing a parasitic capacitance associated with the components of the transistor.

Abstract: The present invention relates to a modified epoxy acrylate and a method for producing the same, a photoresist composition and a method for producing the same, and a transparent photoresist formed from the photoresist composition. The modified epoxy acrylate is an epoxy acrylate modified with phosphate monomer which has a structure represented by Formula I wherein, n is an integer selected from 1˜21, R is a short-chain carboxylic acid ester group having the structural formula ?in which p is a bivalent saturated or unsaturated carbon chain having 1˜10 carbon atoms, and the carbon chain is optionally substituted by alkyl, alkenyl, hydroxy, nitro or halogen. Since the phosphate can react with the multi-valence metal in substrates so as to connect the polymer onto the substrates firmly through covalent bonds, therefore the adhesion force is improved significantly and the protective function of the tranparent photoresist is improved accordingly.

Abstract: An integrated user profile is provided to PC/console gamers who also participate in other online gaming community activities such as web sites that provide online gamer forums. Provided to the users is the ability to view, access, and/or contribute to their console gamer profile using the other online gaming community activities such as participation in web sites. Also, an identity and profile first created on the web site is that which will be used and stored in game play using the PC/console and online live gaming service.

Abstract: Transistors can be used for a variety of electronic-based applications. Therefore, transistor efficiency and performance is of importance. An apparatus is presented herein to increase the locking range of transistors by leveraging cross-coupled injection transistors in conjunction with symmetry injection transistors. The transistor efficiency can also be increase by reducing a parasitic capacitance associated with the components of the transistor.

Abstract: Transistors can be used for a variety of electronic-based applications. Therefore, transistor efficiency and performance is of importance. An apparatus is presented herein to increase the locking range of transistors by leveraging cross-coupled injection transistors in conjunction with symmetry injection transistors. The transistor efficiency can also be increase by reducing a parasitic capacitance associated with the components of the transistor.

Abstract: Semiconductor devices including semiconductor junctions and semiconductor field effect transistors that exploit the straining of semiconductor materials to improve device performance are provided. Also described are methods for making semiconductor structures. Dislocation defect-free epitaxial grown structures that are embedded into a semiconductor base are provided. The epitaxial structures can extend beyond the surface of the semiconductor base and terminate at a faceted structure. The epitaxial structures are formed using a multilayer growth process that provides for continuous transitions between adjacent layers.

Abstract: The present invention is directed to semiconductor processes and devices. More specifically, embodiments of the present invention provide a semiconductor device that comprises a diamond-shaped cavity, and the shaped cavity is filled with silicon and germanium material. There are other embodiments as well.

Abstract: A method of removing a dummy gate dielectric layer is provided. Firstly a first plasma containing F is utilized to remove the dummy dielectric layer which contains Si and O. Then a second plasma containing H2 is utilized to remove fluorine compound on the surface of the semiconductor substrate. Since the fluorine residue formed after the first plasma treatment reacts with the second plasma to form a gaseous product HF, the fluorine element can be taken away from the semiconductor device with the HF, which prevents inversion layer offset and gate current leakage occurred in the subsequent processing steps due to the fluorine element.

Abstract: Transistors can be used for a variety of electronic-based applications. Therefore, transistor efficiency and performance is of importance. An apparatus is presented herein to increase the locking range of transistors by leveraging cross-coupled injection transistors in conjunction with symmetry injection transistors. The transistor efficiency can also be increase by reducing a parasitic capacitance associated with the components of the transistor.

Abstract: The present invention is directed to semiconductor processes and devices. More specifically, embodiments of the present invention provide a semiconductor device that comprises a modified diamond-shaped cavity, and the shaped cavity is filled with silicon and germanium material. There are other embodiments as well.

Abstract: The present invention is directed to semiconductor processes and devices. More specifically, embodiments of the present invention provide a semiconductor device that comprises a diamond-shaped cavity, and the shaped cavity is filled with silicon and germanium material. There are other embodiments as well.

Abstract: Techniques for measuring and testing a semiconductor wafer during semiconductor device fabrication include designating a test area on the top surface of the wafer and etching a first rectangular trench and a second rectangular trench on the top surface of the wafer in the test area. The trenches are oriented such that a length of the first trench is perpendicular to a length of the second trench, and positioned such that the length of the first trench, if extended, intersects the length of the second trench. A silicon-germanium compound is deposited into the first trench and the second trench, and a test pad is removed from the test area of the wafer. The test pad includes a side surface where both the first trench and the second trench are exposed. The side surface of the test pad is scanned with a transmission electron microscope to take measurements of the silicon-germanium.

Abstract: The invention discloses a treatment process for a semiconductor, comprising providing a substrate; defining a trench opening region of the substrate; performing plasma etching to form a trench region at the trench opening region; subjecting the substrate to a first epitaxial process with a first plurality of gaseous species to form a protective layer overlaying at least the first sidewall and the bottom of the trench region; and subjecting the substrate and the protective layer to a second epitaxial process with a second plurality of gaseous species to form a filling material overlaying the protective layer and being positioned at least partially within the trench region. The invention further provides a semiconductor processing technique used to eliminate or reduce dislocation defect on the semiconductor device and improve device performance.

Abstract: The present invention relates to a modified epoxy acrylate and a method for producing the same, a photoresist composition and a method for producing the same, and a transparent photoresist formed from the photoresist composition. The modified epoxy acrylate is an epoxy acrylate modified with phosphate monomer which has a structure represented by Formula I wherein, n is an integer selected from 1˜21, R is a short-chain carboxylic acid ester group having the structural formula in which p is a bivalent saturated or unsaturated carbon chain having 1˜10 carbon atoms, and the carbon chain is optionally substituted by alkyl, alkenyl, hydroxy, nitro or halogen. Since the phosphate can react with the multi-valence metal in substrates so as to connect the polymer onto the substrates firmly through covalent bonds, therefore the adhesion force is improved significantly and the protective function of the tranparent photoresist is improved accordingly.

Abstract: The present invention provides a display panel, a manufacturing method thereof, and a display device. The display panel comprises a base substrate, an opposite substrate, a first electrode, a second electrode, and a plurality of original sub-pixels on at least part of which conversion sub-pixels are provided, and an upper water layer is provided on each of the conversion sub-pixels. The conversion sub-pixel is configured to, when an electric field is generated between the first and second electrodes, shrink to one side of the original sub-pixel so that the upper water layer covers the original sub-pixel from above, and, when no electric field is generated between the first and second electrodes, cover the original sub-pixel located under the conversion sub-pixel from above.

Abstract: An optical light source is provided. The optical light source includes a waveguide including two reflectors arranged spaced apart from each other to define an optical cavity therebetween, an optical gain medium, and a coupling structure arranged to couple light between the optical cavity and the optical gain medium.