Abstract: A phosphor is disclosed. In an embodiment a phosphor includes an inorganic substance which includes, in its composition, at least an element D, an element Al, an element AX, an element SX and an element NX where D includes one, two or more elements selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, alkali metals and Yb, Al includes one, two or more elements selected from the group consisting of divalent metals not included in D, SX includes one, two or more elements selected from the group consisting of tetravalent metals, AX includes one, two or more elements selected from the group consisting of trivalent metals, and NX includes one, two or more elements selected from the group consisting of O, N, S, C, Cl, and F, wherein the inorganic substance has the same crystal structure as Sr(SraCa1?a)Si2Al2N61.

Abstract: A lighting device includes a first semiconductor body, which has an active zone that produces blue light having a first emission spectrum during operation, and a second semiconductor body, which has an active zone that produces green light having a second emission spectrum during operation. The lighting device also comprises a luminescent substance that is suitable for converting blue light of the first semiconductor body partially into red light having a third emission spectrum. The third emission spectrum has a peak in the red spectral range, the average half-width of which is no greater than 25 nm. The invention further relates to a backlighting device for a display or a television and to a display and a television.

Abstract: A phosphor is disclosed. In an embodiment a phosphor includes an inorganic substance which includes, in its composition, at least an element D, an element Al, an element AX, an element SX and an element NX where D includes one, two or more elements selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, alkali metals and Yb, Al includes one, two or more elements selected from the group consisting of divalent metals not included in D, SX includes one, two or more elements selected from the group consisting of tetravalent metals, AX includes one, two or more elements selected from the group consisting of trivalent metals, and NX includes one, two or more elements selected from the group consisting of O, N, S, C, Cl, and F, wherein the inorganic substance has the same crystal structure as Sr(SraCa1?a)Si2Al2N61.

Abstract: A luminescent material mixture has a first luminescent material and a second luminescent material, wherein, under excitation with blue light, an emission spectrum of the first luminescent material has a relative intensity maximum in a yellowish-green region of the spectrum at a wavelength of greater than or equal to 540 nm and less than or equal to 560 nm and an emission spectrum of the second luminescent material has a relative intensity maximum in an orange-red region of the spectrum at a wavelength of greater than or equal to 600 nm and less than or equal to 620 nm.

Abstract: An electromagnetic radiation emitting assembly includes a carrier, an electromagnetic radiation emitting component arranged above the carrier, and a potting material at least partly surrounding the electromagnetic radiation emitting component and into which are embedded phosphor that converts the electromagnetic radiation and heat-conducting particles that conduct heat arising during operation of the electromagnetic radiation emitting assembly, wherein a phosphor concentration in the potting material near the electromagnetic radiation emitting component is greater than a particle concentration of the heat-conducting particles in the potting material near the electromagnetic radiation emitting component, and a particle concentration of the heat-conducting particles in the potting material near the electromagnetic radiation emitting component is greater than in the potting material remote from the electromagnetic radiation emitting component.

Abstract: A phosphor mixture includes a first phosphor and a second phosphor, wherein an emission spectrum of the first phosphor has a relative intensity maximum in a yellow spectral range and an emission spectrum of the second phosphor has a relative intensity maximum in a red spectral range, the first phosphor corresponds to the following chemical formula: (LuxY1?x)3(Al1?yGay)5O12:Ce3+, where x is greater than or equal to 0 and less than or equal to 1 and where y is greater than or equal to 0 and less than or equal to 0.4, and the phosphor mixture is formed from a plurality of particles, which includes a plurality of particles of the first phosphor and a plurality of particles of the second phosphor.

Abstract: A lighting device includes a first semiconductor body, which has an active zone that produces blue light having a first emission spectrum during operation, and a second semiconductor body, which has an active zone that produces green light having a second emission spectrum during operation. The lighting device also comprises a luminescent substance that is suitable for converting blue light of the first semiconductor body partially into red light having a third emission spectrum. The third emission spectrum has a peak in the red spectral range, the average half-width of which is no greater than 25 nm. The invention further relates to a backlighting device for a display or a television and to a display and a television.

Abstract: A method is provided for producing a radiation-emitting semiconductor chip, in which a first wavelength-converting layer is applied over the radiation exit face of a semiconductor body. The application method is selected from the following group: sedimentation, electrophoresis. In addition, a second wavelength-converting layer is applied over the radiation exit face of the semiconductor body. The second wavelength-converting layer is either produced in a separate method step and then applied or the application method is sedimentation, electrophoresis or printing. Furthermore, a radiation-emitting semiconductor chip and a radiation-emitting component are provided.

Abstract: In at least one embodiment, an optoelectronic semiconductor component includes an optoelectronic semiconductor chip. The semiconductor component includes a conversion element that is arranged to convert at least some radiation emitted by the semiconductor chip into radiation of a different wavelength. The conversion element comprises at least one luminescent substance and scattering particles and also at least one matrix material. The scattering particles are embedded in the matrix material. A difference in the refractive index between the matrix material and a material of the scattering particles at a temperature of 300 K is at the most 0.15. The difference in the refractive index between the matrix material and the material of the scattering particles at a temperature of 380 K is greater than at a temperature of 300 K.

Abstract: A phosphor mixture includes a first phosphor and a second phosphor, wherein an emission spectrum of the first phosphor has a relative intensity maximum in a yellow spectral range and an emission spectrum of the second phosphor has a relative intensity maximum in a red spectral range, the first phosphor corresponds to the following chemical formula: (LuxY1-x)3(Al1-yGay)5O12:Ce3+, where x is greater than or equal to 0 and less than or equal to 1 and where y is greater than or equal to 0 and less than or equal to 0.4, and the phosphor mixture is formed from a plurality of particles, which includes a plurality of particles of the first phosphor and a plurality of particles of the second phosphor.

Abstract: A light source includes a primary radiation source, which emits radiation in the shortwave range of the optical spectral range, wherein this radiation is converted at least by means of a first luminescent substance entirely or partially into secondary longer-wave radiation in the visible spectral range, wherein the first luminescent substance originates from the class of nitridic modified orthosilicates (NOS), wherein the luminescent substance has as a component M predominantly the group EA=Sr, Ba, Ca, or Mg alone or in combination, wherein the activating dopant D is composed at least of Eu and replaces a proportion of M, and wherein a proportion of SiO2 is introduced in deficiency, so that a modified sub-stoichiometric orthosilicate is provided, wherein the orthosilicate is an orthosilicate stabilized with RE and N, where RE=rare earth metal.

Abstract: A semiconductor unit (10) is provided which comprises a first semiconductor chip (1a) and a second semiconductor chip (1b). The first and second semiconductor chip (1a, 1b) each have an active layer (1a, 1b) suitable for generating radiation. A first converter (3a) which comprises a yellow phosphor with an added red phosphor is arranged downstream of the first semiconductor chip (1a). A second converter (3b) which comprises a yellow phosphor with an added green phosphor is arranged downstream of the second semiconductor chip (1b). A module having a plurality of such units (10) is also provided.

Abstract: A method is provided for producing a radiation-emitting semiconductor chip, in which a first wavelength-converting layer is applied over the radiation exit face of a semiconductor body. The application method is selected from the following group: sedimentation, electrophoresis. In addition, a second wavelength-converting layer is applied over the radiation exit face of the semiconductor body. The second wavelength-converting layer is either produced in a separate method step and then applied or the application method is sedimentation, electrophoresis or printing. Furthermore, a radiation-emitting semiconductor chip and a radiation-emitting component are provided.