Abstract: Certain aspects are directed to a static random access memory (SRAM) including an SRAM cell with a pass-gate (PG) transistor having increased threshold voltage to improve the read margin of the SRAM cell. The SRAM generally includes a first SRAM cell having a pull-down (PD) transistor and a PG transistor coupled to the PD transistor. In certain aspects, the SRAM includes a second SRAM cell, the second SRAM cell being adjacent to the first SRAM cell and having a PD transistor and a PG transistor coupled to the PD transistor of the second SRAM cell. The SRAM may also include a gate contact region coupled to a gate region of the PG transistor of the first SRAM cell, wherein at least a portion of the gate contact region is offset from a midpoint between the first SRAM cell and the second SRAM cell.

Abstract: Certain aspects of the present disclosure are directed to a semiconductor device. The semiconductor device generally includes a substrate, at least one silicon-on-insulator (SOI) transistor disposed above the substrate, a gate-all-around (GAA) transistor disposed above the substrate, and a fin field-effect transistor (FinFET) disposed above the substrate.

Abstract: A method for processing an audio signal is provided. In the method, audio signals sent by at least two sound sources are acquired by at least two microphones to obtain multiple frames of original noisy signals of each microphone on a time domain. For each frame, frequency-domain estimation signals of each sound source are acquired according to the original noisy signals of the at least two microphones. For each sound source, the frequency-domain estimation signals are divided into multiple frequency-domain estimation components on a frequency domain. For each sound source, feature decomposition is performed on a related matrix of each frequency-domain estimation component to obtain a target feature vector. A separation matrix of each frequency point is obtained based on target feature vectors and the frequency-domain estimation signals. The audio signals of sounds are obtained based on the separation matrixes and the original noisy signals.

Abstract: A cell circuit includes a first power rail, having a first line length, in a first layer. The first power rail is configured to receive a first voltage for the cell circuit. The cell circuit includes multiple lines in a second layer and a shunt in a third layer. The shunt is electrically coupled to the first power rail and a first set of lines of the multiple lines. The shunt has a second line length shorter than the first line length. The cell circuit includes another shunt in t the third layer. The other shunt is also parallel to the first power rail. The other shunt is electrically coupled to the first power rail and a second set of lines of the multiple lines. The other shunt has a third line length shorter than the first line length.

Abstract: A cellulose ester composition is provided comprising at least one cellulose ester and at least one ethylene vinyl acetate copolymer and optionally at least one plasticizer. Processes for producing the cellulose ester compositions as well as articles made using these compositions, such as eyeglass frames, automotive parts, and toys are also provided.

Abstract: A method for correcting projection images in CT image reconstruction is provided. The method may include obtaining a plurality of projection images of a subject. Each of the plurality of projection images may correspond to one of the plurality of gantry angles. The method may further include correcting a first projection image of the plurality of projection images according to a process for generating a corrected projection image. The process may include performing, based on the first projection image and a second projection image of the plurality of projection images, a first correction on the first projection image to generate a preliminary corrected first projection image. The process may also include performing, based on at least part of the preliminary corrected first projection image, a second correction on the preliminary corrected first projection image to generate a corrected first projection image corresponding to the first gantry angle.

Abstract: In some embodiments, apparatuses and methods are provided herein useful to automatically annotating images. In some embodiments, a system for automatically annotating images comprises a database, wherein the database is configured to store images and annotations for the images and a control circuit, wherein the control circuit is communicatively coupled to the database, and wherein the control circuit is configured to retrieve, from the database, an image, generate, based on the image, a collection of augmented images, generate segmentation maps for each image in the collection of augmented images, wherein each of the segmentation maps include segments, select, based on a threshold, ones of the segments above a threshold, merge the ones of the segments above the threshold to create a segmented image, and generate, for each segment of the segmented image, classifications, wherein an annotation for the image includes the segmented images and the classifications.

Abstract: In some embodiments, apparatuses and methods are provided herein useful to detecting text in images. In some embodiments, a system for detecting text in images comprises a database configured to store images and a control circuit configured to retrieve an image, generate, based on the image, a collection of augmented images, detect characters in each of the augmented images, generate bounding boxes for the characters in each of augmented images, recognize the characters in each of the augmented images, select, based on the recognition of the characters in each of the augmented images, candidate characters, wherein the candidate characters are selected based on consistency of the recognition of the characters in each of the augmented images, detect, for the image, a color associated with the characters, and store, in the database, the image, the candidate characters, and the color associated with the characters.

Abstract: An application method of the thermal error-temperature loop in the spindle of a CNC machine tool. This uses a bar and two displacement sensors to determine radial thermal errors of the spindle. Meanwhile two temperature sensors are used to determine the temperature of the upper and lower surfaces of the spindle box. Then, the thermal error-temperature loop is drawn with the temperature difference between two temperature sensors as the abscissa and the radial thermal error of the spindle as the ordinate. Finally, the loop is employed to analyze the mechanism of the radial thermal deformation of the spindle and the thermal error level is evaluated. Since the method is based on measured data, the results of the analysis are closer to the reality, compared to those from the numerical simulations.

Abstract: Circuits employing an adjacent low-k dummy gate to a field-effect transistor (FET) to reduce FET source/drain parasitic capacitance, and related fabrication methods. To reduce or mitigate an increase in the source/drain parasitic capacitance(s) of a FET, a dummy gate adjacent to an active gate of the FET is provided to have a low-k (i.e., low relative permittivity). In this manner, the relative permittivity (k) between the source/drain of the FET and an adjacent dummy gate and/or source/drain of another FET is reduced, thereby reducing the parallel plate capacitance of the FET(s). Reducing parasitic capacitance of the FET(s) may allow further reduced scaling of the circuit to offset or mitigate a lack of reduction or increase in parasitic capacitance as a result of reducing gate pitch in the circuit. As gate pitch is reduced in the circuit, it may not be possible to proportionally reduce gate size without sacrificing gate control.

Abstract: Certain aspects of the present disclosure generally relate to a semiconductor device with a gate-cut isolation structure. An example method of fabricating semiconductor device generally includes forming a dielectric region between a first semiconductor region and a second semiconductor region. The method also includes forming a first gate region disposed above and spanning a width of the dielectric region between the first and second semiconductor regions, wherein the first gate region is also disposed above at least a portion of the first semiconductor region and above at least a portion of the second semiconductor region. The method further includes concurrently forming an SDB and a gate-cut isolation structure, wherein the SDB intersects the first and second semiconductor regions and wherein the gate-cut isolation structure electrically separates the first gate region into a first portion associated with the first semiconductor region and a second portion associated with the second semiconductor region.

Abstract: Steroid derivative regulators, a method for preparing the same, and uses thereof are described. Specifically, a compound of formula (I), a preparation method therefor, a pharmaceutical composition containing the compound, and uses thereof as a regulator the of GABAA receptor for treating depression, convulsion, Parkinson's disease, and nervous system diseases are described, wherein the substituents of the formula (I) are as defined in the description.

Abstract: Certain aspects of the present disclosure are directed to a semiconductor device. The semiconductor device generally includes a ferroelectric (FE) semiconductor device having a channel region; a gate oxide; a FE region, wherein the gate oxide is disposed between the FE region and the channel region; a gate region, wherein the FE region is disposed between the gate oxide and the gate region; a first semiconductor region disposed adjacent to the channel region; and a second semiconductor region disposed adjacent to the channel region. The semiconductor device may also include a transistor, wherein a region of the transistor is connected to the gate region, the first semiconductor region, or the second semiconductor region of the FE semiconductor device.

Abstract: We describe a space-division multiplexed (SDM) fibre, reconfigurable, wavelength-selective switch (WSS).

Abstract: A data storage device that provides priority-based internal data movement includes a controller communicatively coupled to volatile memory and to non-volatile memory circuits, where the controller is configured to queue requests in a plurality of queues in the volatile memory, where each of the requests is associated with one of a plurality of internal data movement command types. The controller is also configured to select one of the plurality of queues based on a prioritization of the plurality of internal data movement command types. The controller is also configured to determine that the selected queue includes at least one request of the associated internal data movement command type. The controller is also configured to issue the at least one request from the selected queue to at least one of the non-volatile memory circuits.

Abstract: The present disclosure relates to an image processing method, an image processing device, and a storage medium. The method comprises: acquiring an image to be processed; acquiring, by performing an encoding processing on the image to be processed, probability distribution data of features of a person object in the image to be processed as target probability distribution data, the features being used for identifying an identity of the person object; and acquiring, by performing retrieving in a database using the target probability distribution data, images in the database having probability distribution data matching the target probability distribution data as a target image. Corresponding device, processor and storage medium are also disclosed.

Abstract: Circuits employing on-diffusion (OD) edge (ODE) dummy gate structures in cell circuit with increased gate dielectric thickness to reduce leakage current are disclosed. A gate dielectric structure may be formed between a work function metal structure of an ODE dummy gate structure and an active semiconductor structure in a cell circuit, and is provided to be thicker than a gate dielectric structure formed between a work function metal structure and an active gate(s) in the cell circuit. Providing a gate dielectric structure of increased thickness can reduce damage to the gate dielectric structure providing isolation between the ODE dummy gate structure and the active semiconductor structure. Providing a gate dielectric structure of increased thickness can also reduce the gap area adjacent to the ends of the active semiconductor structures and thus reduce the volume of work function metal structure formed in the gaps to further reduce leakage current.

Abstract: Certain aspects of the present disclosure generally relate to a single diffusion break having a conductive portion. An example semiconductor device generally includes a first semiconductor region, a second semiconductor region, a dielectric region, and a single diffusion break (SDB). The dielectric region is disposed between the first semiconductor region and the second semiconductor region. The SDB intersects at least one of the first semiconductor region or the second semiconductor region, and the SDB comprises an electrically conductive portion.

Abstract: Certain aspects of the present disclosure generally relate to a static random-access memory (SRAM) implemented using both a gate-all-around (GAA)-type transistor and a fin field-effect transistor (FinFET). For example, certain aspects are directed to an SRAM memory cell having a flip-flop (FF) having a pull-up (PU) transistor and a pull-down (PD) transistor, and a pass-gate (PG) transistor coupled between a bit line of the SRAM memory cell and the FF, a gate of the PG transistor being coupled to a word line (WL) of the SRAM memory cell. In certain aspects, at least one of the PU transistor, the PD transistor, or the PG transistor comprises a GAA transistor, and at least another one of the PU transistor, the PD transistor, or the PG transistor comprises a FinFET.

Abstract: A method, apparatus and communication system for registering address information of a network anchor point to a network server, the method including receiving, by a packet data network gateway, a request message from a mobility management entity, determining, by the packet data network gateway in response to the request message, to register identity information of the packet data network gateway to a home subscriber server, and registering, to the home subscriber server, by the packet data network gateway in response to the determining to register the identity information, the identity information of the packet data network gateway and an access point name corresponding to the packet data network gateway.