Abstract: A cellulose ester composition is provided comprising at least one cellulose ester and at least one impact modifier and optionally at least one plasticizer. Processes for producing the cellulose ester compositions as well as articles made using these compositions, such as eyeglass frames, automotive parts, and toys are also provided.

Abstract: A cellulose ester composition is provided comprising at least one cellulose ester and at least one impact modifier and optionally at least one plasticizer. Processes for producing the cellulose ester compositions as well as articles made using these compositions, such as eyeglass frames, automotive parts, and toys are also provided.

Abstract: The present disclosure provides vectors, methods and kits for for delivery and stable expression of CRISPR/Cas components capable of inducing genetic modification of cells, followed by recombinase-mediated excision of some or all of these components after the cells have been successfully genetically modified. The disclosed vectors and methods provide for reduced immunogenic effects arising from one or more CRISPR/Cas components. The disclosed vectors comprise coding sequences that encode a Cas protein, detectable markers and a guide RNA. The disclosed vectors provide for the subsequent genomic excision of the CRISPR/Cas components after successful genetic modification, as mediated by recombinase recognition of recombination sites flanking one or more of the disclosed coding sequences. The present disclosure further provides methods of generating a population of genetically modified tumor cells for screening a candidate target gene for cancer immunotherapy.

Abstract: Methods, systems, and devices for double side back-end-of-line (BEOL) metallization for pseudo through-silicon via (pTSV) integration are described. An integrated circuit (IC) may include multiple metallic layers integrated within multiple layers of a multi-dimensional integrated stack (e.g., a three dimensional (3D) integrated stack). By performing a BEOL metallization process, the integrated circuit may implement techniques for 3D vertical chip integration. For example, a first set of layers may be formed during a first portion of a BEOL process and a second portion of the BEOL process may integrate a second set of metallic layers as well as a buried power delivery network (PDN). The metallic layers may form a number of pTSVs and may promote a PDN to experience a reduced PDN IR drop. The PDN may be integrated and the pTSVs may be formed by integrating the metallic layers within a number of dielectric layers.

Abstract: Certain aspects of the present disclosure generally relate to a semiconductor device with buried rails (e.g., buried power and ground rails). One example semiconductor device generally includes a substrate; a first rail, wherein a portion of the first rail is disposed in the substrate, the portion of the first rail having a first width greater than a second width of another portion of the first rail; a second rail, wherein a portion of the second rail is disposed in the substrate, the portion of the second rail having a third width greater than a fourth width of another portion of the second rail; and one or more transistors disposed above the substrate and between the first rail and the second rail.

Abstract: A method and system for determining an irradiation dose. The method for determining the irradiation dose includes determining a pixel having a biological feature in a region of interest in a radiotherapy simulated locating image by using a retrospective label; extracting a local radiomics feature based on the pixel having the biological feature, in which the local radiomics feature includes a grayscale histogram intensity, a tumor shape feature, a textural feature, a Laplacian of Gaussian filtering feature, and a wavelet feature; acquiring the local radiomics features to be measured; identifying a positive region having the local radiomics features to be measured based on the local radiomics features; performing three-dimensional reconstruction for the peripheral boundary of the positive region to determine a three-dimensional image.

Abstract: A semiconductor device comprising an N-type metal oxide semiconductor (NMOS) gate-all-around (GAA) transistor and a P-type metal oxide semiconductor (PMOS) GAA transistor with high charge mobility channel materials is disclosed. The semiconductor device may include a substrate. The semiconductor device may also include an NMOS GAA transistor on the substrate, wherein the NMOS GAA transistor comprises a first channel material. The semiconductor device may further include a PMOS GAA transistor on the substrate, wherein the PMOS GAA transistor comprises a second channel material. The first channel material may have an electron mobility greater than an electron mobility of Silicon (Si) and the second channel material may have a hole mobility greater than a hole mobility of Si.

Abstract: A transistor channel profile structure may be improved to provide better transistor circuits performance. In one example, a transistor circuit may include different fin profiles for the NMOS transistors and the PMOS transistors, such as the NMOS fins are thicker than the PMOS fins or the NMOS fin has a straight vertical surface and the PMOS fin has a notch at a fin bottom region. In still another example, a transistor circuit may include different nano-sheet profiles for a NMOS GAA device and a PMOS GAA device where the NMOS nano-sheet is thicker than the PMOS nano-sheet. Such configurations optimize the NMOS and the PMOS transistors with the NMOS having a low channel resistance while the PMOS has a lower short channel effect.

Abstract: A charge pump circuit includes: a charge pump core circuit configured to generate an output voltage, an oscillator configured to provide a clock signal for the charge pump core circuit, and a feedback circuit configured to control the oscillator based on the output voltage, wherein the feedback circuit includes an inner loop.

Abstract: An original noisy signal of each of at least two microphones is acquired by acquiring, using the at least two microphones, an audio signal emitted by each sound source. For each frame in time domain, an estimated frequency-domain signal of each sound source is acquired according to the original noisy signal of each of the at least two microphones. A frequency collection containing a plurality of predetermined static frequencies and dynamic frequencies is determined in a predetermined frequency band range. A weighting coefficient of each frequency contained in the frequency collection is determined according to the estimated frequency-domain signal of the each frequency in the frequency collection. A separation matrix of the each frequency is determined according to the weighting coefficient. The audio signal emitted by each of the at least two sound sources is acquired based on the separation matrix and the original noisy signal.

Abstract: Certain aspects of the present disclosure generally relate to a semiconductor device with a heterojunction bipolar transistor (HBT) integrated with a gate-all-around (GAA) transistor. One example semiconductor device generally includes a first substrate, a second substrate adjacent to the first substrate, a GAA transistor disposed above the first substrate, and a HBT disposed above the second substrate. Other aspects of the present disclosure generally relate to a method for fabricating a semiconductor device. An exemplary fabrication method generally comprises forming a GAA transistor disposed above a first substrate and forming a HBT disposed above a second substrate, wherein the second substrate is adjacent to the first substrate.

Abstract: Provided are an audio signal processing method and device. The method can include acquiring audio signals from at least two sound sources through at least two microphones to obtain multiple frames of original noise signals of the at least two microphones in a time domain, and, for each frame in the time domain, acquiring respective frequency-domain estimated signals of the at least two sound sources according to the respective original noise signals. The method can further include, for each sound source, dividing the frequency-domain estimated signal into frequency-domain estimated components which each corresponds to a frequency-domain sub-band and includes multiple frequency point data in a frequency domain, determining a weighting coefficient of each frequency point in the frequency-domain sub-band, and updating a separation matrix of each frequency point according to the weighting coefficient and obtaining the audio signals based on the updated separation matrices and the original noise signals.

Abstract: A method for processing audio signal includes that: audio signals emitted respectively from at least two sound sources are acquired through at least two microphones to obtain respective original noisy signals of the at least two microphones; sound source separation is performed on the respective original noisy signals of the at least two microphones to obtain respective time-frequency estimated signals of the at least two sound sources; a mask value of the time-frequency estimated signal of each sound source in the original noisy signal of each microphone is determined based on the respective time-frequency estimated signals; the respective time-frequency estimated signals of the at least two sound sources are updated based on the respective original noisy signals of the at least two microphones and the mask values; and the audio signals emitted respectively from the at least two sound sources are determined.

Abstract: The present disclosure provides an ink cartridge verification method, a system, a readable storage medium and a device. The method comprises: obtaining the total quantity of spray points of the ink cartridge; detecting the spray points of the ink cartridge to obtain the quantity of malfunctional spray points; when the ratio of the quantity of malfunctional spray points to the total quantity is less than or equal to a first preset ratio, determining that the ink cartridge passes verification. The malfunctional spray points are detected to obtain the ratio of the quantity of malfunctional spray points to the total quantity; when the ratio is low, it is determined that the ink cartridge passes verification, there will be no obvious influences on ink cartridge printing and the ink cartridge can be in normal use; and thus, the printing effect can be reflected after the ink cartridge is regenerated after being filled with ink.

Abstract: A gate-all-around (GAA) transistor has an insulator on a substrate. The GAA transistor also may have different crystalline structures for P-type work material and N-type work material. The GAA transistor includes one or more channels positioned between a source region and a drain region. The one or more channels, which may be nanowire, nanosheet, or nanoslab semiconductors, are surrounded along a longitudinal axis by gate material. At a first end of the channel is a source region and at an opposite end of the channel is a drain region. To reduce parasitic capacitance between a bottom gate section and a substrate, an insulator is added on the substrate. Further improvements are made in performance of a circuit having both P-type work material and N-type work material by providing different crystalline lattice structures for the work material.

Abstract: A display method is applied to electronic equipment including a display assembly. A display content displayed by the display assembly includes a background and an object for reading located on the background. The display method includes: differentiating grayscales of background pixels of the background; and displaying the background based on the background pixels with the differentiated grayscales, and displaying the object for reading.

Abstract: The invention provides in vivo methods for identifying cancer-associated immunotherapy targets.

Abstract: Certain aspects of the present disclosure generally relate to a semiconductor device having an insulator region disposed on at least one edge of a semiconductor fin structure. An example semiconductor device generally includes a first semiconductor region, an insulator region, a double diffusion break, and a first gate region. The first semiconductor region comprises a first fin structure and a second fin structure separated by a cavity. The insulator region is disposed along an edge of the first fin structure. The double diffusion break is disposed adjacent to the insulator region in the cavity. The first gate region is disposed around a portion of the first fin structure.

Abstract: Methods and apparatus for a synchronized multi-directional transfer on an inter-processor communication (IPC) link. In one embodiment, the synchronized multi-directional transfer utilizes one or more buffers which are configured to accumulate data during a first state. The one or more buffers are further configured to transfer the accumulated data during a second state. Data is accumulated during a low power state where one or more processors are inactive, and the data transfer occurs during an operational state where the processors are active. Additionally, in some variants, the data transfer may be performed for currently available transfer resources, and halted until additional transfer resources are made available. In still other variants, one or more of the independently operable processors may execute traffic monitoring processes so as to optimize data throughput of the IPC link.

Abstract: Disclosed is a segmented thermoplastic elastomer that can be a polyurethane, polyurea, or polyurethane-urea comprising soft segments and hard segments, wherein the soft segments are made of polyolefin diols or polyolefin diamine that may have 0 to 1000 carbon atoms in the main chain, wherein each carbon atom in the main chain may have 0 to 2 side chains and each side chain may have 0 to 30 carbon atoms, the hard segment is made of a diisocyante and a chain extender, the hard segments make up 10-60% of the elastomer and the soft segments make up the rest, the number-average molecular weight of the elastomer is 5×103-1000×103 g/mol, the ultimate elongation of the elastomer is 100-1000%, the Young's modulus is 1 to 3,000 MPa, and the ultimate tensile strength is 10-100 MPa. Also disclosed are a method for preparing the segmented thermoplastic elastomer and use of segmented thermoplastic elastomer.