Abstract: The disclosure relates to the technical field of display, in particular to a luminescent film, a preparation method thereof, and an electroluminescent device. The luminescent film comprises: a crystallized blue-light perovskite material, and halogenated amine ligand materials grafted on the crystallized blue-light perovskite material, wherein the crystallized blue-light perovskite material comprises 3D perovskite nano-crystals; and the halogenated amine ligand materials comprise a first halogenated amine ligand material and a second halogenated amine ligand material, and the first halogenated amine ligand material is different from the second halogenated amine ligand material. The disclosure is suitable for manufacturing luminescent films and electroluminescent devices.

Abstract: A method for preparing a ZnSe quantum dot, a ZnSe quantum dot, a ZnSe structure and a display device are provided. The method includes preparing a first zinc precursor solution, a second zinc precursor solution, a first selenium precursor solution, and a second selenium precursor solution with a lower reaction activity than the first selenium precursor solution, adding the first selenium precursor solution to the second zinc precursor solution to form an intermediate of the ZnSe quantum dot, performing the following operation at least once to form the ZnSe quantum dot: sequentially adding the first zinc precursor solution and the second selenium precursor solution to the intermediate of the ZnSe quantum dot and making the first zinc precursor solution, the second selenium precursor solution, and the intermediate of the ZnSe quantum dot react.

Abstract: Disclosed belongs to the technical field of displaying, and relates to a quantum dot light emitting diode and a method for manufacturing the same, and a display panel. The method for manufacturing the quantum dot light emitting diode comprises steps of forming a cathode, an electron transport layer doping a substance capable of trapping current carriers comprising a N-type metal oxide and a quantum dot material with a surface ligand comprising a hydroxyl group, a light emitting layer, a hole transport layer and an anode. The quantum dot light emitting diode can effectively reduce the electron transport or injection by incorporating a substance capable of trapping current carriers, and therefore significantly improve the luminous efficiency. Meanwhile, the PEDOT:PSS with high conductivity is used as the transparent anode, and thus the whole structure may be manufactured totally by using solution processes at low cost and without high vacuum coating machines.

Abstract: A method for preparing a quantum dot, a quantum dot, and a display device, are provided. The method includes the following steps: providing a first precursor solution, a second precursor solution, a first selenium precursor solution, and a second selenium precursor solution with a lower reaction activity than the first selenium precursor solution; adding the first selenium precursor solution to the second precursor solution to form an intermediate of the quantum dot; performing the following step at least once to form the quantum dot: adding the first precursor solution and the second selenium precursor solution to the intermediate of the quantum dot and making them react.

Abstract: The present application discloses a composite light-emitting material, a production method thereof, and use thereof, wherein the composite light-emitting material has a perovskite nanomaterial and a matrix; the perovskite nanomaterial comprises ?-CsPbI3 and an addition element M; and the addition element M is selected from at least one of Li, Na, K, and Rb.

Abstract: Disclosed belongs to the technical field of displaying, and relates to a quantum dot light emitting diode and a method. for manufacturing the same, and a display panel. The method for manufacturing the quantum dot light emitting diode comprises steps of forming a cathode, an electron transport layer doping a substance capable of trapping current carriers comprising a N-type metal oxide and a quantum dot material with a surface ligand comprising a hydroxyl group, a light emitting layer, a hole transport layer and an anode. The quantum dot light emitting diode can effectively reduce the electron transport or injection by incorporating a substance capable of trapping current carriers, and therefore significantly improve the luminous efficiency. Meanwhile, the PEDOT:PSS with high conductivity is used as the transparent anode, and thus the whole structure may be manufactured totally by using solution processes at low cost and without high vacuum coating machines.

Abstract: The present application discloses a method of preparing a luminescent nano-sheet. The method includes preparing a precursor emulsion solution containing a metal halide and RNH3X, and having a molar ratio of metal halide to RNH3X in a range of approximately 0.6 to approximately 0.8; demulsifying the precursor emulsion solution to obtain a perovskite quantum dots material and a demulsified solution; and forming the luminescent nano-sheet by allowing the perovskite quantum dots material self-assemble into the luminescent nano-sheet. X is a halide, R is selected from alkyl, alkenyl, alkynyl, cycloalkyl, cycloalkenyl, cycloalkynyl, aryl, heteroaryl, and heterocyclyl.

Abstract: The present disclosure relates to a quantum dot light-emitting layer, a quantum dot light-emitting device and preparing methods therefor and belongs to the field of liquid crystal display. The preparing method for a quantum dot light-emitting layer includes: placing a first halide AX and a second halide BX2 in a solvent; stirring and dispersing the reaction system formed by the first halide AX, the second halide BX2 and the solvent at a set temperature for a set time period; cooling the reaction system at a cooling rate of 0.1° C./24 h-1° C./24 h to generate an A4BX6 single crystal thin film containing ABX3 quantum dots, and using the A4BX6 single crystal thin film containing ABX3 quantum dots as the quantum dot light-emitting layer; wherein A includes one of Cs+, CH3NH3+ and HC(NH2)2+; B includes one of Pb2+ and Sn2+; and X includes one of Cl?, Br? and I?.

Abstract: The present disclosure discloses a polymer-based nanocomposite and an optical filter based thereon, wherein components of the polymer-based nanocomposite have a polymer matrix and a semiconductor material; and the polymer-based nanocomposite has an average light transmittance of greater than 90% in at least one light-transmitting wavelength range and a light transmittance of less than 1% in at least one cut-off wavelength range, wherein the semiconductor material is a non-radiative recombination-type perovskite material.

Abstract: Provided is a composite luminescent material. The composite luminescent material comprises: a matrix; and perovskite nanoparticles. The perovskite nanoparticles are dispersed in the matrix, wherein the mass ratio of the perovskite nanoparticles matrix to the perovskite nanoparticles is 1:(1-50).

Abstract: Provided is a hybridized perovskite quantum dot material. The quantum dot material includes a kernel and surface ligands. The kernel is formed by R1NH3AB3 or (R2NH3)2AB4, where R1 is methyl group, R2 is an organic molecular group, A is at least one selected from Ge, Sn, Pb, Sb, Bi, Cu and Mn, B is at least one selected from Cl, Br and I, A and B form a coordination octahedral structure, and R1NH3 or R2NH3 is filled in gaps of the coordination octahedral structure. The surface ligand is an organic acid or organic amine. The quantum dot material has a high fluorescence quantum yield.

Abstract: Provided is a hybridized perovskite quantum dot material. The quantum dot material includes a kernel and surface ligands. The kernel is formed by R1NH3AB3 or (R2NH3)2AB4, where R1 is methyl group, R2 is an organic molecular group, A is at least one selected from Ge, Sn, Pb, Sb, Bi, Cu and Mn, B is at least one selected from Cl, Br and I, A and B form a coordination octahedral structure, and R1NH3 or R2NH3 is filled in gaps of the coordination octahedral structure. The surface ligand is an organic acid or organic amine. The quantum dot material has a high fluorescence quantum yield.

Abstract: Provided is a hybridized perovskite quantum dot material. The quantum dot material comprises a kernel and surface ligands. The kernel is formed by R1NH3AB3 or (R2NH3)2AB4, where R1 is methyl group, R2 is an organic molecular group, A is at least one selected from Ge, Sn, Pb, Sb, Bi, Cu and Mn, B is at least one selected from Cl, Br and I, A and B form a coordination octahedral structure, and R1NH3 or R2NH3 is filled in gaps of the coordination octahedral structure. The surface ligand is an organic acid or organic amine. The quantum dot material has a high fluorescence quantum yield.

Abstract: The present disclosure provides a diode device comprising a first electrode, a hole transport layer, a functional layer, an electron transport layer and a second electrode that are stacked, wherein the functional layer comprises at least one sub-functional layer each comprising a photo-detection layer and an electroluminescent layer which are stacked and a difference of energy barriers between the photo-detection layer and the electroluminescent layer is not more than 1.5 eV; the photo-detection layer comprises a nanocrystalline derived from a copper indium sulfide system compound, and the electroluminescent layer comprises an oil-soluble nanocrystalline. The present disclosure further provides a method for manufacturing a diode device, and a diode apparatus having both electro-luminescence and photoelectric response properties, and higher material universal applicability.

Abstract: The present disclosure provides a diode device comprising a first electrode, a hole transport layer, a functional layer, an electron transport layer and a second electrode that are stacked, wherein the functional layer comprises at least one sub-functional layer each comprising a photo-detection layer and an electroluminescent layer which are stacked and a difference of energy barriers between the photo-detection layer and the electroluminescent layer is not more than 1.5 eV; the photo-detection layer comprises a nanocrystalline derived from a copper indium sulfide system compound, and the electroluminescent layer comprises an oil-soluble nanocrystalline. The present disclosure further provides a method for manufacturing a diode device, and a diode apparatus having both electro-luminescence and photoelectric response properties, and higher material universal applicability.

Abstract: The present disclosure relates to a quantum dot light-emitting layer, a quantum dot light-emitting device and preparing methods therefor and belongs to the field of liquid crystal display. The preparing method for a quantum dot light-emitting layer includes: placing a first halide AX and a second halide BX2 in a solvent; stirring and dispersing the reaction system formed by the first halide AX, the second halide BX2 and the solvent at a set temperature for a set time period; cooling the reaction system at a cooling rate of 0.1° C./24 h?1° C./24 h to generate an A4BX6 single crystal thin film containing ABX3 quantum dots, and using the A4BX6 single crystal thin film containing ABX3 quantum dots as the quantum dot light-emitting layer; wherein A includes one of Cs+, CH3NH3+ and HC(NH2)2+; B includes one of Pb2+ and Sn2+; and X includes one of Cl?, Br? and I?.

Abstract: The present application discloses a method of preparing a luminescent nano-sheet. The method includes preparing a precursor emulsion solution containing a metal halide and RNH3X, and having a molar ratio of metal halide to RNH3X in a range of approximately 0.6 to approximately 0.8; demulsifying the precursor emulsion solution to obtain a perovskite quantum dots material and a demulsified solution; and forming the luminescent nano-sheet by allowing the perovskite quantum dots material self-assemble into the luminescent nano-sheet. X is a halide, R is selected from alkyl, alkenyl, alkynyl, cycloalkyl, cycloalkenyl, cycloalkynyl, aryl, heteroaryl, and heterocyclyl.

Abstract: The present application discloses a method of preparing a luminescent nano-sheet. The method includes preparing a precursor emulsion solution containing a metal halide and RNH3X, and having a molar ratio of metal halide to RNH3X in a range of approximately 0.6 to approximately 0.8; demulsifying the precursor emulsion solution to obtain a perovskite quantum dots material and a demulsified solution; and forming the luminescent nano-sheet by allowing the perovskite quantum dots material self-assemble into the luminescent nano-sheet. X is a halide, R is selected from alkyl, alkenyl, alkynyl, cycloalkyl, cycloalkenyl, cycloalkynyl, aryl, heteroaryl, and heterocyclyl.

Abstract: The present application discloses a method of preparing a luminescent nano-sheet. The method includes preparing a precursor emulsion solution containing a metal halide and RNH3X, and having a molar ratio of metal halide to RNH3X in a range of approximately 0.6 to approximately 0.8; demulsifying the precursor emulsion solution to obtain a perovskite quantum dots material and a demulsified solution; and forming the luminescent nano-sheet by allowing the perovskite quantum dots material self-assemble into the luminescent nano-sheet. X is a halide, R is selected from alkyl, alkenyl, alkynyl, cycloalkyl, cycloalkenyl, cycloalkynyl, aryl, heteroaryl, and heterocyclyl.

Abstract: Provided is a composite luminescent material. The composite luminescent material comprises: a matrix; and perovskite nanoparticles. The perovskite nanoparticles are dispersed in the matrix, wherein the mass ratio of the perovskite nanoparticles matrix to the perovskite nanoparticles is 1:(1-50).