Abstract: A source and drain electrode layer (3s/3d) of an oxide TFT element (3) is formed by a first conductive layer. A gate electrode (3g) of the oxide TFT element (3) and a gate electrode (5g) of an a-Si TFT element (5) are formed by a single conductive layer, that is, a second conductive layer. A source and drain electrode layer (5s/5d) of the a-Si TFT element (5) is formed by a third conductive layer. The third conductive layer is formed above the second conductive layer in a thickness direction in which each conductive layer is stacked on an insulating substrate (2). Further, the first conductive layer is formed below the second conductive layer in the thickness direction. Therefore, it is possible to provide a circuit board that can have an improved degree of integration of transistor elements formed on the insulating substrate.

Abstract: A circuit board (1) includes a plurality of transistor elements on an insulating substrate (2). At least one of the plurality of transistor elements is an oxide TFT (10) including, as a channel layer (11), an oxide semiconductor. At least one of the plurality of transistor elements is an a-SiTFT (20) (i) being different from the oxide TFT (10) in functions as circuit components and (ii) including, as a channel layer (21), an amorphous silicon semiconductor. The oxide TFT (10) is a top gate transistor, and the a-SiTFT (20) is a bottom gate transistor. This provides: a configuration that can (a) enhance the performance of the circuit board equipped with the TFTs differing in their respective functions as circuit components and (b) reduce the area necessary for mounting the TFTs; and a method for producing the circuit board.

Abstract: A distance (d1) from an edge of a first region (R) at places (D) where branch electrodes (4b) extending, which branch off from an electrode line (4a) of a second source/drain electrode (4), start to overlap with a first region (R) to the electrode line (4a) is 5 ?m or more. This realizes a TFT including a comb-shaped source/drain structure that enables easy repair of a source-drain leakage.

Abstract: In at least one embodiment, a TFT includes: a first capacitor formed of a first capacitor electrode connected to a source electrode and a second capacitor electrode; a second capacitor formed of a third capacitor electrode and a fourth capacitor electrode; a first lead-out line; a second lead-out line connected to a gate electrode; a third lead-out line; a fourth lead-out line; a first interconnection; and a second interconnection. This realizes a TFT which can be easily saved from being a defective product even if leakage occurs in a capacitor connected to a TFT body section.

Abstract: A source and drain electrode layer (3s/3d) of an oxide TFT element (3) is formed by a first conductive layer. A gate electrode (3g) of the oxide TFT element (3) and a gate electrode (5g) of an a-Si TFT element (5) are formed by a single conductive layer, that is, a second conductive layer. A source and drain electrode layer (5s/5d) of the a-Si TFT element (5) is formed by a third conductive layer. The third conductive layer is formed above the second conductive layer in a thickness direction in which each conductive layer is stacked on an insulating substrate (2). Further, the first conductive layer is formed below the second conductive layer in the thickness direction. Therefore, it is possible to provide a circuit board that can have an improved degree of integration of transistor elements formed on the insulating substrate.

Abstract: A display panel of an organic EL display device includes a photo-detection section that detects reflected light when a screen is touched by a finger or the like. The photo-detection section includes a photodiode that receives the reflected light, and an output amplifier that outputs an output voltage corresponding to the amount of the received light. If an a-Si diode is used for such a photodiode, a sufficiently large signal difference between the bright state and the dark state can be achieved. Also, if a p-Si amplifier is used for the output amplifier, the output voltage becomes the saturation voltage at the time of read-out. This allows the p-Si amplifier to directly output the large difference detected by the a-Si diode as a large difference in the output voltage.

Abstract: A display device includes: an optical sensor circuit provided in a display region, the optical sensor circuit including a light-receiving element and detecting intensity of light incident to the light-receiving element; and a pressure detection circuit which detects pressure applied to a display surface of a display panel on a basis of a change of the display surface in a panel thickness direction which change is caused by the pressure, with respect to a region in which the pressure is to be detected, both of the detection of the pressure by the pressure detection circuit and the detection of the intensity of the light by the optical sensor circuit being carried out within a period allocated to acquisition of detection data concerning the pressure in the display region.

Abstract: Transflective-type and reflection type liquid crystal display devices having a high image quality are provided with a good production efficiency. A liquid crystal display device according to the present invention is a liquid crystal display device which includes; a first substrate and a second substrate between which liquid crystal is interposed; a first electrode and a second electrode formed on the first substrate for applying a voltage for controlling an orientation of the liquid crystal; a transistor having an electrode which is electrically connected to the first electrode; a metal layer being formed on the first substrate and including a protrusion, a recess, or an aperture; and a reflective layer formed above the metal layer on the first substrate for reflecting incident light toward a display surface. The metal layer is made of a same material as that of a gate electrode of the transistor.

Abstract: A matrix type display device including: a photosensor, provided in a display region, for outputting a signal corresponding to an intensity of light emitted to the photosensor; a TFT of n-channel type, the TFT serving as a source follower including a gate to which the signal is inputted; and light intensity detecting means for detecting the intensity of the light by detecting an output of the source follower, which is the TFT. In at least one embodiment, the TFT includes a drain to which a first pulse signal (Vpulse2) having a first pulse is inputted, the first pulse rising from a low level to a high level in a state where the signal is inputted to the gate of the TFT.

Abstract: The circuit board (1) of the present invention includes a plurality of transistor elements provided on a single insulating substrate (2) for respective pixels that are two-dimensionally arranged or respective pixels in a group of a predetermined number of the pixels. At least one of the plurality of transistor elements is an oxide TFT (10) having a channel layer (11) formed by an oxide semiconductor, and at least another of the plurality of transistor elements is an a-Si TFT (20) having a channel layer (21) formed by, for example, an amorphous silicon semiconductor. Each of the oxide TFT (10) and the a-Si TFT (20) is a bottom-gate transistor.

Abstract: A display device according to the present invention includes a liquid crystal display panel in which a plurality of pixels are arranged in matrix, and an optical sensor circuit configured by a photodiode (17), a NetA voltage-boosting capacitor, and an output AMP. A driving wiring (Vrwn) for supplying a driving signal to the NetA voltage-boosting capacitor is electrically connected to a power supply wiring (Vsm) for supplying power to the output AMP. This configuration reduces parasitic capacitance resulting from an increase in the number of wirings. This makes it possible to make a display device having a pixel including an optical sensor incorporated therein, the display device capable of avoiding deterioration in sensor accuracy in the optical sensor circuit and preventing a decrease in the aperture ratio of the pixel.

Abstract: A source and drain electrode layer (3s/3d) of an oxide TFT element (3) is formed by a first conductive layer. A gate electrode (3g) of the oxide TFT element (3) and a gate electrode (5g) of an a-Si TFT element (5) are formed by a single conductive layer, that is, a second conductive layer. A source and drain electrode layer (5s/5d) of the a-Si TFT element (5) is formed by a third conductive layer. The third conductive layer is formed above the second conductive layer in a thickness direction in which each conductive layer is stacked on an insulating substrate (2). Further, the first conductive layer is formed below the second conductive layer in the thickness direction. Therefore, it is possible to provide a circuit board that can have an improved degree of integration of transistor elements formed on the insulating substrate.

Abstract: A circuit board (1) includes a plurality of transistor elements on an insulating substrate (2). At least one of the plurality of transistor elements is an oxide TFT (10) including, as a channel layer (11), an oxide semiconductor. At least one of the plurality of transistor elements is an a-SiTFT (20) (i) being different from the oxide TFT (10) in functions as circuit components and (ii) including, as a channel layer (21), an amorphous silicon semiconductor. The oxide TFT (10) is a top gate transistor, and the a-SiTFT (20) is a bottom gate transistor. This provides: a configuration that can (a) enhance the performance of the circuit board equipped with the TFTs differing in their respective functions as circuit components and (b) reduce the area necessary for mounting the TFTs; and a method for producing the circuit board.

Abstract: A display apparatus of the present invention includes display sections (100) and sensor circuit sections (200). A driver line RW for supplying power to a charge storage element (202) in the sensor circuit section (200) is provided so as to overlap, via an interlayer insulating film, a gate line G connected with a gate electrode (102) of a display-drive TFT element (101) in the display section (100). This makes it possible to realize a display apparatus having pixels in which optical sensors are provided which display apparatus makes it possible to suppress a decrease in aperture ratio which is caused by the provision of the sensor circuit sections, and reduce a parasitic capacitance between lines so as to increase a sensitivity of the optical sensors.

Abstract: The circuit board (1) of the present invention includes a plurality of transistor elements provided on a single insulating substrate (2) for respective pixels that are two-dimensionally arranged or respective pixels in a group of a predetermined number of the pixels. At least one of the plurality of transistor elements is an oxide TFT (10) having a channel layer (11) formed by an oxide semiconductor, and at least another of the plurality of transistor elements is an a-Si TFT (20) having a channel layer (21) formed by, for example, an amorphous silicon semiconductor. Each of the oxide TFT (10) and the a-Si TFT (20) is a bottom-gate transistor.

Abstract: Transflective-type and reflection-type liquid crystal display devices having a high image quality are provided at low cost. A liquid crystal display device according to the present invention is a liquid crystal display device having a reflection region for reflecting incident light toward a display surface, the reflection region including a Cs metal layer (metal layer), a gate insulating layer formed on the Cs metal layer, a semiconductor layer formed on the gate insulating layer, and a reflective layer formed on the semiconductor layer. On the surface of the reflective layer, a first recess and a second recess located inside the first recess are formed. The Cs metal layer and the semiconductor layer each have an aperture, and one of the first recess and the second recess is constituted by the aperture of the Cs metal layer, and the other is constituted by the aperture of the semiconductor layer.

Abstract: A liquid crystal display device has a plurality of pixels and a reflection section for reflecting incident light toward a display surface. The reflection section includes a metal layer having a plurality of apertures, and a reflective layer formed on the metal layer with an insulating layer interposed therebetween. A surface of the reflective layer includes a plurality of recesses or protrusions formed in accordance with a cross-sectional shape of the metal layer.

Abstract: A liquid crystal display device according to the present invention includes a vertical alignment type liquid crystal layer 32. Each pixel electrode thereof 12 has a plurality of unit electrode portions 12a, each of which has a conductive film and slits 13 that have been cut through the conductive film. When a predetermined voltage is applied between the pixel electrode and a counter electrode, a liquid crystal domain is produced in association with each unit electrode portion and liquid crystal molecules in the liquid crystal domain come to have a substantially radially tilting alignment state. As a result, the device of the present invention achieves a wide viewing angle and a fast response characteristic.

Abstract: A liquid crystal display device, which can be a transflective-type or a reflection-type, includes a reflection section arranged to reflect incident light toward a display surface, wherein the reflection section includes a reflective layer provided on a substrate, and includes a first recess formed in a surface of the reflective layer and a second recess formed in the surface of the reflective layer in the first recess. The first recess corresponds to an aperture of a Cs metal layer, and the second recess corresponds to an aperture of a semiconductor layer. The transflective-type or reflection-type liquid crystal display device has a high image quality at low cost.

Abstract: A liquid crystal display device includes a reflection region for reflecting incident light toward a display surface, wherein, the reflection region includes a metal layer formed on a substrate, a semiconductor layer formed above the metal layer, and a reflective layer formed above the semiconductor layer; and the reflection region includes a first recess formed on a surface of the reflective layer, a second recess formed on the surface of the reflective layer in the first recess, and a third recess formed on the surface of the reflective layer in the second recess. The liquid crystal display device provides a low-cost transflective-type or reflection-type liquid crystal display device having a high image quality.