Abstract: To improve the efficiency of generation of chromatic aberrations of an energy filter for reducing energy distribution. Mounted are an energy filter for primary electrons, the energy filter having a beam slit and a pair of a magnetic deflector and an electrostatic deflector that are superimposed with each other. An electron lens is arranged between the beam slit and the pair of the magnetic deflector and the electrostatic deflector.

Abstract: An embodiment is to provide a technique that continuously applies a certain amount of an electron beam to a sample by selecting a beam applied to the sample from an electron beam emitted from an electron source in a scanning electron microscope. A charged particle apparatus is configured, including: a mechanism that detects the distribution of electric current strength with respect to the emitting direction of an electron beam emitted from an electron source; a functionality that predicts a fluctuation of an electric current applied to a sample by predicting the distribution of the electric current based on the detected result; a functionality that determines a position at which a beam applied to the sample is acquired based on the predicted result; and a mechanism that controls a position at which a probe beam is acquired based on the determined result.

Abstract: The image processing device has: a scanning direction decision unit which divides an captured image into a plurality of scanning regions and deciding a scanning direction of each scanning region based on a pattern edge captured in each scanning region in the captured image, a scanning order decision unit which performs a raster scan per pixel constituting each scanning region such that the scanning direction of each of the decided scanning region is directed to a horizontal direction of the raster scan, and a scanning image acquisition unit which acquires a scanning image by capturing each scanning region by the scanning-electron-microscope based on the decided scanning order.

Abstract: A scanning electron beam device having: a deflector (5) for deflecting an electron beam (17) emitted from an electron source (1); an objective lens (7) for causing the electron beam to converge; a retarding electrode; a stage (9) for placing a wafer (16); and a controller (15); wherein the stage can be raised and lowered. In the low acceleration voltage region, the controller performs rough adjustment and fine adjustment of the focus in relation to the variation in the height of the wafer using electromagnetic focusing performed through excitation current adjustment of the objective lens. In the high acceleration voltage region, the controller performs rough adjustment of the focus in relation to the variation in the height of the wafer by mechanical focusing performed through raising and lowering of the stage, and performs fine adjustment by electrostatic focusing performed through adjustment of the retarding voltage.

Abstract: Technique capable of achieving shortening of settling time, which is caused by ringing, etc. of a blanking control signal is provided. A measuring/inspecting apparatus is configured to have a main blanking unit and a correction blanking control unit as a high-speed switching control unit of an electron beam. During the period of switching of a main blanking control signal from ON to OFF, a correction blanking control signal is applied in real time in synchronization with the switching. The ringing caused by the main blanking are corrected so as to be cancelled out by that, the settling time is shortened as a result.

Abstract: In an SEM provided with an ExB deflector for deflecting secondary electrons outside an optical axis of a primary electron beam between an electronic source and an object lens for condensing the primary electron beam and irradiating a sample with the beam, a unit to decelerate the secondary electrons deflected in the ExB deflector, and a magnetic generator for deflecting the decelerated secondary electron are provided, and a plurality of energy filters and detectors are arranged around the magnetic generator. That is, by separating loci of the secondary electrons incident on the energy filters and of the secondary electrons reflected at the energy filters by the magnetic generator, both of the secondary electrons are concurrently detected.

Abstract: A metallic shell extends in the direction of an axial line and has a threaded portion on its outer circumferential surface for threading engagement with a mounting hole of a combustion apparatus. A process of manufacturing the metallic shell includes a step of forming a metallic shell tubular intermediate having the first tubular portion and the second tubular portion and a rolling step of forming the threaded portion on the metallic shell tubular intermediate. In the rolling step, a bearing member is inserted into the metallic shell tubular intermediate for nipping the metallic shell tubular intermediate in cooperation with working surfaces of the rolling dies, and rolling is performed simultaneously on at least the first tubular portion and the second tubular portion.

Abstract: The present invention has for its object to provide an electron beam irradiation apparatus which can suppress influences the electric fields generated by a plurality of backscattered electron detectors have. To attain the above object, an electron beam irradiation apparatus equipped with, a scanning deflector comprises a plurality of backscattered electron detectors, a power source for detectors which applies voltages to the plural backscattered electron detectors, respectively, and a controller device which adjusts application voltages the power source for detectors delivers, on the basis of an image shift when the voltages are applied to the plural backscattered electron detectors.

Abstract: The present invention has for its object to provide an electron beam irradiation apparatus which can suppress influences the electric fields generated by a plurality of backscattered electron detectors have. To attain the above object, an electron beam irradiation apparatus equipped with a scanning deflector comprises a plurality of backscattered electron detectors, a power source for detectors which applies voltages to the plural backscattered electron detectors, respectively, and a controller device which adjusts application voltages the power source for detectors delivers, on the basis of an image shift when the voltages are applied to the plural backscattered electron detectors.

Abstract: Technique capable of achieving shortening of settling time, which is caused by ringing, etc. of a blanking control signal is provided. A measuring/inspecting apparatus is configured to have a main blanking unit and a correction blanking control unit as a high-speed switching control unit of an electron beam. During the period of switching of a main blanking control signal from ON to OFF, a correction blanking control signal is applied in real time in synchronization with the switching. The ringing, etc. caused by the main blanking are corrected so as to be cancelled out by that, the settling time is shortened as a result.

Abstract: The present invention has for its object to provide an electron beam irradiation apparatus which can suppress influences the electric fields generated by a plurality of backscattered electron detectors have. To attain the above object, an electron beam irradiation apparatus equipped with a scanning deflector comprises a plurality of backscattered electron detectors, a power source for detectors which applies voltages to the plural backscattered electron detectors, respectively, and a controller device which adjusts application voltages the power source for detectors delivers, on the basis of an image shift when the voltages are applied to the plural backscattered electron detectors.

Abstract: The present invention has an object to provide a scanning electron microscope which suppresses a potential gradient produced by preliminary charge without changing lens conditions of an electron microscope. As an aspect to achieve the above object, there is proposed a scanning electron microscope in which a scanning deflector is controlled so that a second beam is scanned to detect electrons released from a sample after scanning a first beam on the sample to charge the surface of the sample and the first beam is scanned so that charge density in a surrounding part within a scanned area by the first beam is increased relatively as compared with a center part within the scanned area by the first beam.

Abstract: A transfer robot for accommodating and transferring a transferred object has a transfer route storage section, a movement mechanism section, and a security level setting section. The transfer route storage section stores a transfer route having been set up at least on the basis of transfer destination information for the transferred object. The movement mechanism section causes the transfer robot to move toward a transfer destination on the basis of the transfer route. The security level setting section switches a security level of the transfer robot under movement on the basis of a zone level defined beforehand by each region in the transfer route, present position information of the transfer robot, and type information of the transferred object.

Abstract: An exemplary a charged particle beam apparatus converts an inspection position on a test sample (wafer coordinate system) to a setting position of an inspection mechanism (stage coordinate system (polar coordinate system)), a rotating arm and a rotating stage being rotated to be moved for the inspection position on the test sample. In this case, inspection devices are arranged over a locus that is drawn by the center of the rotating stage according to the rotation of the rotating arm. A function for calculating errors (e.g., center shift of the rotating stage) and compensating for the errors is provided, by which the precision of inspection is improved in a charged particle beam apparatus equipped with a biaxial rotating stage mechanism.

Abstract: According to a charged particle beam apparatus of this invention, an inspection position on a test sample (wafer coordinate system) is converted to a setting position of an inspection mechanism (stage coordinate system (polar coordinate system)), a rotating arm (102,1012) and a rotating stage (103,1011) being rotated to be moved for the inspection position on the test sample. In this case, a plurality of inspection devices are arranged over a locus that is drawn by the center of the rotating stage according to the rotation of the rotating arm. A function for calculating errors (e.g., center shift of the rotating stage) and compensating for the errors is provided, by which the precision of inspection is improved in a charged particle beam apparatus equipped with a biaxial rotating stage mechanism. With this configuration, a charged particle beam apparatus which is small-sized and capable of easy stage control can be realized.

Abstract: An obstacle avoidance method for mobile apparatus includes the steps of acquiring, by a mobile apparatus, information as to relative movement of an obstacle with respect to the mobile apparatus, calculating a travel path and a travel direction of the obstacle based on the information during its relative movement, setting a non-intrusion area having a configuration which is longer in the travel direction of the obstacle than in a direction perpendicular to the travel direction, and performing such travel control on the mobile apparatus as to avoid the non-intrusion area, by which obstacle avoidance operation is fulfilled. Thus, an obstacle avoidance method as well as an obstacle-avoidable mobile apparatus are provided which are capable of not only reducing collisions against obstacles and repetitions of avoidance operation, but also preventing impartment of uneasiness and oppression to persons in the obstacle avoidance operation for mobile apparatuses such as robots.