Abstract: A terminal insertion device includes a chuck gripping a terminal, a housing holder holding a housing, an imaging unit to capture an image of the housing, a driving mechanism and a control unit. The control unit measures a distance from a reference point of a field of view of the imaging unit to a positioning target portion in the field of view based on an image obtained, measures a movement amount of a gripping point of the chuck when a measurement pin gripped by the chuck is aligned with the positioning target portion, calculates a reference distance between the gripping point and the reference point based on the distance and the movement amount, captures an image to identify a position of a cavity of the housing, drives the driving mechanism based on the calculated reference distance, and aligns and inserts the terminal into the identified cavity.

Abstract: A terminal insertion method includes a reference position setting process of capturing an image of a subject for reference position measurement gripped by the chuck and setting a reference position based on a captured image, a posture correction process of capturing an image of the terminal gripped by the chuck, obtaining an inclination of the terminal for a specific part of the terminal in the captured image, and correcting a posture of the terminal, a terminal position calculation process of capturing again the image of the terminal whose posture is corrected and calculating a position of the terminal based on the captured image, and an insertion process of correcting the position of the terminal using a difference between a calculated measurement position of the terminal and the reference position as a correction value and inserting the terminal into the cavity of the housing.

Abstract: A terminal insertion device inserts a terminal connected to an electric wire into a cavity of a housing. The terminal insertion device includes a rear chuck portion to grip the electric wire, a front chuck portion to grip the electric wire at a position closer to the terminal than is the rear chuck portion, the front chuck portion being movable toward and away from the rear chuck portion along an extending direction of the electric wire, a driving mechanism to advance and retreat the rear chuck portion and the front chuck portion relative to the housing, and a control part to control the rear chuck portion, the front chuck portion, and the drive mechanism. The control unit causes the terminal insertion device to execute an electric wire gripping operation, a sliding operation, an insertion operation, a switching operation and a reinsertion operation.

Abstract: A wire harness manufacturing system includes an assembly line that manufactures a wire harness and one or a plurality of supply devices that prepares to supply component magazines in which components of the wire harness are loaded in a holder to the assembly line. Each of the supply devices is capable of preparing a plurality of the component magazines which are different according to types of the components. The component magazines are capable of delivering from the supply devices to at least a part of the series of assembly steps in a state of being independent of both the assembly line and the supply device.

Abstract: According to the embodiment, a vaporization system includes a vaporizer, a body, a sensor, a moving mechanism, and a supplier. The vaporizer includes a plurality of containers which can store powdered solid materials. The body in a vacuum state can house the vaporizer. The sensor detects a residue of the solid materials stored in a plurality of the containers respectively. The moving mechanism, on the basis of a detection result of the sensor, moves the plurality of the containers respectively between a first position located inside the vaporizer, and a second position located outside of the vaporizer. A supplier supplies the solid material to the container located in the second position among the plurality of the containers.

Abstract: According to one embodiment, the silicon layer includes phosphorus. The buried layer is provided on the silicon layer. The stacked body is provided on the buried layer. The stacked body includes a plurality of electrode layers stacked with an insulator interposed. The semiconductor body extends in a stacking direction of the stacked body through the stacked body and through the buried layer, and includes a sidewall portion positioned at a side of the buried layer. The silicon film is provided between the buried layer and the sidewall portion of the semiconductor body. The silicon film includes silicon as a major component and further includes at least one of germanium or carbon.

Abstract: According to one embodiment, the silicon layer includes phosphorus. The buried layer is provided on the silicon layer. The stacked body is provided on the buried layer. The stacked body includes a plurality of electrode layers stacked with an insulator interposed. The semiconductor body extends in a stacking direction of the stacked body through the stacked body and through the buried layer, and includes a sidewall portion positioned at a side of the buried layer. The silicon film is provided between the buried layer and the sidewall portion of the semiconductor body. The silicon film includes silicon as a major component and further includes at least one of germanium or carbon.

Abstract: A wire harness manufacturing system includes an assembly line that manufactures a wire harness and one or a plurality of supply devices that prepares to supply component magazines in which components of the wire harness are loaded in a holder to the assembly line. Each of the supply devices is capable of preparing a plurality of the component magazines which are different according to types of the components. The component magazines are capable of delivering from the supply devices to at least a part of the series of assembly steps in a state of being independent of both the assembly line and the supply device.

Abstract: According to one embodiment, a semiconductor device includes a foundation layer, a stacked body provided on the foundation layer, the stacked body including a plurality of electrode layers stacked with an insulator interposed, a semiconductor body extending through the stacked body in a stacking direction of the stacked body, and a charge storage portion provided between the semiconductor body and the electrode layers. The semiconductor body includes a first semiconductor film, and a second semiconductor film provided between the first semiconductor film and the charge storage portion. An average grain size of a crystal of the second semiconductor film is larger than an average grain size of a crystal of the first semiconductor film.

Abstract: According to some embodiments, a semiconductor manufacturing apparatus includes a first boat and a second boat, each of the first boat and the second boat having two support rings respectively provided at a top end and a bottom end thereof and a plurality of pillars provided between the top support ring and bottom support ring and spaced apart from one another. The pillar is provided with support protrusions on which a semiconductor substrate can be placed, and vertical positions of upper surfaces of the support protrusions of the second boat are lower than positions of upper surfaces of the support protrusions of the first boat. The semiconductor apparatus is configured to lift the second boat such that the positions of the upper surfaces of the support protrusions provided in the second boat are positioned above the positions of the upper surfaces of the support protrusions provided in the first boat.

Abstract: According to some embodiments, a semiconductor manufacturing apparatus includes a first boat and a second boat, each of the first boat and the second boat having two support rings respectively provided at a top end and a bottom end thereof and a plurality of pillars provided between the top support ring and bottom support ring and spaced apart from one another. The pillar is provided with support protrusions on which a semiconductor substrate can be placed, and vertical positions of upper surfaces of the support protrusions of the second boat are lower than positions of upper surfaces of the support protrusions of the first boat. The semiconductor apparatus is configured to lift the second boat such that the positions of the upper surfaces of the support protrusions provided in the second boat are positioned above the positions of the upper surfaces of the support protrusions provided in the first boat.

Abstract: According to one embodiment, a semiconductor device includes a foundation layer, a stacked body provided on the foundation layer, the stacked body including a plurality of electrode layers stacked with an insulator interposed, a semiconductor body extending through the stacked body in a stacking direction of the stacked body, and a charge storage portion provided between the semiconductor body and the electrode layers. The semiconductor body includes a first semiconductor film, and a second semiconductor film provided between the first semiconductor film and the charge storage portion. An average grain size of a crystal of the second semiconductor film is larger than an average grain size of a crystal of the first semiconductor film.

Abstract: A semiconductor manufacturing apparatus according to an embodiment includes a chamber that is capable of accommodating therein a plurality of semiconductor substrates. A gas supply part supplies process gas to the chamber. A top exhaust port is connected to a top portion of the chamber and exhausts gas within the chamber. A bottom exhaust port is connected to a bottom portion of the chamber and exhausts gas within the chamber. A controller controls a timing of supplying process gas from the gas supply part and a timing of switching between exhaust from the top exhaust port and exhaust from the bottom exhaust port.

Abstract: A semiconductor manufacturing apparatus according to an embodiment comprises a reaction chamber in which a semiconductor substrate is capable of being accommodated when a deposited film is to be formed on a surface of the semiconductor substrate. A first supplier supplies a source gas to a first area in the reaction chamber. A second supplier supplies an oxidation gas to a second area in the reaction chamber. A third supplier supplies a hydrogen gas to a third area between the first area and the second area in the reaction chamber. A stage moves the semiconductor substrate to any one of the first to third areas.

Abstract: According to the embodiment, a vaporization system includes a vaporizer, a body, a sensor, a moving mechanism, and a supplier. The vaporizer includes a plurality of containers which can store powdered solid materials. The body in a vacuum state can house the vaporizer. The sensor detects a residue of the solid materials stored in a plurality of the containers respectively. The moving mechanism, on the basis of a detection result of the sensor, moves the plurality of the containers respectively between a first position located inside the vaporizer, and a second position located outside of the vaporizer. A supplier supplies the solid material to the container located in the second position among the plurality of the containers.

Abstract: According to an embodiment, a semiconductor memory device includes first and second stacked bodies, first and second memory parts, and an insulating part. The first stacked body includes first conductive layers and first insulating layers alternately arranged in a first direction. The second stacked body includes second conductive layers and second insulating layers alternately arranged in the first direction. The first and second memory parts extend through the first and second stacked body in the first direction, respectively. The insulating part is provided between the first and second stacked bodies. The insulating part includes a first oxygen-containing film including silicon and oxygen, and a nitrogen-containing film including silicon and nitrogen. The first oxygen-containing film is provided between at least one of first conductive layers and the nitrogen-containing film. The first oxygen-containing film has a hole.

Abstract: According to an embodiment, a semiconductor memory device includes first and second stacked bodies, first and second memory parts, and an insulating part. The first stacked body includes first conductive layers and first insulating layers alternately arranged in a first direction. The second stacked body includes second conductive layers and second insulating layers alternately arranged in the first direction. The first and second memory parts extend through the first and second stacked body in the first direction, respectively. The insulating part is provided between the first and second stacked bodies. The insulating part includes a first oxygen-containing film including silicon and oxygen, and a nitrogen-containing film including silicon and nitrogen. The first oxygen-containing film is provided between at least one of first conductive layers and the nitrogen-containing film. The first oxygen-containing film has a hole.

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes an accommodation module configured to accommodate a substrate. The apparatus further includes a first flow channel including first openings configured to emit a first gas into the accommodation module. The apparatus further includes a second flow channel including second openings configured to emit the first gas into the accommodation module, a number or a size of the second openings being different from a number or a size of the first openings. The apparatus further includes a controller configured to control supplying of the first gas to the first and second flow channels such that the first gas is emitted from the first openings at a first flow velocity and the first gas is emitted from the second openings at a second flow velocity different from the first flow velocity.

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a belt supporting module including a first portion that is provided around a first axis, a second portion that is provided around a second axis different from the first axis, a third portion connecting the first and second portions, and a fourth portion connecting the first and second portions and positioned below the third portion. The apparatus further includes a belt provided on the belt supporting module, and configured to rotate around the first axis in a first direction and rotate around the second axis in a second direction reverse to the first direction. The apparatus further includes a wafer supporting module provided on the belt and configured to support a wafer. The apparatus further includes raw material feeding heads provided above the belt and configured to feed a raw material of a film to be formed on the wafer.

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes an accommodation module configured to accommodate a substrate. The apparatus further includes a first flow channel including first openings configured to emit a first gas into the accommodation module. The apparatus further includes a second flow channel including second openings configured to emit the first gas into the accommodation module, a number or a size of the second openings being different from a number or a size of the first openings. The apparatus further includes a controller configured to control supplying of the first gas to the first and second flow channels such that the first gas is emitted from the first openings at a first flow velocity and the first gas is emitted from the second openings at a second flow velocity different from the first flow velocity.