Abstract: An embodiment of the present disclosure provides an arc risk management method comprising: pre-processing measurement values of currents flowing into an electric apparatus; estimating a level of arc energy in the electric apparatus by inputting the measurement values into one artificial intelligence network comprising a first layer including a dilated convolutional neural network and a second layer including a recurrent neural network; and indicating an arc risk to the electric apparatus in a quantitative way according to the level of arc energy.

Abstract: A semiconductor light-emitting diode (LED) package is provided and includes a semiconductor LED chip having a surface on which a first electrode and a second electrode are formed; a first solder bump formed on the first electrode and a second solder bump formed on the second electrode, the first solder bump and the second solder bump protruding from the surface of the semiconductor LED chip; and a resin layer having a bottom portion that surrounds a first side surface of the first solder bump and a second side surface of the second solder bump and covers the surface of the semiconductor LED chip.

Abstract: A semiconductor light-emitting diode (LED) package is provided and includes a semiconductor LED chip having a surface on which a first electrode and a second electrode are formed; a first solder bump formed on the first electrode and a second solder bump formed on the second electrode, the first solder bump and the second solder bump protruding from the surface of the semiconductor LED chip; and a resin layer having a bottom portion that surrounds a first side surface of the first solder bump and a second side surface of the second solder bump and covers the surface of the semiconductor LED chip.

Abstract: A semiconductor light emitting device package is provided and includes a light emitting diode (LED) chip including a first electrode and a second electrode, the LED chip having a first surface on which the first electrode and the second electrode are disposed, and a second surface opposing the first surface; a dam structure disposed on the first surface, an outside edge of the dam structure being co-planar with an outside edge of the LED chip; and a wavelength conversion layer disposed on side surfaces of the LED chip, the second surface of the LED chip, and a surface of the dam structure, the wavelength conversion layer containing a wavelength conversion material.

Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.

Abstract: A semiconductor light emitting device package is provided and includes a light emitting diode (LED) chip including a first electrode and a second electrode, the LED chip having a first surface on which the first electrode and the second electrode are disposed, and a second surface opposing the first surface; a dam structure disposed on the first surface, an outside edge of the dam structure being co-planar with an outside edge of the LED chip; and a wavelength conversion layer disposed on side surfaces of the LED chip, the second surface of the LED chip, and a surface of the dam structure, the wavelength conversion layer containing a wavelength conversion material.

Abstract: A semiconductor light emitting device package is provided and includes a light emitting diode (LED) chip including a first electrode and a second electrode, the LED chip having a first surface on which the first electrode and the second electrode are disposed, and a second surface opposing the first surface; a dam structure disposed on the first surface, an outside edge of the dam structure being co-planar with an outside edge of the LED chip; and a wavelength conversion layer disposed on side surfaces of the LED chip, the second surface of the LED chip, and a surface of the dam structure, the wavelength conversion layer containing a wavelength conversion material.

Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.

Abstract: An LED package includes a substrate, a light-emitting structure provided on the substrate, an electrode structure provided on the light-emitting structure, and an external connection terminal provided on the electrode structure, the external connection terminal comprising a major axis and a minor axis. The major axis of the external connection terminal is perpendicular to a cleaving plane of the substrate.

Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.

Abstract: A semiconductor light emitting device package is provided and includes a light emitting diode (LED) chip including a first electrode and a second electrode, the LED chip having a first surface on which the first electrode and the second electrode are disposed, and a second surface opposing the first surface; a dam structure disposed on the first surface, an outside edge of the dam structure being co-planar with an outside edge of the LED chip; and a wavelength conversion layer disposed on side surfaces of the LED chip, the second surface of the LED chip, and a surface of the dam structure, the wavelength conversion layer containing a wavelength conversion material.

Abstract: An LED package includes a substrate, a light-emitting structure provided on the substrate, an electrode structure provided on the light-emitting structure, and an external connection terminal provided on the electrode structure, the external connection terminal comprising a major axis and a minor axis. The major axis of the external connection terminal is perpendicular to a cleaving plane of the substrate.

Abstract: There is provided an electronic device package including an electronic device including a first electrode and a second electrode disposed on a surface thereof, a package substrate having a first surface having the electronic device mounted thereon and a second surface opposed to the first surface. The package substrate includes a first electrode pattern and a second electrode pattern electrically connected to the first electrode and the second electrode on the first surface, respectively. The package substrate further includes at least one via hole disposed outside of a region for mounting the electronic device and an irregular portion disposed on the first surface to be adjacent to the via hole.

Abstract: A method of manufacturing a semiconductor light emitting device package includes providing a wafer and forming, on the wafer, a semiconductor laminate comprising a plurality of light emitting devices. Electrodes are formed in respective light emitting device regions of the semiconductor laminate. A curable resin is applied to a surface of the semiconductor laminate on which the electrodes are formed. A support structure is formed for supporting the semiconductor laminate by curing the curable resin. Through holes are formed in the support structure to expose the electrodes therethrough. Connection electrodes are formed in the support structure to be connected to the exposed electrodes.

Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.

Abstract: A bump manufacturing method may be provided. The bump manufacturing method may include forming a bump on an electrode pad included in a semiconductor device, and controlling a shape of the bump by reflowing the bump formed on the semiconductor device under an oxygen atmosphere.

Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.

Abstract: There are provided a light emitting diode (LED) package including a heat slug to have excellent heat dissipation efficiency and a manufacturing method thereof, the LED package including: a lead frame receiving power supplied thereto; an LED chip electrically connected to the lead frame; a heat slug provided with a mounting part having the LED chip mounted thereon and outwardly discharging heat generated by the LED chip; and a body part covering at least a portion of an outer circumferential surface of the heat slug, wherein at least a portion of a circumferential region of the body part has higher heat resistance than that of an internal region thereof.

Abstract: A manufacturing method of a light emitting diode (LED) and a manufacturing method of an LED module are provided. The manufacturing method of the LED may include manufacturing a plurality of LED chips, manufacturing a phosphor pre-form including a plurality of mounting areas for mounting the plurality of LED chips, applying an adhesive inside the phosphor pre-form, mounting each of the plurality of LED chips in each of the plurality of mounting areas, and cutting the phosphor pre-form to which the plurality of LED chips are mounted, into units including individual LED chips.

Abstract: Provided are a light emitting device package and a method of fabricating the same. The package includes a package body including a lead frame, a light emitting device mounted on the package body, a bonding wire configured to electrically connect an electrode formed on a top surface of the light emitting device with the lead frame, a phosphor sheet attached on the light emitting device, and a phosphor molding portion to cover the light emitting device and the phosphor sheet.