Patents by Inventor Hak-Hwan Kim
Hak-Hwan Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20150236224Abstract: Provided are a light emitting device package and a method of fabricating the same. The package includes a package body including a lead frame, a light emitting device mounted on the package body, a bonding wire configured to electrically connect an electrode formed on a top surface of the light emitting device with the lead frame, a phosphor sheet attached on the light emitting device, and a phosphor molding portion to cover the light emitting device and the phosphor sheet.Type: ApplicationFiled: January 28, 2015Publication date: August 20, 2015Inventors: Chang-Hoon KWAK, Hak-Hwan KIM, Byung-Kwon YOON, Hyo-Jin LEE, Han-Na HEO
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Patent number: 9099631Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.Type: GrantFiled: January 9, 2015Date of Patent: August 4, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jong-In Yang, Tae-Hyung Kim, Si-Hyuk Lee, Sang-Yeob Song, Cheol-Soo Sone, Hak-Hwan Kim, Jin-Hyun Lee
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Publication number: 20150125983Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.Type: ApplicationFiled: January 9, 2015Publication date: May 7, 2015Inventors: Jong-In YANG, Tae-Hyung KIM, Si-Hyuk LEE, Sang-Yeob SONG, Cheol-Soo SONE, Hak-Hwan KIM, Jin-Hyun LEE
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Publication number: 20150115281Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.Type: ApplicationFiled: January 9, 2015Publication date: April 30, 2015Inventors: Jong-In YANG, Tae-Hyung KIM, Si-Hyuk LEE, Sang-Yeob SONG, Cheol-Soo SONE, Hak-Hwan KIM, Jin-Hyun LEE
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Patent number: 8975655Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.Type: GrantFiled: September 10, 2014Date of Patent: March 10, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Jong-In Yang, Tae-Hyung Kim, Si-Hyuk Lee, Sang-Yeob Song, Cheol-Soo Sone, Hak-Hwan Kim, Jin-Hyun Lee
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Publication number: 20150060925Abstract: Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a substrate; a light emitting structure disposed on the substrate and having a stack structure in which a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer are stacked; a lens disposed on the light emitting structure; and a first terminal portion and a second terminal portion electrically connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively. At least one of the first and second terminal portions extends from a top surface of the light emitting structure along respective side surfaces of the light emitting structure and the substrate.Type: ApplicationFiled: November 4, 2014Publication date: March 5, 2015Inventors: Hak Hwan KIM, Ho Sun PAEK, Hyung Kun KIM, Sung Kyong OH, Jong In YANG
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Patent number: 8960984Abstract: A backlight unit (BLU) is disclosed. The BLU may include a light emitting diode (LED) module including at least one LED chip mounted on a substrate in a chip-on-board (COB) type, and a light guide panel including an incidence surface configured to receive light emitted from an emission surface of the LED chip and to include at least one insertion recess disposed corresponding to the LED chip, such that the LED chip is bonded to the LED module to be inserted in the insertion recess.Type: GrantFiled: August 24, 2012Date of Patent: February 24, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung Mi Moon, Hak Hwan Kim
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Publication number: 20140377894Abstract: A method of manufacturing a semiconductor light emitting device package includes providing a wafer and forming, on the wafer, a semiconductor laminate comprising a plurality of light emitting devices. Electrodes are formed in respective light emitting device regions of the semiconductor laminate. A curable resin is applied to a surface of the semiconductor laminate on which the electrodes are formed. A support structure is formed for supporting the semiconductor laminate by curing the curable resin. Through holes are formed in the support structure to expose the electrodes therethrough. Connection electrodes are formed in the support structure to be connected to the exposed electrodes.Type: ApplicationFiled: June 5, 2014Publication date: December 25, 2014Inventors: Yong Min KWON, Jung Jin KIM, Hak Hwan KIM, Sung Jun IM
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Publication number: 20140374772Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.Type: ApplicationFiled: September 10, 2014Publication date: December 25, 2014Inventors: Jong-In YANG, Tae-Hyung KIM, Si-Hyuk LEE, Sang-Yeob SONG, Cheol-Soo SONE, Hak-Hwan KIM, Jin-Hyun LEE
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Patent number: 8901586Abstract: Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a substrate; a light emitting structure disposed on the substrate and having a stack structure in which a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer are stacked; a lens disposed on the light emitting structure; and a first terminal portion and a second terminal portion electrically connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively. At least one of the first and second terminal portions extends from a top surface of the light emitting structure along respective side surfaces of the light emitting structure and the substrate.Type: GrantFiled: July 12, 2011Date of Patent: December 2, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Hak Hwan Kim, Ho Sun Paek, Hyung Kun Kim, Sung Kyong Oh, Jong In Yang
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Publication number: 20140339581Abstract: A semiconductor light emitting device package is provided having a light transmissive substrate, and a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially laminated on the light transmissive substrate. The light emitting structure comprises a first surface and a second opposing surface facing the light transmissive substrate. The semiconductor light emitting device package comprises a via penetrating the second conductivity-type semiconductor layer and the active layer, and exposing the first conductivity-type semiconductor layer. A first electrode has a first portion disposed on the first surface, and a second portion extending into the via and contacting the first conductivity-type semiconductor layer. An insulating layer is disposed between the first electrode, and each of the second conductivity type semiconductor layer, the active layer, and the first surface.Type: ApplicationFiled: May 9, 2014Publication date: November 20, 2014Inventors: Yong Min KWON, Hak Hwan KIM, Min Young SON, Sung Jun IM
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Patent number: 8872205Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.Type: GrantFiled: July 8, 2011Date of Patent: October 28, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Jong-in Yang, Tae-hyung Kim, Si-hyuk Lee, Sang-yeob Song, Cheol-soo Sone, Hak-hwan Kim, Jin-hyun Lee
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Publication number: 20140306261Abstract: There is provided an electronic device package including an electronic device including a first electrode and a second electrode disposed on a surface thereof, a package substrate having a first surface having the electronic device mounted thereon and a second surface opposed to the first surface. The package substrate includes a first electrode pattern and a second electrode pattern electrically connected to the first electrode and the second electrode on the first surface, respectively. The package substrate further includes at least one via hole disposed outside of a region for mounting the electronic device and an irregular portion disposed on the first surface to be adjacent to the via hole.Type: ApplicationFiled: April 11, 2014Publication date: October 16, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sung Jun IM, Min Young SON, Yong Min KWON, Hak Hwan KIM
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Publication number: 20140299906Abstract: A manufacturing method of a light emitting diode (LED) and a manufacturing method of an LED module are provided. The manufacturing method of the LED may include manufacturing a plurality of LED chips, manufacturing a phosphor pre-form including a plurality of mounting areas for mounting the plurality of LED chips, applying an adhesive inside the phosphor pre-form, mounting each of the plurality of LED chips in each of the plurality of mounting areas, and cutting the phosphor pre-form to which the plurality of LED chips are mounted, into units including individual LED chips.Type: ApplicationFiled: June 20, 2014Publication date: October 9, 2014Inventors: Hak Hwan KIM, Min Jung KIM, Kyung Mi MOON, Jong Sup SONG, Jae Sung YOU, Ill Heoung CHOI, Cheol Jun YOO
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Publication number: 20140299898Abstract: A light emitting device (LED) module, and manufacturing method of the same, which may be applied to various applications is provided. The LED module may be miniaturized by directly mounting an LED and a lens unit on a substrate, and price competitiveness may be enhanced by lowering a fraction defective and increasing yield of the LED module. In a method of manufacturing an LED module, an operation may be minimized and simplified by directly mounting LEDs and a plurality of lens units having various shapes, collectively forming the plurality of lens units, and by performing the operation on a wafer level. A heat radiation characteristic may be enhanced through use of a metallic material as a substrate and a bump.Type: ApplicationFiled: June 20, 2014Publication date: October 9, 2014Inventors: Hak Hwan KIM, Kyung Mi MOON, Ho Sun PAEK, Young Hee SONG
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Patent number: 8822249Abstract: A light-emitting device and a method of manufacturing the same are provided. The light-emitting device includes a compound semiconductor structure having a first N-type compound semiconductor layer, an active layer, and a P-type compound semiconductor layer, a P-type electrode layer that is disposed on the P-type compound semiconductor layer and electrically connects with the P-type compound semiconductor layer, a plurality of insulation walls disposed at two sides of the compound semiconductor structure and the P-type electrode layer, a plurality of N-type electrode layers penetrating the plurality of insulation walls, and a conductive substrate on which a plurality of N-type electrode connecting layers respectively corresponding to a plurality of N-type electrode layers are separated from a P-type electrode connecting layer corresponding to the P-type electrode layer.Type: GrantFiled: March 30, 2012Date of Patent: September 2, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Ho-sun Paek, Hak-hwan Kim, Sung-kyong Oh
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Patent number: 8785953Abstract: A manufacturing method of a light emitting diode (LED) and a manufacturing method of an LED module are provided. The manufacturing method of the LED may include manufacturing a plurality of LED chips, manufacturing a phosphor pre-form including a plurality of mounting areas for mounting the plurality of LED chips, applying an adhesive inside the phosphor pre-form, mounting each of the plurality of LED chips in each of the plurality of mounting areas, and cutting the phosphor pre-form to which the plurality of LED chips are mounted, into units including individual LED chips.Type: GrantFiled: March 23, 2012Date of Patent: July 22, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Hak Hwan Kim, Min Jung Kim, Kyung Mi Moon, Jong Sup Song, Jae Sung You, Ill Heoung Choi, Cheol Jun Yoo
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Publication number: 20140120641Abstract: A flip chip light emitting device (LED) package and a manufacturing method thereof are provided.Type: ApplicationFiled: January 6, 2014Publication date: May 1, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kwon Joong KIM, Ho Sun PAEK, Hak Hwan KIM
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Patent number: 8536026Abstract: A method for selectively growing a nitride semiconductor, in which a mask is formed, with an opening formed therein, on a nitride semiconductor layer. A nitride semiconductor crystal is selectively grown on a portion of the nitride semiconductor layer exposed through the opening in the mask, the nitride semiconductor crystal shaped as a hexagonal pyramid and having crystal planes inclined with respect to a top surface of the nitride semiconductor. Here, the nitride semiconductor crystal has at least one intermediate stress-relieving area having crystal planes inclined at a greater angle than those of upper and lower areas of the nitride semiconductor crystal, the intermediate stress-relieving area relieving stress which occurs from continuity in the inclined crystal planes.Type: GrantFiled: July 3, 2007Date of Patent: September 17, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Hee Seok Park, Gil Han Park, Sang Duk Yoo, Young Min Park, Hak Hwan Kim, Seon Young Myoung, Sang Bum Lee, Ki Tae Park, Myoung Sik Jung, Kyeong Ik Min
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Publication number: 20130092962Abstract: A light emitting device (LED), a manufacturing method thereof, and an LED module using the same. The LED may include a first semiconductor layer, an active layer, and a second semiconductor layer formed sequentially on a light-transmitting substrate, a first electrode formed in a region exposed by removing a part of the first semiconductor layer, a second electrode formed on the second semiconductor layer, a passivation layer formed on the first electrode and the second electrode to expose a region of the first electrode and a region of the second electrode, a first bump formed in a first region including the first electrode exposed through the passivation layer, and extended to another region of the second electrode on which the passivation layer is formed, and a second bump formed in a second region including the second electrode exposed through the passivation layer.Type: ApplicationFiled: October 18, 2012Publication date: April 18, 2013Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ho Sun Paek, Hak Hwan Kim, Ill Heung Choi, Kyung Mi Moon