Abstract: Provided are a graphene preparation apparatus, including: a chamber having a space for preparation of graphene; a first electrode and a second electrode disposed in the chamber to be separated a predetermined distance from each other, the first electrode and the second electrode supporting a catalytic metal and receiving electric current for preparation of the graphene to heat the catalytic metal using Joule heating; additional heaters disposed at opposite sides of the catalytic metal, respectively, and heating the catalytic metal to compensate for a temperature difference between both end regions and a central region of the catalytic metal heated using Joule heating induced by the first electrode and the second electrode; and a current supply unit supplying electric current to the first electrode and the second electrode.

Abstract: A nanomaterial ribbon patterning method includes: forming a first nanomaterial layer having a first threshold strain on an upper surface of a substrate; forming a second nanomaterial layer on an upper surface of the first nanomaterial layer; forming a thin layer having a second threshold strain smaller than the first threshold strain on an upper surface of the second nanomaterial layer; generating plural cracks on the thin layer and the second nanomaterial layer by applying tensile force to the substrate; placing a mask on an upper surface of the thin layer; removing the mask and peeling off the sacrificial layer on the upper surface of the thin layer; and removing the sacrificial layer to form a nanomaterial ribbon pattern.

Abstract: A method for transferring a micro device, includes: a compression step in which a carrier film having a micro-device attached to an adhesive layer thereof is brought into contact with a substrate comprising a solder deposited on metal electrodes formed on the substrate and is compressed on the substrate; a first adhesive strength generation step in which the solder disposed between the micro-device and the metal electrodes is compressed in the compression step to generate first adhesive strength between the micro-device and the solder; a second adhesive generation step in which the micro-device is bonded to the adhesive layer through press-fitting in the compression step to generate second adhesive strength between the micro-device and the adhesive layer; and a release step in which the carrier film is separated from the substrate, with the micro-device adhered to the solder.

Abstract: In a meta-structure having multifunctional properties according to an exemplary embodiment of the present invention, a plurality of unit blocks controlling a property of a wave is combined on a plane or in a space in a predetermined pattern to form one structure, at least one of the plurality of unit blocks is formed to have a different size, and a frequency range of a wave controlled is changed according to the size of the unit block.

Abstract: A selective continuous transferring apparatus includes a roll and a sticking layer. The roll has an elastic surface, and contacts a source substrate with a receiving substrate to transfer elements on the source substrate to a lower surface of the receiving substrate 520. A plurality of the elements is arranged on an upper surface of the source substrate. The sticking layer has a predetermined pattern in a partial area of the lower surface of the receiving substrate. The elements are attached to the sticking layer. The roll pressurizes a series of stacked layer of the source substrate, the elements and the receiving substrate, so that the elements disposed corresponding to the sticking layer of the receiving substrate are partially and selectively transferred on the receiving substrate.

Abstract: A robot and a method for localizing a robot are disclosed. A method for location recognition of a robot includes moving in space; identifying a dot code disposed at a bottom of the space; and determining a location and direction of the robot based on the identified dot code. The dot code includes at least two reference dots arranged to indicate a reference direction. Embodiments of the present disclosure may be implemented by executing artificial intelligence algorithms and/or machine learning algorithms in a 5G environment connected for the Internet of Things.

Abstract: A carrier film according to an embodiment of the present invention comprises: a base film; and a first adhesive layer formed on a surface of the base film such that an element to be transferred is attached to the first adhesive layer, wherein the magnitude of force of adhesion between the element and the first adhesive layer is in proportion to the depth of press-fitting at which the element is press-fitted into the first adhesive layer.

Abstract: A method, an apparatus, and a system for recommending a location of a charging station of a robot are disclosed. The method includes obtaining movement path information from one or more robots in a space including a plurality of regions, determining density of each of the plurality of regions based on the obtained movement path information, and determining a recommended location of a charging station for charging the one or more robots from the plurality of regions based on the determined density. In a 5G environment connected for the Internet of things, the method for recommending a location of a charging station is implemented by executing an artificial intelligence algorithm or machine learning algorithm.

Abstract: Provided is a method of forming a thin film having a target thickness T on a substrate by an atomic layer deposition (ALD) method. The method includes n processing conditions each having a film growth rate that is different from the others, and determining a1 to an that are cycles of a first processing condition to an n-th processing condition so that a value of |T?(a1×G1+a2×G2+ . . . +an×Gn)| is less than a minimum value among G1, G2, . . . , and Gn, where n is 2 or greater integer, G1, . . . , and Gn respectively denote a first film growth rate that is a film growth rate of the first processing condition, . . . and an n-th film growth rate that is a film growth rate of the n-th processing condition, and the film growth rate denotes a thickness of a film formed per a unit cycle in each of the processing conditions. The film forming method may precisely and uniformly control a thickness of the thin film when an ALD is performed.

Abstract: A method for transferring a micro device, includes: a compression step in which a carrier film having a micro-device attached to an adhesive layer thereof is brought into contact with a substrate comprising a solder deposited on metal electrodes formed on the substrate and is compressed on the substrate; a first adhesive strength generation step in which the solder disposed between the micro-device and the metal electrodes is compressed in the compression step to generate first adhesive strength between the micro-device and the solder; a second adhesive generation step in which the micro-device is bonded to the adhesive layer through press-fitting in the compression step to generate second adhesive strength between the micro-device and the adhesive layer; and a release step in which the carrier film is separated from the substrate, with the micro-device adhered to the solder.

Abstract: An exhaust apparatus using a gas curtain instead of a mechanical opening/closing structure is provided. The exhaust apparatus includes: a first region; a second region connected to the first region; a third region connected to the first region; and a first gas line connected to the second region, wherein when gas is supplied to the first gas line, the first region does not communicate with the second region but communicates with the third region.

Abstract: A selective continuous transferring apparatus includes a roll and a sticking layer. The roll has an elastic surface, and contacts a source substrate with a receiving substrate to transfer elements on the source substrate to a lower surface of the receiving substrate 520. A plurality of the elements is arranged on an upper surface of the source substrate. The sticking layer has a predetermined pattern in a partial area of the lower surface of the receiving substrate. The elements are attached to the sticking layer. The roll pressurizes a series of stacked layer of the source substrate, the elements and the receiving substrate, so that the elements disposed corresponding to the sticking layer of the receiving substrate are partially and selectively transferred on the receiving substrate.

Abstract: An exhaust apparatus using a gas curtain instead of a mechanical opening/closing structure is provided. The exhaust apparatus includes: a first region; a second region connected to the first region; a third region connected to the first region; and a first gas line connected to the second region, wherein when gas is supplied to the first gas line, the first region does not communicate with the second region but communicates with the third region.

Abstract: In an apparatus and a method for synchronizing a roll-to-roll transfer device, the apparatus includes a thin-film, a first roller, a second roller, a first load sensing element and a control part. The thin-film is transferred by the roll-to-roll transfer device. The first roller makes contact with a lower surface of the thin-film, and rotates with a rotational axis via a first rotational element. The second roller is disposed over the first roller, makes contact with an upper surface of the thin-film, and rotates with the rotational axis via a second rotational element. The first load sensing element senses a load of the first roller or a load of the second roller. The control part synchronizes a translational velocity of the first rotational element or the second rotational element based on the load sensed by the first load sensing element.

Abstract: Provided is a method of forming a thin film having a target thickness T on a substrate by an atomic layer deposition (ALD) method. The method includes n processing conditions each having a film growth rate that is different from the others, and determining a1 to an that are cycles of a first processing condition to an n-th processing condition so that a value of |T?(a1×G1+a2×G2+ . . . +an×Gn)| is less than a minimum value among G1, G2, . . . , and Gn, where n is 2 or greater integer, G1, . . . , and Gn respectively denote a first film growth rate that is a film growth rate of the first processing condition, . . . and an n-th film growth rate that is a film growth rate of the n-th processing condition, and the film growth rate denotes a thickness of a film formed per a unit cycle in each of the processing conditions. The film forming method may precisely and uniformly control a thickness of the thin film when an ALD is performed.

Abstract: In an apparatus and a method for synchronizing a roll-to-roll transfer device, the apparatus includes a thin-film, a first roller, a second roller, a first load sensing element and a control part. The thin-film is transferred by the roll-to-roll transfer device. The first roller makes contact with a lower surface of the thin-film, and rotates with a rotational axis via a first rotational element. The second roller is disposed over the first roller, makes contact with an upper surface of the thin-film, and rotates with the rotational axis via a second rotational element. The first load sensing element senses a load of the first roller or a load of the second roller. The control part synchronizes a translational velocity of the first rotational element or the second rotational element based on the load sensed by the first load sensing element.

Abstract: The present invention relates to an apparatus for massive manufacturing a hierarchical structure that can hierarchically form high performance micro units one a flexible substrate. For this purpose, an apparatus for manufacturing a hierarchical structure according to the present invention is provided to layer micro units provided on a dummy substrate that is made of a hard material on a target substrate that is made of a flexible material by releasing the micro units from the dummy substrate. The apparatus includes: a transfer stage flat-transferring the dummy substrate by supporting the same and a main roller rolling the target substrate by winding the same as the transfer stage proceeds and layering the micro unit of the dummy substrate on the target substrate.

Abstract: Provided is a probe card including a plurality of unit plates including pad areas and contact probe areas, a plurality of electrode pads formed in the pad areas, a plurality of contact probes formed in the contact probe areas, and a plurality of interconnecting layers electrically connecting the electrode pads and the contact probes. The plurality of unit plates has different sizes and are arranged and laminated so as to expose all the pad areas of each unit plate.

Abstract: 2-dimensional nanostructured tungsten carbide which is obtained by control of the alignment of nanostructure during growth of tungsten carbide through control of the degree of supersaturation and a method for fabricating same are disclosed. The method for fabricating 2-dimensional nanostructured tungsten carbide employs a chemical vapor deposition process wherein a hydrogen plasma is applied to prepare 2-dimensional nanostructured tungsten carbide vertically aligned on a nanocrystalline diamond film. The chemical vapor deposition process wherein the hydrogen plasma is applied includes: disposing a substrate with the nanocrystalline diamond film formed thereon on an anode in a chamber, disposing a surface-carburized tungsten cathode above and at a distance from the substrate, and applying the hydrogen plasma into the chamber.