Abstract: Apparatuses and methods for providing inductance are disclosed. In one embodiment, a method for providing an inductor includes forming an electrical circuit on a substrate, forming a seal ring around the perimeter of the electrical circuit, providing a break in at least one layer of the seal ring, and electrically connecting the seal ring such that the seal ring operates as an inductor.

Abstract: Radio frequency (RF) switches and devices provide improved switching performance. An RF switch includes at least one field-effect transistor (FET) disposed between a first node and a second node, each of the at least one FET having a respective source, drain, gate, and body, and a compensation circuit connected to the respective drain of the at least one FET that compensates a non-linearity effect generated by the at least one FET.

Abstract: Radio-frequency (RF) switches and devices are disclosed providing improved switch isolation. Disclosed RF switches may include a pole node, a first throw arm connected between the pole node and a first throw node, and a second throw arm connected between the pole node and a second throw node, the second throw arm including first and second field-effect transistors (FETs). RF switches may further include a passive device connected on a first end to a source connector of the first FET and on a second end to a drain connector of the second FET.

Abstract: Semiconductor devices and methods are disclosed including switch circuitry providing improved switching performance. A semiconductor die includes a semiconductor substrate, at least one field-effect transistor (FET) formed on the semiconductor substrate, and a compensation circuit connected to a respective source of each of the at least one FET, the compensation circuit configured to compensate a non-linearity effect generated by the at least one FET.

Abstract: Radio-frequency (RF) switch circuits are disclosed including at least one first field-effect transistor (FET) disposed between first and second nodes, each of the at least one first FET having a respective body and gate. The RF switch circuit may include a coupling circuit that couples the respective body and gate of the at least one first FET, the coupling circuit configured to be switchable between a resistive-coupling mode and a body-floating mode, as well as an adjustable-resistance circuit connected to either or both of the respective gate and body of the at least one FET, the adjustable-resistance circuit including a resistor in parallel with a bypass switch.

Abstract: Radio-frequency (RF) switch circuits are disclosed providing improved switching performance. An RF switch system includes a plurality of field-effect transistors (FETs) connected in series between first and second nodes, each FET having a gate and a body. A compensation network including a gate-coupling circuit couples the gates of each pair of neighboring FETs. The compensation network may further including a body-coupling circuit that couples the bodies of each pair of neighboring FETs.

Abstract: Semiconductor devices and methods are disclosed including switch circuitry providing improved switching performance. A semiconductor die includes a semiconductor substrate, at least one field-effect transistor (FET) formed on the semiconductor substrate, and a compensation circuit connected to a respective source of each of the at least one FET, the compensation circuit configured to compensate a non-linearity effect generated by the at least one FET.

Abstract: Radio-frequency (RF) switch circuits providing improved switching performance. An RF switch system includes at least one field-effect transistor (FET) disposed between a first node and a second node, each FET having a source, drain, gate, and body. A compensation circuit is connected to the respective source of the at least one FET. The compensation circuit may be configured to compensate a non-linearity effect generated by the at least one FET.

Abstract: Radio-frequency (RF) switch circuits are disclosed providing improved switching performance. An RF switch system includes a plurality of field-effect transistors (FETs) connected in series between first and second nodes, each FET having a gate and a body. A compensation network including a gate-coupling circuit couples the gates of each pair of neighboring FETs. The compensation network may further including a body-coupling circuit that couples the bodies of each pair of neighboring FETs.

Abstract: A multiband low noise amplifier (LNA) with parallel resonant feedback includes an amplifier element configured to receive a radio frequency (RF) signal at an RF input and provide an amplified version of the RF signal at an RF output, a resistive feedback circuit coupled between the RF input and the RF output, and a plurality of series-coupled resonant circuits coupled in series with the resistive feedback circuit between the RF input and the RF output of the amplifier element, wherein each of the resonant circuits is configured to operate as an effective short circuit at a frequency other than a resonant frequency and configured to operate as an effective open circuit at the resonant frequency to decouple the resistive feedback from the amplifier element at each resonant frequency.

Abstract: Radio-frequency (RF) switch circuits providing improved switching performance. An RF switch system includes at least one field-effect transistor (FET) disposed between a first node and a second node, each FET having a source, drain, gate, and body. A compensation circuit is connected to the respective source of the at least one FET. The compensation circuit may be configured to compensate a non-linearity effect generated by the at least one FET.

Abstract: Radio-frequency (RF) switch circuits having switchable transistor coupling for providing improved switching performance. An RF switch system includes at least one first field-effect transistor (FET) disposed between first and second nodes, each FET having a body and gate. A coupling circuit couples the respective body and gate of the at least one first FET. The coupling circuit may be configured to be switchable between a resistive-coupling mode and a body-floating mode.

Abstract: Radio-frequency (RF) switch circuits are disclosed providing improved switching performance. An RF switch system includes at least one field-effect transistor (FET) disposed between a first node and a second node, each FET having a respective gate and body. A resonance circuit connects the body of each of the at least one FET to a reference node. The resonance circuit may be configured to behave as an approximately closed circuit at low frequencies below a selected value and an approximately open circuit at an operating frequency, wherein the approximately closed circuit allows removal of surface charge from the body to the reference node.

Abstract: Radio-frequency (RF) switch circuits having switchable transistor coupling for improved switching performance. An RF switch system includes at least one field-effect transistor (FET) disposed between first and second nodes, each FET having a gate and body. A switchable resistive coupling circuit is connected to each of the respective gates. A switchable resistive grounding circuit is connected to each of the respective bodies.

Abstract: Radio-frequency (RF) switch circuits are disclosed providing improved switching performance. An RF switch system includes a plurality of field-effect transistors (FETs) connected in series between first and second nodes, each FET having a gate and a body. A compensation network including a gate-coupling circuit couples the gates of each pair of neighboring FETs. The compensation network may further including a body-coupling circuit that couples the bodies of each pair of neighboring FETs.

Abstract: Apparatuses and methods for providing inductance are disclosed. In one embodiment, a method for providing an inductor includes forming an electrical circuit on a substrate, forming a seal ring around the perimeter of the electrical circuit, providing a break in at least one layer of the seal ring, and electrically connecting the seal ring such that the seal ring operates as an inductor.

Abstract: A multiband low noise amplifier (LNA) with parallel resonant feedback includes an amplifier element configured to receive a radio frequency (RF) signal at an RF input and provide an amplified version of the RF signal at an RF output, a resistive feedback circuit coupled between the RF input and the RF output, and a plurality of series-coupled resonant circuits coupled in series with the resistive feedback circuit between the RF input and the RF output of the amplifier element, wherein each of the resonant circuits is configured to operate as an effective short circuit at a frequency other than a resonant frequency and configured to operate as an effective open circuit at the resonant frequency to decouple the resistive feedback from the amplifier element at each resonant frequency.

Abstract: An exemplary coupler detector circuit comprises a coupler, a detector circuit, and a harmonic tank. The coupler has a transmission line electromagnetically coupled to a coupled line, and the coupled line has an isolated node and a coupled node. The transmission line may, for example, be a 50 ohm RF line for transmitting RF energy. The detector circuit is connected to the coupled node and is configured to detect a power transmitted along the transmission line. The harmonic tank is connected to the coupled node, and is configured to short to ground at least one harmonic signal transmitted along the coupled node.

Abstract: An exemplary coupler detector circuit comprises a coupler, a detector circuit, and a harmonic tank. The coupler has a transmission line electromagnetically coupled to a coupled line, and the coupled line has an isolated node and a coupled node. The transmission line may, for example, be a 50 ohm RF line for transmitting RF energy. The detector circuit is connected to the coupled node and is configured to detect a power transmitted along the transmission line. The harmonic tank is connected to the coupled node, and is configured to short to ground at least one harmonic signal transmitted along the coupled node.