Abstract: Apparatuses and methods for providing inductance are disclosed. In one embodiment, a method for providing an inductor includes forming an electrical circuit on a substrate, forming a seal ring around the perimeter of the electrical circuit, providing a break in at least one layer of the seal ring, and electrically connecting the seal ring such that the seal ring operates as an inductor.

Abstract: pHEMT-based switch circuits, devices including same, and methods of improving the linearity thereof. In one example, an antenna switch module includes a pHEMT switching circuit connected in series between an input signal terminal and a load terminal, the pHEMT switching circuit including at least one pHEMT configured to produce a first harmonic signal at the load terminal responsive to being driven by an input signal of a fundamental frequency received at the input signal terminal, the first harmonic signal having a first phase, and a gate resistance circuit connected to a gate of the at least one pHEMT and having a resistance value selected to produce a second harmonic signal at the load terminal, the second harmonic signal having a second phase opposite to the first phase.

Abstract: Apparatuses and methods for providing inductance are disclosed. In one embodiment, a method for providing an inductor includes forming an electrical circuit on a substrate, forming a seal ring around the perimeter of the electrical circuit, providing a break in at least one layer of the seal ring, and electrically connecting the seal ring such that the seal ring operates as an inductor.

Abstract: A radio-frequency (RF) switch includes a field-effect transistor (FET) disposed between a first node and a second node, the FET having a source, a drain, a gate, and a body. The RF switch further includes a coupling circuit including a first path and a second path, the first path being connected between the gate and one of the source or the drain via a first resistor in series with a first capacitor, the second path being connected between the body and the one of the source or the drain via a second resistor in series with a second capacitor, the coupling circuit configured to allow discharge of interface charge from either or both of the gate and body.

Abstract: Apparatuses and methods for providing inductance are disclosed. In one embodiment, a method for providing an inductor includes forming an electrical circuit on a substrate, forming a seal ring around the perimeter of the electrical circuit, providing a break in at least one layer of the seal ring, and electrically connecting the seal ring such that the seal ring operates as an inductor.

Abstract: pHEMT-based switch circuits, devices including same, and methods of improving the linearity thereof. In one example, an antenna switch module includes a pHEMT switching circuit connected in series between an input signal terminal and a load terminal, the pHEMT switching circuit including at least one pHEMT configured to produce a first harmonic signal at the load terminal responsive to being driven by an input signal of a fundamental frequency received at the input signal terminal, the first harmonic signal having a first phase, and a gate resistance circuit connected to a gate of the at least one pHEMT and having a resistance value selected to produce a second harmonic signal at the load terminal, the second harmonic signal having a second phase opposite to the first phase.

Abstract: pHEMT-based circuits and methods of improving the linearity thereof. One example pHEMT circuit includes a pHEMT connected between an input terminal and a load and a non-linear resistance connected to the pHEMT. The pHEMT produces a first harmonic signal at the load responsive to being driven by an input signal of a fundamental frequency received at the input terminal, the first harmonic signal having a first phase. The non-linear resistance has a resistance selected to produce a second harmonic signal at the load having a second phase opposite to the first phase. Methods can include determining a first amplitude and a first phase of a first harmonic signal produced at the load by a pHEMT in an ON state, and tuning the non-linear resistance to produce at the load a second harmonic signal having a second amplitude and a second phase that minimizes a net harmonic signal at the load.

Abstract: A radio-frequency (RF) switch includes a field-effect transistor (FET) disposed between a first node and a second node, the FET having a source, a drain, a gate, and a body. The RF switch further includes a coupling circuit including a first path and a second path, the first path being connected between the gate and one of the source or the drain via a first resistor in series with a first capacitor, the second path being connected between the body and the one of the source or the drain via a second resistor in series with a second capacitor, the coupling circuit configured to allow discharge of interface charge from either or both of the gate and body.

Abstract: Aspect and examples described herein provide radio-frequency amplifier circuits and methods. In one example, an amplifier circuit comprises a bypass circuit selectively coupled between an input and an output via at least one bypass switch, the at least one bypass switch configured to couple the input and the output through the bypass circuit during a bypass mode of operation, a low-noise amplifier circuit coupled between the input and the output and including a transistor, the transistor configured to couple the input and the output through the low-noise amplifier circuit during a low-noise amplifier mode of operation, a direct-current switch coupled to the bypass circuit and the low-noise amplifier circuit and configured to select between the bypass mode and the low-noise amplifier mode, and an inductor interposed between the input and the direct-current switch, the inductor being coupled to electrical ground via the direct-current switch during the low-noise amplifier mode.

Abstract: Radio-frequency (RF) switch circuits having switchable transistor coupling for improved switching performance. An RF switch system includes at least one field-effect transistor (FET) disposed between first and second nodes, each FET having a gate and body. A switchable resistive coupling circuit is connected to each of the respective gates. A switchable resistive grounding circuit is connected to each of the respective bodies. The RF switch system also includes a compensation circuit to compensate a non-linearity effect generated by at least one of the field-effect transistors.

Abstract: Aspect and examples described herein provide radio-frequency amplifier circuits and methods. In one example, an amplifier circuit comprises a bypass circuit selectively coupled between an input and an output via at least one bypass switch, the at least one bypass switch configured to couple the input and the output through the bypass circuit during a bypass mode of operation, a low-noise amplifier circuit coupled between the input and the output and including a transistor, the transistor configured to couple the input and the output through the low-noise amplifier circuit during a low-noise amplifier mode of operation, a direct-current switch coupled to the bypass circuit and the low-noise amplifier circuit and configured to select between the bypass mode and the low-noise amplifier mode, and an inductor interposed between the input and the direct-current switch, the inductor being coupled to electrical ground via the direct-current switch during the low-noise amplifier mode.

Abstract: Radio-frequency (RF) switch circuits having switchable transistor coupling for improved switching performance. An RF switch system includes at least one field-effect transistor (FET) disposed between first and second nodes, each FET having a gate and body. A switchable resistive coupling circuit is connected to each of the respective gates. A switchable resistive grounding circuit is connected to each of the respective bodies. The RF switch system also includes a compensation circuit to compensate a non-linearity effect generated by at least one of the field-effect transistors.

Abstract: pHEMT-based circuits and methods of improving the linearity thereof. One example pHEMT circuit includes a pHEMT connected between an input terminal and a load and a non-linear resistance connected to the pHEMT. The pHEMT produces a first harmonic signal at the load responsive to being driven by an input signal of a fundamental frequency received at the input terminal, the first harmonic signal having a first phase. The non-linear resistance has a resistance selected to produce a second harmonic signal at the load having a second phase opposite to the first phase. Methods can include determining a first amplitude and a first phase of a first harmonic signal produced at the load by a pHEMT in an ON state, and tuning the non-linear resistance to produce at the load a second harmonic signal having a second amplitude and a second phase that minimizes a net harmonic signal at the load.

Abstract: Radio-frequency (RF) devices are disclosed providing improved switching performance. An RF switch device includes one or more field-effect transistors (FETs) disposed between a first node and a second node. Each FET has a respective source, drain, gate, and body. A resonance circuit connects the body of each of the one or more FETs to a reference node. The resonance circuit may be configured to behave as an approximately closed circuit at low frequencies below a selected value. The resonance circuit may also be configured to behave as an approximately open circuit at an operating frequency. The approximately closed circuit allows removal of surface charge from the body to the reference node.

Abstract: A radio-frequency (RF) switch includes a field-effect transistor (FET) disposed between a first node and a second node, the FET having a source, a drain, a gate, and a body. The RF switch further includes a coupling circuit including a first path and a second path, the first path being connected between the gate and one of the source or the drain via a first resistor in series with a first capacitor, the second path being connected between the body and the one of the source or the drain via a second resistor in series with a second capacitor, the coupling circuit configured to allow discharge of interface charge from either or both of the gate and body.

Abstract: Radio-frequency (RF) switch circuits are disclosed including at least one first field-effect transistor (FET) disposed between first and second nodes, each of the at least one first FET having a respective body and gate. The RF switch circuit may include a coupling circuit that couples the respective body and gate of the at least one first FET, the coupling circuit configured to be switchable between a resistive-coupling mode and a body-floating mode, as well as an adjustable-resistance circuit connected to either or both of the respective gate and body of the at least one FET, the adjustable-resistance circuit including a resistor in parallel with a bypass switch.

Abstract: Radio-frequency (RF) switch circuits are disclosed providing improved switching performance. An RF switch system includes a plurality of field-effect transistors (FETs) connected in series between first and second nodes, each FET having a gate and a body. A compensation network including a gate-coupling circuit couples the gates of each pair of neighboring FETs. The compensation network may further including a body-coupling circuit that couples the bodies of each pair of neighboring FETs.

Abstract: Radio frequency (RF) switches and devices provide improved switching performance. An RF switch includes at least one field-effect transistor (FET) disposed between a first node and a second node, each of the at least one FET having a respective source, drain, gate, and body, and a compensation circuit connected to the respective drain of the at least one FET that compensates a non-linearity effect generated by the at least one FET.

Abstract: Radio-frequency (RF) switch circuits are disclosed providing improved switching performance. An RF switch system includes at least one field-effect transistor (FET) disposed between a first node and a second node, each FET having a respective gate and body. A resonance circuit connects the body of each of the at least one FET to a reference node. The resonance circuit may be configured to behave as an approximately closed circuit at low frequencies below a selected value and an approximately open circuit at an operating frequency, wherein the approximately closed circuit allows removal of surface charge from the body to the reference node.

Abstract: Apparatuses and methods for providing inductance are disclosed. In one embodiment, a method for providing an inductor includes forming an electrical circuit on a substrate, forming a seal ring around the perimeter of the electrical circuit, providing a break in at least one layer of the seal ring, and electrically connecting the seal ring such that the seal ring operates as an inductor.