Abstract: A dynamic random access memory (DRAM) having DRAM cells coupled to wordlines and bitlines. In a self-refresh mode, the cells coupled with the even numbered rows retain main data previously stored therein and the assistant data, which is logically opposite to the main data, is overwritten into the cells coupled with the wordlines of the odd numbered rows. When the DRAM enters the self-refresh mode, a starting refresh address for the self-refresh mode is detected. If the detected starting refresh address does not match with a predetermined correct address set for the self-refresh operation mode, a dummy refresh cycle will be established in an entry-burst self-refresh period. During the dummy refresh cycle, a dummy refresh command is added to increment an internal row address counter that provides row addresses for self-refreshing the cells of the selected wordlines within the cell array.

Abstract: A method of data mirroring in a serial-connected memory system between a first and a second memory device. A bypass command is issued to the first memory device, then a write data packet is provided to the first and second memory devices, and then a write data packet command is provided to the first and second memory devices by wherein the write data packet is passed to the second memory device through the first memory device. Mirroring of the write data packet into the first and second memory devices is thereby achieved. ECC (error correction codes) within spare fields provide means for recovering data after failure. The serial-connected memory system is especially useful for implementing SSD (solid-state disk) memory systems.

Abstract: A dynamic random access memory (DRAM) having DRAM cells coupled to wordlines and bitlines. In a self-refresh mode, the cells coupled with the even numbered rows retain main data previously stored therein and the assistant data, which is logically opposite to the main data, is overwritten into the cells coupled with the wordlines of the odd numbered rows. When the DRAM enters the self-refresh mode, a starting refresh address for the self-refresh mode is detected. If the detected starting refresh address does not match with a predetermined correct address set for the self-refresh operation mode, a dummy refresh cycle will be established in an entry-burst self-refresh period. During the dummy refresh cycle, a dummy refresh command is added to increment an internal row address counter that provides row addresses for self-refreshing the cells of the selected wordlines within the cell array.

Abstract: Bridge device architecture for connecting discrete memory devices is disclosed. A bridge device is used in conjunction with a composite memory device including at least one discrete memory device. The bridge device comprises a local control interface connected to the at least one discrete memory device, a local input/output interface connected to the at least one discrete memory device, and a global input/output interface interposed between the local control interface and the local input/output interface. The global input/output interface receives and provides global memory control signals and also receives and provides write data to and read data from the at least one discrete memory device.

Abstract: Systems and methods for performing output delay adjustment are provided for application in serial-connected devices operating as slave devices. A master device provides a clock to the first slave device, and each slave device passes the clock to the next slave device in turn, and the last slave device returns the clock to the master device. The master device compares the outgoing clock to the returned clock and determines if an output delay adjustment is needed. If so, the master device generates and outputs commands for the slave devices to perform output delay adjustment. The slave devices apply the output delay to the clock signal, but may also apply the delay to other output signals. Each of the slave devices has a circuit for performing output delay adjustment. In some implementations, each slave device is a memory device, and the master device is a memory controller.

Abstract: Systems and methods for correcting clock duty cycle are provided for application in serial-connected devices operating as slave devices. A master device provides a clock to the first slave device, and each slave device passes the clock to the next slave device in turn, and the last slave device returns the clock to the master device. The master device compares the outgoing clock to the returned clock and determines if a duty cycle correction is needed. If so, the master device generates and outputs commands for the slave devices to perform duty cycle adjustment. Each of the slave devices has a circuit for performing duty cycle adjustment. In some implementations, each slave device is a memory device, and the master device is a memory controller.

Abstract: In an embodiment, a memory device comprises memory, a first data link, a first input, a second input, a second data link, a first output and a second output. The first data link is configured to input one or more packets into the memory device. The first input is configured to input command strobe signals into the memory device that delineate command packets that are input into the memory device via the first data link. The second input is configured to input data strobe signals into the memory device that delineate data packets that are input into the memory device via the first data link. The first and second outputs are configured to output the command strobe signal and data strobe signal, respectively. The second data link is configured to output packets from the memory device.

Abstract: A mass data storage system, which comprises: a controller for issuing and receiving signals to carry out memory operations; a motherboard comprising at least one first connector and providing signal pathways for establish a ring from the controller via each of the at least one first connector and back to the controller; and at least one non-volatile memory module comprising a second connector electrically connected to a chain of non-volatile memory devices, wherein mating of the second connector with a given one of the at least one first connector causes the chain of non-volatile memory devices to be inserted into the ring, thereby to allow the controller to carry out the memory operations on the non-volatile memory devices in the chain.

Abstract: Mixed data rates in a memory system is disclosed. The system includes at least one semiconductor memory device and another device defining a ring topology. The semiconductor memory device includes input circuitry for receiving a clock signal having a frequency at least substantially equal to a frequency x. A first set of circuit elements are each clocked by a same or respective first internal signal having a frequency at least substantially equal to the frequency x. A second set of circuit elements are each clocked by a same or a respective second internal signal having a frequency at least substantially double that of the frequency x.

Abstract: A semiconductor integrated circuit includes a CMOS controlled inverter consisting of series-connected PMOS and NMOS transistors. The source of the NMOS transistor is coupled to a ground line through an additional NMOS transistor for power gating of voltage VSS. The source of the PMOS transistor can be coupled to a power supply line through an additional PMOS transistor for power gating of voltage VDD. The inverter receives an input signal IN and its complementary version that has transitioned earlier than the input signal. In response to the input signal, the inverter produces an output signal. A NAND gate that receives the output signal and the complementary input signal controls the power gating NMOS transistor. A NOR gate that receives the output signal and the complementary input signal controls the power gating PMOS transistor.

Abstract: A dynamic random access memory (DRAM) device having memory cells is operated in a self-refresh mode and a normal mode. A mode detector provides a self-refresh mode signal in the self-refresh mode of operation. It includes a free-running oscillator for generating an oscillation signal independent of the self-refresh mode signal. In response to the oscillation signal, a self-request controller provides a self-refresh request signal in the self-refresh mode. The self-refresh signal is asynchoronized with the self-fresh mode signal and is provided to an address circuit to select a wordline for refreshing the memory cells thereof. The self-refresh request controller includes logic circuitry for arbitrating timing between initial active edges of the oscillation signal and the self-refresh mode signal and providing the self-refresh request and ceasing it, regardless of conflict between the self-refresh mode signal and the oscillation signal upon self-refresh mode entry and exit.

Abstract: A non-volatile semiconductor memory device, comprising: an interface for receiving commands issued by a controller, the commands including an erase command; a functional entity with circuit components and having a terminal; a node; switchable circuitry capable of controllably switching between a first operational state in which the terminal is electrically connected to the node and a second operational state in which the terminal is electrically decoupled from the node, the node being configured to have a signal for the functional entity communicated through it when the switchable circuitry is in the first operational state; and a command processing unit configured to recognize the commands issued by the controller and, in response to recognizing the erase command, to cause the switchable circuitry to switch from the first operational state to the second operational state.

Abstract: A system includes a voltage generator to produce a pre-charge voltage signal for pre-charging one or more signals in a memory circuit. The one or more signals can be data bus lines used to access memory. The voltage generator can include an input indicating whether the memory circuit is set to a power-saving mode. According to one embodiment, the input adjusts a magnitude of the pre-charge voltage signal produced by the voltage generator. Such an embodiment is useful over conventional methods because adjusting the pre-charge voltage can result in power savings. As an example, when in the power-saving mode, the voltage generator circuit can adjust the pre-charge voltage to a value that reduces an amount of leakage current associated with a pre-charge voltage. Reducing the leakage with respect to the pre-charge voltage means that the saved power can be used for other useful purposes.

Abstract: Methods and systems are provided that allow the method of access to one or more memory banks to be performed using serial access, or using parallel access. In serial mode, each link operates as an independent serial link. In contrast, during serial mode, the links operate in common as a parallel link. Where input and output controls are received independently for each link for serial mode, a single set of input and output controls is used in common by all of the links during parallel mode.

Abstract: A first memory device and second memory device have a same input/output layout configuration. To form a stack, the second memory device is secured to the first memory device. To facilitate connectivity, the second memory device is rotationally offset with respect to the first memory device in the stack to align outputs of the first memory device with corresponding inputs of the second memory device. The rotational offset of the second memory device with respect to the first memory device aligns one or more outputs of the first memory device with one or more respective inputs of the second memory device. Based on links between outputs and inputs from one memory device to another in the stack, the stack of memory devices can include paths facilitating one or more series connection configurations through he memory devices.

Abstract: A non-volatile semiconductor memory device, which comprises (i) an interface having an input for receiving an input clock and a set of data lines for receiving commands issued by a controller including an erase command; (ii) a module having circuit components in a feedback loop configuration and being driven by a reference clock; (iii) a clock control circuit capable of controllably switching between a first state in which the reference clock tracks the input clock and a second state in which the reference clock is decoupled from the input clock; and (iv) a command processing unit configured to recognize the commands and to cause the clock control circuit to switch from the first state to the second state in response to recognizing the erase command. The module consumes less power when the reference clock is decoupled from the input clock than when the reference clock tracks the input clock.

Abstract: A semiconductor memory device, which comprises: memory; a plurality of inputs for receiving a command latch enable signal, an address latch enable signal, an information signal and a select signal indicative of whether the memory device has been selected by a controller; a plurality of outputs for releasing a set of output signals towards a next device; control circuitry; and bypass circuitry. When the select signal is indicative of the memory device having been selected by the controller, the control circuitry is configured to interpret the information signal based on the command latch enable signal and the address latch enable signal. When the select signal is indicative of the memory device not having been selected by the controller, the bypass circuitry is configured to transfer the command latch enable signal, the address latch enable signal and the information signal to the outputs of the memory device.

Abstract: Methods and systems are provided that allow the method of access to one or more memory banks to be performed using serial access, or using parallel access. In serial mode, each link operates as an independent serial link. In contrast, during serial mode, the links operate in common as a parallel link. Where input and output controls are received independently for each link for serial mode, a single set of input and output controls is used in common by all of the links during parallel mode.

Abstract: A dynamic random access memory device includes a plurality of memory subblocks. Each subblock has a plurality of wordlines whereto a plurality of data store cells are connected. Partial array self-refresh (PASR) configuration settings are independently made. In accordance with the PASR settings, the memory subblocks are addressed for refreshing. The PASR settings are made by a memory controller. Any kind of combinations of subblock addresses may be selected. Thus, the memory subblocks are fully independently refreshed. User selectable memory arrays for data retention provide effective memory control programming especially for low power mobile application.

Abstract: A dynamic random access memory (DRAM) having DRAM cells coupled to wordlines and bitlines. In a self-refresh mode, the cells coupled with the even numbered rows retain main data previously stored therein and the assistant data, which is logically opposite to the main data, is overwritten into the cells coupled with the wordlines of the odd numbered rows. When the DRAM enters the self-refresh mode, a starting refresh address for the self-refresh mode is detected. If the detected starting refresh address does not match with a predetermined correct address set for the self-refresh operation mode, a dummy refresh cycle will be established in an entry-burst self-refresh period. During the dummy refresh cycle, a dummy refresh command is added to increment an internal row address counter that provides row addresses for self-refreshing the cells of the selected wordlines within the cell array.