Patents by Inventor Hamid Noorbakhsh
Hamid Noorbakhsh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6983892Abstract: We have developed a gas distribution showerhead assembly, for use in a semiconductor processing chamber, which can be easily cleaned, with minimal chamber downtime. The gas distribution showerhead assembly includes an electrode having openings therethrough, and a gas distribution plate which includes a plurality of through-holes for delivering processing gases into the semiconductor processing chamber. The gas distribution plate is bonded to a first, lower major surface of the electrode. A removable insert which fits into an opening in the electrode through which gas flows. Spacing between surfaces of the removable insert and surfaces of the electrode is adequate to permit gas flow, but inadequate for plasma ignition within the opening. The removable insert can be easily removed during cleaning of the gas distribution showerhead, permitting the holes in the gas distribution plate to be easily accessed from both sides of the gas distribution plate.Type: GrantFiled: February 5, 2004Date of Patent: January 10, 2006Assignee: Applied Materials, Inc.Inventors: Hamid Noorbakhsh, James D. Carducci, Jennifer Y. Sun, Larry D. Elizaga
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Publication number: 20050173569Abstract: We have developed a gas distribution showerhead assembly, for use in a semiconductor processing chamber, which can be easily cleaned, with minimal chamber downtime. The gas distribution showerhead assembly includes an electrode having openings therethrough, and a gas distribution plate which includes a plurality of through-holes for delivering processing gases into the semiconductor processing chamber. The gas distribution plate is bonded to a first, lower major surface of the electrode. A removable insert which fits into an opening in the electrode through which gas flows. Spacing between surfaces of the removable insert and surfaces of the electrode is adequate to permit gas flow, but inadequate for plasma ignition within the opening. The removable insert can be easily removed during cleaning of the gas distribution showerhead, permitting the holes in the gas distribution plate to be easily accessed from both sides of the gas distribution plate.Type: ApplicationFiled: February 5, 2004Publication date: August 11, 2005Inventors: Hamid Noorbakhsh, James Carducci, Jennifer Sun, Larry Elizaga
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Patent number: 6863835Abstract: A plasma chamber apparatus and method employing a magnet system to block the plasma within the chamber interior from reaching the exhaust pump. An exhaust channel between the chamber interior and the pump includes a magnet and at least one deflector that creates turbulence in the flow of exhaust gases. The magnetic field and the turbulence produced by the deflector both increase the rate of recombination of charged particles in the gases, thereby reducing the concentration of charged particles sufficiently to quench the plasma downstream of the magnet and deflector, thereby preventing the plasma body within the chamber from reaching the exhaust pump. The plasma confinement effect of the magnetic field permits the use of a wider and/or less sinuous exhaust channel than would be required to block the plasma without the magnetic field.Type: GrantFiled: April 25, 2000Date of Patent: March 8, 2005Inventors: James D. Carducci, Hamid Noorbakhsh, Evans Y. Lee, Hongqing Shan, Siamak Salimian, Paul E. Luscher, Michael D. Welch
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Publication number: 20050016465Abstract: An electrostatic chuck provides reduced electric field effects about its peripheral edge. In one version, the chuck comprises a dielectric covering an electrode having a perimeter and a wire loop extending about the perimeter, the wire loop having a radially outwardly facing surface that is substantially rounded. Alternatively, the electrode may have a central planar portion comprising a top surface and a bottom surface, and a peripheral arcuate portion having a tip with a curvature length of at least about ?/8 radians between a normal to the top surface of the central planar portion and a normal to the upper surface of the tip. The electrostatic chuck is used to hold a substrate in a process chamber of a substrate processing apparatus.Type: ApplicationFiled: July 23, 2003Publication date: January 27, 2005Inventors: Kartik Ramaswamy, Jon McChesney, Ananda Kumar, Hamid Noorbakhsh
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Publication number: 20050003675Abstract: A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.Type: ApplicationFiled: June 7, 2004Publication date: January 6, 2005Inventors: James Carducci, Hamid Noorbakhsh, Evans Lee, Bryan Pu, Hongqing Shan, Claes Bjorkman, Siamak Salimian, Paul Luscher, Michael Welch
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Patent number: 6831742Abstract: A substrate processing apparatus 27 comprises a chamber 35 capable of processing a substrate 20, a radiation source 58 to provide a radiation, a radiation polarizer 59 adapted to polarize the radiation to one or more polarization angles that are selected in relation to an orientation 33 of a feature 25 being processed on the substrate 20, a radiation detector 54 to detect radiation reflected from the substrate 20 during processing and generate a signal, and a controller 100 to process the signal.Type: GrantFiled: October 23, 2000Date of Patent: December 14, 2004Assignee: Applied Materials, IncInventors: Zhifeng Sui, Hongqing Shan, Nils Johansson, Hamid Noorbakhsh, Yu Guan
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Patent number: 6797639Abstract: A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.Type: GrantFiled: September 24, 2002Date of Patent: September 28, 2004Assignee: Applied Materials Inc.Inventors: James D Carducci, Hamid Noorbakhsh, Evans Y Lee, Bryan Y Pu, Hongching Shan, Claes Bjorkman, Siamak Salimian, Paul E Luscher, Michael D Welch
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Patent number: 6773544Abstract: The invention concerns a plasma reactor employing a chamber enclosure including a process gas inlet and defining a plasma processing region. A workpiece support pedestal capable of supporting a workpiece at processing location faces the plasma processing region, the pedestal and enclosure being spaced from one another to define a pumping annulus therebetween having facing walls in order to permit the process of gas to be evacuated therethrough from the process region. A pair of opposing plasma confinement magnetic poles within one of the facing walls of the annulus, the opposing magnetic poles being axially displaced from one another. The magnetic poles are axially displaced below the processing location by a distance which exceeds a substantial fraction of a spacing between the facing walls of the annulus.Type: GrantFiled: January 31, 2001Date of Patent: August 10, 2004Inventors: James D. Carducci, Hamid Noorbakhsh, Evans Y. Lee, Hongqing Shan, Siamak Salimian, Paul E. Luscher, Michael D. Welch
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Patent number: 6716302Abstract: A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.Type: GrantFiled: September 24, 2002Date of Patent: April 6, 2004Assignee: Applied Materials Inc.Inventors: James D Carducci, Hamid Noorbakhsh, Evans Y Lee, Bryan Y Pu, Hongching Shan, Claes Bjorkman, Siamak Salimian, Paul E Luscher, Michael D Welch
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Patent number: 6677712Abstract: The invention is embodied in a plasma reactor for processing a semiconductor wafer, the reactor having a gas distribution plate including a front plate in the chamber and a back plate on an external side of the front plate, the gas distribution plate comprising a gas manifold adjacent the back plate, the back and front plates bonded together and forming an assembly. The assembly includes an array of holes through the front plate and communicating with the chamber, at least one gas flow-controlling orifice through the back plate and communicating between the manifold and at least one of the holes, the orifice having a diameter that determines gas flow rate to the at least one hole. In addition, an array of pucks is at least generally congruent with the array of holes and disposed within respective ones of the holes to define annular gas passages for gas flow through the front plate into the chamber, each of the annular gas passages being non-aligned with the orifice.Type: GrantFiled: May 20, 2003Date of Patent: January 13, 2004Assignee: Applied Materials Inc.Inventors: Dan Katz, Douglas A. Buchberger, Jr., Yan Ye, Robert B. Hagen, Xiaoye Zhao, Ananda H. Kumar, Kang-Lie Chiang, Hamid Noorbakhsh, Shiang-Bau Wang
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Publication number: 20030201723Abstract: The invention is embodied in a plasma reactor for processing a semiconductor wafer, the reactor having a gas distribution plate including a front plate in the chamber and a back plate on an external side of the front plate, the gas distribution plate comprising a gas manifold adjacent the back plate, the back and front plates bonded together and forming an assembly. The assembly includes an array of holes through the front plate and communicating with the chamber, at least one gas flow-controlling orifice through the back plate and communicating between the manifold and at least one of the holes, the orifice having a diameter that determines gas flow rate to the at least one hole. In addition, an array of pucks is at least generally congruent with the array of holes and disposed within respective ones of the holes to define annular gas passages for gas flow through the front plate into the chamber, each of the annular gas passages being non-aligned with the orifice.Type: ApplicationFiled: May 20, 2003Publication date: October 30, 2003Applicant: Applied Materials, Inc.Inventors: Dan Katz, Douglas A. Buchberger, Yan Ye, Robert B. Hagen, Xiaoye Zhao, Ananda H. Kumar, Kang-Lie Chiang, Hamid Noorbakhsh, Shiang-Bau Wang
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Publication number: 20030192646Abstract: A magnetic assembly for a plasma processing chamber includes an annular housing having a radially outward face and a radially inwardly facing opening, a cover plate to seal the radially inwardly facing opening, and a plurality of magnets in the annular housing. The magnets may be in preassembled modules that abut one another in a ring configuration within the annular housing. A plasma processing chamber using the magnetic assembly includes a substrate support that can fit in an inner radius of the magnetic assembly, a gas supply to maintain process gas at a pressure in the chamber, a gas energizer to energize the process gas, and an exhaust to exhaust the process gas.Type: ApplicationFiled: April 12, 2002Publication date: October 16, 2003Applicant: Applied Materials, Inc.Inventors: Robert W. Wu, Wing L. Cheng, You Wang, Senh Thach, Hamid Noorbakhsh, Kwok Manus Wong, Jennifer Y. Sun
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Patent number: 6605177Abstract: A substrate support comprises an electrode and a dielectric layer covering the electrode, the dielectric layer having a surface to receive a substrate. A gas feed-through provides a gas to the surface of the dielectric layer and comprises a conduit extending through one or more of the dielectric layer and electrode. A dielectric insert in the gas feed-through has a passage therein that allows the gas to be flowed therethrough. Two opposing electrically conducting cups are around the passage in the dielectric insert.Type: GrantFiled: September 27, 2002Date of Patent: August 12, 2003Assignee: Applied Material, Inc.Inventors: Richard R. Mett, Hamid Noorbakhsh, Robert D. Greenway
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Patent number: 6586886Abstract: The invention is embodied in a plasma reactor for processing a semiconductor wafer, the reactor having a gas distribution plate including a front plate in the chamber and a back plate on an external side of the front plate, the gas distribution plate comprising a gas manifold adjacent the back plate, the back and front plates bonded together and forming an assembly. The assembly includes an array of holes through the front plate and communicating with the chamber, at least one gas flow-controlling orifice through the back plate and communicating between the manifold and at least one of the holes, the orifice having a diameter that determines gas flow rate to the at least one hole. In addition, an array of pucks is at least generally congruent with the array of holes and disposed within respective ones of the holes to define annular gas passages for gas flow through the front plate into the chamber, each of the annular gas passages being non-aligned with the orifice.Type: GrantFiled: December 19, 2001Date of Patent: July 1, 2003Assignee: Applied Materials, Inc.Inventors: Dan Katz, Douglas A. Buchberger, Jr., Yan Ye, Robert B. Hagen, Xiaoye Zhao, Ananda H. Kumar, Kang-Lie Chiang, Hamid Noorbakhsh, Shiang-Bau Wang
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Publication number: 20030111961Abstract: The invention is embodied in a plasma reactor for processing a semiconductor wafer, the reactor having a gas distribution plate including a front plate in the chamber and a back plate on an external side of the front plate, the gas distribution plate comprising a gas manifold adjacent the back plate, the back and front plates bonded together and forming an assembly. The assembly includes an array of holes through the front plate and communicating with the chamber, at least one gas flow-controlling orifice through the back plate and communicating between the manifold and at least one of the holes, the orifice having a diameter that determines gas flow rate to the at least one hole. In addition, an array of pucks is at least generally congruent with the array of holes and disposed within respective ones of the holes to define annular gas passages for gas flow through the front plate into the chamber, each of the annular gas passages being non-aligned with the orifice.Type: ApplicationFiled: December 19, 2001Publication date: June 19, 2003Applicant: Applied Materials, Inc.Inventors: Dan Katz, Douglas A. Buchberger, Yan Ye, Robert B. Hagen, Xiaoye Zhao, Ananda H. Kumar, Kang-Lie Chiang, Hamid Noorbakhsh, Shiang-Bau Wang
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Patent number: 6562189Abstract: A plasma reactor includes a chamber adapted to support an evacuated plasma environment, a passageway connecting the chamber to a region external of the chamber, the passageway being defined by spaced opposing passageway walls establishing a passageway distance therebetweeen, and a plasma-confining magnet assembly adjacent the passageway.Type: GrantFiled: August 31, 2000Date of Patent: May 13, 2003Assignee: Applied Materials Inc.Inventors: Efrain Quiles, Hamid Noorbakhsh, James D Carducci
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Publication number: 20030037880Abstract: A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.Type: ApplicationFiled: September 24, 2002Publication date: February 27, 2003Applicant: Applied Materials, Inc.Inventors: James D. Carducci, Hamid Noorbakhsh, Evans Y. Lee, Bryan Y. Pu, Hongching Shan, Claes Bjorkman, Siamak Salimian, Paul E. Luscher, Michael D. Welch
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Publication number: 20030037883Abstract: A substrate support comprises an electrode and a dielectric layer covering the electrode, the dielectric layer having a surface to receive a substrate. A gas feed-through provides a gas to the surface of the dielectric layer and comprises a conduit extending through one or more of the dielectric layer and electrode. A dielectric insert in the gas feed-through has a passage therein that allows the gas to be flowed therethrough. Two opposing electrically conducting cups are around the passage in the dielectric insert.Type: ApplicationFiled: September 27, 2002Publication date: February 27, 2003Applicant: Applied Materials, Inc.Inventors: Richard R. Mett, Hamid Noorbakhsh, Robert D. Greenway
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Publication number: 20030038111Abstract: A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.Type: ApplicationFiled: September 24, 2002Publication date: February 27, 2003Applicant: Applied Materials, Inc.Inventors: James D. Carducci, Hamid Noorbakhsh, Evans Y. Lee, Bryan Y. Pu, Hongqing Shan, Claes Bjorkman, Siamak Salimian, Paul E. Luscher, Michael D. Welch
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Patent number: 6500299Abstract: A gas feed-through 150 to provide gas to a plasma chamber 10, comprises a dielectric insert 155 having a passage 160 that allows the gas to be flowed therethrough, and a electrically conducting cup 165 around a portion of the passage. The electrically conducting cup 165 is shaped to reduce plasma formation in the gas feed-through 150.Type: GrantFiled: July 22, 1999Date of Patent: December 31, 2002Assignee: Applied Materials Inc.Inventors: Richard R. Mett, Hamid Noorbakhsh, Robert D. Greenway