Abstract: A phase-frequency detector provides a decreased blind spot near 360.degree. of phase error and a resulting increased phase error detection range. In one embodiment, the phase-frequency detector includes two latches that are set in response to the detection of positive transitions in respective input clock signals. A reset controller resets both latches when they both get set. The duration and sequence of the latch states are thereby indicative of phase errors between the input clock signals. Two edge-triggered pulse generators provide a sustained indication of a detected positive transition in the respective input clock signals. When the time duration of the sustained indications is set equal to the reset time required by the latches and reset controller, the blind spot of the phase-frequency detector is largely eliminated.

Abstract: A high-performance flip-flop circuit implementation. The flip-flop circuit comprises an "implicit" one-shot to generate a delayed clock output (407). The flip-flop comprises a delay block (405) coupled to a clock input (210). The flip-flop may be a D-type flip-flop. In a positive-edge-triggered embodiment of the flip-flop, a falling edge (540) of the delayed clock output (407) follows a rising edge (544) of a clock signal after a delay period (548). The flip-flop clocks in new data at a data input (205) in response to the clock input (210) during this delay period (548). Data is held in a storage block (450). The flip-flop has extremely good transient characteristics, especially setup and clock-to-output times. The flip-flop consumes no static power.

Abstract: A high-performance dynamic flip-flop circuit implementation. The dynamic flip-flop circuit comprises an "implicit" one-shot to generate a delayed clock output (319). The flip-flop comprises a delay block (317) coupled to a clock input (305). The flip-flop may be a D-type flip-flop. In a positive-edge-triggered embodiment of the flip-flop, a falling edge (440) of the delayed clock output (319) follows a rising edge (444) of a clock signal after a delay period (448). The flip-flop clocks in new data at a data input (305) in response to the clock input (310) during this delay period (448). Data is held in a storage block (360). The flip-flop has extremely good transient characteristics, especially set-up and clock-to-output times. The flip-flop consumes no static power.

Abstract: An ESD protection device is provided which includes a self referencing modulation circuit for controlling its operation. The modulation circuit includes a diode stack coupled to a resistor and further coupled to an inverter powered by the signal pad voltage in one embodiment, or an odd plurality of series connected inverters powered by the signal pad voltage in an alternate embodiment. The inverter chain is coupled to the ESD clamp. The modulation circuit requires no reference supply voltage to operate. The ESD protection circuit shunts currents associated with ESD events away from ICs as well as clamping I/O pad voltages to acceptable levels during an ESD event.

Abstract: An output buffer with improved tolerance to overvoltage conditions. Among other features, especially when in a high-impedance state, the output buffer prevents a leakage path from a pad (108) through a pull-up driver (101) to supply voltage VDD when any voltage above VDD is placed on the pad (108). Further, the output buffer provides improved transient response characteristics. In one embodiment, the output buffer includes a pull-up driver (101), a first tracking transistor (120), a second tracking transistor (122), a voltage bias generator (112), and a coupling capacitor (124).

Abstract: A self-timed logic device which produces internal control and timing signals in response to an external signal is described. The circuit includes means responsive to a pulse signal for providing control and timing signals and means responsive to a change in state of a signal fed to said device for providing said pulse signal. The means for providing said pulse further includes means for selectively changing timing characteristics of said device in response to external tuning signals fed to the device. In a preferred embodiment the logic device is a static random access memory.

Abstract: A first transistor is connected to a second transistor so that the first and second transistors may be initially biased in a non-conducting state when a first node is at a first voltage potential and a second node is at a second voltage potential. A potential altering circuit selectively alters the voltage potential at the first and second nodes, causes the first and second transistors to be in a conducting state for accelerating a voltage transistion at the first and second nodes toward final values, and maintains the first and second nodes at their final voltage potentials for implementing a desired Boolean function.

Abstract: A semiconductor memory device according to the invention includes a main memory comprising a number of memory sub-arrays, each coupled to an address and a data bus, for providing or receiving data to an intermediate interface unit. The intermediate interface unit provides data to and receives data from an output bus. Also included in the semiconductor memory device is redundancy circuit including a redundant memory coupled to the output bus for storing a subset of data from one of the sub-arrays in the event that the sub-array is defective. The redundancy circuit additionally includes address fuses for storing the sub-array addresses of the subset of data to be stored in the redundant storage, and compare circuitry coupled to the address bus for comparing the address bus to the stored array addresses to determine if there is a match.

Abstract: A carry indicating circuit selectively generates a carry-in signal indicating whether the addition of a first plurality of bits results in a carry. A first carry chain circuit selectively generates a first carry-out signal indicating whether the addition of a second plurality of bits together with a carry from the addition of the first plurality of bits results in a carry, and a second carry chain circuit selectively generates a second carry-out signal indicating whether the addition of the second plurality of bits without a carry from the addition of the first plurality of bits results in a carry. Selection circuitry, coupled to the carry indicating circuit and to the first and second carry chain circuits, selects either the first carry-out signal or the second carry-out signal in response to the carry-in signal.

Abstract: A first transistor is connected to a second transistor so that the first and second transistors may be initially biased in a non-conducting state when a first node is at a first voltage potential and a second node is at a second voltage potential. A potential altering circuit selectively alters the voltage potential at the first and second nodes, causes the first and second transistors to be in a conducting state for accelerating a voltage transistion at the first and second nodes toward final values, and maintains the first and second nodes at their final voltage potentials for implementing a desired Boolean function. The biasing circuit is connected to facilitate turning off the first and second transistors when the circuit is being reset for subsequent Boolean evaluations. More specifically, the biasing circuit inhibits current flow through the first and second transistors during a precharge operation to prevent excessive power consumption.

Abstract: An integrated circuit chip has both digital and analog circuit functions, with one or more islands for isolating the analog functions from noise caused by the digital functions. An island is defined by a surrounding heavily-doped region in the face of the chip. The voltage supplies for an analog island are isolated from the digital supply voltage for high frequencies by using resistive decoupling in series along with capacitive coupling to ground. Similarly, series resistive decoupling and capacitive coupling to ground are employed for the analog input signal lines going to the island. Analog signals generated within the island are coupled to the area outside the island on the chip face by either converting to digital in an A-to-D converter, or by a differential arrangement which accounts for differences that may exist between digital and analog supply voltages.

Abstract: A voltage level conversion buffer circuit including a first and a second transistor each having a gate, a drain, and a source. The drain of the first transistor and the gate of the second transistor are connected together to provide an input to the buffer circuit, and the gate of the first transistor and the drain of the second transistor are connected to a supply voltage. The sources of the first and second transistors are connected together to provide an output for the buffer circuit.

Abstract: A tag comparator and bank selector for a set-associative cache in a computer system operates in a minimum time so that a cache hit or miss signal is generated early in a memory cycle. The data memory of the cache has two (or more) banks, with a tag store for each bank, and the two banks are accessed separately and in parallel using the index (low order address bits) while the tag translation is in progress. Two bit-by-bit tag compares are performed, one for each tag store, producing two multibit match indications, one bit for each tag bit in each tag store. These two match indications are applied to two separate dynamic NOR gates, and the two outputs applied to a logic circuit to detect a hit and generate a bank-select output. There are four possible outcomes from the compare operation: both banks miss, left bank hits, right bank hits, and both banks hit. The later condition indicates a possible ambiguity, and neither data item should be used, so a miss is signalled.

Abstract: A portable resistance tester comprises a pair of regulator circuits used to drive a bridge circuit and a detector circuit when measuring the resistance values of "in-circuit" test nodes. The tester produces an audible signal when the resistance of a measured test node falls within, or without, a predetermined resistance range.

Abstract: The physical organization of a memory cell array in an integrated circuit cache memory system is different from its logical organization because the bit lines of the array are divided into segments to physically divide the memory cell array into sub-arrays, and multiplexing the bit line segments of groups of neighboring bit lines are multiplexed to respective data lines. "Early" address bits control row decoders which select a row of memory cells in each sub-array to assert data signals on the bit line segments in each sub-array. "Late" address bits control the multiplexing of the data signals on the bit line segments to the data lines. By segmenting the bit lines, the number of "late" address bits is increased relative to the number of "early" address bits to increase the memory access speed in data processing systems that employ virtual addressing but store data in cache memory in association with physical addresses.

Abstract: A pull-up or pull-down transistor in an output buffer or the like is controlled to limit dI/dt and thus reduce noise. This control employs a series transistor in the driver circuit which has a modulating voltage applied to its gate. This modulating voltage is generated in a circuit which uses precision-timed clocks as a reference so that variations in electrical parameters (process, temperature and power supply dependent) will not cause variation in circuit noise. A dummy driver circuit is used to discharge a capacitor at a rate dependent upon the modulating voltage, and the capacitor voltage is compared with a reference at a time determined by the precision clock. The result of the comparison is used to increment or decrement the modulating voltage.

Abstract: An output buffer arrangement includes a first stable, controlled current source (MO1), a first bidirectional-switching device (24) including a CMOS transmission gate and being responsive to the first current source (MO1) for charging the gate of a pull-up transistor (MO5), a second stable, controlled current source (MO6), and a second bidirectional-switching device (27) including a second CMOS transmission gate and being responsive to the second current source (MO6) for charging the gate of a pull-down transistor (MO10). The output buffer arrangement reduces induced chip noise at low temperature, high power supply voltage without degrading substantially its high operational speed.