Abstract: CCD imagers with pixels at least thirty microns long in the direction of charge transfer have their image registers forward clocked with at least five phases. The length of gate electrodes under which barrier are induced during image integration does not exceed the five to ten microns associated with acceptably low grain. Image integration takes place without applying voltages for inducing potential energy barrier to adjacent gate electrodes in the image register. These measures permit video signals with acceptably low grain to be obtained from these large-pixel images, solving a longstanding problem in the art.

Abstract: At selected times charge packets are simultaneously transferred to the two opposing ends of a charge transfer channel by application of suitable clocking voltages to the gate electrodes overlying that charge transfer channel. Charge packets are introduced into the charge transfer channel during intervening times either by photoresponse to incident radiation or by gating charge packets into respective positions in the charge transfer channel. The technique is especially useful in the A register or C register of a field transfer type of CCD imager.

Abstract: Passage of current through a power transmission line causes infrared radiation therefrom. The construction of a high-tension (HT) line with counterwound helical conductors for current around a supporting core minimizes the surrounding magnetic field, reducing the skin resistance of the line per unit length as compared to its bulk resistance per unit length. Infrared radiation from the I.sup.2 R losses in the line is thus linearized, and the current in the line can be indirectly measured by sensing the infrared radiation from the line itself using infrared detectors.

Abstract: The charge handling capability of successive charge transfer stages in a charge transfer channel is increased beyond a certain point in the channel. This is done by increasing the number of forward clocking signal phases applied to charge transfer stages beyond this point as compared to the number of forward clocking signal phases applied to charge transfer stages before this point.

Abstract: The upper limit of longer wavelength response of a radiation detector using a Schottky-barrier diode operated in hot carrier mode is extended by a layer of relatively high concentration impurities ion implanted in Schottky barrier contact surface of the semiconductive region of the diode.

Abstract: Disclosed are CCD imagers, each with a composite image register comprising two component image registers with interleaved charge transfer channels is operated with charge transfer in opposite directions from the two image registers. Also disclosed are apparatuses for suppressing transfer smear from the output video signals supplied from such CCD imagers.