Abstract: The present disclosure relates to a novel PLK1 degradation inducing compound having a structure according to Formula I, a method for preparing the same, and the use thereof. The compounds of the present disclosure exhibit an effect of inducing PLK1 degradation. Therefore, the compounds of the present disclosure may be effectively utilized for preventing or treating PLK1-related diseases.

Abstract: Provided are a method for evaluating performance and a system thereof. The method according to some embodiments may include obtaining a first model trained using a labeled dataset, obtaining a second model built by performing unsupervised domain adaptation on the first model, generating pseudo labels for an evaluation dataset using the second model, wherein the evaluation dataset is an unlabeled dataset, and evaluating performance of the first model using the pseudo labels.

Abstract: The present disclosure relates to a novel PLK1 degradation inducing compound having a structure according to Formula I, a method for preparing the same, and the use thereof. The compounds of the present disclosure exhibit an effect of inducing PLK1 degradation. Therefore, the compounds of the present disclosure may be effectively utilized for preventing or treating PLK1-related diseases.

Abstract: The present invention relates to a GPX4 protein degradation-inducing compound. Specifically, the present invention provides a bifunctional compound in which a GPX4 protein-binding moiety and a CRBN E3 ubiquitin ligase-binding moiety are linked by a chemical linker, a method for preparing the same, a method for degrading a GPX4 protein using the same, and the use for preventing or treating GPX4-related diseases or ferroptosis-related diseases.

Abstract: The present disclosure is drawn to, among other things, a method of managing a memory device. In some aspects, the method includes determining whether a first address for a page in a first memory region is mapped in a map table, setting a target address as a second address identified in the map table as being mapped to the first address, setting the target address as the first address, determining a number of bits that fail in each word of a plurality of first-layer error correction code (ECC) words for the target address, and adding the target address to the map table, writing-back contents from the target address to a repair address in the first memory region, and updating the map table by mapping the target address to the repair address.

Abstract: The present disclosure is drawn to, among other things, a method of managing a memory device. In some aspects, the method includes determining whether a first address for a page in a first memory region is mapped in a map table, setting a target address as a second address identified in the map table as being mapped to the first address, setting the target address as the first address, determining a number of bits that fail in each word of a plurality of first-layer error correction code (ECC) words for the target address, and adding the target address to the map table, writing-back contents from the target address to a repair address in the first memory region, and updating the map table by mapping the target address to the repair address.

Abstract: The present disclosure is drawn to, among other things, a magnetoresistive device and a magnetoresistive memory comprising a plurality of such magnetoresistive devices. In some aspects, a magnetoresistive device may include a magnetically fixed region, a magnetically free region above or below the magnetically fixed region, and an intermediate region positioned between the magnetically fixed region and the magnetically free region, wherein the intermediate region includes a first dielectric material. The magnetoresistive device may also include encapsulation layers formed on opposing side walls of the magnetically free region, wherein the encapsulation layers include the first dielectric material.

Abstract: The present disclosure relates to a novel PLK1 degradation inducing compound, a method for preparing the same, and the use thereof. The compounds of the present disclosure exhibit an effect of inducing PLK1 degradation. Therefore, the compounds of the present disclosure may be effectively utilized for preventing or treating PLK1-related diseases.

Abstract: The present disclosure relates to a novel PLK1 degradation inducing compound, a method for preparing the same, and the use thereof. The compounds of the present disclosure exhibit an effect of inducing PLK1 degradation. Therefore, the compounds of the present disclosure may be effectively utilized for preventing or treating PLK1-related diseases.

Abstract: A semiconductor device may include a memory bank, an X-decoder adjacent to the memory bank in a row direction, a Y-decoder adjacent to the memory bank in a column direction, X-lines extending from the X-decoder across the memory bank in the row direction, Y-lines extending from the Y-decoder across the memory bank in the column direction, and a plurality of connection lines.

Abstract: The present disclosure is drawn to, among other things, a magnetoresistive device and a magnetoresistive memory comprising a plurality of such magnetoresistive devices. In some aspects, a magnetoresistive device may include a magnetically fixed region, a magnetically free region above or below the magnetically fixed region, and an intermediate region positioned between the magnetically fixed region and the magnetically free region, wherein the intermediate region includes a first dielectric material. The magnetoresistive device may also include encapsulation layers formed on opposing side walls of the magnetically free region, wherein the encapsulation layers include the first dielectric material.

Abstract: The present invention relates to a compound represented by Formula 1 wherein A, B, L, X, and R1 to R6 are as described herein, or a pharmaceutically acceptable salt thereof, which serves as a GLP-1 receptor agonist and may be useful in the prevention or treatment of a disease associated with GLP-1 activity.

Abstract: A semiconductor device may include a memory bank, an X-decoder adjacent to the memory bank in a row direction, a Y-decoder adjacent to the memory bank in a column direction, X-lines extending from the X-decoder across the memory bank in the row direction, Y-lines extending from the Y-decoder across the memory bank in the column direction, and a plurality of connection lines.

Abstract: The present disclosure is drawn to, among other things, a method of managing a memory device. In some aspects, the method includes determining whether a first address for a page in a first memory region is mapped in a map table, setting a target address as a second address identified in the map table as being mapped to the first address, setting the target address as the first address, determining a number of bits that fail in each word of a plurality of first-layer error correction code (ECC) words for the target address, and adding the target address to the map table, writing-back contents from the target address to a repair address in the first memory region, and updating the map table by mapping the target address to the repair address.

Abstract: A magnetoresistive device may include one or more electrodes or electrically conductive lines and a fixed region and a free region disposed between the electrodes or electrically conductive lines. The fixed region may have a fixed magnetic state and the free region may be configured to have a first magnetic state and a second magnetic state. The free region may store a first value when in the first magnetic state and store a second value when in the second magnetic state. The magnetoresistive device may further include a dielectric layer between the free region and the fixed region and a spin-Hall (SH) material proximate to at least a portion of the free region. An insertion layer may be disposed between the SH material and the free region.

Abstract: A magnetoresistive device may include one or more electrodes or electrically conductive lines and a fixed region and a free region disposed between the electrodes or electrically conductive lines. The fixed region may have a fixed magnetic state and the free region may be configured to have a first magnetic state and a second magnetic state. The free region may store a first value when in the first magnetic state and store a second value when in the second magnetic state. The magnetoresistive device may further include a dielectric layer between the free region and the fixed region and a spin-Hall (SH) material proximate to at least a portion of the free region. An insertion layer may be disposed between the SH material and the free region.

Abstract: The present invention relates to a pharmaceutical composition for preventing or treating metabolic diseases, in which a novel 3-(4-(benzyloxy)phenyl)hex-4-inoic acid derivative and at least another active ingredient, which is selected from the group consisting of dipeptidyl peptidase-4 (DPPIV) inhibitor-based, sulfonylurea-based, thiazolidinedione (TZD)-based, biguanide-based, and sodium/glucose cotransporter 2 (SGLT2) inhibitor-based drugs, may be administered in combination or in the form of a composite preparation.

Abstract: The present invention relates to a cyclohexene derivative, a preparation method thereof, and a pharmaceutical composition for preventing or treating metabolic disease containing the cyclohexene derivative as an active ingredient. The cyclohexene derivative according to the present invention increases the intracellular activity of cyclic adenosine monophosphate (cAMP) by activating G protein-coupled receptor 119 (GPR-119) and simultaneously exhibits weight loss and hypoglycemic effects by inducing the release of glucagon-like peptide-1 (GLP-1), which is a neuroendocrine protein, and thus can be useful as a pharmaceutical composition for preventing or treating metabolic diseases such as obesity, type 1 diabetes, type 2 diabetes, inadequate glucose tolerance, insulin resistance, hyperglycemia, hyperlipidemia, hypertriglyceridemia, hypercholesterolemia, dyslipidemia and syndrome X.

Abstract: The present disclosure is drawn to, among other things, a magnetoresistive device and a magnetoresistive memory comprising a plurality of such magnetoresistive devices. In some aspects, a magnetoresistive device may include a magnetically fixed region, a magnetically free region above or below the magnetically fixed region, and an intermediate region positioned between the magnetically fixed region and the magnetically free region, wherein the intermediate region includes a first dielectric material. The magnetoresistive device may also include encapsulation layers formed on opposing side walls of the magnetically free region, wherein the encapsulation layers include the first dielectric material.

Abstract: Provided is a composition for inhibiting or alleviating itching, which includes riboflavin or riboflavin analog. The riboflavin or riboflavin analog are very effective in inhibiting or alleviating itching, scalp itching, or allergic itching by inhibiting itching information transmission through blocking of a current generated by histamine, which is a major factor of itching.