Abstract: First, second, and third trenches are formed in a layer over a substrate. The third trench is substantially wider than the first and second trenches. The first, second, and third trenches are partially filled with a first conductive material. A first anti-reflective material is coated over the first, second, and third trenches. The first anti-reflective material has a first surface topography variation. A first etch-back process is performed to partially remove the first anti-reflective material. Thereafter, a second anti-reflective material is coated over the first anti-reflective material. The second anti-reflective material has a second surface topography variation that is smaller than the first surface topography variation. A second etch-back process is performed to at least partially remove the second anti-reflective material in the first and second trenches. Thereafter, the first conductive material is partially removed in the first and second trenches.

Abstract: A method of fabricating a fin-like field-effect transistor (FinFET) device includes providing a substrate having a first region and a second region, and forming a plurality of mandrel features in the first region with a first spacing. The method further includes forming first spacers along sidewalls of the mandrel features with a targeted width A, and forming second spacers with a first width W1 along sidewalls of the first spacers, wherein two back-to-back adjacent second spacers are separated by a gap. The method further includes depositing a dielectric material in the gap and in the second region, and performing a first cut thereby removing a first subset of the first spacers. Coincident with the removing of the first subset, the method further includes partially removing the dielectric material in the second region thereby forming a mesa of the dielectric material in the second region.

Abstract: A method of fabricating a fin-like field-effect transistor (FinFET) device includes providing a substrate having a first region and a second region, and forming a plurality of mandrel features in the first region with a first spacing. The method further includes forming first spacers along sidewalls of the mandrel features with a targeted width A, and forming second spacers with a first width W1 along sidewalls of the first spacers, wherein two back-to-back adjacent second spacers are separated by a gap. The method further includes depositing a dielectric material in the gap and in the second region, and performing a first cut thereby removing a first subset of the first spacers. Coincident with the removing of the first subset, the method further includes partially removing the dielectric material in the second region thereby forming a mesa of the dielectric material in the second region.

Abstract: A method of fabricating a fin-like field-effect transistor (FinFET) device is disclosed. A plurality of mandrel features are formed on a substrate. First spacers are formed along sidewalls of the mandrel feature and second spacers are along sidewalls of the first spacers. Two back-to-back adjacent second spacers separate by a gap in a first region and merge together in a second region of the substrate. A dielectric feature is formed in the gap and a dielectric mesa is formed in a third region of the substrate. A first subset of the first spacer is removed in a first cut. Fins and trenches are formed by etching the substrate using the first spacer and the dielectric feature as an etch mask.

Abstract: A method of fabricating a fin-like field-effect transistor (FinFET) device is disclosed. A plurality of mandrel features are formed on a substrate. First spacers are formed along sidewalls of the mandrel feature and second spacers are along sidewalls of the first spacers. Two back-to-back adjacent second spacers separate by a gap in a first region and merge together in a second region of the substrate. A dielectric feature is formed in the gap and a dielectric mesa is formed in a third region of the substrate. A first subset of the first spacer is removed in a first cut. Fins and trenches are formed by etching the substrate using the first spacer and the dielectric feature as an etch mask.