Abstract: A memory array for computing-in-memory (CIM) is disclosed. The memory array for CIM includes a bit cell array, at least one word line and at least one bit line. The bit cell array has a plurality of bit cells, wherein each bit cell is operated at an operating voltage. The at least one word line is electrically connected to the bit cell array, wherein the at least one word line is associated with a first parameter. The at least one bit line is electrically connected to the bit cell array, wherein the bit cells extend along a specific direction, each the at least one bit line has an electrical parameter associated therewith, each the bit cell is associated with a second parameter, a first quantity of the plurality of bit cells of the bit cell array extends along the specific direction, and the memory array determines how an expansion associated with at least one of the first parameter and the second parameter is according to the specific direction.

Abstract: A semiconductor chip includes a first intellectual property block. There are a second intellectual property block and a third intellectual property block around the first intellectual property block. There is a multiple metal layer stack over the first intellectual property block, the second intellectual property block, and the third intellectual property block. An interconnect structure is situated in the upper portion of the multiple metal layer stack. The interconnect structure is configured for connecting the first intellectual property block and the second intellectual property block. In addition, at least a part of the interconnect structure extends across and over the third intellectual property block.

Abstract: A micro-electro mechanical system (MEMS) device includes a MEMS substrate, at least one movable element laterally confined within a matrix layer that overlies the MEMS substrate, and a cap substrate bonded to the matrix layer through bonding material portions. A first movable element selected from the at least one movable element is located inside a first chamber that is laterally bounded by the matrix layer and vertically bounded by a first capping surface that overlies the first movable element. The first capping surface includes an array of downward-protruding bumps including respective portions of a dielectric material layer. Each of the downward-protruding bumps has a vertical cross-sectional profile of an inverted hillock. The MEMS device can include, for example, an accelerometer.

Abstract: A power adapter can include a power input node, a communication channel node, an output node, a low-pass filter, a modulator, and a high-pass filter. The low-pass filter can include a low-pass input node coupled to the power input node and a low-pass output node coupled to the output node. The modulator can include a modulator input node coupled to the communication channel node and a modulator output node. The modulator can be configured to modulate data received from the communication channel node onto a signal having a higher frequency than a data-carrying signal carrying the data received from the communication channel node and output the modulated data to a high-pass input node of a high-pass filter. The high-pass filter can include the high-pass input node coupled to the modulator output node and a high-pass output node coupled to the output node.

Abstract: A method for determining a Lower Grade Glioma (LGG) subtype for a subject. A device for determining an LGG subtype in a subject. A system using machine learning for determining a Lower Grade Glioma (LGG) subtype in a subject.

Abstract: A power voltage supply device, including a reference bias voltage generating circuit, a temperature compensation bias voltage generating circuit, a compensation voltage generator, and a voltage buffer, is provided. The reference bias voltage generating circuit generates a reference bias voltage. The temperature compensation bias voltage generating circuit generates a temperature compensation bias voltage that changes as temperature rises. The compensation voltage generator generates a first power voltage based on the reference bias voltage, and selectively boosts the first power voltage based on the temperature compensation bias voltage. An input terminal of the voltage buffer receives the first power voltage. The voltage buffer generates a second power voltage corresponding to the first power voltage to a load circuit.

Abstract: Resource metrics are obtained for resources from distributed resources associated with operations of an enterprise. Metric types from the distributed resources defined in the metrics are grouped and aggregated into aggregated metric types within a data model. Each aggregated metric type data value of the data model is weighed. The weighted aggregated data values are used to calculate an overall service health value of the enterprise. A current instance of the data model is processed to render one or more single views within an interface to a user of the enterprise. Each single view includes the overall service health value along with a custom-level of detail for each aggregated metric type and the corresponding aggregated metric data values.

Abstract: A dynamic incident management system and method receives and stores business customer sales information. This information includes information about sales by day and time of day for a period of time at each business location. A machine learning model is generated for forecasting revenue for each business location based on the received information. A plurality of work orders are received for service calls to certain business customer sales locations. A priority is assigned to each of the received work orders. A rank is assigned to each of the received work orders having a common priority, based on, at least in part, a revenue forecast provided the machine learning module of sales at a projected day and time for the service call. Updated work orders having the priority and rank information are supplied to an incident management supplier for performing the associated service calls based on the priority and rank information.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first substrate including a first face and a second face opposite the first face. A second substrate is bonded to the first face of the first substrate such that the second face of the first substrate faces away from the second substrate. One or more recesses are arranged in the second face of the first substrate and are configured to compensate for thermal expansion or thermal contraction.

Abstract: A radio frequency (RF) device and a multi-band matching circuit thereof are provided. The multi-band matching circuit includes an inductance circuit, a first capacitance circuit, an inductor, and a second capacitance circuit. A first terminal of the inductance circuit is coupled to a RF signal input terminal of the multi-band matching circuit. A first terminal of the first capacitance circuit is coupled to a second terminal of the inductance circuit. A first terminal of the inductor and a first terminal of the second capacitance circuit are coupled to a second terminal of the first capacitance circuit. A second terminal of the inductor is coupled to a first reference voltage. A second terminal of the second capacitance circuit is coupled to a second reference voltage. The second capacitance circuit is controlled by a single-bit control signal to change a capacitance value of the second capacitance circuit.

Abstract: Transaction usage metrics for terminals and maintenance records for the terminals are evaluated in view of suggested maintenance actions for peripherals and/or components of the peripherals associated with the terminals. Any open service records for terminals predicted to require a maintenance action based on the evaluation have the maintenance action added to their open service records. A new open service record is generated for any terminal predicted to require the maintenance action based on the evaluation when an existing open service record for the corresponding terminal was not detected. In an embodiment, service calls associated with the open service records are monitored for compliance and non-compliant actions are flagged for reporting.

Abstract: An anti-fuse sensing device and an operation method thereof are provided. The anti-fuse sensing device includes an anti-fuse sensing circuit, a voltage generating circuit, and a power-on detection circuit. During a power-on transient period of the voltage generating circuit, the power-on detection circuit provides an initialization voltage to a control terminal of the anti-fuse sensing circuit to prevent a voltage level of the control terminal of the anti-fuse sensing circuit from being in an unknown state. After the power-on transient period ends, the voltage generating circuit provides a control voltage to the control terminal of the anti-fuse sensing circuit. The anti-fuse sensing circuit senses a resistance state of an anti-fuse based on the control voltage. During the period when the voltage generating circuit provides the control voltage, the power-on detection circuit stops providing the initialization voltage to the control terminal of the anti-fuse sensing circuit.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first substrate including a first face and a second face opposite the first face. A second substrate is bonded to the first face of the first substrate such that the second face of the first substrate faces away from the second substrate. One or more recesses are arranged in the second face of the first substrate and are configured to compensate for thermal expansion or thermal contraction.

Abstract: A radio frequency (RF) device and a multi-band matching circuit thereof are provided. The multi-band matching circuit includes an inductance circuit, a first capacitance circuit, an inductor, and a second capacitance circuit. A first terminal of the inductance circuit is coupled to a RF signal input terminal of the multi-band matching circuit. A first terminal of the first capacitance circuit is coupled to a second terminal of the inductance circuit. A first terminal of the inductor and a first terminal of the second capacitance circuit are coupled to a second terminal of the first capacitance circuit. A second terminal of the inductor is coupled to a first reference voltage. A second terminal of the second capacitance circuit is coupled to a second reference voltage. The second capacitance circuit is controlled by a single-bit control signal to change a capacitance value of the second capacitance circuit.

Abstract: An anti-fuse sensing device and an operation method thereof are provided. The anti-fuse sensing device is adapted for sensing a resistance state of an anti-fuse. The anti-fuse sensing device includes a voltage generating circuit, a comparison circuit, and a sensing circuit. The voltage generating circuit is configured to generate a comparison voltage that changes with temperature. The comparison circuit is coupled to the voltage generating circuit to receive the comparison voltage. The comparison circuit is configured to compare the comparison voltage with a reference voltage, and convert a difference between the comparison voltage and the reference voltage into a bias voltage that changes with temperature. The sensing circuit is coupled to the comparison circuit to receive the bias voltage. The sensing circuit is configured to sense the resistance state of the anti-fuse according to the bias voltage.

Abstract: A method for repairing a substrate and an electronic device are disclosed, wherein the electronic device includes: a substrate; a patterned metal layer disposed on the substrate, and the patterned metal layer including a first metal section and a second metal section which is disconnected to the first metal section, wherein at least one of the first metal section and the second metal section has a through hole; and a first conductive layer electrically connected to one of the first metal section and the second section by the through hole; wherein the first conductive layer has a protrusion, the protrusion locating outside the through hole.

Abstract: A switch device includes a signal input terminal and a switch circuit. The signal input terminal is used to receive a radio frequency signal. The switch circuit is coupled to the signal input terminal, and includes a first transistor and a second transistor. The first transistor includes a control terminal used to receive a first control voltage to turn off the first transistor; a first terminal; and a second terminal. The second transistor includes a control terminal used to receive a second control voltage to turn off the second transistor; a first terminal; and a second terminal. The second control voltage is different from the first control voltage.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first substrate including a first face and a second face opposite the first face. A second substrate is bonded to the first face of the first substrate such that the second face of the first substrate faces away from the second substrate. One or more recesses are arranged in the second face of the first substrate and are configured to compensate for thermal expansion or thermal contraction.

Abstract: In an embodiment, a system includes: a circular frame comprising a first side and a second side opposite the first side, wherein the circular frame comprises an aperture formed therethrough; an insert disposed within the aperture; a first wafer disposed over the insert; a second wafer disposed over the first wafer, wherein both the first wafer and the second wafer are configured for eutectic bonding when heated; two clamps disposed on the first side along the circular frame, wherein the two clamps are configured to contact the second wafer at respective clamp locations; and a plurality of pieces configured to secure the insert within the aperture, the plurality of pieces comprising both fixed and flexible pieces, the plurality of pieces comprising two fixed pieces disposed respectively adjacent to the clamp locations along the second side of the circular frame.

Abstract: A microelectromechanical systems (MEMS) package with roughness for high quality anti-stiction is provided. A device substrate is arranged over a support device. The device substrate comprises a movable element with a lower surface that is rough and that is arranged within a cavity. A dielectric layer is arranged between the support device and the device substrate. The dielectric layer laterally encloses the cavity. An anti-stiction layer lines the lower surface of the movable element. A method for manufacturing the MEMS package is also provided.