Abstract: An operation control method of a semiconductor memory device includes executing a Delay Locked Loop (DLL) locking in response to a DLL reset signal and measuring a loop delay of a DLL. The operation control method further includes storing measured loop delay information and DLL locking information; and performing a delay control of a command path using the stored loop delay information and DLL locking information independent of the DLL, during a latency control operation.

Abstract: An operation control method of a semiconductor memory device includes executing a Delay Locked Loop (DLL) locking in response to a DLL reset signal and measuring a loop delay of a DLL. The operation control method further includes storing measured loop delay information and DLL locking information; and performing a delay control of a command path using the stored loop delay information and DLL locking information independent of the DLL, during a latency control operation.

Abstract: The present invention provides a composite silicon anode material hybridizing carbon nanofiber for lithium secondary battery prepared by the steps comprising: i) preparing a support made by amorphous silicon alloy after processing amorphous silicon and metal; ii) dispersing the catalyst selected from Fe, Co, Ni, Cu, Mg, Mn, Ti, Sn, Si, Zr, Zn, Ge, Pb or In on the surface of said support made by amorphous silicon alloy; and iii) growing the carbon nanofiber using a carbon source selected from carbon monoxide, methane, acetylene or ethylene on said support by a chemical vapor deposition method, wherein the amount of grown carbon nanofiber is 1˜110 wt % of the amount of said support.