Abstract: Provided is a method and apparatus for measuring fat content using a computed tomography (CT) image. The fat content measurement apparatus trains a fat prediction model by using learning data including a CT image or noise image for learning and generates a fat distribution image to be used for fat content measurement by the fat prediction model having completed learning upon receiving a CT image for diagnosis.

Abstract: An image segmentation method and apparatus are provided. The image segmentation apparatus inputs an image into a deep learning model to obtain a plurality of probability maps, and, based on the plurality of probability maps, identifies a plurality of objects in the image. Here, the plurality of probability maps include prediction values of the deep learning model indicating a probability that each pixel of the image belongs to a plurality of combinations defined as regions of at least two objects among the plurality of objects.

Abstract: A driving circuit includes: a display driver to generate a horizontal synchronization signal and a vertical synchronization signal according to a first clock signal of a first oscillator; a sensor driver to generate a touch signal according to a second clock signal of a second oscillator; and a determination circuit to detect a cycle of at least one of the horizontal synchronization signal or the vertical synchronization signal according to the second clock signal, and output a detection signal when the cycle is out of a range. The determination circuit is a part of the display driver or the sensor driver.

Abstract: A semiconductor device includes a dielectric layer, a conductive layer formed over the dielectric layer, and a reduction sacrificial layer formed between the dielectric layer and the conductive layer, wherein the reduction sacrificial layer includes a first reduction sacrificial material having higher electronegativity than the dielectric layer, and a second reduction sacrificial material having higher electronegativity than the first reduction sacrificial material.

Abstract: In some examples, an embolic protection system is provided for deploying a device in a diseased vessel of a vasculature, the embolic protection system comprising: an embolic protection device (EPD) including: an EPD shaft; a dual-hoop filter provided at a distal end of the EPD shaft, the dual-hoop filter including a distal hoop provided at a distal end of the dual-hoop filter, and a proximal hoop provided at a proximal end of the dual-hoop filter; and a filter actuator located at or towards a proximal end of the EPD, the filter actuator operable to selectively open or close the distal hoop and the proximal hoop of the dual-hoop filter.

Abstract: Disclosed is a one-body particle including a core present as a non-aggregated primary particle and a coating layer formed on at least a part of the core, wherein the coating layer is a multilayer coating layer containing at least one of a +3 or +4 element, and an active material for secondary batteries including the same.

Abstract: Provided are casting products for cooling heating elements, the casting products including: a body made of a metal material; and a cooling pipe providing a path through which a cooling fluid flows, and being made of an aluminum alloy material, wherein the body includes a plate-shaped plate portion, protrusion extensions protruding from the plate portion and extending along the cooling pipe so that at least part of the cooling pipe is fully buried, and a cooling pin structure formed integrally with the plate portion, and the cooling pipe is formed in such a way that a first pipe thickness of the cooling pipe having a cross-sectional shape in a first direction is greater than a second pipe thickness in a second direction perpendicular to the first direction, and the first direction is in parallel to the plate portion, and the second direction is a thickness direction of the plate portion.

Abstract: A semiconductor device includes: a first electrode; a booster layer over the first electrode; a hafnium-zirconium based layer over the booster layer; and a second electrode over the hafnium-zirconium based layer.

Abstract: The present specification discloses a calculation processing device which has a high processing rate with low cost. The calculation processing device according to the present specification is a calculation processing device including a fetch unit which reads, from a memory, data required for a calculation to perform processing of a neural network, and provides the data to a calculation unit. The fetch unit may comprise: multiple routers each having a data processing mapping table in which a scheme of processing input data is recorded according to a node identifier (ID) of the input data; and a fetch network controller which controls respective data processing mapping tables of the multiple routers.

Abstract: A semiconductor device includes: a first electrode; a second electrode; and a multi-layered stack including a hafnium oxide layer of a tetragonal crystal structure which is positioned between the first electrode and the second electrode, wherein the multi-layered stack includes: a seed layer for promoting tetragonal crystallization of the hafnium oxide layer and having a tetragonal crystal structure; and a booster layer for boosting a dielectric constant of the hafnium oxide layer.

Abstract: Limited precision of head standardization is a problem in the prior art. In the present invention, positioning of a patient head is standardized using two cameras, namely, a first digital camera 11 and a second digital camera 12. In a profile positioning step, while a display on a first monitor 13 is viewed, the vertical position of the first digital camera 11 is adjusted, and instructions are given to the patient to adjust the forward-backward position of the head so that the point of intersection of a first vertical reference line VL1 and a first horizontal reference line HL1 corresponding to the camera optical axis of the first digital camera 11 is in the center of the ear canal of the patient.

Abstract: The present specification discloses an arithmetic processing device which has a high processing rate with a low cost. The arithmetic processing device according to the present specification is an arithmetic processing device comprising a fetch unit which reads data required for a calculation for performing processing of a neural network from a memory, and provides the data to an arithmetic unit. The fetch unit may include: a fetch buffer into which data stored in each of data memory slices is fetched; and an interface controller for assigning a node ID corresponding to each of the data memory slices to the data fetched into the fetch buffer, and controlling a timing of outputting the fetched data according to the node ID.

Abstract: Improvement is required in many aspects in order to enhance a treatment effect by reliably applying necessary orthodontic force for moving teeth. The present invention provides a mouthpiece type removable orthodontic appliance including a base portion (10), and a fitting portion (20) provided on the base portion. The base portion (10) is a thin plate formed of an inelastic material and extending along the shape of an occlusal surface of a dental arch of a jaw on which the orthodontic appliance is fitted. The fitting portion (20) includes a movement member (30, 40) to be fitted on a tooth intended to be moved, and a gripping member (50, 60) to be fitted on a tooth unintended to be moved.

Abstract: The present specification discloses a calculation processing device which has a high processing rate with low cost. The calculation processing device according to the present specification is a calculation processing device including a fetch unit which reads, from a memory, data required for a calculation to perform processing of a neural network, and provides the data to a calculation unit. The fetch unit may comprise: multiple routers each having a data processing mapping table in which a scheme of processing input data is recorded according to a node identifier (ID) of the input data; and a fetch network controller which controls respective data processing mapping tables of the multiple routers.

Abstract: A semiconductor device includes a dielectric layer, a conductive layer formed over the dielectric layer, and a reduction sacrificial layer formed between the dielectric layer and the conductive layer, wherein the reduction sacrificial layer includes a first reduction sacrificial material having higher electronegativity than the dielectric layer, and a second reduction sacrificial material having higher electronegativity than the first reduction sacrificial material.

Abstract: Methods and systems for a near-field communication. In one aspect, a method of fabricating a relay for a near-field communication system comprises the steps of providing a flexible substrate; and providing an electric circuit on the flexible substrate, wherein the electric circuit comprises a hub inductor pattern configured to receive and transmit via electro-magnetic induction; one or more terminal inductor patterns laterally spaced apart from the hub inductor pattern relative to a surface of the flexible substrate and configured to receive and transmit via electro-magnetic induction; and a connecting trace between the hub inductor and the one or more terminal inductors.

Abstract: A semiconductor device includes a dielectric layer, a conductive layer formed over the dielectric layer, and a reduction sacrificial layer formed between the dielectric layer and the conductive layer, wherein the reduction sacrificial layer includes a first reduction sacrificial material having higher electronegativity than the dielectric layer, and a second reduction sacrificial material having higher electronegativity than the first reduction sacrificial material.

Abstract: A semiconductor device includes: a first electrode; a second electrode; and a multi-layered stack including a hafnium oxide layer of a tetragonal crystal structure which is positioned between the first electrode and the second electrode, wherein the multi-layered stack includes: a seed layer for promoting tetragonal crystallization of the hafnium oxide layer and having a tetragonal crystal structure; and a booster layer for boosting a dielectric constant of the hafnium oxide layer.

Abstract: A semiconductor device includes: a first electrode; a second electrode; and a multi-layered stack including a hafnium oxide layer of a tetragonal crystal structure which is positioned between the first electrode and the second electrode, wherein the multi-layered stack includes: a seed layer for promoting tetragonal crystallization of the hafnium oxide layer and having a tetragonal crystal structure; and a booster layer for boosting a dielectric constant of the hafnium oxide layer.

Abstract: A device for processing convolution operations includes: a processor that executes, in a neural network, a convolution operation on input data in a form of width×height×input channel and on a filter in a form of K×K×input channel or K×K to correspond to a form of the input data, K being an integer greater than or equal to one, and that generates output data in a form of width×height×output channel; and a reader that sequentially reads, from a memory storing the input data, a data group having more pieces of data than unit data throughput of an operator, and provides the data group to the operator to reuse at least one piece of data constituting the data group in the convolution operation. The processor executes, by using one or more operators identical to the operator, the convolution operation multiple times based on the unit data throughput.