Abstract: A method includes forming a metallic feature, forming an etch stop layer over the metallic feature, implanting the metallic feature with a dopant, forming a dielectric layer over the etch stop layer, performing a first etching process to etch the dielectric layer and the etch stop layer to form a first opening, performing a second etching process to etch the metallic feature and to form a second opening in the metallic feature, wherein the second opening is joined with the first opening, and filling the first opening and the second opening with a metallic material to form a contact plug.

Abstract: The present invention relates to a smart mobile cart for nursing and caring that includes a pole assembly, a flexible gooseneck tube arm and a vital sign sensing device. The flexible gooseneck tube arm has two ends, one of which the two ends is connected with the pole assembly and another end is configured with a device connector. A mobile device is attached to the smart mobile cart through the device connector. The vital sign sensing device is placed on the smart mobile cart through a device convenient carrier. The pole assembly, the flexible gooseneck tube arm, and the device convenient connector are configured to have a ground height adjustable above from a ground level, so as to provide the mobile device and the vital sign sensing device at different ground clearances respectively for a user to operate.

Abstract: A device includes a fin extending from a semiconductor substrate; a gate stack over the fin; a first spacer on a sidewall of the gate stack; a source/drain region in the fin adjacent the first spacer; an inter-layer dielectric layer (ILD) extending over the gate stack, the first spacer, and the source/drain region, the ILD having a first portion and a second portion, wherein the second portion of the ILD is closer to the gate stack than the first portion of the ILD; a contact plug extending through the ILD and contacting the source/drain region; a second spacer on a sidewall of the contact plug; and an air gap between the first spacer and the second spacer, wherein the first portion of the ILD extends across the air gap and physically contacts the second spacer, wherein the first portion of the ILD seals the air gap.

Abstract: A method includes forming a metallic feature, forming an etch stop layer over the metallic feature, implanting the metallic feature with a dopant, forming a dielectric layer over the etch stop layer, performing a first etching process to etch the dielectric layer and the etch stop layer to form a first opening, performing a second etching process to etch the metallic feature and to form a second opening in the metallic feature, wherein the second opening is joined with the first opening, and filling the first opening and the second opening with a metallic material to form a contact plug.

Abstract: An IC structure comprises a first transistor formed on a substrate, a first interconnect structure over the first transistor, a dielectric layer over the first interconnect structure, a plurality of 2D semiconductor islands on the dielectric layer, and a plurality of second transistors formed on the plurality of 2D semiconductor islands.

Abstract: A partial sounding method for sounding-reference-signal (SRS) is proposed. The network node may transmit higher-layer signal configuring a fractional SRS resource for partial sounding in configured resource blocks (RBs) to user equipment (UE). The UE may determine an SRS sequence length and a frequency-domain starting position of the fractional SRS resource based on the higher-layer signal to increase the SRS capacity.

Abstract: A device includes a fin extending from a semiconductor substrate; a gate stack over the fin; a first spacer on a sidewall of the gate stack; a source/drain region in the fin adjacent the first spacer; an inter-layer dielectric layer (ILD) extending over the gate stack, the first spacer, and the source/drain region, the ILD having a first portion and a second portion, wherein the second portion of the ILD is closer to the gate stack than the first portion of the ILD; a contact plug extending through the ILD and contacting the source/drain region; a second spacer on a sidewall of the contact plug; and an air gap between the first spacer and the second spacer, wherein the first portion of the ILD extends across the air gap and physically contacts the second spacer, wherein the first portion of the ILD seals the air gap.

Abstract: A smart transaction device with multiple fingerprint recognition includes a device body having a first surface and a second surface on the opposite side, a plurality of fingerprint sensing devices being respectively arranged on the first surface and the second surface to individually sense the fingerprints of different fingers of a user and store them in the memory as comparison data.

Abstract: The present invention provides a driver and passenger behavior information system which includes a sensing device to detect a driving behavior signal, wherein the sensing device is set at the vehicle control associated apparatus for controlling the vehicle and sensing the driving behavior signal by the sensing device, a driving behavior record device is coupled to the sensing device to store the sensing signals.

Abstract: A method for protecting application programs of electronic computing devices, which includes arranging a fingerprint detection device at least partially overlapped on the display screen of the electronic computing device, setting a verification area on the display screen to lock or unlock the software applications or files framed by the verification area and to protect the framed software applications or files from unauthorized retrieving.

Abstract: The invention relates to a method of overcoming immune suppression in tumor microenvironment or stimulating immune response against cancer, comprising administering to a subject a combination of a histone deacetylase (HDAC) inhibitor and a tyrosine kinase inhibitor (TKI).

Abstract: A method includes forming a first dielectric layer over a source/drain region, and forming a source/drain contact plug over and electrically connecting to the source/drain region. A top portion of the source/drain contact plug has a first lateral dimension. An implantation process is performed to implant a dopant into the first dielectric layer. The implantation process results in the source/drain contact plug to have a second lateral dimension smaller than the first lateral dimension. The method further includes forming a second dielectric layer over the etch stop layer, and forming a gate contact plug adjacent to the source/drain contact plug.

Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes a substrate, a gate structure, a dielectric structure and a contact structure. The substrate has source/drain (S/D) regions. The gate structure is on the substrate and between the S/D regions. The dielectric structure covers the gate structure. The contact structure penetrates through the dielectric structure to connect to the S/D region. A lower portion of a sidewall of the contact structure is spaced apart from the dielectric structure by an air gap therebetween, while an upper portion of the sidewall of the contact structure is in contact with the dielectric structure.

Abstract: Aspects of the disclosure provide an electronic device including processing circuitry and a method for beam failure recovery. The processing circuitry can determine whether beam failure occurs on at least one of a plurality of cells configured for serving an electronic device. When the beam failure is determined to occur on the at least one of the plurality of cells, the processing circuitry can send an uplink message that includes a first portion and a second portion to a network. The first portion indicating the beam failure is transmitted using a physical random access channel (PRACH) resource. The second portion indicates at least one of cell information of the at least one of the plurality of cells and new beam information of one or more new candidate beams for the at least one of the plurality of cells and is transmitted using a physical uplink shared channel (PUSCH) resource.

Abstract: Aspects of the disclosure provide an electronic device including processing circuitry and a method for beam failure recovery (BFR). When beam failure is determined to occur on at least one of a plurality of cells configured for the electronic device, the processing circuitry can send a BFR scheduling request (SR) to a network. The BFR SR can indicate the beam failure and requesting resources to report the beam failure. The processing circuitry can receive priority scheduling for the resources from the network. The processing circuitry can send a BFR request (BFRQ) using the resources. The BFRQ can indicate cell information of the at least one of the plurality of cells and new beam information of one or more new candidate beams for the at least one of the plurality of cells.

Abstract: An AC power input socket includes a casing and at least two conductive pins. The casing comprises a connection side and an output side based on performance of the AC power input socket. The casing is provided with an accommodating groove at the connection side, each of the two conductive pins includes a power connection section located in the accommodating groove, an output section extending from the power connection section and passing through the casing to be exposed on the output side, and a capacitor connecting section extending from an end of the output section. Each of the conductive pins is provided with a through hole in the output section for disposing an electric wire, and the capacitor connecting section provides a capacitor pin to be connected thereon, so that the capacitor pin and the electric wire do not need to be disposed at a same hole position.

Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes a substrate, a gate structure, a dielectric structure and a contact structure. The substrate has source/drain (S/D) regions. The gate structure is on the substrate and between the S/D regions. The dielectric structure covers the gate structure. The contact structure penetrates through the dielectric structure to connect to the S/D region. A lower portion of a sidewall of the contact structure is spaced apart from the dielectric structure by an air gap therebetween, while an upper portion of the sidewall of the contact structure is in contact with the dielectric structure.

Abstract: A method includes forming a metallic feature, forming an etch stop layer over the metallic feature, implanting the metallic feature with a dopant, forming a dielectric layer over the etch stop layer, performing a first etching process to etch the dielectric layer and the etch stop layer to form a first opening, performing a second etching process to etch the metallic feature and to form a second opening in the metallic feature, wherein the second opening is joined with the first opening, and filling the first opening and the second opening with a metallic material to form a contact plug.

Abstract: Examples pertaining to reference signal sharing in mobile communications are described. An apparatus (e.g., UE) receives a plurality of reference signals comprising a first set of reference signals and a second set of reference signals. The apparatus performs time or frequency tracking based on the plurality of reference signals. Alternatively, the apparatus generates a channel state information (CSI) report associated with the plurality of reference signals and transmits the CSI report to a network.