Abstract: A process and apparatus for delivering carbon i.e., coal dust, to be combusted in a furnace is presented. The furnace is of the type having plural combustion points and may include a shaft furnace such as, for example, a blast or cupola furnace. The carbon dust is delivered in dosed quantities to each of the individual combustion points in a separate air stream which is under a predetermined pressure. The carbon (coal dust)/carrier gas (air) is delivered to each combustion point in the furnace at super critical speed, i.e., the speed of sound, the carrier gas having a relatively high proportion of solid material therein. The actual quantity of carbon material delivered to each combustion point is directly detected and monitored as a consequence of volumetric measurement and is appropriately corrected by means of a secondary air supply when the carbon quantity either exceeds or falls below a predetermined nominal value.

Abstract: A stackable, tray-type packaging unit for semiconductor discs, having a lr portion accommodating the discs and a matching lid, comprising two upright, elongated side walls in the lower portion and two narrow end walls, all walls as well as the lid consisting of deep-drawn plastic material inert to the disc material. A plurality of ribs are formed opposite to each other on the side walls, serving as guide means for the discs during the loading of the unit, stabilizing ribs for accommodating the discs are provided in the base of the lower portion on the joining line between opposite guide ribs. The lower part of the side walls are curved inwardly at an angle of 30.degree. to 60.degree. with respect to the perpendicular upper part.

Abstract: This relates to a process for manufacturing monolithic integrated circuits comprising at least one pair of complementary bipolar planar transistors. The pair of transistors, having two buried layers and two superimposed epitaxially deposited layers upon a semiconductor substrate body, are manufactured by deposition of an epitaxial layer having a thickness wherein the base zone of the pnp-transistor remains and is surrounded by a p-conducting zone which is diffused during the diffusion of the base zone of the npn-transistor and a portion of an insulating zone.