Abstract: Organometallic complexes which bear at least one ligand which has a unit having a triplet energy of at least 22 000 cm?1, a process for preparing the organometallic complexes, a mixture comprising at least one inventive organometallic complex, the use of the organometallic complexes or of the mixture in organic light-emitting diodes, the organometallic complexes preferably being used as emitter materials, and specific nitrogen- or phosphorus-substituted triphenylene derivatives and a process for their preparation.

Abstract: The present invention is directed to the field of organic light emitting diode (OLED) electroluminescent devices comprising a light-emitting layer containing an organic metal coordination compound with tailored ligands of the general structure (1) where (2) is a N-containing heterocycle comprising one or more cycle and where (3) is a unit with a triplet energy of at least 22,220 cm?1.

Abstract: The invention relates to a controlling device (10) for a greenhouse (15), with a computerized control element (20), a lighting element (30) and at least one detector element (40), wherein the lighting element (30) and the detector element (40) are connected with the computerized control element (20), wherein the lighting element (30) comprises at least one light emitting mean (31), emitting a light (32), wherein the light (32) illuminates a plant (70) growing in the greenhouse (15).

Abstract: A bulk acoustic wave, BAW, resonator device comprising first and second metal layers (10, 20) and an intervening piezoelectric layer (30), the first metal layer (10) comprising spaced first and second portions (12, 14), wherein the first and second portions (12, 14) are each arranged as a plurality of interconnected fingers (16, 18), and wherein each of the plurality of fingers (16) of the first portion (12) is acoustically coupled to at least one of the fingers (18) of the second portion (14). In one embodiment the fingers of the first portion (12) are interlaced with the fingers (18) of the second portion (14), thereby providing direct coupling. In another embodiment the acoustic coupling between the fingers of the first and second portions is provided indirectly by further portions (15) of the first metal layer (10).

Abstract: The invention relates to an illuminating device (10) for illuminating an object, with a lighting element (20) and an inspection element (30), wherein the lighting element (20) comprises at least one first light emitting mean (21), wherein the first light emitting mean (21) is emitting light with a first spectrum (22), wherein the inspection element (30) comprises at least one second light emitting mean (31), wherein the second light emitting mean (31) is emitting light with a second spectrum (32), wherein the second spectrum (32) is essentially separated from the first spectrum (22), with an illuminating mode, operating only the lighting element (20), with an inspection mode, operating the lighting element (20) and the inspection element, and the superposition of the light of the first (21) and the second light emitting mean (31) yields a result light.

Abstract: A material composition, including metallic nanoparticles of silver, silver alloys, or copper, having antimicrobial properties is disclosed. The metallic nanoparticles are embedded or encapsulated in a matrix formed of chitosan or chitosan derivative-based compounds.

Abstract: An electroluminescent device (9) for emitting light (7) whose color point is able to be set variably, comprising at least two electroluminescent regions (41, 42) that, to allow the same operating voltage to be applied, are arranged to be connected in parallel electrically, wherein the electroluminescent regions (41, 42) comprise—at least one first electroluminescent region (41) of a first electroluminescent material for emitting light in a first spectral band in accordance with a first luminance vs. voltage characteristic (81), and—at least one second electroluminescent region (42) of a second electroluminescent material for emitting light in a second spectral band that is not the same as the first spectral band, in accordance with a second luminance vs. voltage characteristic (82) that is not the same as the first luminance vs. voltage characteristic (81).

Abstract: The invention relates to a MEMS resonator comprising a movable element (48), the movable element (48) comprising a first part (A) having a first Young's modulus and a first temperature coefficient of the first Young's modulus, and the movable element (48) further comprising a second part (H) having a second Young's modulus and a second temperature coefficient of the second.

Abstract: The present invention relates to a method for separating at least one non-emission region (16) from at least one emission region (15) within an organic light emitting diode (OLED) (1), which comprises a substrate material (10) as a carrier, whereas the substrate material (10) is coated and/or superimposed by at least one anode layer (11) and at least one cathode layer (13), whereas at least one functional layer (12) is sandwiched in between the layers (11, 13) for emitting light, whereas impressing a voltage in between the anode layer (11) and the cathode layer (13) causes an emission of light within the emission region (15), and whereas the separating of the one non-emission region (16) is caused by scribing a groove (14) into at least the anode and/or the cathode layer (11, 13), in order to insulate the electrical current within at least one layer (11, 13) from the emission region (15) into the non-emission region (16), whereas the groove (14) is performed by mechanical scribing, applying a scribing tool (1

Abstract: An organic electroluminescent device for emitting light, comprising a substrate (1), a first electrode (2) and a second electrode (4) and having at least one light-emitting layer (3) arranged between the electrodes (2, 4), wherein the first electrode (2), which is intended to transmit the light (5) generated in the organic light-emitting layer (3), comprises a current distributing layer (21, 22), to stimulate uniform light emission, having a structure of conductor tracks of titanium nitride (21) intended to conduct an operating current, and a plurality of regions of titanium oxide (22) adjoining the structure of conductor tracks and intended to transmit the light (5) generated.

Abstract: A thin-film bulk acoustic wave (BAW) resonator, such as SBAR or FBAR, for use in RF selectivity filters operating at frequencies of the order of 1 GHz. The BAW resonator comprises a piezoelectric layer (14) having first and second surfaces on opposing sides, a first electrode (16) extending over the first surface, and a second electrode (12) extending over the second surface, the extent of the area of overlap (R1) of the first and second electrodes determining the region of excitation of the fundamental thickness extensional (TE) mode of the resonator. The insertion loss to the resonator is reduced by providing a dielectric material (18) in the same layer as the first electrode (16) and surrounding that electrode. The material constituting the dielectric material (18) has a different mass, typically between 5% and 15 %, from the material comprising the first electrode (16) it surrounds. The mass of the dielectric material (18) can be lower or higher than the mass of the first electrode (16).

Abstract: An electro-acoustic resonator (1, 8, 17) of the membrane or FBAR type (1) or the solidly-mounted or SBAR type (8), with electrodes comprising a single conducting layer or multiple conducting layers, i.e. sandwich construction (17) with an optimum coupling factor kr and thus an improved filter bandwidth. The optimum coupling factor kr is achieved by the arrangement that the top electrode (6, 15, 25) is thinner than the bottom electrode (4, 13, 23). The coupling factor is independent of the resonator's layout defined by the mask.

Abstract: A sensor includes a substrate 1 and at least one resonator, which includes an acoustic reflector 2, a piezoelectric layer 5, a first and second electrode 3, 4 placed on the same side of the piezoelectric layer 5, and a sensing layer 6. The sensing layer 6 reacts with a chemical or biological agent by absorption, adsorption, desorption or chemical reaction. As a result the individual frequency of a resonator changes and conclusions about the agent can be drawn. Such a sensor is very sensitive to an agent being sensed, especially when used in liquids.

Abstract: A ladder filter comprising a plurality of bulk acoustic wave resonators, the resonators comprising a plurality of series resonators series resonators in series between an input terminal and an output terminal of the filter, and one or more shunt resonators each connected between a junction between two series resonators and a common terminal, the series resonators comprising an input series resonator connected to the input terminal and an output series resonator connected to the output terminal, and wherein the shunt resonators are designed to satisfy: a unity aspect ratio and wherein the series resonators are designed to satisfy an aspect ratio different from unity. The aspect ratio is defined as the ratio of length to width of the resonator.

Abstract: In order to provide a resonator structure (100) in particular a bulk-acoustic-wave (BAW) resonator, such as a film BAW resonator (FBAR) or a solidly-mounted BAW resonator (SBAR), comprising at least one substrate (10); at least one reflector layer (20) applied or deposited on the substrate (10); at least one bottom electrode layer (30), in particular bottom electrode, applied or deposited on the reflector layer (20); at least one piezoelectric layer (40), in particular C-axis normal piezoelectric layer, applied or deposited on the bottom electrode layer (30); at least one top electrode layer (50), in particular top electrode, applied or deposited on the bottom electrode layer (30) and/or on the piezoelectric layer (40) such that the piezoelectric layer (40) is in between the bottom electrode layer (30) and the top electrode layer (50), it is proposed that at least one dielectric layer (63, 65) applied or deposited in and/or on at least one space in at least one region of non-overlap between the bottom electro

Abstract: The invention relates to a resonator filter structure (10) for radio frequency (RF) filters, especially a bulk acoustic wave (BAW) filter structure. According to the invention, a resonator filter structure (10) is constructed with a BAW lattice filter section (20), in which all of the BAW resonator elements (20-1, 20-2, 20-3, 20-4) within the BAW lattice filter section (20) have substantially equal resonance frequencies. According to the invention, there are parallel capacitances (30-1, 30-2) connected in parallel to the BAW resonators (20-2, 20-3) of one branch type of the BAW lattice filter section (20). Thus, anti-resonance frequency of the respective BAW resonator (20-2, 20-3) is tuned. That results in a very narrow passband which corresponds approximately to the difference in anti-resonance frequencies between diagonal and horizontal branches of the lattice filter section (20). The parallel capacitances (30-1, 30-2) are used to tune the bandwidth: the smaller the capacitance, the smaller the bandwidth.

Abstract: A filter structure, comprising a first signal line, a second signal line, a third signal line and a fourth signal line, said first and third signal lines defining an input port and said second and fourth signal lines defining an output port of a section of said filter structure, said section being defined by a first bulk acoustic wave resonator (A) which is connected between said first signal line and said second signal line, a second bulk acoustic wave resonator (G) which is connected between said third signal line and said fourth signal line, a third bulk acoustic wave resonator (C) which is connected between said first signal line and said fourth signal line, and a fourth bulk acoustic wave resonator (E) which is connected between said second signal line and said third signal line; is characterized in that a frequency pulling factor defined d of at least one of said acoustic wave resonators is non-zero, said frequency pulling factor d being defined by for first and second bulk acoustic wave resonators havi

Abstract: The invention relates to a filter device equipped with at least one bulk acoustic wave resonator, which comprises a resonator unit and a reflection element (2) comprising several layers (6, 7, 8). The layers (6, 7, 8) each comprise a mixture of at least two materials. Within each layer (6, 7, 8), the composition of the mixture varies continuously and periodically relative to the layer thickness.

Abstract: The invention relates to a filter device equipped with at least one bulk acoustic wave resonator, which comprises a resonator unit and a reflection unit. The resonator unit comprises a first (3) and a second electrode (5) together with a textured piezoelectric layer (4) between the first (3) and second (5) electrodes.

Abstract: The invention relates to an array of ultrasound transducers which each comprise a substrate (1), a membrane (2), a first electrode (4), a piezoelectric layer (5), and a second electrode (6), wherein the substrate (1) comprises at least one opening (3) which adjoins the membrane (2) at one side, while the piezoelectric layer (5) has a high piezoelectric coupling coefficient k and is textured. The invention further relates to an ultrasound transducer and to a method of manufacturing an array of ultrasound transducers.