Abstract: In accordance with an embodiment, a circuit includes an RF switch, a leakage compensation circuit having a bias port and a reference port, a replica resistor coupled between a reference node and the reference port of the leakage compensation circuit, and a bias resistor coupled between the bias port of the leakage compensation circuit and a load path of the RF switch. The leakage compensation circuit configured to mirror a current from the bias port to the reference port, and apply a voltage from the reference port to the bias port.

Abstract: In accordance with an embodiment, a circuit includes an RF switch, a leakage compensation circuit having a bias port and a reference port, a replica resistor coupled between a reference node and the reference port of the leakage compensation circuit, and a bias resistor coupled between the bias port of the leakage compensation circuit and a load path of the RF switch. The leakage compensation circuit configured to mirror a current from the bias port to the reference port, and apply a voltage from the reference port to the bias port.

Abstract: In accordance with an embodiment, an integrated circuit includes a substrate, an amplifier MOSFET, and a bias voltage terminal configured to generate a potential difference of the substrate relative to at least one load terminal of the amplifier MOSFET.

Abstract: A radio frequency resistor element comprises a resistive polysilicon trace, an isolation component and a semiconductor substrate. The resistive polysilicon trace is located above the isolation component. The isolation component is laterally at least partially surrounded by a modified semiconductor region located above the semiconductor substrate and having a higher charge carrier recombination rate than the semiconductor substrate.

Abstract: A method for manufacturing a semiconductor device in accordance with various embodiments may include: forming an opening in a first region of a semiconductor substrate, the opening having at least one sidewall and a bottom; implanting dopant atoms into the at least one sidewall and the bottom of the opening; configuring at least a portion of a second region of the semiconductor substrate laterally adjacent to the first region as at least one of an amorphous or polycrystalline region; and forming an interconnect over at least one of the first and second regions of the semiconductor substrate.

Abstract: In accordance with an embodiment, an integrated circuit includes a substrate, an amplifier MOSFET, and a bias voltage terminal configured to generate a potential difference of the substrate relative to at least one load terminal of the amplifier MOSFET.

Abstract: According to various embodiments, a switching device may include: an antenna terminal; a switch including a first switch terminal and a second switch terminal, the first switch terminal coupled to the antenna terminal, the switch including at least one transistor at least one of over or in a silicon region including an oxygen impurity concentration of smaller than about 3×1017 atoms per cm3; and a transceiver terminal coupled to the second switch terminal, wherein the transceiver terminal is at least one of configured to provide a signal received via the antenna terminal or configured to receive a signal to be transmitted via the antenna terminal.

Abstract: In accordance with an embodiment, a radio frequency (RF) switching circuit includes a plurality of series connected RF switch cells comprising a load path and a control node, a plurality of first gate resistors coupled between control nodes of adjacent RF switch cells, and an input resistor having a first end coupled to a control node of one of the plurality of RF switch cells and a second end configured to an output of a switch driver. Each of the plurality of series connected RF switch cells includes a switch transistor.

Abstract: A high-frequency switching circuit includes a high-frequency switching transistor, wherein a high-frequency signal-path extends via a channel-path of the high-frequency switching transistor. The high-frequency switching circuit includes a control circuit and the control circuit is configured to apply at least two different bias potentials to a substrate of the high-frequency switching transistor, depending on a control signal received by the control circuit.

Abstract: In accordance with an embodiment, a radio frequency (RF) switching circuit includes a plurality of series connected RF switch cells comprising a load path and a control node, a plurality of first gate resistors coupled between control nodes of adjacent RF switch cells, and an input resistor having a first end coupled to a control node of one of the plurality of RF switch cells and a second end configured to an output of a switch driver. Each of the plurality of series connected RF switch cells includes a switch transistor.

Abstract: A high-frequency switching circuit includes a high-frequency switching transistor, wherein a high-frequency signal-path extends via a channel-path of the high-frequency switching transistor. The high-frequency switching circuit includes a control circuit and the control circuit is configured to apply at least two different bias potentials to a substrate of the high-frequency switching transistor, depending on a control signal received by the control circuit.

Abstract: A high-frequency switching circuit includes a high-frequency switching transistor, wherein a high-frequency signal-path extends via a channel-path of the high-frequency switching transistor. The high-frequency switching circuit includes a control circuit and the control circuit is configured to apply at least two different bias potentials to a substrate of the high-frequency switching transistor, depending on a control signal received by the control circuit.

Abstract: A method for manufacturing a semiconductor device in accordance with various embodiments may include: forming an opening in a first region of a semiconductor substrate, the opening having at least one sidewall and a bottom; implanting dopant atoms into the at least one sidewall and the bottom of the opening; configuring at least a portion of a second region of the semiconductor substrate laterally adjacent to the first region as at least one of an amorphous or polycrystalline region; and forming an interconnect over at least one of the first and second regions of the semiconductor substrate.

Abstract: An RF switch includes a switchable RF transistor. The switchable RF transistor includes a stripe of a plurality of adjacent RF transistor fingers and at least one non-switchable dummy transistor that is arranged at an end of the stripe of the switchable RF transistor.

Abstract: A circuit includes first, second, third and fourth terminals, and first and second switches. The first switch switches a first signal from the first terminal to the second terminal or from the first terminal to the fourth terminal. The second switch switches a second signal from the third terminal to the second terminal or from the third terminal to the fourth terminal. The first switch comprises a first switching element with a first high-frequency switching transistor connected between the first terminal and the second terminal, and a second switching element with a second high-frequency switching transistor connected between the first terminal and the fourth terminal. The second switch comprises a third switching element with a third high-frequency transistor connected between the third terminal and the second terminal and comprises a fourth switching element with a fourth high-frequency switching transistor connected between the third terminal and the fourth terminal.

Abstract: According to various embodiments, a switching device may include: an antenna terminal; a switch including a first switch terminal and a second switch terminal, the first switch terminal coupled to the antenna terminal, the switch including at least one transistor at least one of over or in a silicon region including an oxygen impurity concentration of smaller than about 3×1017 atoms per cm3; and a transceiver terminal coupled to the second switch terminal, wherein the transceiver terminal is at least one of configured to provide a signal received via the antenna terminal or configured to receive a signal to be transmitted via the antenna terminal.

Abstract: An electrostatic discharge (ESD) protection element includes a collector area, a first barrier area, a semiconductor area, a second barrier area and an emitter area. The collector area has a first conductivity type. The first barrier area borders on the collector area and has a second conductivity type. The semiconductor area borders on the first barrier area and is an intrinsic semiconductor area, or has the first or second conductivity type and a dopant concentration which is lower than a dopant concentration of the first barrier area. The second barrier area borders on the semiconductor area and has the second conductivity type and a higher dopant concentration than the semiconductor area. The emitter area borders on the second barrier area and has the first conductivity type.

Abstract: An RF switch circuit for switching RF signals includes a first terminal and a second terminal and a series connection of a plurality of transistors between the first terminal of the RF switch circuit and the second terminal of the RF switch circuit. Furthermore, the RF switch circuit includes a control circuit configured to conductively couple, in a high impedance state of the RF switch circuit, the first terminal of the RF switch circuit to a control terminal of a first transistor in a series of the series connection of the plurality of transistors. The second terminal of the RF switch circuit is conductively coupled to a control terminal of a last transistor in the series of the series connection of the plurality of transistors.

Abstract: An RF switch circuit for switching RF signals includes a first terminal and a second terminal and a series connection of a plurality of transistors between the first terminal of the RF switch circuit and the second terminal of the RF switch circuit. Furthermore, the RF switch circuit includes a control circuit configured to conductively couple, in a high impedance state of the RF switch circuit, the first terminal of the RF switch circuit to a control terminal of a first transistor in a series of the series connection of the plurality of transistors. The second terminal of the RF switch circuit is conductively coupled to a control terminal of a last transistor in the series of the series connection of the plurality of transistors.

Abstract: An RF switch includes a switchable RF transistor. The switchable RF transistor includes a stripe of a plurality of adjacent RF transistor fingers and at least one non-switchable dummy transistor that is arranged at an end of the stripe of the switchable RF transistor.