Abstract: A projectile-launched aircraft system includes a projectile launcher including a triggering mechanism, a rotary-wing, hover-capable aircraft including a rotor assembly that includes at least one rotor blade, wherein the rotor blade includes a stowed configuration and a deployed configuration that is circumferentially spaced from the stowed configuration about a pivot axis, wherein, upon actuation of the triggering mechanism, the projectile launcher is configured to launch the aircraft along a flightpath.

Abstract: A fan braking structure includes a fan including a frame having an upright bearing cup, and a fan impeller having a vertical rotating shaft pivotally received in the bearing cup and provided at a free end with a groove; a braking structure located at a lower part of the bearing cup and including a brake plate and an electromagnet, and the brake plate being provided at one side with a protruded brake pin and at another side with a magnetic member; and an elastic element disposed between and pressed against the brake plate and the electromagnet. When the fan is powered off, the electromagnet is energized and produces magnetic poles that magnetically repel the magnetic member, such that the brake pin is pushed by a magnetic force and the elastic element toward the rotating shaft to engage with the groove, causing the fan to brake and stop rotating inertially.

Abstract: A method of manufacturing a semiconductor device includes forming a first layer of a first planarizing material over a patterned surface of a substrate, forming a second layer of a second planarizing material over the first planarizing layer, crosslinking a portion of the first planarizing material and a portion of the second planarizing material, and removing a portion of the second planarizing material that is not crosslinked. In an embodiment, the method further includes forming a third layer of a third planarizing material over the second planarizing material after removing the portion of the second planarizing material that is not crosslinked. The third planarizing material can include a bottom anti-reflective coating or a spin-on carbon, and an acid or an acid generator. The first planarizing material can include a spin-on carbon, and an acid, a thermal acid generator or a photoacid generator.

Abstract: This application provides a sidelink resource configuration method and apparatus. The method includes: configuring, by a network device, sidelink bandwidth part (SL BWP) configuration information for a terminal device, where the SL BWP configuration information is used to indicate a common first parameter of M resource pools in the SL BWP; and configuring, by the terminal device, the M resource pools in the SL BWP based on the SL BWP configuration information in a process of configuring the resource pools in the SL BWP, where the M resource pools have at least one same parameter, and the at least one parameter is determined based on the first parameter. Therefore, communication between different terminal devices can be implemented by configuring the resource pools in the SL BWP.

Abstract: Systems and methods to briefly deviate from and resume back to amending a section of a note are disclosed. Exemplary implementations may: obtain audio information representing sound captured by an audio section of a client computing platform, such sound including speech from a user associated with the client computing platform; effectuate presentation of a graphical user interface that includes sections of the note; analyze the audio information to determine which individual ones of the spoken inputs are the primary spoken input or the deviant spoken input; determine, based on analysis, which section of the note to which the deviant spoken input is related; alternately amend, based on the determination, sections of the note by deviating from one section to another section and returning back to the one section for continued population; and effectuate, via the user interface, presentation of the alternating amendments to the sections of the note.

Abstract: An integrated circuit (IC) device comprises a high voltage semiconductor device (HVSD) on a frontside of a semiconductor body and further comprises an electrode on a backside of the semiconductor body opposite the frontside. The HVSD may, for example, be a transistor or some other suitable type of semiconductor device. The electrode has one or more gaps directly beneath the HVSD. The one or more gaps enhance the effectiveness of the electrode for improving the breakdown voltage of the HVSD.

Abstract: A method of operating a traffic management system may comprise identifying a vehicle queue in a first lane of a road based on sensor data from one or more connected vehicles traveling along the road, determining driving instructions for a connected vehicle within a queue management region in a second lane, adjacent to the first lane, to create a gap in front of the connected vehicle for a vehicle in the vehicle queue to change lanes into the gap, and transmitting the driving instructions to the connected vehicle.

Abstract: The disclosure provides a method and system for preventing a fraudulent video relay. The method comprises: a video source node slicing a video source and relaying fragments of video data to next nodes; a relay node user receiving a relayed fragment of video data from a previous node and writing a video relay session information into a system; a viewing node establishing a video relay session with the relay node, receiving, reassembling, decoding and playing the fragment of video data, and regularly recording relay behavior data to the system; and a relay reward node regularly obtaining unprocessed relay behavior data, calculating a reward value for each relay user, and writing the reward value into a block-chain system, to implement accurate rewards of relay.

Abstract: ETA (estimated time of arrival) calculation for a mobile machine is disclosed. The ETA of the mobile machine to a destination is calculated by obtaining a current pose of the mobile machine, obtaining a global path from the current pose of the mobile machine to the destination, obtaining a local path, calculating a dynamic ETA for each pair of the consecutive poses in the local path and summing the calculated dynamic ETAs, calculating a baseline ETA for each pair of consecutive poses from a pose in the global path that is closest to the last pose in the local path to the last pose in the global path and summing the calculated baseline ETAs, and obtaining a total ETA to the destination based on the dynamic ETA and the baseline ETA.

Abstract: The present application provides a gas inlet structure for a reagent kit, which includes a gas inlet connecting pipe and a plugging pipe arranged at one end of the gas inlet connecting pipe. The plugging pipe is provided with a gas nozzle plug, and the plugging pipe is in interference fit with the gas nozzle plug. The gas nozzle plug is provided with a gas inlet blind hole that is arranged along an axis direction of the gas nozzle plug, and an opening end of the gas inlet blind hole faces the gas inlet connecting pipe.

Abstract: An iron-based metal powder for ultra-high-speed laser cladding comprising chemical composition and mass percentage of the metal powder of: C 0.6˜1.0%, Cr 17.0˜20.0%, Ni 5.0˜6.5%, Mn 2.0˜4.0%, Mo 1.0˜1.5%, Ti 4.0˜6.0%, B 1.0˜1.5%, N 0.08˜0.15%, Si?0.5%, P?0.030%, S?0.030%, balance of Fe and unavoidable impurities, wherein the particle size of the metal powder is 15˜65 ?m, the fluidity is 16˜20 s/50 g.

Abstract: A semiconductor device includes a first substrate and a second substrate. The semiconductor device includes a plurality of conductive pillars between the first and second substrates. The plurality of conductive pillars includes a first conductive pillar having a first width, wherein the first width is substantially uniform along an entire first height of the first conductive pillar, a second conductive pillar having a second width, wherein the second width is substantially uniform along an entire second height of the second conductive pillar, the first width is different from the second width, and the entire first height is equal to the entire second height, and a third conductive pillar having a third width, wherein the third width is substantially uniform along an entire third height of the third conductive pillar, and the third conductive pillar is between the first conductive pillar and the second conductive pillar in the first direction.

Abstract: A module comprises a tray, a mechanical switch, and a linkage system. The tray is configured to receive a circuit board thereon. The mechanical switch is mounted to the tray and movable between an unsecured position and a secured position. The linkage system is mechanically coupled to the mechanical switch, and moves between an unsecured configuration and a secured configuration in response to the mechanical switch moving between the unsecured position and the secured position. When the module is coupled to a computing device and the linkage system is in the secured configuration, the linkage system engages the computing device, such that the module is locked to the computing device. When the module is coupled to the computing device and the linkage system is in the unsecured configuration, the linkage system is disengaged from the computing device, such that the module is unlocked from the computing device.

Abstract: A substrate includes a first doped region having a first type dopant, and a second doped region having a second type dopant and adjacent to the first doped region. A stack is formed that includes first layers and second layers alternating with each other. The first and second layers each have a first and second semiconductor material, respectively. The second semiconductor material is different than the first semiconductor material. A mask element is formed that has an opening in a channel region over the second doped region. A top portion of the stack not covered by the mask element is recessed. The stack is then processed to form a first and a second transistors. The first transistor has a first number of first layers. The second transistor has a second number of first layers. The first number is greater than the second number.

Abstract: A semiconductor device includes a substrate and a semiconductor structure over the substrate. The semiconductor device also includes a first dielectric structure over the substrate, and the first dielectric structure has a first height. The semiconductor device further includes a second dielectric structure over the substrate, and the second dielectric structure has a second height. The second height is smaller than the first height. In addition, the semiconductor device includes a first gate stack wrapped around the first dielectric structure, and the semiconductor structure and the second dielectric structure are spaced apart from the first gate stack. The semiconductor device includes a second gate stack wrapped around the second dielectric structure and the semiconductor structure, and the second gate stack is electrically isolated from the first gate stack.

Abstract: The present application discloses an inertial sensor comprising a proof mass, an anchor, a flexible member and several sensing electrodes. The anchor is positioned on one side of the sensing, mass block in a first axis. The flexible member is connected to the anchor point and extends along the first axis towards the proof mass to connect the proof mass, in which the several sensing electrodes are provided. In this way, the present application can effectively solve the problems of high difficulty in the production and assembly of inertial sensors and poor product reliability thereof.