Abstract: A blackboard eraser cleaning device is provided and includes an outer shell (1). A cover (2) is arranged at the upper part of the outer shell (1), an inner shell (3) is arranged inside the outer shell (1). A clamping mechanism (19) is arranged at the upper end of the inner shell (3). A leaning station (8) is defined inside the clamping mechanism (19). A cylinder (9) is arranged around the clamping mechanism (19). A height adjustment mechanism (10) is arranged inside the outer shell (1). The height adjustment mechanism (10) includes a servo (101) arranged inside the outer shell (1) and located on a side of the inner shell (3). According to the present application, a variety of cleaning modes may be achieved to meet the actual usage of the blackboard eraser.

Abstract: An examination system is provided. The examination system includes an optical detector and analyzer. The optical detector emits a detection light source toward a target object and detects a respondent light which is induced from the target object in response to the detection light source to generate image data. The image data indicates a detection image. The analyzer receives the image data and determines which region of the target object the detection image belongs to according to the image data. When the analyzer determines that the detection image belongs to a specific region of the target object, the analyzer extracts at least one feature of the image data to serve as a basis for classification of the specific region.

Abstract: A method and apparatus for generating a drivable 3D character, an electronic device and a storage medium are disclosed, which relate to the field of artificial intelligence, such as computer vision, deep learning, or the like, and may be applied to 3D vision and other scenarios. The method may include: acquiring a 3D human body mesh model corresponding to a to-be-processed 2D image; performing a skeleton embedding operation on the 3D human body mesh model; and performing a skin binding operation on the 3D human body mesh model after the skeleton embedding operation to obtain a drivable 3D human body mesh model.

Abstract: In some embodiments, the present disclosure relates to an integrated circuit (IC) in which a memory structure comprises an inhibition layer inserted between two ferroelectric layers to create a tetragonal-phase dominant ferroelectric structure. In some embodiments, the ferroelectric structure includes a first ferroelectric layer, a second ferroelectric layer overlying the first ferroelectric layer, and a first inhibition layer disposed between the first and second ferroelectric layers and bordering the second ferroelectric layer. The first inhibition layer is a different material than the first and second ferroelectric layers.

Abstract: The present application relates to the technical field of solar cells, and in particular, to a method for preparing a tunnel oxide layer and an amorphous silicon thin film and a TOPCon cell. The method includes sequentially depositing a tunnel oxide layer, an intrinsic amorphous silicon thin film and a doped amorphous silicon thin film at a deposition temperature of 440° C. to 460° C. by using a PECVD device. A flow rate of silane of depositing the intrinsic amorphous silicon thin film and the doped amorphous silicon thin film is in a range of 2000 sccm to 2500 sccm.

Abstract: A device includes a fin extending from a semiconductor substrate; a gate stack over the fin; a first spacer on a sidewall of the gate stack; a source/drain region in the fin adjacent the first spacer; an inter-layer dielectric layer (ILD) extending over the gate stack, the first spacer, and the source/drain region, the ILD having a first portion and a second portion, wherein the second portion of the ILD is closer to the gate stack than the first portion of the ILD; a contact plug extending through the ILD and contacting the source/drain region; a second spacer on a sidewall of the contact plug; and an air gap between the first spacer and the second spacer, wherein the first portion of the ILD extends across the air gap and physically contacts the second spacer, wherein the first portion of the ILD seals the air gap.

Abstract: Examples disclosed herein relate to device. The device includes a substrate, a plurality of adjacent pixel-defining layer (PDL structures disposed over the substrate, and a plurality of sub-pixels. The PDL structure have a top surface coupled to adjacent sidewalls of the PDL structure. The plurality of sub-pixels are defined by the PDL structures. Each sub-pixel includes an anode, an organic light emitting diode (OLED), a cathode, and an encapsulation layer. The organic light emitting diode (OLED) material disposed over the anode. The OLED material extends over the top surface of the PDL structure past the adjacent sidewalls. The cathode is disposed over the OLED material. The cathode extends over the top surface of the PDL structure past the adjacent sidewalls. The encapsulation layer is disposed over the cathode. The encapsulation layer has a first sidewall and a second sidewall.

Abstract: The disclosure provides a method of active immunotherapy for a cancer patient, comprising administering vaccines against Globo series antigens (i.e., Globo H, SSEA-3 and SSEA-4). Specifically, the method comprises administering Globo H-CRM197 (OBI-833/821) in patients with cancer. The disclosure also provides a method of selecting a cancer patient who is suitable as treatment candidate for immunotherapy. Exemplary immune response can be characterized by reduction of the severity of disease, including but not limited to, prevention of disease, delay in onset of disease, decreased severity of symptoms, decreased morbidity and delayed mortality.

Abstract: A virtual machine backup method, performed by a first host, includes: capturing a request to write data from a virtual machine to a hard disk image file, wherein the request includes written data and input and output location information, copying the written data to a temporary storage area, calculating a first key of the written data, storing the first key, the input and output location information into a first resource location structure, pausing an operation of the virtual machine and generating a second resource location structure according to the first resource location structure, the first key and a second key, and outputting a backup data set to a second host according to the second resource location structure, wherein the backup data set includes the second resource location structure and only one of existing data and the written data when the first key and the second key are the same.

Abstract: An apparatus for wireless communication includes a receiver configured to receive a request for data associated with an Internet-of-things (IoT) service session with an IoT cloud server. The apparatus further includes a transmitter configured to transmit, based on receiving the request and prior to transmitting a response to the request, a message indicating a timing parameter associated with availability of the data. The receiver is further configured to receive an uplink grant at a time that is based on the timing parameter, and the transmitter is further configured to transmit the response to the request based on the uplink grant. The response includes at least a subset of the data.

Abstract: A semiconductor device includes a first active region, a second active region and a dielectric wall. The second active region disposed adjacent to the first active region, and there is a first space between the first active region and the second active region. The dielectric wall is formed within the first space and has a first sidewall and a second sidewall opposite to the first sidewall. The first sidewall and the second sidewall opposite to the first sidewall continuously extend along a plane.

Abstract: A tunnel oxide layer, an N-type bifacial crystalline silicon solar cell and a method for manufacturing the same are provided. The method for manufacturing the tunnel oxide layer includes forming excess -OH on a back side of a silicon wafer, and depositing the tunnel oxide layer on the back side of the silicon wafer by a Plasma Enhanced Atomic Layer Deposition method. The method for manufacturing the N-type bifacial crystalline silicon solar cell can include following steps: performing cleaning, texturing, boron diffusing, and alkaline polishing on an N-type silicon wafer, sequentially forming a P-type doped layer, a passivation layer, and an anti-reflection layer on a front side of the alkaline-polished N-type silicon wafer, and forming a tunnel oxide layer on a back side of the alkaline-polished N-type silicon wafer, followed by forming an N-type doped polysilicon layer, and after annealing, forming an anti-reflection layer.

Abstract: A landmark identification and marking system for a panoramic image is provided. The system includes a storage device and a back-end processor. The storage device stores an initial panoramic image, attitude information, motion tracking information, and a landmark list. The back-end processor performs steps of: adjusting a visual angle of the initial panoramic image to a designated angle according to a difference value between the visual angle and the designated angle; providing the adjusted initial panoramic image to a front-end processor for calculating and generating a panoramic image integrated with landmark objects in the virtual space.

Abstract: Two types of blue light blocking contact lenses are provided and are formed by curing different compositions. The first composition includes a blue light blocking component formed by mixing or reacting a first hydrophilic monomer and a yellow dye, a first colored dye component formed by mixing or reacting a second hydrophilic monomer and a first colored dye, at least one third hydrophilic monomer, a crosslinker, and an initiator. The first colored dye includes a green dye, a cyan dye, a blue dye, an orange dye, a red dye, a black dye, or combinations thereof. The second composition includes a blue light blocking component, at least one hydrophilic monomer, a crosslinker, and an initiator. The blue light blocking component is formed by mixing or reacting glycerol monomethacrylate and a yellow dye. Further, methods for preparing the above contact lenses are provided.

Abstract: A hot bed deformation tolerance structure for a large-sized continuous fiber high-temperature 3D printer is provided. Size changes caused by thermal expansion of a hot bed are compensated through motion coordination of a secured hot bed support assembly and a motion device, especially for an aluminum alloy material. A Z-direction motion structure of this structure is fixedly mounted with a frame and works at room temperature. A compensation motion module is fixedly mounted with a Z axis and incompletely secured with the hot bed support assembly, and works at room temperature with the Z axis. The hot bed support assembly is incompletely secured and partially in a high-temperature chamber, with a maximum working temperature of 300° C. The hot bed support assembly retains motion redundancy in a direction of thermal expansion deformation, tolerates thermal deformation through a linear motion module, and compensates for metal deformation through horizontal motion coordination.

Abstract: Provided are a vibration object monitoring method and apparatus, a computer device, and a storage medium. The method includes: in response to detecting that a vibration object exists in a monitoring video picture for a target monitoring region, a vibration object region in the monitoring video picture is determined, where the vibration object region is a region where the vibration object is located in the monitoring video picture; displacement information of a key point of the vibration object in the vibration object region is recorded; vibration information of the vibration object in the monitoring video picture is determined based on the displacement information; and a vibration object monitoring result for the target monitoring region is generated according to the vibration information. The abnormal vibration monitoring can be performed on the vibration object in the target monitoring region in time according to this method.

Abstract: A semiconductor device package includes a semiconductor die, a first conductive element, a second conductive element, a metal layer, and a first redistribution layer (RDL). The semiconductor die includes a first surface and a second surface opposite to the first surface. The first conductive element is disposed on the second surface of the semiconductor die. The second conductive element is disposed next to the semiconductor die. The metal layer is disposed on the second conductive element and electrically connected to the second conductive element. The first RDL is disposed on the metal layer and electrically connected to the metal layer.

Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes a substrate, a gate structure, a dielectric structure and a contact structure. The substrate has source/drain (S/D) regions. The gate structure is on the substrate and between the S/D regions. The dielectric structure covers the gate structure. The contact structure penetrates through the dielectric structure to connect to the S/D region. A lower portion of a sidewall of the contact structure is spaced apart from the dielectric structure by an air gap therebetween, while an upper portion of the sidewall of the contact structure is in contact with the dielectric structure.

Abstract: A chip-level software and hardware cooperative relay protection device is provided. The device includes: a control chip, wherein a first control unit, a second control unit, and multiple logic circuits are integrated on the control chip; and the logic circuits perform microsecond-level rapid calculation on electrical signals of a protected electrical device, obtain fault feature parameters of the protected electrical device are and transmit same to the first control unit, then perform millisecond-level real-time protection logic determination according to the fault feature parameters of the protected electrical device to obtain relay protection results of the protected electrical device, and protect the protected electrical device by controlling an external relay according to the relay protection results.

Abstract: Provided is a semiconductor device including a substrate having a lower portion and an upper portion on the lower portion; an isolation region disposed on the lower portion of the substrate and surrounding the upper portion of the substrate in a closed path; a gate structure disposed on and across the upper portion of the substrate; source and/or drain (S/D) regions disposed in the upper portion of the substrate at opposite sides of the gate structure; and a channel region disposed below the gate structure and abutting between the S/D regions, wherein the channel region and the S/D regions have different conductivity types, and the channel region and the substrate have the same conductivity type.