Abstract: A pharmaceutical product comprising at least one phenyl uracil-based pharmaceutically active agent or an agent of related structural type and processes for obtaining such product.

Abstract: An aspect of this description relates to a method that includes partially filling an opening in a dielectric material with a high-dielectric-constant material. The method also includes partially filling the opening with a first metal material over the high-dielectric-constant material. The method further includes filling the opening with a capping layer over the first metal material. The method additionally includes partially removing the first metal material and the capping layer in the opening using a wet etching process in a solution including one or more of H2O2, NH4OH, HCl, H2SO4 or diluted HF. The method also includes fully removing the remaining capping layer in the opening using a wet etching process in a solution includes one or more of NH4OH or diluted HF. The method further includes depositing a second metal material in the opening over the remaining first metal material.

Abstract: A pharmaceutical product comprising at least one phenyl uracil-based pharmaceutically active agent or an agent of related structural type and processes for obtaining such product.

Abstract: A method of making a semiconductor device includes forming a titanium nitride layer over a gate dielectric layer. The method further includes performing a silicon treatment on the titanium nitride layer to form at least one silicon monolayer over the titanium nitride layer. The method further includes driving silicon from the at least one silicon monolayer into the titanium nitride layer to form a TiSiON layer.

Abstract: A method of fabricating a metal gate electrode of a field effect transistor includes forming a dielectric layer over an active region, and forming an opening in the dielectric layer. The method further includes partially filling the opening with a high-dielectric-constant material, partially filling the opening with a conformal first metal material over the high-dielectric-constant material, and filling the opening with a capping layer over the first metal material. The method further includes partially removing the first metal material and capping layer in the opening using a wet etching process. The method further includes fully removing the remaining capping layer in the opening using a wet etching process. The method further includes depositing a second metal material in the opening over the remaining first metal material, and planarizing the second metal material.

Abstract: A method of making a semiconductor device includes forming a high-k dielectric layer over a substrate; and forming a titanium nitride layer over the high-k dielectric layer. The method further includes performing a silicon treatment on the titanium nitride layer to form at least one silicon monolayer over the titanium nitride layer. The method further includes annealing the semiconductor device to form a TiSiON layer over a remaining portion of the titanium nitride layer.

Abstract: A method and apparatus for performing hands-free profile (HFP) control and associated computer program product are provided. The method is applied to an electronic device. The method includes: establishing a plurality of Bluetooth (BT)-Asynchronous Connection-Less (ACL) links between the electronic device and a plurality of wireless accessory devices, respectively; and dynamically updating a default-active-device parameter in a device information table to be a unique identification of a specific wireless accessory device of the plurality of wireless accessory devices, in order to maintain a single BT-Synchronous Connection-Oriented (SCO) link between the electronic device and the specific wireless accessory device according to the default-active-device parameter, where the device information table includes unique identifications of the wireless accessory devices of which the BT-ACL links are established with the electronic device.

Abstract: The subject matter described herein includes methods, systems, and computer readable media for intelligent optimization of digital signal processor (DSP) resource utilization in a media gateway. In one method, it is determined in a media gateway whether predetermined conditions exist for DSP-less IP-IP switching for a call. In response to determining that the predetermined conditions exist, DSP-less IP-IP switching is implemented for the call in the media gateway. After implementing the DSP-less IP-IP switching for the call, it is determined whether a predetermined event occurs that requires insertion of DSP resources during the call. In response to determining that the predetermined event occurs, the DSP resources are inserted into the call during the call.

Abstract: A pharmaceutical product comprising at least one phenyl uracil-based pharmaceutically active agent or an agent of related structural type and processes for obtaining such product.

Abstract: A method of making a semiconductor device includes forming a high-k dielectric layer over a substrate; and forming a titanium nitride layer over the high-k dielectric layer. The method further includes performing a silicon treatment on the titanium nitride layer to form at least one silicon monolayer over the titanium nitride layer. The method further includes annealing the semiconductor device to form a TiSiON layer over a remaining portion of the titanium nitride layer.

Abstract: The subject matter described herein includes methods, systems, and computer readable media for intelligent optimization of digital signal processor (DSP) resource utilization in a media gateway. In one method, it is determined in a media gateway whether predetermined conditions exist for DSP-less IP-IP switching for a call. In response to determining that the predetermined conditions exist, DSP-less IP-IP switching is implemented for the call in the media gateway. After implementing the DSP-less IP-IP switching for the call, it is determined whether a predetermined event occurs that requires insertion of DSP resources during the call. In response to determining that the predetermined event occurs, the DSP resources are inserted into the call during the call.

Abstract: A semiconductor device including a substrate having a source region, a drain region, and a channel region disposed between the source region and the drain region. Additionally, the semiconductor device includes a high-k dielectric layer formed over the channel region, an n-metal formed over the high-k dielectric layer and a barrier layer formed between the high-k dielectric layer and the n-metal, the barrier layer including a layer of annealed silicon.

Abstract: Buffer layer and method of forming the buffer layer, the method including forming a high-k dielectric layer, forming a titanium nitride layer over the high-k dielectric layer, forming a silicon layer on the titanium nitride layer, annealing the silicon layer into the titanium nitride layer to form an annealed silicon layer and forming an n-metal over the high-k dielectric layer.

Abstract: A method and apparatus for performing hands-free profile (HFP) control and associated computer program product are provided. The method is applied to an electronic device. The method includes: establishing a plurality of Bluetooth (BT)-Asynchronous Connection-Less (ACL) links between the electronic device and a plurality of wireless accessory devices, respectively; and dynamically updating a default-active-device parameter in a device information table to be a unique identification of a specific wireless accessory device of the plurality of wireless accessory devices, in order to maintain a single BT-Synchronous Connection-Oriented (SCO) link between the electronic device and the specific wireless accessory device according to the default-active-device parameter, where the device information table includes unique identifications of the wireless accessory devices of which the BT-ACL links are established with the electronic device.

Abstract: A method of traffic condition notification, adapted to a traffic information center, the method has steps are: receiving at least one travel information in a observing period, the travel information includes at least a travel time which had been taken on a predetermined distance; according to at least two travel information, determining a trend; and updating the travel information based on the trend, and broadcasting the new traffic information.

Abstract: A method of fabricating a metal gate electrode of a field effect transistor includes forming a dielectric layer over an active region, and forming an opening in the dielectric layer. The method further includes partially filling the opening with a high-dielectric-constant material, partially filling the opening with a conformal first metal material over the high-dielectric-constant material, and filling the opening with a capping layer over the first metal material. The method further includes partially removing the first metal material and capping layer in the opening using a wet etching process. The method further includes fully removing the remaining capping layer in the opening using a wet etching process. The method further includes depositing a second metal material in the opening over the remaining first metal material, and planarizing the second metal material.

Abstract: A method for fabricating the gate dielectric layer comprises forming a high-k dielectric layer over a substrate; forming an oxygen-containing layer on the high-k dielectric layer by an atomic layer deposition process; and performing an inert plasma treatment on the oxygen-containing layer.

Abstract: An integrated circuit fabrication is disclosed, and more particularly a field effect transistor with a low resistance metal gate electrode is disclosed. An exemplary structure for a metal gate electrode of a field effect transistor comprises a lower portion formed of a first metal material, wherein the lower portion has a recess, a bottom portion and sidewall portions, wherein each of the sidewall portions has a first width; and an upper portion formed of a second metal material, wherein the upper portion has a protrusion and a bulk portion, wherein the bulk portion has a second width, wherein the protrusion extends into the recess, wherein a ratio of the second width to the first width is from about 5 to 10.

Abstract: A light emitting ribbon comprises a main body and an adapter, and the main body is a flexible transparent strip-shaped ribbon having a plurality of LED chips, and the adapter is coupled to the main body and electrically coupled to an external circuit module to obtain a working voltage to drive the LED chips to emit light. Therefore, the integrally formed light emitting ribbon can be sewed, hot-glued, or installed onto clothing through a connecting portion, so that the clothing has a light emitting function.

Abstract: Buffer layer and method of forming the buffer layer, the method including forming a high-k dielectric layer, forming a titanium nitride layer over the high-k dielectric layer, forming a silicon layer on the titanium nitride layer, annealing the silicon layer into the titanium nitride layer to form an annealed silicon layer and forming an n-metal over the high-k dielectric layer.