Abstract: A display driving circuit, a calibration module, and an associated calibration method are provided. The display driving circuit includes an internal clock circuit and the calibration module. The internal clock circuit generates an internal clock signal. The calibration module includes a counting circuit and a trimming circuit. The counting circuit counts pulses of a reference clock signal to generate a detected reference-clock count and counts pulses of the internal clock signal to generate a detected internal-clock count. The trimming circuit generates a calibration signal to adjust frequency of the internal clock signal when a predefined condition is satisfied. The predefined condition is related to comparison between a first preset count and one of the detected reference-clock count and the detected internal-clock count.

Abstract: A display driving circuit, a calibration module, and an associated calibration method are provided. The display driving circuit includes an internal clock circuit and the calibration module. The internal clock circuit generates an internal clock signal. The calibration module includes a counting circuit and a trimming circuit. The counting circuit counts pulses of a reference clock signal to generate a detected reference-clock count and counts pulses of the internal clock signal to generate a detected internal-clock count. The trimming circuit generates a calibration signal to adjust frequency of the internal clock signal when a predefined condition is satisfied. The predefined condition is related to comparison between a first preset count and one of the detected reference-clock count and the detected internal-clock count.

Abstract: A power-up initial circuit includes a power-up control unit, a first switch and a second switch. The power-up control unit is used for receiving a high voltage start-up signal, and generating a first power-up control signal. The first switch has a first terminal for receiving an external voltage, a second terminal for coupling to the power-up control circuit for receiving the first power-up control signal, and a third terminal. The second switch has a first terminal coupled to the third terminal of the first switch, a second terminal for coupling to the power-up control circuit for receiving the first power-up control signal, and a third terminal for coupling to a high voltage generator.

Abstract: A current mirror with immunity for the variation of threshold voltage includes raising the voltage difference between the gate and the source of a MOS in the current source, and increasing the channel length of the MOS for limiting the generated reference current.

Abstract: A double-swing clock generator includes a first double-swing clock generation circuit and a second double-swing clock generation circuit. The first double-swing clock generation circuit is used for receiving a first voltage, a second voltage, a first clock, an inverse first clock, and a third voltage, and outputting a first double-swing clock. The second double-swing clock generation circuit is used for receiving a fourth voltage, the second voltage, the first clock, the inverse first clock, and the third voltage, and outputting a second double-swing clock.

Abstract: An output stage circuit includes a first P-type metal-oxide-semiconductor transistor, a second P-type metal-oxide-semiconductor transistor, an N-type metal-oxide-semiconductor transistor, and a current source. A voltage of a third terminal of the first P-type metal-oxide-semiconductor transistor is a first voltage minus a voltage drop between a first terminal and a second terminal of the first P-type metal-oxide-semiconductor transistor. The N-type metal-oxide-semiconductor transistor is coupled between the third terminal of the first P-type metal-oxide-semiconductor transistor and the current source. A second terminal of the second P-type metal-oxide-semiconductor transistor is coupled to the third terminal of the first P-type metal-oxide-semiconductor transistor.

Abstract: A double-swing clock generator includes a first double-swing clock generation circuit and a second double-swing clock generation circuit. The first double-swing clock generation circuit is used for receiving a first voltage, a second voltage, a first clock, an inverse first clock, and a third voltage, and outputting a first double-swing clock. The second double-swing clock generation circuit is used for receiving a fourth voltage, the second voltage, the first clock, the inverse first clock, and the third voltage, and outputting a second double-swing clock.

Abstract: A power-up initial circuit includes a power-up control unit, a first switch and a second switch. The power-up control unit is used for receiving a high voltage start-up signal, and generating a first power-up control signal. The first switch has a first terminal for receiving an external voltage, a second terminal for coupling to the power-up control circuit for receiving the first power-up control signal, and a third terminal. The second switch has a first terminal coupled to the third terminal of the first switch, a second terminal for coupling to the power-up control circuit for receiving the first power-up control signal, and a third terminal for coupling to a high voltage generator.

Abstract: An output stage circuit includes a first P-type metal-oxide-semiconductor transistor, a second P-type metal-oxide-semiconductor transistor, an N-type metal-oxide-semiconductor transistor, and a current source. A voltage of a third terminal of the first P-type metal-oxide-semiconductor transistor is a first voltage minus a voltage drop between a first terminal and a second terminal of the first P-type metal-oxide-semiconductor transistor. The N-type metal-oxide-semiconductor transistor is coupled between the third terminal of the first P-type metal-oxide-semiconductor transistor and the current source. A second terminal of the second P-type metal-oxide-semiconductor transistor is coupled to the third terminal of the first P-type metal-oxide-semiconductor transistor.

Abstract: A current mirror with immunity for the variation of threshold voltage includes raising the voltage difference between the gate and the source of a MOS in the current source, and increasing the channel length of the MOS for limiting the generated reference current.