Current mirror with immunity for the variation of threshold voltage and the generation method thereof

- Etron Technology, Inc.

A current mirror with immunity for the variation of threshold voltage includes raising the voltage difference between the gate and the source of a MOS in the current source, and increasing the channel length of the MOS for limiting the generated reference current.

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Description
BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a current source with immunity for the variation of threshold voltage, and more particularly, to a current source for lowering the impact of the threshold voltage on the magnitude of the current, by increasing the voltage difference between the gate and the source of the current source.

2. Description of the Prior Art

Please refer to FIG. 1. FIG. 1 is a diagram illustrating a conventional current mirror. As shown in FIG. 1, the gate (control end) of the P-type Metal Oxide Semiconductor (PMOS) transistor QP1 is utilized to receive a control voltage VG, the source (first end) of the PMOS transistor QP1 is coupled to a voltage source VDD, and the drain (second end) of the PMOS transistor QP1 is utilized to output a current I1. The gate (control end) of the PMOS transistor QP2 is utilized to receive the control voltage VG, the source (first end) of the PMOS transistor QP2 is coupled to the voltage source VDD, and the drain (second end) of the PMOS transistor QP2 is utilized to output a current I2. The conventional current mirror utilizes the control voltage VG to bias the PMOS transistor QP1 for generating the reference current source I1, and then the ratio of the channel aspect ratios (width/length, W/L) of the PMOS transistors QP1 and QP2 is utilized to generate the current I2, which is proportional to the reference current source I1. For instance, if the channel aspect ratio (W1/L1) of the PMOS transistor QP1 is “1” and the channel aspect ratio (W2/L2) of the PMOS transistor QP2 is “2”, then when the reference current source I1 is 1 amp, the current I2 is generated to be 2 amps.

The conventional current mirror operates the PMOS transistor QP1 in the saturation region. In other words, the relationship between the current I1 and the voltage VG is described in the formulas as below:
I1=½×K×(W1/L1)×(VSG−VT)2  (1);
=½×K×(W1/L1)×(VDD−VG−VT)2  (2);
where the voltage VSG represents the voltage difference, which is equivalent to the voltage of (VDD−VG), between the source and the gate of the PMOS transistor QP1, the voltage VT represents the threshold voltage of the PMOS transistor QP1, and K represents a process variable. Hence, the magnitude of the reference current source I1 is related to the channel aspect ratio (W1/L1) of the PMOS transistor QP1, the voltage difference VSG (equivalent to (VDD−VG)), and the threshold voltage VT.

Due to the magnitude of the threshold voltage VT is easily affected by the processing, when under different processing, the magnitude of the current source I1 is still affected by the threshold voltage VT, even with the same voltage source VDD, the same voltage difference VSG between the source and the gate, and the same channel aspect ratio (W/L). In this way, the magnitude of the current source differs from the desired.

SUMMARY OF THE INVENTION

The present invention provides a current source for driving a first Metal Oxide Semiconductor (MOS) transistor to generate a predetermined current. The current source comprises a feedback circuit. The feedback circuit comprises a second MOS transistor, a third MOS transistor, a fourth MOS transistor, a fifth MOS transistor, a first resistor coupled between the ground end and the control end of the fifth MOS transistor, and a MOS circuit. The second MOS transistor comprises a first end coupled to a voltage source, a control end, and a second end coupled to the control end of the second MOS transistor. The third MOS transistor comprises a first end coupled to the voltage source, a control end coupled to the control end of the second MOS transistor, and a second end. The fourth MOS transistor comprises a first end coupled to the second end of the third MOS transistor, a control end for receiving a control voltage, and a second end coupled to a ground end. The fifth MOS transistor comprises a first end coupled to the second end of the second MOS transistor, a control end for outputting the control voltage, and a second end coupled to the ground end. The MOS circuit comprises a first end coupled to the voltage source, a control end coupled to the first end of the fourth MOS transistor, and a second end coupled to the control end of the fifth MOS transistor.

The present invention further provides a current source. The current source comprises a first MOS transistor for generating a predetermined current, a feedback circuit, a first resistor coupled to a ground end and the output end of the feedback circuit, and a MOS circuit. The feedback circuit comprises a first end coupled to a voltage source, a control end for receiving a control voltage, an output end for outputting the control voltage, and a feedback end coupled to a control end of the first MOS transistor. The MOS circuit comprises a first end coupled to the voltage source, a control end coupled to the feedback end of the feedback circuit, and a second end coupled to the output end of the feedback circuit.

The present invention further provides a method for generating current with immunity for variation of threshold voltage. The method comprises providing a first MOS transistor for a first end of the first MOS transistor to be coupled to a voltage source, providing a MOS transistor circuit to be coupled to the first MOS transistor and the voltage source, providing a feedback circuit to be coupled to the voltage source, and inputting a control voltage to the feedback circuit for control a current with a predetermined magnitude passing through the MOS transistor circuit, as well as control a voltage of the feedback end, wherein the feedback end is coupled to a control end of the first MOS transistor. The feedback circuit comprises a feedback end coupled between the MOS transistor circuit and the first MOS transistor.

These and other objectives of the present invention will no doubt become obvious to those of ordinary skill in the art after reading the following detailed description of the preferred embodiment that is illustrated in the various figures and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram illustrating a conventional current mirror.

FIG. 2 is a diagram illustrating the current source 200 for reducing the affect of the threshold voltage according to the first embodiment of the present invention.

FIG. 3 is a diagram illustrating the current source 300 for reducing the impact of the threshold voltage according to the second embodiment of the present invention.

FIG. 4 is a diagram illustrating the current source 400 for reducing the impact of the threshold voltage according to the third embodiment of the present invention.

FIG. 5 is a flowchart illustrating a method 500 of generating the current with immunity to the variation of the threshold voltage of the present invention.

 DETAILED DESCRIPTION

Hence, the present invention raises the voltage difference VSG between the source and the gate of the MOS transistor for reducing the impact of varying the threshold voltage VT, according to formulas (1) and (2) of the current of the MOS transistor operating in the saturation region. However, to keep the reference current source I1 generating a fixed current without changing the process variable K, the channel aspect ratio (W/L) of the MOS transistor needs to be reduced in order to keep the current of the reference current source I1 in the same range.

Please refer to FIG. 2. FIG. 2 is a diagram illustrating the current source 200 for reducing the affect of the threshold voltage according to the first embodiment of the present invention. The current source 200 comprises a feedback circuit 210, a PMOS transistor QP1, and a resistor R1. The feedback circuit 210 comprises two PMOS transistors QPX and QPY, two N-channel Metal Oxide Semiconductor (NMOS) transistors QN1 and QN2, and a resistor R2. The current source 200 enables the PMOS transistors QP2, QP3 . . . QPN to replicate the currents I2, I3 . . . IN, in proportion to the magnitude of the reference current source I1.

In the feedback circuit 210, the source (first end) of the PMOS transistor QPX is coupled to the voltage source VDD, the gate (control end) of the PMOS transistor QPX is coupled to the drain (to ensure operation in the saturation region) of the PMOS transistor QPX, and the drain (second end) of the PMOS transistor QPX is coupled to the drain (first end) of the NMOS transistor QN1. The source (first end) of the PMOS transistor QPY is coupled to the voltage source VDD, the gate (control end) of the PMOS transistor QPY is coupled to the gate of the PMOS transistor QPX, and the drain (second end) of the PMOS transistor QPY is coupled to the drain (first end) of the NMOS transistor QN2. The source (second end) of the NMOS transistor QN1 is coupled to the resistor R2, the gate (control end) of the NMOS transistor QN1 is coupled to the resistor R1, and the drain (first end) of the NMOS transistor QN1 is coupled to the drain of the PMOS transistor QPX. The source (second end) of the NMOS transistor QN2 is coupled to the resistor R2, the gate (control end) of the NMOS transistor QN2 is utilized to receive a control voltage V1, and the drain (first end) of the NMOS transistor QN2 is coupled to the drain of the PMOS transistor QPY. The resistor R2 is coupled between the NMOS transistors QN1 and QN2, and the ground end (VSS).

In the current source 200, the source (first end) of the PMOS transistor QP1 is coupled to the voltage source VDD, the gate (control end) of the PMOS transistor QP1 is coupled to the drain (first end) of the NMOS transistor QN2 of the feedback circuit 210, and the drain (second end) of the PMOS transistor QP1 is coupled to the resistor R1. The resistor R1 is coupled between the drain of the PMOS transistor QP1, the gate (control end) of the NMOS transistor QN1, and the ground end. In this way, the voltage across the resistor R1 equals the control voltage V1. Hence the magnitude of the reference current source I1 is limited by the control voltage V1 and the resistance of the resistor R1 (I1=V1/R1). Therefore, the feedback circuit 210 controls the magnitude of the voltage difference VSG according to the magnitude of the control voltage VG for stabilizing the reference current source I1 at (V1/R1) with the negative feedback manner.

In the first embodiment of the present invention, the threshold voltage VT1 of the PMOS transistor QP1 is designed to be significantly higher than the threshold voltage VT2 of the PMOS transistors QP2˜QPN. Hence, under the condition that the reference current source I1 is fixed and the channel aspect ratio (W1/L1) of the PMOS transistors QP1˜QPN is fixed, the voltage VSG across the PMOS transistor QP1 is relatively larger than those of the PMOS transistors QP2˜QPN such that the replicated currents I2˜IN can be unaffected by the threshold voltage VT2. More particularly, when the threshold voltage VT1 equals to the threshold voltage VT2, the voltage VSG across the PMOS transistor QP1 can not be raised (when the magnitude of the reference current source I1 is fixed to (V1/R1), and the channel aspect ratio (W1/L1) of the PMOS transistors QP1˜QPN is also fixed), according to formula (1): I1=½×K×(W1/L1)×(VSG−VT1)2. Hence, the first embodiment of the present invention demonstrates that increasing the threshold voltage VT1 increases the voltage difference VSG accordingly. In FIG. 2, as the voltage VG decreases, the voltage VSG across the PMOS transistors QP2˜QPN increases accordingly. Also, due to the threshold voltage VT2 of the PMOS transistors QP2˜QPN is designed to be relatively smaller than the threshold voltage VT1, the variance of the threshold voltage VT2 has less impact on the raised voltage VSG, consequently causing the replicated currents I2˜IN to be controlled within a desired range.

Please refer to FIG. 3. FIG. 3 is a diagram illustrating the current source 300 for reducing the impact of the threshold voltage according to the second embodiment of the present invention. The current source 300 comprises a feedback circuit 310, a PMOS transistor QP1, and a resistor R1. The feedback circuit 310 comprises two PMOS transistors QPX and QPY, two NMOS transistors QN1 and QN2, and a resistor R2. The current source 300 enables the PMOS transistors QP2, QP3 . . . QPN to replicate currents I2, I3 . . . IN, in proportion to the magnitude of the reference current source I1.

Differed from the first embodiment, in the second embodiment of the present invention, the threshold voltages of the PMOS transistors QP1˜QPN are designed to be as the same as the threshold voltage VT1, and the channel aspect ratio (W2/L2) of the PMOS transistor QP1 is designed to be significantly lowered than the channel aspect ratios of the PMOS transistor QP2˜QPN. Hence, under the condition that the magnitude of the reference current source I1 is fixed and the channel aspect ratio (W2/L2) of the PMOS transistor QP1 is significantly lower than the channel aspect ratio (W1/L1) of the PMOS transistors QP2˜QPN, the voltage VSG across the PMOS transistor QP1 can be raised such that the replicated currents I2˜IN can be unaffected by the threshold voltage VT1. More particularly, when the channel aspect ratio (W2/L2) equals to the channel aspect ratio (W1/L1), the voltage VSG across the PMOS transistor QP1 cannot be raised (when the magnitude of the reference current source I1 is fixed to (V1/R1) and the channel aspect ratio (W1/L1) of the PMOS transistors QP1˜QPN is also fixed), according to formula (1): I1=½×K×(W1/L1)×(VSG−VT1)2. When the channel aspect ratio is reduced to (W2/L2), the voltage VSG across the PMOS transistor QP1 can be raised to keep the reference current source I1 to be fixed to (V1/R1), according to formula (1): I1=½×K×(W2/L2)×(VSG−VT1)2. Hence, the second embodiment of the present invention demonstrates that decreasing the channel aspect ratio of the PMOS transistor QP1 increases the voltage difference VSG. As shown in FIG. 3, as the voltage difference VSG decreases, the voltage VSG across the PMOS transistors QP2˜QPN increases and the variance of the threshold voltage VT1 of the PMOS transistors QP2˜QPN has less impact on the raised voltage VSG, consequently causing the replicated currents I2˜IN to be controlled within a desired range.

In addition, there are two ways to lower the channel aspect ratio of the PMOS transistor QP1; one way is to increase the channel length of the PMOS transistor QP1, causing the channel aspect ratio of the PMOS transistor QP1 to decrease accordingly; the other way is to decrease the channel width of the PMOS transistor QP1, causing the channel aspect ratio to decrease accordingly.

Please refer to FIG. 4. FIG. 4 is a diagram illustrating the current source 400 for reducing the impact of the threshold voltage according to the third embodiment of the present invention. The current source 400 comprises a feedback circuit 410, N PMOS transistors QP11˜QP1N, and a resistor R1. The feedback circuit 410 comprises two PMOS transistors QPX and QPY, two NMOS transistors QN1 and QN2, and a resistor R2. The current source 400 enables the PMOS transistors QP2, QP3 . . . QPN to replicate currents I2, I3 . . . IN, in proportion to the magnitude of the reference current source I1.

In the current source 400, the PMOS transistor QP1 of the first embodiment of FIG. 2 is replaced by N PMOS transistors QP11˜QP1N. In the current source 400, the source (first end) of the PMOS transistor QP11 is coupled to the voltage source VDD, the gate (control end) of the PMOS transistor QP11 is coupled to the drain (first end) of the NMOS transistor QN2 of the feedback circuit 410, and the drain (second end) of the PMOS transistor QP11 is coupled to the source (first end) of the PMOS transistor QP12; the source (first end) of the PMOS transistor QP12 is coupled to the drain of the of the PMOS transistor QP11, the gate (control end) of the PMOS transistor QP12 is coupled to the drain (first end) of the NMOS transistor QN2 of the feedback circuit 410, and the drain (second end) of the PMOS transistor QP12 is coupled to the source (first end) of the PMOS transistor QP13 . . . , and so on; the source (first end) of the PMOS transistor QP1N is coupled to the drain of the PMOS transistor QP1(N−1), the gate (control end) of the PMOS transistor QP1N is coupled to the drain (first end) of the NMOS transistor QN2 of the feedback circuit 410, and the drain (second end) of the PMOS transistor QP1N is coupled to the resistor R1. The resistor R1 is couple between the drain of the PMOS transistor QP1N, the gate (control end) of the NMOS transistor QN1, and the ground end. Hence, the voltage across the resistor R1 also equals the control voltage V1. Hence, the magnitude of the reference current source I1 is limited to (V1/R1). Therefore, the feedback circuit 410 controls the magnitude of the voltage difference VSG according to the magnitude of the control voltage VG for stabilizing the reference current source I1 at (V1/R1) with the negative feedback manner.

In the third embodiment of the present invention, the threshold voltage of the PMOS transistor QP11˜QP1N and QP2˜QPN are designed to have the same as the threshold voltage VT1 and the same channel aspect ratio (W1/L1). Since the PMOS transistors QP11˜QP1N are connected in series, the serial-connected PMOS transistors QP11˜QP1N can be equivalent to a single PMOS transistor, with an effective channel length of a multiple of N. In other words, in the equivalent MOS transistor, the channel aspect ratio changes to a multiple of 1/N (which implies decreasing to a multiple of 1/N). Hence, effectively speaking, the third embodiment of the present invention is similar to the second embodiment of the present invention in terms of lowering the channel aspect ratio to increase the voltage difference VSG. In other words, under the condition that the reference current source I1 is kept constant and the channel aspect ratio (W1/NL1) of the PMOS transistors QP11˜QP1N is significantly lower than the channel aspect ratios (W1/L1) of the PMOS transistors QP2˜QPN, the voltage VSG across the PMOS transistors QP11˜QPN can be raised, consequently avoiding the replicated currents I2˜IN being affected by the threshold voltage VT1 and being controlled within a desired range.

Please refer to FIG. 5. FIG. 5 is a flowchart illustrating a method 500 of generating the current with immunity to the variation of the threshold voltage of the present invention. The steps of the method are explained below:

Step 510: Start;

Step 502: Provide a first MOS transistor to be coupled to a voltage source;

Step 503: Provide a MOS circuit to be coupled to the first MOS transistor and the voltage source;

Step 504: Provide a feedback circuit to be coupled to the voltage source, wherein the feedback circuit comprises a feedback end coupled between the MOS circuit and the first MOS transistor;

Step 505: Input a control voltage to the feedback circuit for control a current with a predetermined magnitude passing through the MOS circuit, as well as control a voltage of the feedback end;

Step 506: End.

In step 503, the MOS transistor comprises a sixth MOS transistor. The channel aspect ratio of the sixth MOS transistor can be adjusted to be lower than the channel aspect ratio of the first MOS transistor, or, the threshold voltage of the sixth MOS transistor can be adjusted to be higher than the threshold voltage of the first MOS transistor.

In step 503, the MOS circuit can also be realized with a plurality of MOS transistors connected in series. The channel aspect ratio of every MOS transistor of the plurality of MOS transistors connected in series can be adjusted to approximately equal to the channel aspect ratio of the first MOS transistor.

To sum up, the current source and the method for generating the current of the present invention can effectively resist the impact of the variation of the threshold voltage during processing to the current stability, providing great convenience.

Those skilled in the art will readily observe that numerous modifications and alterations of the device and method may be made while retaining the teachings of the invention.

Claims

1. A current source, for driving a Metal Oxide Semiconductor (MOS) circuit to generate a predetermined current, the current source comprising:

a feedback circuit, comprising: a second MOS transistor, comprising: a first end, coupled to a voltage source; a control end; and a second end, coupled to the control end of the second MOS transistor; a third MOS transistor, comprising: a first end, coupled to the voltage source; a control end, coupled to the control end of the second MOS transistor; and a second end; a fourth MOS transistor, comprising: a first end, coupled to the second end of the third MOS transistor, for outputting a feedback voltage; a control end, for receiving a control voltage; and a second end; and a fifth MOS transistor, comprising: a first end, coupled to the second end of the second MOS transistor; a control end, for outputting an output voltage, wherein the output voltage is equal to the control voltage; and a second end; a first resistor, coupled between the ground end and the control end of the fifth MOS transistor; and the MOS circuit, comprising a plurality of MOS transistors connected in series; a first end of a sixth MOS transistor of the plurality of MOS transistors connected in series being coupled to the voltage source; a control end of each of the plurality of MOS transistors being directly coupled to the first end of the fourth MOS transistor, and controlled by the feedback voltage; and a second end of a seventh MOS transistor of the plurality of MOS transistors connected in series being coupled to the control end of the fifth MOS transistor; wherein the output voltage of the control end of the fifth MOS transistor is not influenced by series source/drain voltages of the plurality of MOS transistors, and a decrease of the feedback voltage is dependent on an equivalent channel length of the plurality of MOS transistors, not dependent on a process of the plurality of MOS transistors or a threshold voltage of the sixth MOS transistor.

2. The current source of claim 1, wherein threshold voltage of the sixth MOS transistor is higher than threshold voltage of the first MOS transistor.

3. The current source of claim 1, wherein the first, second, third and sixth MOS transistors are P-type Metal Oxide Semiconductor (PMOS) transistors.

4. The current source of claim 1, wherein channel aspect ratio of the sixth MOS transistor is lower than channel aspect ratio of the first MOS transistor.

5. The current source of claim 1, wherein the fourth and fifth MOS transistors are N-type Metal Oxide Semiconductor (NMOS) transistors.

6. The current source of claim 1, further comprising a resistor, coupled between the second end of the fourth MOS transistor, the second end of the fifth MOS transistor, and the ground end.

7. The current source of claim 1, wherein the channel aspect ratio of each MOS transistor of the plurality of MOS transistors connected in series is approximately equal to the channel aspect ratio of the first MOS transistor.

8. The current source of claim 1, wherein threshold voltage of each MOS transistor of the plurality of MOS transistors connected in series is approximately equal to the threshold voltage of the first MOS transistor.

9. A current source, comprising:

a feedback circuit, comprising: a first end, coupled to a voltage source; a control end, for receiving a control voltage; an output end, for outputting an output voltage, wherein the output voltage is equal to the control voltage; and a feedback end for outputting a feedback voltage;
a first resistor, coupled to a ground end and the output end of the feedback circuit; and
a MOS circuit, comprising a plurality of MOS transistors connected in series for generating a predetermined current; a first end of a sixth MOS transistor of the plurality of MOS transistors connected in series being coupled to the voltage source; a control end of each of the plurality of MOS transistors being directly coupled to the feedback end of the feedback circuit, and controlled by the feedback voltage; and a second end of a seventh MOS transistor of the plurality of MOS transistors connected in series being coupled to the output end of the feedback circuit; wherein the output voltage of the control end of the fifth MOS transistor is not influenced by series source/drain voltages of the plurality of MOS transistors, and a decrease of the feedback voltage is dependent on an equivalent channel length of the plurality of MOS transistors, not dependent on a process of the plurality of MOS transistors or a threshold voltage of the sixth MOS transistor.

10. The current source of claim 9, wherein threshold voltage of the sixth MOS transistor is higher than threshold voltage of the first MOS transistor.

11. The current source of claim 9, wherein aspect ratio of the sixth MOS transistor is lower than aspect ratio of the first MOS transistor.

12. The current source of claim 9, further comprising a resistor coupled between a second end of the feedback circuit and the ground end.

13. The current source of claim 9, wherein the channel aspect ratio of each MOS transistor of the plurality of MOS transistors connected in series is approximately equal to the channel aspect ratio of the first MOS transistor.

14. The current source of claim 9, wherein threshold voltage of each MOS transistor of the plurality of MOS transistors connected in series is approximately equal to the threshold voltage of the first MOS transistor.

15. A method for generating current with immunity for variation of threshold voltage, the method comprising:

providing a first MOS transistor for a first end of the first MOS transistor to be coupled to a voltage source;
providing a MOS transistor circuit to be connected to the first MOS transistor in series, the MOS transistor circuit comprising a plurality of MOS transistors connected in series;
providing a feedback circuit to be coupled to the voltage source, the feedback circuit comprising a feedback end directly coupled to control ends of the plurality of MOS transistors of the MOS transistor circuit and a control end of the first MOS transistor; and
inputting a control voltage to the feedback circuit for generating an output voltage of the feedback circuit to control a current with a predetermined magnitude passing through the MOS transistor circuit, as well as controlling a voltage of the feedback end, wherein the control ends of the plurality of the MOS transistors of the MOS transistor circuit and the control end of the first MOS transistor are controlled by the voltage of the feedback end;
wherein the output voltage of the feedback circuit is not influenced by series source/drain voltages of the plurality of MOS transistors and the first MOS transistor, and a decrease of the voltage of the feedback end is dependent on an equivalent channel length of the plurality of MOS transistors and the first MOS transistor, not dependent on a process of the plurality of MOS transistors or a threshold voltage of the first MOS transistor.

16. The method of claim 15, wherein the MOS transistor circuit comprises a sixth MOS transistor, and the method further comprises:

adjusting channel aspect ratio of the sixth MOS transistor to be lower than channel aspect ratio of the first MOS transistor.

17. The method of claim 15, wherein the MOS transistor circuit comprises a sixth MOS transistor, and the method further comprises:

adjusting threshold voltage of the sixth MOS transistor to be higher than threshold voltage of the first MOS transistor.

18. The method of claim 15, further comprising:

adjusting channel aspect ratio of every MOS transistor of the plurality of MOS transistors connected in series to approximately equal to channel aspect ratio of the first MOS transistor.
Referenced Cited
U.S. Patent Documents
6008632 December 28, 1999 Sasaki
6624685 September 23, 2003 Shih et al.
7019585 March 28, 2006 Wilson et al.
7663420 February 16, 2010 Araki et al.
7746163 June 29, 2010 Akita
Patent History
Patent number: 8823446
Type: Grant
Filed: May 24, 2009
Date of Patent: Sep 2, 2014
Patent Publication Number: 20100052646
Assignee: Etron Technology, Inc. (Hsinchu)
Inventors: Chun Shiah (Hsinchu), Hao-Jan Yang (Yunlin County), Ho-Yin Chen (Hsinchu County), Kuo-Chen Lai (Changhua County)
Primary Examiner: Sibin Chen
Application Number: 12/471,403
Classifications
Current U.S. Class: Using Field-effect Transistor (327/543)
International Classification: G05F 1/10 (20060101); G05F 1/56 (20060101); G05F 3/26 (20060101);