Abstract: Various embodiments of the present disclosure are directed towards a method for forming a semiconductor structure. The method includes forming a stack of semiconductor layers comprising a plurality of first semiconductor layers and a plurality of second semiconductor layers over a semiconductor substrate. A first stack of masking layers is formed over the stack of semiconductor layers with a first width and a second stack of masking layers is formed laterally offset from the stack of semiconductor layers with a second width less than the first width. A patterning process is performed on the semiconductor substrate and the stack of semiconductor layers, thereby defining a first fin structure laterally adjacent to a second fin structure. The first fin structure has the first width and the second fin structure has the second width. The stack of semiconductor layers directly overlies the first fin structure and has the first width.

Abstract: A light-emitting diode includes a first type semiconductor layer, a stress relief layer disposed on the first type semiconductor layer and including at least one first repeating unit containing a first well layer and a first barrier layer that are alternately stacked, an active layer disposed on the stress relief layer and including at least one second repeating unit containing a second well layer and a second barrier layer that are alternately stacked, a second type semiconductor layer disposed on the active layer, a first electrode electrically connected to the first type semiconductor layer, and a second electrode electrically connected to the second type semiconductor layer. The first well layer is made of an In-containing material. The second well layer is made of an In-containing material. The second barrier layer is formed with multiple sub-layers, each of which is made of an Al-containing material.

Abstract: A semiconductor transistor device includes a channel structure, a gate structure, a first source/drain epitaxial structure, a second source/drain epitaxial structure, a gate contact, and a back-side source/drain contact. The gate structure wraps around the channel structure. The first source/drain epitaxial structure and the second source/drain epitaxial structure are disposed on opposite endings of the channel structure. The gate contact is disposed on the gate structure. The back-side source/drain contact is disposed under the first source/drain epitaxial structure. The first source/drain epitaxial structure has a concave bottom surface contacting the back-side source/drain contact.

Abstract: Disclosed are a semiconductor device, a preparation method therefor and electrical equipment thereof. The semiconductor device includes: a silicon substrate on which an emitter, a gate, and a collector are formed; a bootstrap electrode formed on the silicon substrate; and an insulating layer, formed on the silicon substrate and disposed between the emitter and the bootstrap electrode. A bootstrap capacitor is formed between the emitter and the bootstrap electrode.

Abstract: A circuit board includes a conductive metal layer, at least one insulating layer, at least one thermally conductive insulating layer and a heat dissipation element. The conductive metal layer is mainly used to transmit electronic signals. The insulating layer is connected to the conductive metal layer. The thermally conductive insulating layer is sandwiched between the conductive metal layer and the insulating layer, and thermally contacts the conductive metal layer, and is used for thermally conducting the heat of the conductive metal layer. The heat dissipation element is in thermal contact with the thermally conductive insulating layer, and is used to conduct the heat of the thermally conductive insulating layer to the outside through a heat dissipation channel.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed. An exemplary semiconductor device comprises a dielectric layer formed over a conductive feature; a semiconductor stack formed over the dielectric layer, wherein the semiconductor stack including semiconductor layers stacked up and separated from each other; a first metal gate structure and a second metal gate structure formed over a channel region of the semiconductor stack, wherein the first metal gate structure and the second metal gate structure wrap each of the semiconductor layers of the semiconductor stack; and a first epitaxial feature disposed between the first metal gate structure and the second metal gate structure over a first source/drain region of the semiconductor stack, wherein the first epitaxial feature extends through the dielectric layer and contacts the conductive feature.

Abstract: The present disclosure provides a fuel cell performance optimization methodology combined with simulation method and experimental method, comprising: with the mutual coupling of simulation and experiment, a fuel cell simulation model is established, a bench test is performed, the model is calibrated, the operating conditions are refined and simulation and analysis are performed, and the optimal operating condition is obtained to perform the bench test, the optimal actual output voltage of the fuel cell is obtained, and the output voltage optimization result of the fuel cell are verified. The present disclosure not only reduces the number of experiments and experiment cycles in the process of fuel cell operation condition optimization, but also improves the reliability and accuracy of simulation results, and better plays the role of simulation in optimization.

Abstract: Provided are a trench gate IGBT and a device. The trench gate IGBT includes an emitting electrode, a p well region, a gate, a gate oxide layer, a drift region and a back collecting electrode. The gate is located in a trench; the gate is isolated from the emitting electrode, the p well region and the drift region by the gate oxide layer; the trench is disposed inside a substrate; and recesses are provided at the boundary of the trench and the drift region. During switching on and off the trench gate IGBT, an interface between the drift region and a side surface of the trench is provided with recess gate oxide layers, so that electron charges can be restrained and accumulated, and improving the conduction capacity.

Abstract: A data packet transmission method—that includes: obtaining, by a terminal, N application programs that are running; and if the N application programs include an application program including a low-latency service; determining whether an unlicensed frequency band is in a congestion state; and instructing a network device to schedule a data packet of the terminal to a licensed frequency band for transmission when the unlicensed frequency band is in a congestion state. When determining that the N running application programs include the application program including the low-latency service, the terminal may instruct the network device to schedule the data packet of the terminal to the licensed frequency band for transmission, so as to transmit a data packet of the low-latency service by using the licensed frequency band. Resources in the licensed frequency band are centrally scheduled by the network device, instead of being used through contention.

Abstract: In some embodiments, a method comprises: determining, by a computing device, a potential for tasks of one or more applications not to be completed at a given time, the one or more applications being hosted on remote computing devices; initiating, by the computing device, a call to one or more application programmable interfaces (APIs) of the remote computing devices to retrieve data about the one or more tasks from the one or more applications, the tasks being generated by the one or more applications and including a time of completion being that of the given time; and initiating, by the computing device, an update to at least one of the one or more applications using the retrieved data, so that at least one of the generated tasks is completed before or at the given time.

Abstract: The present disclosure provides a battery detection device. The detection circuit is disposed on the battery and produces an impedance value variation quantity according to a deformation of the battery. The detection circuit includes four connection nodes. The first connection node and the third connection node are connected with the battery. A voltage variation quantity is produced between the second connection node and the fourth connection node according to the impedance value variation quantity. The protection circuit is connected with the second connection node and the fourth connection node. The protection circuit is in an ON state when the voltage variation quantity is greater than or equal to a cut-off voltage. The protection circuit is in an OFF state when the voltage variation quantity is less than the cut-off voltage, so that an operation state of the battery is changed accordingly.

Abstract: An electronic device including two bodies and at least one hinge structure including a connecting assembly and two rotating assemblies is provided. Each rotating assembly is rotatably connected to the connecting assembly and includes a bracket having at least one first sliding slot, a translation member translatably arranged on the bracket and having at least one second sliding slot, and a sliding member having at least one pillar penetrating the first second sliding slots at an overlapping position. The first and second sliding slots are inclined to each other and partially overlapped at the overlapping position. The two bodies are respectively connected to the sliding members. When each rotating assembly rotates, the connecting assembly guides the translation member to translate relative to the bracket to displace the overlapping position and drive the pillar to slide along the first and second slots to move the sliding member and the corresponding body.

Abstract: A method includes determining, by a user equipment (UE), to use a first radio access technology, and triggering, by the UE, a first event to disable a second radio access technology while the UE currently uses the second radio access technology. The first event indicates that a base station fails to configure a secondary cell or instructs the base station to delete a configured secondary cell. The secondary cell is a secondary cell of the second radio access technology on the unlicensed spectrum.

Abstract: The present disclosure provides a battery detection device. The detection circuit is disposed on the battery and produces an impedance value variation quantity according to a deformation of the battery. The detection circuit includes four connection nodes. The first connection node and the third connection node are connected with the battery. A voltage variation quantity is produced between the second connection node and the fourth connection node according to the impedance value variation quantity. The protection circuit is connected with the second connection node and the fourth connection node. The protection circuit is in an ON state when the voltage variation quantity is greater than or equal to a cut-off voltage. The protection circuit is in an OFF state when the voltage variation quantity is less than the cut-off voltage, so that an operation state of the battery is changed accordingly.

Abstract: A fan module including a body and a plurality of blades is provided. The body has a rotating axis and the body is telescopic along the rotating axis to have an elongated state and a shortened state. The blades are respectively disposed on the body and rotate along with the body along the rotating axis. At least a portion of each blade is flexible and a bending state of each blade is changed along with the elongated state or the shortened state of the body. An axial size of each blade along the rotating axis when the body is in the elongated state is greater than the axial size of each blade along the rotating axis when the body is in the shortened state.

Abstract: An antenna selection method and a terminal, where the terminal includes m primary antennas configured for a first application program and n secondary antennas, where m?1, and n?1. The method includes, when the terminal is in a WI-FI connected state and a landscape state, obtaining a key factor and a radio frequency indicator that are of each of m+n antenna combinations, determining a first antenna combination based on the key factor and the radio frequency indicator, where the first antenna combination is a first-priority antenna combination of the m+n antenna combinations, and the first antenna combination includes at least one of the secondary antennas, and using the first antenna combination to perform communication for a second application program.

Abstract: A fan module including a first body, a second body, a first fan assembly, a power module, and a second fan assembly is provided. The second body is slidably disposed at the first body to form a circulation space together. The first fan assembly is rotatably disposed at the first body and has sliding grooves. The power module is disposed in the first body and connected to the first fan assembly. The second fan assembly is rotatably disposed at the second body and has sliding portions, respectively and slidably disposed in corresponding sliding grooves. The power module is adapted to drive the first and second fan assemblies to rotate relative to the first body. A link module is adapted to drive the first and second bodies to relatively slide along an axial direction, so that the first and second fan assemblies are relatively separated or overlapped along the axial direction.

Abstract: The present disclosure relates to a method for monitoring and alarming hydrogen leakage of a fuel-cell vehicle and a system thereof. The method comprises the steps of: acquiring the current hydrogen concentration of a fuel-cell vehicle; judging whether the current hydrogen concentration is 0, if not, acquiring the measured hydrogen concentration, the hydrogen pressure drop value and the normal pressure range generated when the current hydrogen concentration of the fuel-cell vehicle is 0; judging whether the hydrogen pressure drop value exceeds the normal pressure range, if so, determining the predicted hydrogen concentration according to the measured hydrogen concentration and the hydrogen pressure drop value; judging whether the predicted hydrogen concentration exceeds the hydrogen leakage alarm threshold, and if not, determining the hydrogen leakage and issuing an alarm.

Abstract: Disclosed are a semiconductor device, a preparation method therefor and electrical equipment thereof. The semiconductor device includes: a silicon substrate on which an emitter, a gate, and a collector are formed; a bootstrap electrode formed on the silicon substrate; and an insulating layer, formed on the silicon substrate and disposed between the emitter and the bootstrap electrode. A bootstrap capacitor is formed between the emitter and the bootstrap electrode.

Abstract: An antenna selection method includes selecting M1 antenna sets from CN-L1L2 antenna combinations, where L1 is a quantity of reserved antennas, a sum of L1 and L2 is equal to L, determining an antenna set with a maximum channel capacity, in M2 antenna sets, as a target antenna set to perform a preset-duration data transmission, where the M2 antenna sets are antenna sets formed by the M1 antenna sets and the L1 reserved antennas. The L1 reserved antennas include a maximum SNR in a target antenna set used in previous preset-duration data transmission. Each of the M2 antenna sets includes the L1 reserved antennas.