Abstract: A pixel array may include a plurality of pixel regions including a first pixel region and a second pixel region. The pixel array may include a metal grid structure over the plurality of pixel regions. The pixel array may include a light blocking layer. A first portion of the light blocking layer may be over the first pixel region and under the metal grid structure. The first portion may have a first thickness. A second portion of the light blocking layer may be over the second pixel region and under the metal grid structure. The second portion may have a second thickness that is different from the first thickness.

Abstract: Methods, systems, and devices for wireless communications are described. For instance, a flow control layer of a UE may provide a capability message to an application layer including an indication that the UE supports a service for providing flow control information for support of extended reality traffic and may receive a message from an application of the application layer registering a flow associated with the application with the service. The flow control layer may provide, to the application via the service, an indication that a quantity of packets or bytes in a buffer of the flow control layer fails to satisfy a threshold. The UE may obtain, from the application, a packet associated with the flow based on providing the indication that the quantity of packets or bytes in the buffer fails to satisfy the threshold and may transmit, to a network entity, a message including the obtained packet.

Abstract: A data receiving and transmitting method includes following steps: receiving and transmitting a plurality of general priority data by a first request block; receiving and transmitting a plurality of high priority data by a second request block; and if the first request block is unable to receive and transmit a portion data of the plurality of general priority data, receiving and transmitting the portion data of the plurality of general priority data by the second request block.

Abstract: A semiconductor memory device includes a first word line formed over a first active region. In some embodiments, a first metal line is disposed over and perpendicular to the first word line, where the first metal line is electrically connected to the first word line using a first conductive via, and where the first conductive via is disposed over the first active region. In some examples, the semiconductor memory device further includes a second metal line and a third metal line both parallel to the first metal line and disposed on opposing sides of the first metal line, where the second metal line is electrically connected to a source/drain region of the first active region using a second conductive via, and where the third metal line is electrically connected to the source/drain region of the first active region using a third conductive via.

Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, an application server may receive an indication that a handover is likely for a user equipment (UE), wherein the UE is in communication with the application server to receive a data stream. The application server may provide the data stream using values of one or more parameters to reduce an impact of a communication interruption associated with the handover. Numerous other aspects are described.

Abstract: A method of communications is provided, the methods includes: receiving, by a user equipment (UE), a first transmission from a network; receiving, by the UE, a second transmission from the network. The second transmission starts before a third transmission, or the second transmission ends before the start of a third transmission. The third transmission is relevant to the first transmission and comprises feedback of the first transmission. A method of communications performed by a network, a UE and a network device are also provided.

Abstract: A method includes receiving a workpiece. The workpiece includes a first dummy gate, a second dummy gate adjacent the first dummy gate, a first gate spacer disposed along sidewalls of the first dummy gate, and a second gate spacer disposed along sidewalls of the second dummy gate. The method further includes removing the first dummy gate and the second dummy gate to form a first gate trench and a second gate trench, respectively, enlarging the first gate trench and the second gate trench, forming a first metal gate structure in the enlarged first gate trench, and forming a second metal gate structure in the enlarged second gate trench. The enlarged second gate trench is wider than the enlarged first gate trench.

Abstract: Nanostructure field-effect transistors (NSFETs) including isolation layers formed between epitaxial source/drain regions and semiconductor substrates and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a semiconductor substrate; a gate stack over the semiconductor substrate, the gate stack including a gate electrode and a gate dielectric layer; a first epitaxial source/drain region adjacent the gate stack; and a high-k dielectric layer extending between the semiconductor substrate and the first epitaxial source/drain region, the high-k dielectric layer contacting the first epitaxial source/drain region, the gate dielectric layer and the high-k dielectric layer including the same material.

Abstract: A method of communication of a user equipment (UE), including: receiving, by the UE, a first information, the first information corresponds to a precoding applied to a transmission; receiving, by the UE, the transmission based on the first information, when the transmission is downlink transmission; or performing, by the UE, the transmission based on the first information, when the transmission is uplink transmission. A UE, a bases station (BS) and a method of communication of a BS are also provided.

Abstract: A wireless communication method by a user equipment (UE) includes detecting, by the UE, a first signal transmitted by a base station, wherein the first signal is used for the UE to determine a cell for accessing; and/or transmitting, by the UE, a second signal to the base station before performing a random access channel (RACH) procedure.

Abstract: A method of fabricating a device includes providing a fin element in a device region and forming a dummy gate over the fin element. In some embodiments, the method further includes forming a source/drain feature within a source/drain region adjacent to the dummy gate. In some cases, the source/drain feature includes a bottom region and a top region contacting the bottom region at an interface interposing the top and bottom regions. In some embodiments, the method further includes performing a plurality of dopant implants into the source/drain feature. In some examples, the plurality of dopant implants includes implantation of a first dopant within the bottom region and implantation of a second dopant within the top region. In some embodiments, the first dopant has a first graded doping profile within the bottom region, and the second dopant has a second graded doping profile within the top region.

Abstract: The present disclosure provides a semiconductor device and a method of forming the same. A method according one embodiment of the present disclosure includes forming a stack of channel layers interleaved by sacrificial layers, patterning the stack to form a fin-shape structure, forming a dummy gate stack over a channel region of the fin-shape structure, recessing a source/drain region to form a source/drain trench, forming an epitaxial feature in the source/drain trench, after the forming of the epitaxial feature removing the dummy gate stack, releasing the channel layers in the channel region as channel members, forming a gate structure wrapping around each of the channel members, and after the forming of the gate structure performing an ion implantation to increase a dopant concentration of a dopant in the epitaxial feature.

Abstract: A method includes forming a first semiconductor fin and a second semiconductor fin over a substrate; forming a first gate structure over the substrate and crossing the first semiconductor fin; forming a second gate structure over the substrate and crossing the second semiconductor fin; forming a first gate spacer on a sidewall of the first gate structure; and forming a second gate spacer on a sidewall of the second gate structure, wherein in a top view, an outer sidewall of the first gate spacer farthest from the first gate structure is coterminous with an outer sidewall of the second gate spacer farthest from the second gate structure, and an inner sidewall of the first gate spacer in contact with the first gate structure is misaligned with an inner sidewall of the second gate spacer in contact with the second gate structure.

Abstract: The present disclosure describes a memory structure including a memory cell array. The memory cell array includes memory cells and first n-type wells extending in a first direction. The memory structure also includes a second n-type well formed in a peripheral region of the memory structure. The second n-type well extends in a second direction and is in contact with a first n-type well of the first n-type wells. The memory structure further includes a pick-up region formed in the second n-type well. The pick-up region is electrically coupled to the first n-type well of first n-type wells.

Abstract: A method includes providing a substrate having a first region and a second region, forming an active region over the first region, forming a first gate structure and a second gate structure over the active region, etching the first gate structure to form a first opening, and etching the second gate structure to form a second opening. An edge-to-edge distance between the first opening and the active region is smaller than an edge-to-edge distance between the second opening and the active region. The method further includes filling the first and second openings with a dielectric material.

Abstract: The disclosure is related to a method for allocating frequency resources in a wideband system, performed by a user equipment, wherein the wideband system comprises a bandwidth part (BWP) containing a plurality of subbands (N; SB0, SB1), each subband (SB) being formed by resource blocks (RB), the method comprises the steps of: obtaining an interlace structure determined by a set of always-valid RB (AV-RB) starting from a starting AV-RB and containing a number of consecutive RB corresponding to a pre-defined number (T) of RB forming an interlace; and a set of potential-valid RB (PV-RB) as all RB other than the AV-RB; obtaining at least one interlace index (#i) and at least one SB index (SB); determining the frequency resources based on the at least one interlace index, the at least one SB index and the interlace structure.

Abstract: A communication method for communicating with a telecommunication system is provided, with a network node, a base station and a UE coordinately implementing the method. The telecommunication system transmits a control message comprising a channel occupancy duration COD field configured to indicate a duration candidate, such that the UE is configured with control message and enabled to perform transmission and/or reception over the unlicensed spectrum within a remaining channel occupancy duration RCOD determined from the control message.

Abstract: The present disclosure provides a wireless communication method applied in a User Equipment (UE). The method includes: obtaining a first indication from a network device, the first indication being used for indicating a transmission mode; and determining the transmission mode based on the first indication. The transmission mode is used for communications between the network device and the UE, and is a first transmission mode or a second transmission mode. In the first transmission mode, the network device performs transmission in a Bandwidth Part (BWP) including a plurality of BWP parts, to which Listen Before Talk (LBT) is to be applied, after an entirety of the BWP has passed Clear Channel Assessment (CCA). In the second transmission mode, the network device performs transmission in one or more BWP parts of the plurality of BWP parts that have passed CCA.