Abstract: A display panel and a display device are provided. The display panel includes a display region and a non-display region. The non-display region includes a demultiplexing circuit, a fanout wire, and a clock signal line. An input terminal of the demultiplexing circuit is electrically connected to the fanout wire, an output terminal of the demultiplexing circuit is electrically connected to a data line in the display region, and a control terminal of the demultiplexing circuit is electrically connected to the clock signal line. The display panel further includes an isolation signal line including an isolation portion, and an orthographic projection of the isolation portion on a plane where a substrate is located is between an orthographic projection of the clock signal line on the plane where the substrate is located and an orthographic projection of the fanout wire on the plane where the substrate is located.

Abstract: A method includes dispensing sacrificial region over a carrier, and forming a metal post over the carrier. The metal post overlaps at least a portion of the sacrificial region. The method further includes encapsulating the metal post and the sacrificial region in an encapsulating material, demounting the metal post, the sacrificial region, and the encapsulating material from the carrier, and removing at least a portion of the sacrificial region to form a recess extending from a surface level of the encapsulating material into the encapsulating material.

Abstract: An exemplary embodiment of the invention provides an image processing method for a virtual reality display system. The method includes: enabling a first shared buffer and a second shared buffer; performing an image capturing operation to obtain a first image from a virtual reality scene; storing the first image to the first shared buffer; in response to that the storing of the first image is finished, reading the first image from the first shared buffer; performing a depth estimation operation on the first image to obtain depth information corresponding to the first image; storing the depth information to the second shared buffer; in response to that the storing of the depth information is finished, reading the depth information from the second shared buffer; performing an image generation operation according to the depth information to generate a pair of second images corresponding to the virtual reality scene; and outputting the pair of second images by a display of the virtual reality display system.

Abstract: A device includes an active region, a gate structure, a source/drain epitaxial structure, an epitaxial layer, a metal alloy layer, a contact, and a contact etch stop layer. The gate structure is across the active region. The source/drain epitaxial structure is over the active region and adjacent the gate structure. The epitaxial layer is over the source/drain epitaxial structure. The metal alloy layer is over the epitaxial layer. The contact is over the metal alloy layer. The contact etch stop layer lines sidewalls of the source/drain epitaxial structure. The metal alloy layer is spaced apart from the contact etch stop layer.

Abstract: Improved inner spacers for semiconductor devices and methods of forming the same are disclosed.

Abstract: A method of forming a semiconductor device includes forming a first interconnect structure over a carrier; forming a thermal dissipation block over the carrier; forming metal posts over the first interconnect structure; attaching a first integrated circuit die over the first interconnect structure and the thermal dissipation block; removing the carrier; attaching a semiconductor package to the first interconnect structure and the thermal dissipation block using first electrical connectors and thermal dissipation connectors; and forming external electrical connectors, the external electrical connectors being configured to transmit each external electrical connection into the semiconductor device, the thermal dissipation block being electrically isolated from each external electrical connection.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a stack of semiconductor layers spaced apart from and aligned with each other, a first source/drain epitaxial feature in contact with a first one or more semiconductor layers of the stack of semiconductor layers, and a second source/drain epitaxial feature disposed over the first source/drain epitaxial feature. The second source/drain epitaxial feature is in contact with a second one or more semiconductor layers of the stack of semiconductor layers. The structure further includes a first dielectric material disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature and a first liner disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature. The first liner is in contact with the first source/drain epitaxial feature and the first dielectric material.

Abstract: A modular pneumatic somatosensory device comprises a main body, a plurality of airbags, a plurality of inflating modules and a control module. The airbags are detachably disposed at different positions of the main body, and at least a part of the airbags have different sizes. The inflating modules are detachably disposed on the main body, and each inflating module is correspondingly connected with at least one of the airbags. The control module is detachably disposed on the main body and is electrically connected with the inflating modules. The control module controls the inflating modules to inflate the corresponding airbags according to a control signal.

Abstract: An electronic device may have a display with touch sensors. One or more shielding layers may be interposed between the display and the touch sensors. The display may include transistors with gate conductors, a first planarization layer formed over the gate conductors, one or more contacts formed in a first source-drain layer within the first planarization layer, a second planarization layer formed on the first planarization layer, one or more data lines formed in a second source-drain layer within the second planarization layer, a third planarization layer formed on the second planarization layer, and a data line shielding structure formed at least partly in a third source-drain layer within the third planarization layer. The data line shielding structure may be a routing line, a blanket layer, a mesh layer formed in one or more metal layers, and/or a data line covering another data line.

Abstract: A packaging method for a tire pressure monitoring sensor includes a step of placing, a step of pouring, and a step of hardening. In the step of placing, a sensing transmission module is put into a cavity of a modeling unit, and a positioning portion in the cavity restricts the sensing transmission module from moving transversely and toward an inner bottom of the cavity. In the step of pouring, a rubber compound is poured into the cavity and fills the cavity. The sensing transmission module is coated by the rubber compound to form a case on the outer surface of the sensing transmission module. In the step of hardening, the case is hardened and integrally formed with the sensing transmission module to form a tire pressure monitoring sensor which is removed from the cavity.

Abstract: A bonding structure that may be used to form 3D-IC devices is formed using first oblong bonding pads on a first substrate and second oblong bonding pads one a second substrate. The first and second oblong bonding pads are laid crosswise, and the bond is formed. Viewed in a first cross-section, the first bonding pad is wider than the second bonding pad. Viewed in a second cross-section at a right angle to the first, the second bonding pad is wider than the first bonding pad. Making the bonding pads oblong and angling them relative to one another reduces variations in bonding area due to shifts in alignment between the first substrate and the second substrate. The oblong shape in a suitable orientation may also be used to reduce capacitive coupling between one of the bonding pads and nearby wires.

Abstract: A display module includes a substrate, a plurality of pixel units are arrayed on the substrate, and each of the pixel units is provided with at least three light-emitting chips, and the centers of at least three light-emitting chips are not collinear; and the projections of at least three light-emitting chips along a first direction at least partially overlap, and the projections of at least three light-emitting chips along a second direction at least partially overlap where the first direction is perpendicular to the second direction.

Abstract: A tray and an electronic device using the same are provided. The tray used to carry an expansion card includes a base, a tray body, a sliding plate, and a limiting spring. The tray body is slidably disposed on the base and has a base portion and two side walls disposed on two sides of the base portion. The sliding plate is slidably disposed on the base portion and is able to be moved away from or close to one of the side walls relative to the tray body selectively. The limiting spring is disposed on the base portion and is used to limit the sliding plate.

Abstract: A method for preparing a three-dimensional carbon nanotube composite structure comprises: providing a substrate; subjecting the substrate to nickel ion modification treatment to form at least one nickel ion nuclear seed on the substrate; providing a hydrogen gas to pass through the substrate and heating the substrate to a reduction temperature for reducing the nickel ion nuclear seed by the hydrogen gas at the reduction temperature; and supplying a carbon source gas and a protective gas to pass through the substrate and heating the substrate to a growth temperature so that the carbon atoms generated by the carbon source gas through the catalytic cracking of the nickel ion nuclear seed are deposited on the bottom of the nickel ion nuclear seed to form a carbon nanotube gradually, wherein the growth temperature is greater than or equal to the reduction temperature. The three-dimensional carbon nanotube composite structure prepared by the method and its application are also disclosed.

Abstract: A method includes providing a substrate, forming a patterned hard mask layer over the substrate, etching the patterned hard mask layer to form a hole that penetrates the patterned hard mask layer, forming a barrier portion in the hole, removing the patterned hard mask layer, and forming a gate structure over the substrate. Formation of the gate structure includes forming a dielectric body portion on the substrate. The barrier portion that is thicker than the dielectric body portion adjoins one end of the dielectric body portion. The dielectric body portion and the barrier portion are collectively referred to as a gate dielectric layer. Formation of the gate structure further includes forming a gate electrode on the gate dielectric layer and forming gate spacers on opposite sidewalls of the gate electrode. During formation of the gate spacers, a portion of the barrier portion is removed to form a recessed corner.

Abstract: The present disclosure describes a semiconductor device with a fill structure. The semiconductor structure includes first and second fin structures on a substrate, an isolation region on the substrate and between the first and second fin structures, a first gate structure disposed on the first fin structure and the isolation region, a second gate structure disposed on the second fin structure and the isolation region, and the fill structure on the isolation region and between the first and second gate structures. The fill structure includes a dielectric structure between the first and second gate structures and an air gap enclosed by the dielectric structure. The air gap is below top surfaces of the first and second fin structures.

Abstract: A method for regulating an unmanned aerial vehicle (UAV) includes receiving a UAV identifier and one or more types of contextual information broadcasted by the UAV. The UAV identifier uniquely identifies the UAV from other UAVs. The one or more types of contextual information includes at least geographical information of the UAV. The method further includes authenticating, via an authentication device, an identity of the UAV based on the UAV identifier to determine whether the UAV is authorized for operation, and transmitting a signal to a remote device in response to determining whether the UAV is authorized for operation.

Abstract: A light emitting diode device includes a substrate, a conductive via, first and second conductive pads, a driving chip, a flat layer, a redistribution layer, a light emitting diode, and an encapsulating layer. The substrate has a first surface and a second surface opposite thereto. The conductive via penetrates from the first surface to the second surface. The first and second conductive pads are respectively disposed on the first and second surface and in contact with the conductive via. The driving chip is disposed on the first surface. The flat layer is disposed over the first surface and covers the driving chip and the first conductive pad. The redistribution layer is disposed on the flat layer and electrically connects to the driving chip. The light emitting diode is flip-chip bonded to the redistribution layer. The encapsulating layer covers the redistribution layer and the light emitting diode.

Abstract: A reference circuit for generating a reference current includes a plurality of resistive elements including at least one magnetic tunnel junction (MTJ). A control circuit is coupled to a first terminal of the at least one MTJ and is configured to selectively flow current through the at least one MTJ in the forward and inverse direction to generate a reference current.

Abstract: A semiconductor device includes a semiconductor layer and a gate structure on the semiconductor layer. The gate structure includes a multi-stepped gate dielectric on the semiconductor layer and a gate electrode on the multi-stepped gate dielectric. The multi-stepped gate dielectric includes a first gate dielectric segment having a first thickness and a second gate dielectric segment having a second thickness that is less than the first thickness.