Abstract: In NAND Flash memory, bit line precharge/discharge times can be a main component in determining program, erase and read performance. In a conventional arrangement bit line levels are set by the sense amps and bit lines are discharged to a source line level is through the sense amplifier path. Under this arrangement, precharge/discharge times are dominated by the far-side (relative to the sense amps) based on the bit lines' RC constant. Reduction of bit line precharge/discharge times, therefore, improves NAND Flash performance and subsequently the overall system performance. To addresses this, an additional path is introduced between bit lines to the common source level through the use of dummy NAND strings. In an exemplary 3D-NAND (BiCS) based embodiment, the dummy NAND strings are taken from dummy blocks, where the dummy blocks can be placed throughout the array to evenly distribute the discharging current.

Abstract: Rather than supply an internal node of a non-volatile memory's sense amplifier from a supply level through a transistor by applying a voltage to the transistor's gate to clamp the node, the internal node is supplied by an op-amp through a pass gate. The op-amp receives feedback from above the pass gate. This allows a desired voltage level to be more quickly and accurately established on the node. Using a two-step reference level for the op-amp can further increases speed and accuracy. Biasing the op-amp with the external power supply can offer additional advantages.

Abstract: In a non-volatile memory formed according to a NAND-type architecture that has, on one or both ends of the NAND strings, multiple select gates including some with programmable threshold voltages, a structure and corresponding for efficiently programming of such select gates. On the drain side, the end most of multiple drain select transistors is individually controllable and used for biasing purposes while one or more other drain side select gates are collectively programmed to set adjust their threshold voltage. Independently, on the source side, the end most of multiple source select transistors is individually controllable and used for biasing purposes while other source side select gates are collectively programmed to set adjust their threshold voltage.

Abstract: In non-volatile memory circuits, the amount of time needed for bit lines to settle can vary significantly depending on the location of the blocks selected. For example, in a sensing operation, the amount of time for bit lines to settle when being pre-charged by sense amplifiers will be shorter for blocks near the sense amps than for far side blocks. These variations can be particularly acute in high density memory structures, such as in 3D NAND memory, such as that of the BiCS variety. Rather than use the same timing for all blocks, the blocks can be segmented into groups based on their proximity to the sense amps. When performing a sensing operation, the timing can be adjusted based on the block group to which a selected page of memory cells belongs.

Abstract: Implementations are directed to predicting signal degradation at receivers used to display a programming service. The receivers capture signal strength data that is then transmitted to a processing location, which may be associated with a provider of the programming service. A signal degradation detector at the provider operates to predict whether or not a future unacceptable signal quality will occur within a time interval. The prediction may be based on a test quantity calculated from signals captured at the receiver and based on a figure of merit for the geographic locale in which the receiver is located. A maintenance call may be initiated for those receivers that have such a poor signal quality.

Abstract: A non-volatile storage system that performs programming and reading processes. The programming process includes coarse/fine programming and verify operations. Programming is verified by testing for two different threshold voltage levels while applying the same voltage level to the control gate of a memory cell by testing for current levels through the memory cells and adjusting the current levels tested for based on current temperature such that the difference between the two effective tested threshold voltage levels remains constant over temperature variation.

Abstract: The invention concerns an anatomically shaped dental implant section custom shaped to fit the tooth socket of a particular individual and having a ridge circumferentially located that is complementary in size and location to a notch prepared in the tooth socket. The invention further concerns a pilot tool for the removal of soft tissue from the tooth socket prior to implantation, as well as an undercut pilot tool for placing a notch in the proximal walls of the tooth socket. The invention also concerns a dental implant system containing at least two separate dental implant sections that can be joined together to form a dental implant custom shaped to fit the tooth socket of a particular individual. The invention also concerns a method of implanting a dental implant of the present invention by sequentially positioning anatomically shaped implant sections in the root voids of the tooth socket and then joining the coronal ends of the anatomically shaped implant sections to form an anatomically shaped implant.

Abstract: A non-volatile storage system that performs programming and reading processes. The programming process includes coarse/fine programming and verify operations. Programming is verified by testing for two different threshold voltage levels while applying the same voltage level to the control gate of a memory cell by testing for current levels through the memory cells and adjusting the current levels tested for based on current temperature such that the difference between the two effective tested threshold voltage levels remains constant over temperature variation.

Abstract: The invention concerns a dental implant comprising an apical end tapered conical portion axially connected to a coronal end cylindrical body wherein the coronal end cylindrical body has ridges on the proximal sides and has no ridges on the mesial and distal sides. The invention further concerns a series of manual pilot tools for the preparation of the tooth socket prior to implantation. The invention further concerns an undercut pilot tool for placing notches in the proximal walls of the tooth socket to prepare the socket to receive the dental implant. The invention also concerns methods for replacing a tooth with a prefabricated implant immediately upon removal of the tooth without the necessity for drilling by virtue of the initial retention of the prefabricated implant inside the jaw bone.

Abstract: A non-volatile storage system that performs programming and reading processes. The programming process includes coarse/fine programming and verify operations. Programming is verified by testing for two different threshold voltage levels while applying the same voltage level to the control gate of a memory cell by testing for current levels through the memory cells and adjusting the current levels tested for based on current temperature such that the difference between the two effective tested threshold voltage levels remains constant over temperature variation.

Abstract: A non-volatile storage system that performs programming and reading processes. The programming process includes coarse/fine programming and verify operations. Programming is verified by testing for two different threshold voltage levels while applying the same voltage level to the control gate of a memory cell by testing for current levels through the memory cells and adjusting the current levels tested for based on current temperature such that the difference between the two effective tested threshold voltage levels remains constant over temperature variation.

Abstract: Implementations are directed to predicting signal degradation at receivers used to display a programming service. The receivers capture signal strength data that is then transmitted to a processing location, which may be associated with a provider of the programming service. A signal degradation detector at the provider operates to predict whether or not a future unacceptable signal quality will occur within a time interval. The prediction may be based on a test quantity calculated from signals captured at the receiver and based on a figure of merit for the geographic locale in which the receiver is located. A maintenance call may be initiated for those receivers that have such a poor signal quality.

Abstract: Implementations are directed to predicting signal degradation at receivers used to display a programming service. The receivers capture signal strength data that is then transmitted to a processing location, which may be associated with a provider of the programming service. A signal degradation detector at the provider operates to predict whether or not a future unacceptable signal quality will occur within a time interval. The prediction may be based on a test quantity calculated from signals captured at the receiver and based on a figure of merit for the geographic locale in which the receiver is located. A maintenance call may be initiated for those receivers that have such a poor signal quality.

Abstract: An array of non-volatile storage elements includes a first group of non-volatile storage elements connected to a selected word line, a second group of non-volatile storage elements connected to the selected word line, a first group of bit lines in communication with the first group of non-volatile storage elements, a second group of bit lines in communication with the second group of non-volatile storage elements, a first set of sense modules located at a first location and connected to the first group of bit lines, and a second set of sense modules located at a second location and connected to the second group of bit lines. The first set of sense modules applies a first bit line voltage based on the bit line distance between the first set of sense modules and the first group of non-volatile storage elements. The second set of sense modules applies a second bit line voltage based on the bit line distance between the second set of sense modules and the second group of non-volatile storage elements.

Abstract: An array of non-volatile storage elements includes a first group of non-volatile storage elements connected to a selected word line, a second group of non-volatile storage elements connected to the selected word line, a first group of bit lines in communication with the first group of non-volatile storage elements, a second group of bit lines in communication with the second group of non-volatile storage elements, a first set of sense modules located at a first location and connected to the first group of bit lines, and a second set of sense modules located at a second location and connected to the second group of bit lines. The first set of sense modules applies a first bit line voltage based on the bit line distance between the first set of sense modules and the first group of non-volatile storage elements. The second set of sense modules applies a second bit line voltage based on the bit line distance between the second set of sense modules and the second group of non-volatile storage elements.

Abstract: A method and apparatus for managing the establishment of a wireless connection between an instrument host and a non-fixed device is provided. The method comprises acquiring the non-fixed medical device address over a fixed wire by replacing the traditional wireless searching mechanism. The method also comprises providing an authentication mechanism between the instrument host and the non-fixed device, for example, across a wireless communications network.

Abstract: A mobile station (110) that includes a first network adapter (210) configured to communicate over a first communications network (120) and a second network adapter (220) configured to communicate over a second communications network (130). The mobile station also includes a multimodal processing module (250) that generates a busy notification in response to receiving a call via the second network adapter while the mobile station is engaged in a first call via the first network adapter. The busy notification can be automatically generated by the multimodal processing module in response to the second call being received, or generated in response to receiving a user input entered in response to the second call has been received.