Abstract: A semiconductor device includes a semiconductor substrate; a plurality of channel regions, including a p-type channel region and an n-type channel region, disposed over the semiconductor substrate; and a gate structure. The gate structure includes a gate dielectric layer disposed over the plurality of channel regions and a work function metal (WFM) structure disposed over the gate dielectric layer. The WFM structure includes an n-type WFM layer over the n-type channel region and not over the p-type channel region and further includes a p-type WFM layer over both the n-type WFM layer and the p-type channel region. The gate structure further includes a fill metal layer disposed over the WFM structure and in direct contact with the p-type WFM layer.

Abstract: In one configuration, multiple TRPs, or base stations such a next generation node B (gNB) base stations send different transport blocks (TBs) to a user equipment (UE) at the same time or at different times. In another configuration, multiple base stations may send the same data at the same time to a UE. When the same data is being sent by multiple base stations to a UE, the UE must be notified by some mechanism. Disclosed herein are multiple mechanism for notifying the UE that multiple base stations will be transmitting toe same data at the same time. When there is a backhaul between a TRP and another, each TRP can choose to send the same data stream to increase the reliability of the transmission when, for example, the UE receives at a low signal-to-noise ratio (SNR).

Abstract: A resonator includes a resonance layer, a substrate, and a barrier layer. The barrier layer is located on the substrate, and the barrier layer and the substrate form a cavity. The cavity is configured to accommodate the resonance layer. The barrier layer includes a top wall and a side wall, and an inner surface of the side wall surrounds the resonance layer. An outer surface of the side wall includes a groove, and the groove surrounds the side wall.

Abstract: The present disclosure discloses a thermal plasma treatment method for sulfur hexafluoride (SF6) degradation. In the thermal plasma treatment method for SF6 degradation, Ar is input into a thermal plasma generator as a carrier gas; annular electrodes are electrically connected to a direct current power supply to generate an arc plasma region in the presence of the carrier gas Ar; to-be-reacted SF6 and to-be-reacted H2 in a predetermined ratio are input into the arc plasma region to generate hydrogen radicals as well as fluorine radicals, and the hydrogen radicals and the fluorine radicals are bonded with each other to generate HF to inhibit the self-recovery reaction of SF6; and final products include HF and elemental S.

Abstract: Methods, systems, and devices for wireless communication are described to support replacing values of one or more information bit vectors with one or more corresponding sets of parity bits. A first wireless device may replace an information bit vector with a parity bit vector, using a set of information bits of the information bit vector and based on a parity check matrix, which may result in generating the set of information bits at an information bit vector corresponding to a parity bit column of the parity check matrix, during encoding. The first wireless device may perform a transmission to a second wireless device, which may receive the transmission, decode the set of information bits to the information bit vector corresponding to the parity bit column. The second wireless device may replace other bit estimates of a vector corresponding to an information bit column with the set of information bits.

Abstract: An end cover assembly, an air cylinder, a tread sweeper and a railway vehicle.

Abstract: This disclosure discloses a power adapter and an electronic device system, and relates to the field of heat dissipation technologies. The power adapter includes a housing, a printed circuit board assembly, and insulation powder filled in the housing. The printed circuit board assembly is fastened in the housing, and the insulation powder is used to conduct heat generated by the printed circuit board assembly to the housing. Compared with a thermally conductive adhesive, the insulation powder does not have a problem of poor fluidity, and can more easily be sufficiently filled. This solution improves heat dissipation effect of the power adapter and helps further increase a charging power of the power adapter.

Abstract: Provided are an information transmission method and a relevant device. The method includes: a terminal receiving first signaling and second signaling, where the first signaling is configured for indicating a transmission configuration indication (TCI) state, and the second signaling is configured for triggering a first reference signal indicated in the TCI state; and the terminal determining, according to the first signaling, a target channel or a target signal scheduled by the first signaling, where the target channel or the target signal scheduled by the first signaling uses quasi-co-location (QCL) information corresponding to the first reference signal transmitted before a first symbol or QCL information corresponding to the second signaling transmitted before a first symbol.

Abstract: Exfoliated nanoplatelets functionalized with a non-polar moiety, such as an ethylene or propylene derived polymer, are useful for forming composites, films, and polymer blends.

Abstract: Semiconductor processing apparatuses and methods are provided in which an electrostatic discharge (ESD) prevention layer is utilized to prevent or reduce ESD events from occurring between a semiconductor wafer and one or more components of the apparatuses. In some embodiments, a semiconductor processing apparatus includes a wafer handling structure that is configured to support a semiconductor wafer during processing of the semiconductor wafer. The apparatus further includes an ESD prevention layer on the wafer handling structure. The ESD prevention layer includes a first material and a second material, and the second material has an electrical conductivity that is greater than an electrical conductivity of the first material.

Abstract: An image sensing device and a control device of an illumination device thereof are provided. The control device includes a control circuit, an operation circuit, and multiple driving signal generators. The control circuit generates multiple control signals. The operation circuit performs a logical operation on the control signals and an image capturing signal to generate multiple operation results. The driving signal generator respectively provides multiple driving signals to the illumination device according to the operation results, and the driving signals respectively have multiple different output powers.

Abstract: An organic semiconductor thin film including a liquid crystalline organic semiconductor, in which Qp and Qt to be measured using a predetermined measurement method satisfy a predetermined requirement (1) and a rocking scan pattern has a ratio Ipeak/Ibas, that is a ratio of Ipeak which is a peak intensity of a maximum peak with respect to Ibas which is a base line value, of less than 10: 0.06?Qp/Qt?0.5 . . . (1).

Abstract: A sealing article includes a body and a coating layer disposed on at least one surface of the body. The body comprises a polymeric elastomer such as perfluoroelastomer or fluoroelastomer. The coating layer comprises at least one metal. The sealing article may be a seal, a gasket, an O-ring, a T-ring or any other suitable product. The sealing article is resistant to ultra-violet (UV) light and plasma, and may be used for sealing a semiconductor processing chamber.

Abstract: Certain aspects of the present disclosure relate to wireless communications, and more particularly, to techniques for beam determination, multi-user transmission, and channel state variance information (CSVI) reporting in a holographic multiple input multiple output (MIMO) system.

Abstract: In some embodiments, an image sensor is provided. The image sensor includes a photodetector disposed in a semiconductor substrate. A wave guide filter having a substantially planar upper surface is disposed over the photodetector. The wave guide filter includes a light filter disposed in a light filter grid structure. The light filter includes a first material that is translucent and has a first refractive index. The light filter grid structure includes a second material that is translucent and has a second refractive index less than the first refractive index.

Abstract: Examples of an integrated circuit with gate cut features and a method for forming the integrated circuit are provided herein. In some examples, a workpiece is received that includes a substrate and a plurality of fins extending from the substrate. A first layer is formed on a side surface of each of the plurality of fins such that a trench bounded by the first layer extends between the plurality of fins. A cut feature is formed in the trench. A first gate structure is formed on a first fin of the plurality of fins, and a second gate structure is formed on a second fin of the plurality of fins such that the cut feature is disposed between the first gate structure and the second gate structure.

Abstract: The present disclosure provides a composition comprising a compound of formula (I) or a physiologically acceptable salt thereof, in which the compound of formula (I) or a physiologically acceptable salt thereof has a HPLC purity of ?90%; wherein R1, R2, X and n are as defined herein. The present disclosure further provides use of the composition according to the present disclosure for preparing and/or purifying a composition comprising a salt of the compound of formula (I), and a method for treating a disease caused by a Coronavirus which comprises administering the composition of the present disclosure to a subject. The composition of the present disclosure comprises the compound of formula (I) with high purity, and has good fluidity and anti-caking property; moreover, the claimed composition comprising the compound of formula (I)) with high purity is more suitable for preparing a composition comprising a salt of the compound of formula (I) with higher purity.

Abstract: The present disclosure provides a soft ground cleaning vehicle, including a main body frame; wherein each of both sides of the main body frame is arranged with a screw propulsion mechanism, and a lower portion of each of the both sides of the main body frame is arranged with a bottom frame; a power assembly is arranged on the bottom frame, and an extension frame is arranged on a lower portion of the bottom frame; the extension frame is arranged with a rotation assembly; a plastic track is arranged on the power assembly and the rotation assembly; a plurality of stand plates are arranged on an outer strip surface of the plastic track.

Abstract: The present disclosure relates to a JAK inhibitor upadacitinib intermediate and a preparation method therefor, and to a preparation method for a JAK inhibitor upadacitinib. The upadacitinib intermediate of the present application is as shown in Formula (II) or Formula (III), wherein, R is a protective group of nitrogen atoms, and R1 is an open-chain or cyclic amine group. Compared with the prior art, the method for the synthesis of upadacitinib of the present application, significantly reduces cost, is environmentally-friendly. And the quality of the final product is well controlled.

Abstract: A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.