Abstract: A display device is provided. The display device includes a display panel and a visible angle adjustment panel. The visible angle adjustment panel has a liquid-crystal layer. The liquid-crystal layer has a plurality of cell gaps, wherein the thicknesses of the cell gaps are different from each other, and the thicknesses of the cell gaps gradually increase along a direction.

Abstract: An electronic device and a vehicle using the same are provided. The electronic device includes a display panel. The display panel is switched between a share mode and a privacy mode. In the privacy mode, a first light emission brightness measured at a first viewing angle is lower than a second light emission brightness measured at a normal line of the display panel, and a third light emission brightness measured at a second viewing angle is higher than the second light emission brightness.

Abstract: The disclosure provides an electronic device including a viewing angle control structure. The viewing angle control structure includes a first substrate, a second substrate disposed opposite to the first substrate, an adjustable dielectric layer disposed between the first substrate and the second substrate, a first alignment layer disposed between the first substrate and the adjustable dielectric layer, and a second alignment layer disposed between the second substrate and the adjustable dielectric layer. One of the first alignment layer and the second alignment layer is in a horizontal alignment and the other of the first alignment layer and the second alignment layer is in a vertical alignment.

Abstract: An electronic device is provided. The electronic device includes a viewing angle switchable structure. The viewing angle switchable structure includes a first polarizer, a second polarizer, a first liquid crystal layer, a second liquid crystal layer, and a substrate. The first liquid crystal layer is disposed between the first polarizer and the second polarizer. The second liquid crystal layer is disposed between the second polarizer and the substrate. A polarized light is incident into the second liquid crystal layer. An absorption axis of the first polarizer and an absorption axis of the second polarizer have different angles. The angle of the absorption axis of the first polarizer is perpendicular to a polarization direction of the polarized light.

Abstract: A display device is provided. The display device includes a display panel including a substrate and a plurality of scan lines disposed on the substrate and extending in a first direction, a backlight module disposed under the display panel, and an optical film disposed above the backlight module and including a plurality of light-blocking portions and a plurality of light-transmission portions which are arranged alternately. The light blocking portions extend in a second direction, and the first direction and the second direction are not parallel.

Abstract: A display device is provided. The display device includes a display panel and a visible angle adjustment panel. The visible angle adjustment panel has a liquid-crystal layer. The liquid-crystal layer has a plurality of cell gaps, wherein the thicknesses of the cell gaps are different from each other, and the thicknesses of the cell gaps gradually increase along a direction.

Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer emitting an UV light, formed between the first semiconductor layer and the second semiconductor layer; a first transparent conductive layer formed on the second semiconductor layer, the first transparent conductive layer including metal oxide; and a second transparent conductive layer formed on the first transparent conductive layer, the second transparent conductive layer including graphene, wherein the first transparent conductive layer is continuously formed over a top surface of the second semiconductor layer, the first transparent conductive layer comprises a thickness smaller than 10 nm.

Abstract: FinFET devices, along with methods for fabricating such devices, are disclosed herein for facilitating device characterization. An exemplary FinFET device includes a fin having a first portion extending in a first direction and a second portion extending from the first portion in a second direction. The second direction is substantially perpendicular to the first direction. The first portion includes a first region doped with a first type dopant disposed between second regions doped with a second type dopant. The first type dopant is opposite the second type dopant. A source contact and a drain contact are coupled to the second regions of the first portion, and a body contact is coupled to the second portion. A gate is disposed over the first region of the first portion, and the second portion extends from the first region.

Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer emitting an UV light, formed between the first semiconductor layer and the second semiconductor layer; a first transparent conductive layer formed on the second semiconductor layer, the first transparent conductive layer including metal oxide; and a second transparent conductive layer formed on the first transparent conductive layer, the second transparent conductive layer including graphene, wherein the first transparent conductive layer is continuously formed over a top surface of the second semiconductor layer, the first transparent conductive layer comprises a thickness smaller than 10 nm.

Abstract: FinFET devices, along with methods for fabricating such devices, are disclosed herein for facilitating device characterization. An exemplary FinFET device includes a fin having a first portion extending in a first direction and a second portion extending from the first portion in a second direction. The second direction is substantially perpendicular to the first direction. The first portion includes a first region doped with a first type dopant disposed between second regions doped with a second type dopant. The first type dopant is opposite the second type dopant. A source contact and a drain contact are coupled to the second regions of the first portion, and a body contact is coupled to the second portion. A gate is disposed over the first region of the first portion, and the second portion extends from the first region.

Abstract: A method and system is disclosed for providing access to the body of a FinFET device. In one embodiment, a FinFET device for characterization comprises an active fin comprising a source fin, a depletion fin, and a drain fin; a side fin extending from the depletion fin and coupled to a body contact for providing access for device characterization; and a gate electrode formed over the depletion fin and separated therefrom by a predetermined dielectric layer, wherein the gate electrode and the dielectric layer thereunder have a predetermined configuration to assure the source and drain fins are not shorted.

Abstract: A channelization method of digital content and an audio-video server system are provided. A received operational behavior is packaged as an execution module, and the execution module is associated with a channel number. A correlation between the channel number and the execution module is recorded in a local channel list. Accordingly, when a switch command that contains the channel number is received, the execution module corresponding to the channel number is obtained from the local channel list, so as to perform the operational behavior to use the digital content.

Abstract: A channelization method of digital content and an audio-video server system are provided. A received operational behavior is packaged as an execution module, and the execution module is associated with a channel number. A correlation between the channel number and the execution module is recorded in a local channel list. Accordingly, when a switch command that contains the channel number is received, the execution module corresponding to the channel number is obtained from the local channel list, so as to perform the operational behavior to use the digital content.

Abstract: An integrated circuit comprises a substrate and a buried dielectric formed in the substrate. The buried dielectric has a first thickness in a first region, a second buried dielectric thickness in a second region, and a step between the first and second regions. A semiconductor layer overlies the buried dielectric.

Abstract: A semiconductor structure includes of a plurality of semiconductor fins overlying an insulator layer, a gate dielectric overlying a portion of said semiconductor fin, and a gate electrode overlying the gate dielectric. Each of the semiconductor fins has a top surface, a first sidewall surface, and a second sidewall surface. Dopant ions are implanted at a first angle (e.g., greater than about 7°) with respect to the normal of the top surface of the semiconductor fin to dope the first sidewall surface and the top surface. Further dopant ions are implanted with respect to the normal of the top surface of the semiconductor fin to dope the second sidewall surface and the top surface.

Abstract: A channelization method of digital content and an audio-video server system are provided. A received operational behavior is packaged as an execution module, and the execution module is associated with a channel number. A correlation between the channel number and the execution module is recorded in a local channel list. Accordingly, when a switch command that contains the channel number is received, the execution module corresponding to the channel number is obtained from the local channel list, so as to perform the operational behavior to use the digital content.

Abstract: A semiconductor structure includes of a plurality of semiconductor fins overlying an insulator layer, a gate dielectric overlying a portion of said semiconductor fin, and a gate electrode overlying the gate dielectric. Each of the semiconductor fins has a top surface, a first sidewall surface, and a second sidewall surface. Dopant ions are implanted at a first angle (e.g., greater than about 7°) with respect to the normal of the top surface of the semiconductor fin to dope the first sidewall surface and the top surface. Further dopant ions are implanted with respect to the normal of the top surface of the semiconductor fin to dope the second sidewall surface and the top surface.

Abstract: An inductive device including an inductor coil located over a substrate, at least one electrically insulating layer interposing the inductor coil and the substrate, and a plurality of current interrupters each extending into the substrate, wherein a first aggregate outer boundary of the plurality of current interrupters substantially encompasses a second aggregate outer boundary of the inductor coil.

Abstract: An integrated circuit comprises a substrate and a buried dielectric formed in the substrate. The buried dielectric has a first thickness in a first region, a second buried dielectric thickness in a second region, and a step between the first and second regions. A semiconductor layer overlies the buried dielectric.

Abstract: A multiple-gate transistor structure which includes a substrate, source and drain islands formed in a portion of the substrate, a fin formed of a semi-conducting material that has a top surface and two sidewall surfaces, a gate dielectric layer overlying the fin, and a gate electrode wrapping around the fin on the top surface and the two sidewall surfaces separating source and drain islands. In an alternate embodiment, a substrate that has a depression of an undercut or a notch in a top surface of the substrate is utilized.