Abstract: A method of measuring resistance of a magnetic tunnel junction (MTJ) of an MRAM memory cell includes applying a voltage of a selected level to a memory cell comprising an MTJ in series with a memory cell transistor in a conducting state. A current through the memory cell is determined. A variable voltage is applied to a replica cell not having an MTJ and comprising a replica cell transistor in a conducting state. A value of the variable voltage is determined, wherein a resulting current through the replica cell is substantially the same as the current through the memory cell. The MTJ resistance is computed by taking the difference of the memory cell voltage and the determined variable replica cell voltage and dividing the result by the determined memory cell current.

Abstract: A memory includes multiple interface ports. The memory also includes at least two sub-arrays each having an instance of all of the bit lines of the memory and a portion of the word lines of the memory. The memory has a common decoder coupled to the sub-arrays and configured to control each of the word lines. The memory also includes multiplexers coupled to each of the interface ports. The multiplexers are configured to cause the selection of one of the sub-arrays based upon an address of a memory cell received at one or more of the interface ports.

Abstract: Power reduction is accomplished in an electronic memory by segmenting portions of the memory and only enabling certain memory portions depending upon where the memory is to be accessed. In one embodiment, the bit lines are segmented using latch repeaters to control address selection with respect to segments beyond a first segment. The latch repeaters are, in one embodiment, allowed to remain in their operated/non-operated state at the completion of a memory read/write cycle. This then avoids successive enabling pulses when the same segment is accessed on successive cycles.

Abstract: A circuit device includes a first input to receive a reset control signal and a second input coupled to an output of a latch. The circuit device also includes a logic circuit adapted to conditionally reset the latch based on a state of the output in response to receiving the reset control signal.

Abstract: In a particular illustrative embodiment, a system is disclosed that includes a first power domain that is responsive to a first power switching circuit and a second power domain that is responsive to a second power switching circuit. The system also includes a logic circuit adapted to selectively activate the first power switching circuit and the second power switching circuit. At least one of the first power switching circuit and the second power switching circuit includes a first set of transistors adapted for activation during a first power up stage and a second set of transistors adapted for activation during a second power up stage after at least one of the first set of transistors are activated.