Abstract: A chemical mechanical polishing apparatus includes a platen to hold a polishing pad, a carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, a dispenser to supply a polishing liquid to the polishing surface, and a temperature control system including a body configured to contact the polishing surface or the polishing liquid on the polishing surface. The body supports a thermal control module positioned over the polishing pad.

Abstract: An apparatus for steam treatment of a conditioner head and/or conditioner disk in a chemical mechanical polishing system includes a conditioner cleaning cup, a boiler to generate steam, one or more nozzles positioned to direct steam inwardly into a cavity defined by the load cup, and a supply line running from the boiler to the one or more nozzles to supply steam to the one or more nozzles.

Abstract: A chemical mechanical polishing system includes a platen to support a polishing pad, a carrier head, a motor to generate relative motion between the platen and the carrier head, a steam generator including a vessel having a water inlet and one or more steam outlets and a heating element configured to apply heat to a portion of lower chamber to generate steam, a nozzle oriented to deliver steam from the steam generator onto the polishing pad, a tank to hold a cleaning fluid, a first valve in a first fluid line between the vessel and the nozzle to controllably connect and disconnect the vessel and the nozzle, a second valve in a second fluid line between the vessel and the tank to controllably connect and disconnect the vessel and the tank such that steam from the vessel heats fluid in the tank.

Abstract: A method of processing a substrate includes selectively dispensing a treatment fluid on a die-by-die basis to onto a substrate, and chemical mechanical polishing the substrate after dispensing the treatment fluid. The treatment fluid modifies a polishing rate of the chemical mechanical polishing at one or more selected die(s) to which the treatment fluid is applied in comparison to one or more remaining die(s) to which the treatment fluid is not applied.

Abstract: An apparatus for steam treatment of a carrier head or a substrate in a chemical mechanical polishing system includes a load cup, a pedestal in a cavity defined by the load cup, the pedestal configured to receive a substrate from or supply a substrate to a carrier head, a boiler to generate steam, one or more nozzles positioned to direct steam inwardly into the cavity defined by the load cup, and a supply line running from the boiler to the one or more nozzles to supply steam to the one or more nozzles.

Abstract: A polishing assembly includes a chemical mechanical polishing system, a fluid source, and a fluid delivery conduit to carry a fluid from the fluid source into the chemical mechanical polishing system. The chemical mechanical polishing system including a platen to support a polishing pad, a carrier head to support a substrate and bring the substrate into contact with the polishing pad, and a motor to cause relative motion between platen and the carrier head. The fluid delivery conduit includes electrically insulative tubing, a conductive wrapper wrapped around an outer diameter of the tubing from a first end of the tubing to a second end of the tubing, and a conductive wire attached to the conductive wrapper first end. The conductive wrapper is configured to conduct an electrostatic discharge, and the conductive wire is configured to conduct the electrostatic discharge from the conductive wrapper to a grounding source.

Abstract: A chemical mechanical polishing system includes a steam generator with a heating element to apply heat to a vessel to generate steam, an opening to deliver steam onto a polishing pad, a first valve in a fluid line between the opening and the vessel, a sensor to monitor a steam parameter, and a control system. The control system causes the valve to open and close in accordance with a steam delivery schedule in a recipe, receive a measured value for the steam parameter from the sensor, receive a target value for the steam parameter, and perform a proportional integral derivative control algorithm with the target value and measured value as inputs so as to control the first valve and/or a second pressure release valve and/or the heating element such that the measured value reaches the target value substantially just before the valve is opened according to the steam delivery schedule.

Abstract: A chemical mechanical polishing apparatus includes a rotatable platen to hold a polishing pad, a carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, and a temperature control system including a source of heated or coolant fluid and a plenum having a plurality of openings positioned over the platen and separated from the polishing pad for delivering the fluid onto the polishing pad, wherein at least some of the openings are each configured to deliver a different amount of the fluid onto the polishing pad.

Abstract: A chemical mechanical polishing system includes a polishing a port to dispense polishing liquid onto a polishing pad and a liquid flow controller to control a flow rate of the polishing liquid to the port, a temperature control system to control a temperature of the polishing pad, and a control system. The control system is configured to obtain a baseline removal rate, a baseline temperature and a baseline polishing liquid flow rate. A function is stored relating removal rate to polishing liquid flow rate and temperature. The function is used to determine a reduced polishing liquid flow rate and an adjusted temperature such that a resulting removal rate is not below the baseline removal rate. The liquid flow controller is controlled to dispense the polishing liquid at the reduced polishing liquid flow rate and control the temperature control system so that the polishing process reaches the adjusted temperature.

Abstract: A chemical mechanical polishing system includes a platen to support a polishing pad having a polishing surface, a source of a heating fluid, a reservoir to hold a polishing liquid, and a dispenser having one or more apertures suspended over the platen to direct the polishing liquid onto the polishing surface, wherein the source of the heating fluid is coupled to the dispenser and configured to deliver the heating fluid into the polishing liquid to heat the polishing liquid after the polishing liquid leaves the reservoir and before the polishing liquid is dispensed onto the polishing surface.

Abstract: A chemical mechanical polishing system includes a platen to support a polishing pad having a polishing surface, a source of coolant, a dispenser having one or more apertures suspended over the platen to direct coolant from the source of coolant onto the polishing surface of the polishing pad; and a controller coupled to the source of coolant and configured to cause the source of coolant to deliver the coolant through the nozzles onto the polishing surface during a selected step of a polishing operation.

Abstract: A chemical mechanical polishing system includes a platen to support a polishing pad having a polishing surface, a conduit having an inlet to be coupled to a gas source, and a dispenser coupled to the conduit and having a convergent-divergent nozzle suspended over the platen to direct gas from the gas source onto the polishing surface of the polishing pad.

Abstract: A steam generating apparatus includes a canister having a water inlet and a steam outlet. The steam generating apparatus includes a barrier in the canister dividing the canister into a lower chamber and an upper chamber. The lower chamber is positioned to receive water from the water inlet. The steam outlet valve receives steam from the upper chamber. The barrier has apertures for steam to pass from the lower chamber to the upper chamber and allows for condensation to pass from the upper chamber to the lower chamber. The steam generating apparatus includes a heating element configured to apply heat to a portion of lower chamber. The steam generating apparatus includes a controller configured to modify the flow rate of water through the water inlet to keep a water level above the heating element and below the steam outlet.

Abstract: A method of cleaning for a chemical mechanical polishing system includes directing a gas that includes steam from an orifice onto a component in the polishing system while the component is spaced away from a polishing pad of the polishing system to clean the component, and moving the component into contact with the polishing pad.

Abstract: An apparatus for steam treatment of a carrier head or a substrate in a chemical mechanical polishing system includes a load cup, a pedestal in a cavity defined by the load cup, the pedestal configured to receive a substrate from or supply a substrate to a carrier head, a boiler to generate steam, one or more nozzles positioned to direct steam inwardly into the cavity defined by the load cup, and a supply line running from the boiler to the one or more nozzles to supply steam to the one or more nozzles.

Abstract: A method of temperature control for a chemical mechanical polishing system includes directing a gas that includes steam from an orifice onto the component in the polishing system while the component is spaced away from a polishing pad of the polishing system to raise a temperature of the component to an elevated temperature, and before the component returns to an ambient temperature, moving the component into contact with the polishing pad.

Abstract: A chemical mechanical polishing apparatus includes a platen having a top surface to hold a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad during a polishing process, and a temperature monitoring system. The temperature monitoring system includes a non-contact thermal sensor positioned above the platen that has a field of view of a portion of the polishing pad on the platen. The sensor is rotatable by the motor around an axis of rotation so as to move the field of view across the polishing pad.

Abstract: A chemical mechanical polishing apparatus includes a rotatable platen to hold a polishing pad, a rotatable carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, a polishing liquid supply port to supply a polishing liquid to the polishing surface, a thermal control system including a movable nozzle to spray a medium onto the polishing surface to adjust a temperature of a zone on the polishing surface, an actuator to move the nozzle radially relative to an axis of rotation of the platen, and a controller configured to coordinate dispensing of the medium from the nozzle with motion of the nozzle across the polishing surface.

Abstract: A chemical mechanical polishing apparatus includes a platen to hold a polishing pad, a carrier laterally movable by an actuator across the polishing pad to hold a substrate against a polishing surface of the polishing pad during a polishing process, a thermal control system including a plurality of independently controllable heaters and coolers to independently control temperatures of a plurality of zones on the polishing pad, and a controller configured to cause the thermal control system to generate a first zone having a first temperature and a second zone having a different second temperature on the polishing pad.

Abstract: A chemical mechanical polishing apparatus includes a platen to hold a polishing pad, a carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, and a temperature control system including a source of a fluid medium and one or more openings positioned over the platen and separated from the polishing pad and configured for the fluid medium to flow onto the polishing pad to heat or cool the polishing pad.