Abstract: A dielectric waveguide power limiter for a self-oscillating mixer operating n millimeter-wave frequencies. The limiter includes a high resistivity silicon dielectric waveguide and a Gunn oscillator. A plurality of dielectric resonators each including a high uniaxial anisotropy ferrite sphere embedded therein are positioned between the power input end of the waveguide and the Gunn oscillator.

Abstract: A millimeter wave line scanner is disclosed providing steered fan-shaped ms from opposite faces at substantially equal angles of a semiconductor waveguide, rectangular in cross section, and having a plurality of equally spaced metallic perturbations or strips disposed on one of the two radiating sides or faces. Different angles of scan are selectively obtained by means of at least one distributed longitudinal PIN diode formed on an adjoining side of the semiconductor waveguide having electrical circuit means coupled thereto for controlling the diode's conductivity which acts to change the guide wavelength and accordingly cause a variation in radiation angle of the two equal beams radiating in opposite directions and by means coupling energy of changing frequency to the semiconductor waveguide.

Abstract: The activity of PGE.sub.1 in inhibiting aggregation of blood platelets is enhanced by employing PGE.sub.1 in combination with certain inhibitors of cyclic 3',5'-adenosine monophosphate phosphodiesterase (PDE).

Abstract: A method of fabricating semiconductor devices having a long lifetime for the minority charge carriers by applying a voltage across one electrode composed of a piece of intrinsic semiconductor material and another electrode composed of an alloy including an impurity. The two electrodes are moved into proximity to cause an arc to be drawn therebetween which etches out a region of the semiconductor and in turn vaporizes the alloy which is deposited and implanted in the etched region to form a junction device. In one form of device produced in accordance with the process a series of regions alternately of opposite conductivity (P and N) type are formed on the semiconductor in spaced relationship and the device is positioned in electrical contact with the surface of a semiconductor dielectric waveguide.

Abstract: A single element line scanner applicable to millimeter or submillimeter w beam steering which includes a semiconductor waveguide made of a high resistivity bulk single crystal intrinsic semiconductor material such as silicon. Parallel spaced radiator elements are disposed on one major or top surface of the semiconductor waveguide transverse to the direction of wave propagation along the waveguide. Parallel spaced PIN diodes are disposed on the other or bottom major surface of the semiconductor waveguide transverse to the direction of wave propagation. The PIN diodes are spaced close enough to prevent radiation from escaping outwardly from the bottom major surface and are provided with a variable forward bias to produce a conductivity sheet. The conductivity sheet on the bottom major surface is electronically modulated as a function of the bias current for a given frequency and the variation of such a conductivity sheet changes the wavelengths in the semiconductor waveguide.

Abstract: A quasi-optical integrated circuit which makes use of a high resistivity k single crystal intrinsic semiconductor as a low loss quasi-optical wave transmission medium for millimeter and submillimeter waves having one or more circuit elements or devices disposed either at or near the surface of a portion of the semiconductor, or formed within a portion of either the semiconductor transmission medium or a portion of a high resistivity single crystal intrinsic semiconductor appendage to said semiconductor transmission medium. By varying the potential applied to said elements or devices, one can control either the phase or the amplitude of quasi-optical wave propagation along the semiconductor waveguide; moreover, solid state devices such as quasi-optical generators, mixers and detectors can be formed within the semiconductor wave transmission medium itself.