Patents by Inventor Hartmut Enkisch
Hartmut Enkisch has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9778576Abstract: An illumination optical unit for microlithography illuminates an object field with illumination light. The unit includes a first facet mirror that has a plurality of first facets, and a second facet mirror that has a plurality of second facets. The unit has facet pairs which include respectively a facet of the first facet mirror and a facet of the second facet mirror which predefine a plurality of illumination channels for illuminating the object field. At least some of the illumination channels have in each case an assigned polarization element for predefining an individual polarization state of the illumination light guided in the respective illumination channel.Type: GrantFiled: February 18, 2016Date of Patent: October 3, 2017Assignee: Carl Zeiss SMT GmbHInventors: Damian Fiolka, Michael Totzeck, Hartmut Enkisch, Stephan Muellender
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Patent number: 9720329Abstract: The invention concerns a projection objective of a microlithographic projection exposure apparatus designed for EUV, for imaging an object plane illuminated in operation of the projection exposure apparatus into an image plane. The projection objective has at least one mirror segment arrangement comprising a plurality of separate mirror segments. Associated with the mirror segments of the same mirror segment arrangement are partial beam paths which are different from each other and which respectively provide for imaging of the object plane (OP) into the image plane (IP). The partial beam paths are superposed in the image plane (IP). At least two partial beams which are superposed in the same point in the image plane (IP) were reflected by different mirror segments of the same mirror segment arrangement.Type: GrantFiled: March 15, 2016Date of Patent: August 1, 2017Assignee: Carl Zeiss SMT GmbHInventors: Hartmut Enkisch, Stephan Muellender, Hans-Juergen Mann, Rolf Freimann
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Publication number: 20170176741Abstract: A mirror element, in particular for a microlithographic projection exposure apparatus. According to one aspect, the mirror element includes a substrate (111, 112, 113, 114, 115, 211, 212, 213, 311a-311m, 411, 412, 413) and a layer stack (121, 122, 123, 124, 125, 221, 222, 223, 321a-321m, 421, 422, 423) on the substrate. The layer stack has at least one reflection layer system, wherein a curvature of the mirror element is generated on the basis of a setpoint curvature for a predetermined operating temperature by a non-vanishing bending force exerted by the layer stack, wherein the generated curvature varies by no more than 10% over a temperature interval (?T) of at least 10 K.Type: ApplicationFiled: December 16, 2016Publication date: June 22, 2017Inventors: Hartmut ENKISCH, Martin HERMANN, Christoph NOTTBOHM
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Patent number: 9606446Abstract: A reflective optical element of an optical system for EUV lithography and an associated manufacturing method. The reflective optical element (20) includes a multilayer system (23, 83) for reflecting an incident electromagnetic wave having an operating wavelength in the EUV range, the reflected wave having a phase ?, and a capping layer (25, 85) made from a capping layer material. The method includes determining a dependency according to which the phase of the reflected wave varies with the thickness d of the capping layer, determining a linearity-region in the dependency in which the phase of the reflected wave varies substantially linearly with the thickness of the capping layer, and creating a thickness profile in the capping layer such that both the maximum thickness and the minimum thickness in the thickness profile are in the linearity-region.Type: GrantFiled: June 5, 2015Date of Patent: March 28, 2017Assignee: CARL ZEISS SMT GMBHInventors: Norbert Wabra, Boris Bittner, Martin Von Hodenberg, Hartmut Enkisch, Stephan Muellender, Olaf Conradi
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Patent number: 9568845Abstract: A mirror including a substrate and a reflective coating that includes a first group of layers and a second group of layers arranged between the substrate and the first group of layers. Both the first and second groups of layers include a plurality of alternating first material layers and second material layers, arranged one above another. The refractive index of the first material for radiation in the range of 5-30 nm is greater than the refractive index of the second material in that wavelength range. The first group of layers is configured to have a number of layers that is greater than 20, such that, upon irradiation with radiation having a wavelength in the range of 5-30 nm, less than 20% of the radiation reaches the second group of layers, which has a layer thickness variation for correcting the surface form of the mirror.Type: GrantFiled: March 12, 2012Date of Patent: February 14, 2017Assignee: Carl Zeiss SMT GmbHInventors: Martin Rocktaeschel, Hartmut Enkisch, Franz-Josef Stickel, Oliver Natt, Hans-Juergen Mann, Sascha Migura
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Publication number: 20160377984Abstract: A mirror, in particular for a microlithographic projection exposure apparatus has an optically effective surface, wherein the mirror has a reflectivity of at least 0.5 for electromagnetic radiation which has a prescribed working wavelength and impinges on the optically effective surface at an angle of incidence based on the respective surface normal of at least 65°, wherein the mirror has at least one layer (160, 170, 320) which comprises a compound of an element of the second period and an element of the 4d transition group, wherein the mirror has a protective layer (430, 530, 630, 730) arranged on top in the direction of the optically effective surface, wherein the material of the layer (420, 510, 620, 705) arranged in each case underneath the protective layer in the direction of the optically effective surface has a lower absorption than the material of the protective layer (430, 530, 630, 730).Type: ApplicationFiled: September 13, 2016Publication date: December 29, 2016Inventor: Hartmut ENKISCH
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Publication number: 20160342093Abstract: A method for producing a mirror element, in particular for a microlithographic projection exposure apparatus includes: providing a substrate (101, 102, 103, 104, 201, 202, 301, 302, 401, 402, 501, 502, 801, 901, 951, 961); and forming a layer stack (111, 112, 113, 114, 211, 212, 311, 312, 411, 412, 511, 512) on the substrate, wherein the layer stack is formed so that a setpoint curvature of the mirror element for a predetermined operating temperature is generated by a bending force exerted by the layer stack, wherein the substrate has a curvature deviating from the setpoint curvature of the mirror element prior to the formation of the layer stack, and wherein the bending force exerted by the layer stack is at least partly generated by virtue of a post-treatment for changing the layer tension of the layer stack.Type: ApplicationFiled: August 1, 2016Publication date: November 24, 2016Inventors: Hartmut ENKISCH, Peter HUBER, Sebastian STROBEL
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Publication number: 20160266499Abstract: A reflective optical element (50) having a substrate (52) and a multilayer system (51) that has a plurality of partial stacks (53), each with a first layer (54) of a first material and a second layer (55) of a second material. The first material and the second material differ from one another in refractive index at an operating wavelength of the optical element. Each of the partial stacks has a thickness (Di) and a layer thickness ratio (?i), wherein the layer thickness ratio is the quotient of the thickness of the respective first layer and the partial stack thickness (Di). In a first section of the multilayer system, for at least one of the two variables of partial stack thickness (Di) and layer thickness ratio (?i), the mean square deviation from the respective mean values therefor is at least 10% less than in a second section of the multilayer system.Type: ApplicationFiled: May 20, 2016Publication date: September 15, 2016Inventors: Hartmut ENKISCH, Hans-Jochen PAUL, Thomas SCHICKETANZ, Oliver DIER, Joern WEBER, Christian GRASSE, Ralf WINTER, Sebastian STROBEL
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Publication number: 20160195820Abstract: An illumination optical unit for microlithography illuminates an object field with illumination light. The unit includes a first facet mirror that has a plurality of first facets, and a second facet mirror that has a plurality of second facets. The unit has facet pairs which include respectively a facet of the first facet mirror and a facet of the second facet mirror which predefine a plurality of illumination channels for illuminating the object field. At least some of the illumination channels have in each case an assigned polarization element for predefining an individual polarization state of the illumination light guided in the respective illumination channel.Type: ApplicationFiled: February 18, 2016Publication date: July 7, 2016Inventors: Damian Fiolka, Michael Totzeck, Hartmut Enkisch, Stephan Muellender
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Publication number: 20160195817Abstract: The invention concerns a projection objective of a microlithographic projection exposure apparatus designed for EUV, for imaging an object plane illuminated in operation of the projection exposure apparatus into an image plane. The projection objective has at least one mirror segment arrangement comprising a plurality of separate mirror segments. Associated with the mirror segments of the same mirror segment arrangement are partial beam paths which are different from each other and which respectively provide for imaging of the object plane (OP) into the image plane (IP). The partial beam paths are superposed in the image plane (IP). At least two partial beams which are superposed in the same point in the image plane (IP) were reflected by different mirror segments of the same mirror segment arrangement.Type: ApplicationFiled: March 15, 2016Publication date: July 7, 2016Inventors: Hartmut Enkisch, Stephan Muellender, Hans-Juergen Mann, Rolf Freimann
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Patent number: 9341958Abstract: A deflection mirror (1, 501, etc.) for a microlithography projection exposure apparatus for illuminating an object field in an object plane of the projection exposure apparatus (1067) using the deflection mirror with grazing incidence. This deflection mirror has a substrate (3, 503, etc.) and at least one layer system (5, 505, etc.), and during operation light impinges on said mirror at a multiplicity of angles of incidence, wherein the layer system is designed such that, for light having a wavelength of less than 30 nm, for an angle of incidence of between 55° and 70°, the variation of the reflectivity is less than 20%, in particular less than 12%.Type: GrantFiled: September 20, 2013Date of Patent: May 17, 2016Assignee: Carl Zeiss SMT GmbHInventors: Hartmut Enkisch, Stephan Muellender, Martin Endres
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Patent number: 9304405Abstract: An illumination optical unit for microlithography illuminates an object field with illumination light. The unit includes a first facet mirror that has a plurality of first facets, and a second facet mirror that has a plurality of second facets. The unit has facet pairs which include respectively a facet of the first facet mirror and a facet of the second facet mirror which predefine a plurality of illumination channels for illuminating the object field. At least some of the illumination channels have in each case an assigned polarization element for predefining an individual polarization state of the illumination light guided in the respective illumination channel.Type: GrantFiled: December 21, 2010Date of Patent: April 5, 2016Assignee: Carl Zeiss SMT GmbHInventors: Damian Fiolka, Michael Totzeck, Hartmut Enkisch, Stephan Muellender
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Patent number: 9285515Abstract: An imaging optical system has a plurality of mirrors. These image an object field in an object plane into an image field in an image plane. In the imaging optical system, the ratio of a maximum angle of incidence of imaging light) on reflection surfaces of the mirrors and an image-side numerical aperture of the imaging optical system is less than 33.8°. This can result in an imaging optical system which offers good conditions for a reflective coating of the mirror, with which a low reflection loss can be achieved for imaging light when passing through the imaging optical system, in particular even at wavelengths in the EUV range of less than 10 nm.Type: GrantFiled: November 8, 2013Date of Patent: March 15, 2016Assignee: Carl Zeiss SMT GmbHInventors: Hans-Juergen Mann, Wilheim Ulrich, Stephan Muellender, Hartmut Enkisch
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Publication number: 20160048083Abstract: An illumination system for an optical arrangement such as an EUV lithography apparatus, having: at least one optical element which has at least one optical surface, on which a coating which reflects illumination radiation is applied, and an actuator device aligning the optical surface in at least two angular positions in the radiation path. The coating either has a thickness (dOPT1) at which a mean value (½ (R1+R2)) formed from a thickness-dependent reflectivity (R1, R2) of the coating at the at least two angular positions is maximized or has a thickness (dOPT2) at which a maximum change (max(?R1/R1, ?R2/R2)) in the reflectivity (R1, R2) caused by a thickness tolerance of the coating is minimized at the respective angular positions or else the reflecting coating has a thickness (dO2) at which the reflectivity (R1, R2) of the coating has the same magnitude in the at least two angular positions.Type: ApplicationFiled: August 28, 2015Publication date: February 18, 2016Inventors: Martin ENDRES, Hartmut ENKISCH, Stig BIELING
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Publication number: 20150316851Abstract: A reflective optical element of an optical system for EUV lithography and an associated manufacturing method. The reflective optical element (20) includes a multilayer system (23, 83) for reflecting an incident electromagnetic wave having an operating wavelength in the EUV range, the reflected wave having a phase ?, and a capping layer (25, 85) made from a capping layer material. The method includes determining a dependency according to which the phase of the reflected wave varies with the thickness d of the capping layer, determining a linearity-region in the dependency in which the phase of the reflected wave varies substantially linearly with the thickness of the capping layer, and creating a thickness profile in the capping layer such that both the maximum thickness and the minimum thickness in the thickness profile are in the linearity-region.Type: ApplicationFiled: June 5, 2015Publication date: November 5, 2015Inventors: Norbert WABRA, Boris BITTNER, Martin VON HODENBERG, Hartmut ENKISCH, Stephan MUELLENDER, Olaf CONRADI
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Publication number: 20140132941Abstract: An imaging optical system has a plurality of mirrors. These image an object field in an object plane into an image field in an image plane. In the imaging optical system, the ratio of a maximum angle of incidence of imaging light) on reflection surfaces of the mirrors and an image-side numerical aperture of the imaging optical system is less than 33.8°. This can result in an imaging optical system which offers good conditions for a reflective coating of the mirror, with which a low reflection loss can be achieved for imaging light when passing through the imaging optical system, in particular even at wavelengths in the EUV range of less than 10 nm.Type: ApplicationFiled: November 8, 2013Publication date: May 15, 2014Applicant: Carl Zeiss SMT GmbHInventors: Hans-Juergen Mann, Wilheim Ulrich, Stephan Muellender, Hartmut Enkisch
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Publication number: 20140022525Abstract: A deflection mirror (1, 501, etc.) for a microlithography projection exposure apparatus for illuminating an object field in an object plane of the projection exposure apparatus (1067) using the deflection mirror with grazing incidence. This deflection mirror has a substrate (3, 503, etc.) and at least one layer system (5, 505, etc.), and during operation light impinges on said mirror at a multiplicity of angles of incidence, wherein the layer system is designed such that, for light having a wavelength of less than 30 nm, for an angle of incidence of between 55° and 70°, the variation of the reflectivity is less than 20%, in particular less than 12%.Type: ApplicationFiled: September 20, 2013Publication date: January 23, 2014Applicant: CARL ZEISS SMT GMBHInventors: Hartmut ENKISCH, Stephan MUELLENDER, Martin ENDRES
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Patent number: 8605255Abstract: An imaging optical system has a plurality of mirrors. These image an object field in an object plane into an image field in an image plane. In the imaging optical system, the ratio of a maximum angle of incidence of imaging light) on reflection surfaces of the mirrors and an image-side numerical aperture of the imaging optical system is less than 33.8°. This can result in an imaging optical system which offers good conditions for a reflective coating of the mirror, with which a low reflection loss can be achieved for imaging light when passing through the imaging optical system, in particular even at wavelengths in the EUV range of less than 10 nm.Type: GrantFiled: April 26, 2010Date of Patent: December 10, 2013Assignee: Carl Zeiss SMT GmbHInventors: Hans-Juergen Mann, Wilhelm Ulrich, Stephan Muellender, Hartmut Enkisch
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Publication number: 20130242278Abstract: The invention concerns a projection objective of a microlithographic projection exposure apparatus designed for EUV, for imaging an object plane illuminated in operation of the projection exposure apparatus into an image plane, wherein the projection objective has at least one mirror segment arrangement (160, 260, 280, 310, 410, 500) comprising a plurality of separate mirror segments (161-163; 261-266, 281-284; 311, 312; 411, 412; 510-540); and wherein associated with the mirror segments of the same mirror segment arrangement are partial beam paths which are different from each other and which respectively provide for imaging of the object plane (OP) into the image plane (IP), wherein said partial beam paths are superposed in the image plane (IP) and wherein at least two partial beams which are superposed in the same point in the image plane (IP) were reflected by different mirror segments of the same mirror segment arrangement.Type: ApplicationFiled: April 8, 2013Publication date: September 19, 2013Applicant: Carl Zeiss SMT GmbHInventors: Hartmut Enkisch, Stephan Muellender, Hans-Juergen Mann, Rolf Freimann
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Patent number: 8457281Abstract: A method for producing a multilayer coating (17) for reflecting radiation in the soft X-ray or EUV wavelength range on an optical element (8, 9) operated at an operating temperature (TOP) of 30° C. or more, including: determining an optical design for the multilayer coating (17) which defines an optical desired layer thickness (nOP dOP) of the layers (17.1, 17.2) of the multilayer coating (17) at the operating temperature (TOP), and applying the layers (17.1, 17.2) of the multilayer coating (17) with an optical actual layer thickness (nB dB) chosen such that a layer thickness change(nOP dOP?nB dB) caused by thermal expansion of the layers (17.1, 17.2) between the coating temperature (TB) and the operating temperature (TOP) is compensated for. Also provided are an associated optical element (8, 9) and a projection exposure apparatus having at least one such optical element (8, 9).Type: GrantFiled: December 10, 2010Date of Patent: June 4, 2013Assignee: Carl Zeiss SMT GmbHInventors: Hartmut Enkisch, Stephan Muellender, Martin Endres