Abstract: A sputtering device to sputter a liquid target. The sputtering device including a trough to receive a liquid target material and a device to stir or agitate the liquid target material. The device configured to degas the liquid target material or/and to dissipate solid particles or islands on a surface of the target or/and to move such particles or islands from an active surface region to a passive surface region and/or vice-versa, whereby the passive surface region is at least 50% less exposed to sputtering as the active surface region.

Abstract: In a magnetron sputtering reaction space a magnetron magnetic field is generated. A further magnetic field is generated in the reaction space whereby a resultant magnetic field has a directional component parallel to a target plane which is larger than the directional component of the magnetron magnetic field parallel to the target plane in the reaction space.

Abstract: In a magnetron sputtering reaction space a magnetron magnetic field is generated. A further magnetic field is generated in the reaction space whereby a resultant magnetic field has a directional component parallel to a target plane which is larger than the directional component of the magnetron magnetic field parallel to the target plane in the reaction space.

Abstract: A substrate processing apparatus includes a base with a process-side surface and a substrate support arranged on the process-side surface and designed to carry a substrate at its periphery. The periphery, more specifically the plane defined by the periphery, is spaced apart from the process-side surface. The substrate processing apparatus also includes a radiation sensor adapted to measure electromagnetic radiation arranged on a side of a back-side surface of the base. A radiation channel is arranged between the radiation sensor and the periphery of the substrate support, more specifically between the radiation sensor and the plane defined by the periphery, wherein the radiation channel is at least partially permeable to electromagnetic radiation.

Abstract: In a magnetron sputtering reaction space a magnetron magnetic field is generated. A further magnetic field is generated in the reaction space whereby a resultant magnetic field has a directional component parallel to a target plane which is larger than the directional component of the magnetron magnetic field parallel to the target plane in the reaction space.

Abstract: A sputtering device to sputter a liquid target. The sputtering device including a trough to receive a liquid target material and a device to stir or agitate the liquid target material. The device configured to degas the liquid target material or/and to dissipate solid particles or islands on a surface of the target or/and to move such particles or islands from an active surface region to a passive surface region and/or vice-versa, whereby the passive surface region is at least 50% less exposed to sputtering as the active surface region.

Abstract: Within a vacuum recipient plasma enhanced atomic layer deposition (PEALD) is performed in that precursor gas is inlet from a precursor gas inlet and a monomolecular layer is deposited on a substrate by adsorption. Subsequently a reactive gas is inlet through a reactive gas inlet and the monomolecular layer on the substrate is reacted, enhanced by UHF plasma which is generated to be distributed along a geometric locus which surrounds a substrate carrier and thus the substrate on this carrier.

Abstract: In a magnetron sputtering reaction space a magnetron magnetic field is generated. A further magnetic field is generated in the reaction space whereby a resultant magnetic field has a directional component parallel to a target plane which is larger than the directional component of the magnetron magnetic field parallel to the target plane in the reaction space.

Abstract: A substrate processing apparatus includes a base with a process-side surface and a substrate support arranged on the process-side surface and designed to carry a substrate at its periphery. The periphery, more specifically the plane defined by the periphery, is spaced apart from the process-side surface. The substrate processing apparatus also includes a radiation sensor adapted to measure electromagnetic radiation arranged on a side of a back-side surface of the base. A radiation channel is arranged between the radiation sensor and the periphery of the substrate support, more specifically between the radiation sensor and the plane defined by the periphery, wherein the radiation channel is at least partially permeable to electromagnetic radiation.

Abstract: A sputtering source includes two facing plate shaped targets and a magnet arrangement along each of the targets. An open coating outlet area from the reaction space between the targets is limited by facing rims of the two plate shaped targets. Catcher plates along each of the rims respectively project in a direction from the rims towards each other into the open coating outlet area, thereby restricting the open coating outlet area as limited by the mutually facing rims of the two plate shaped targets.

Abstract: For producing a directional layer for instance with constant nominal directionality, such as a low-retentivity layer with a preferred direction of magnetization or a support layer for such a layer by cathode sputtering on a substrate surface (4), the coating process takes place in a manner whereby particles emanating from a target surface (6) impinge predominantly from directions whose projections onto the substrate surface (4) lies within a preferred angular range surrounding the nominal direction. This is achieved for instance by positioning a collimator (8), encompassing plates (9) that extend at a normal angle to the substrate surface (4) parallel to the nominal direction in front of the substrate surface (4), but in lieu of or in addition to such positioning the location or movement of the substrate surface (4) relative to the target surface (6) can also be suitably adjusted or controlled.

Abstract: A substrate processing arrangement exhibits a thermal cavity with two reflective surfaces and a carbon heater for effectively heating substrates to temperatures of 750° C. and more. It has been shown, that even substrates with low absorption properties in the infrared part of the spectrum (glas, silicon, sapphire) can be effectively heated by “sandwiching” a substrate and a heating element between two reflective surfaces, which can be established by a mirror and the target of a PVD source.

Abstract: So as to provide a target arrangement with improved mounting and dismounting ability, the target arrangement comprises a plate along a plane (E) which has a border (7) defined by a first wedge surface (5u) angled to the addressed general plane (E) and a second wedge surface (5l) which is substantially planar as well and angled with respect to the generic plane (E). The two wedge surfaces mutually convert in a direction along the addressed plane (E) and from a more central area of the plate outwardly.

Abstract: A magnetron sputtering apparatus comprises, within a vacuum chamber (1), a substrate support (2) holding a substrate (3) with an upward-facing plane substrate surface (4) which is to be coated. The substrate (3) may be a disk of, e.g., 200 mm diameter. At a distance from a centre plane (5) two oblong targets (7a, 7b) are symmetrically arranged which are inclined towards the centre plane (5) so as to enclose an acute angle (?; ??) of between 8° and 35° with the plane defined by the substrate surface (4). Above the substrate surface (4) a collimator (13) with equidistant rectangular collimator plates is arranged. With this configuration high uniformity of the coating is achievable, in particular, if the distance of the collimator (13) from the substrate surface (4) is chosen as a multiple n of the extension of the collimator (13) perpendicular to the said surface, preferably with n equalling 1 or 2, for suppressing ripple.

Abstract: The apparatus (1) for coating a substrate (14) by reactive sputtering comprises an axis (8), at least two targets (11,12) in an arrangement symmetrically to said axis (8) and a power supply connected to the targets (11,12), wherein the targets are alternatively operable as cathode and anode. The method is a method for manufacturing a coated substrate (14) by coating a substrate (14) by reactive sputtering in an apparatus (1) comprising an axis (8). The method comprises a) providing a substrate (14) to be coated; b) providing at least two targets (11,12) in an arrangement symmetrically to said axis (8); c) alternatively operating said targets (11,12) as cathode and anode during coating. Preferably, the targets (11,12) are rotated during sputtering and/or the targets are arranged concentrically, with an innermost circular target surrounded by at least one ring-shaped outer target.

Abstract: To provide, in a magnetron sputtering apparatus for coating a substrate with a material of high magnetic permeability, for a sufficient trapping field of at least 24 kA/m (300 Oe) field strength above a target surface a target assembly consists of target plates (34, 33, 32) separated by through-going slits (35, 36) which the magnetic field must cross and to a support plate (31) consisting of copper to which the backside of the target is fixed. In order to avoid any release of material from the support plate and deposition of the same on the substrate each of the slits (35, 36) is shaped in such a way that there is no line-of-sight connection between the gap at the target surface and the support plate (31) at the backside of the target through the slit, the latter having, e.g., two sections which are perpendicular to the target surface, one ending at the target surface and the other at the support plate, and which are laterally offset and connected by a third section which is parallel to the target surface.

Abstract: For producing a directional layer for instance with constant nominal directionality, such as a low-retentivity layer with a preferred direction of magnetization or a support layer for such a layer by cathode sputtering on a substrate surface (4), the coating process takes place in a manner whereby particles emanating from a target surface (6) impinge predominantly from directions at which their projection onto the substrate surface (4) lies within a preferred angular range surrounding the nominal direction. This is achieved for instance by positioning a collimator (8), encompassing plates (9) that extend at a normal angle to the substrate surface (4) parallel to the nominal direction in front of the substrate surface (4), but in lieu of or in addition to such positioning the location or movement of the substrate surface (4) relative to the target surface (6) can also be suitably adjusted or controlled.

Abstract: Apparatus and methods for sputtering are provided, which are useful for sputtering high magnetization saturation materials. In one embodiment, a plurality of sputtering target arrangements are arranged concentrically, wherein independent magnetic fields can be generated at least partially above the respective target arrangements. One or several target arrangements can include respective upper and lower parts that are spaced from one another but arranged in essentially parallel planes. Methods include co-sputtering from multiple target arrangements to produce sputtered alloy layers on a substrate, as well as alternately sputtering from different target arrangements to produce a plurality of sputtered layers on the substrate.

Abstract: So as to provide a target arrangement with improved mounting and dismounting ability, the target arrangement comprises a plate along a plane (E) which has a border (7) defined by a first wedge surface (5u) angled to the addressed general plane (E) and a second wedge surface (5l) which is substantially planar as well and angled with respect to the generic plane (E). The two wedge surfaces mutually convert in a direction along the addressed plane (E) and from a more central area of the plate outwardly.

Abstract: In a substrate processing system for the treatment of substrates in vacuum two linear assemblies of process modules are stacked one above the other and connected by at least one lift module allowing for the transport from the first set to the second set. Along the traveling path through the first and second set of process modules there is arranged a linear synchronous motor. A substrate carrier with rails interacting with rollers mounted in the processing system is being held by the attractive forces of said linear synchronous motor in vertical position.