Abstract: A photoelectric conversion device includes: a substrate; a first photoelectric conversion element including a first substrate electrode, a first active layer and a first counter electrode; a second photoelectric conversion element including a second substrate electrode, a second active layer, and a second counter electrode; and a connection connecting the first counter electrode and the second substrate electrode. The second active layer is represented by a composition formula: A?BX?, where A denotes at least one cation selected from monovalent cations, B denotes at least one cation selected from bivalent cations, and X denotes at least one ion selected from monovalent halogen ions; and the second active layer has a first and a second compound layer, the first compound layer containing a first compound satisfying 0.95??, and 2.95??, and the second compound layer containing a second compound satisfying ?<0.95, and ?<2.95.

Abstract: A photoelectric conversion element comprises: a photoelectric conversion layer; a first compound layer including a first supporting member and a first compound, the first compound being supported by the first supporting member, being not in contact with the photoelectric conversion layer, and being liquid or gelatinous in an environment to use the element; and a second compound layer including a second supporting member and a second compound, the second compound being supported by the second supporting member, being not in contact with the photoelectric conversion layer and the first compound, and being liquid or gelatinous in the environment.

Abstract: A photoelectric conversion element includes: a first photoelectric conversion layer including: a bottom electrode; a photoelectric conversion layer; and a top electrode; and a second photoelectric conversion part including: a bottom electrode; a photoelectric conversion part; and a top electrode. A conductive layer is formed on the bottom electrode. The top electrode and the bottom electrode are electrically connected by a conductive portion and the conductive layer. The conductive portion is formed of a part of the top electrode filled in a first groove that makes a surface of the conductive layer exposed and separates a photoelectric conversion layer and a photoelectric conversion layer from each other. The top electrodes are physically separated by a second groove provided to make a step surface of a stepped portion provided in the photoelectric conversion layer exposed and have a bottom surface thereof overlap the surface of the conductive layer.

Abstract: A method for manufacturing a photoelectric conversion device, that includes: forming a laminate structure of a substrate, a transparent electrode, an active layer produced by wet-coating, and a counter electrode, stacked in this order; and thereafter forming a cavity by: (a) pressing an adhesive material just against a defect formed on the surface of said counter electrode, and then peeling off said adhesive material together with said defect and the peripheral part thereof; or (b) sucking a defect formed on the surface of said counter electrode, so as to remove said defect and the peripheral part thereof, where said cavity penetrates through the counter electrode and unreached to the transparent electrode.

Abstract: A photoelectric conversion device of an embodiment includes: a first photoelectric conversion part including a first transparent electrode provided on a transparent substrate, a first active layer, and a first counter electrode; and a second photoelectric conversion part including a second transparent electrode, a second active layer, and a second counter electrode. A conductive layer containing noble metal as a main component is formed on a partial region of the second transparent electrode, and a fine particle layer having a stack of fine particles is formed on the conductive layer. The first counter electrode and the second transparent electrode are electrically connected by a connection part having a scribe groove penetrating through the fine particle layer from the second active layer and exposing a surface of the conductive layer, and a conductive layer having a part of the first counter electrode filled in the scribe groove.

Abstract: A photoelectric conversion element includes: a first photoelectric conversion layer including: a bottom electrode; a photoelectric conversion layer; and a top electrode; and a second photoelectric conversion part including: a bottom electrode; a photoelectric conversion part; and a top electrode. A conductive layer is formed on the bottom electrode. The top electrode and the bottom electrode are electrically connected by a conductive portion and the conductive layer. The conductive portion is formed of a part of the top electrode filled in a first groove that makes a surface of the conductive layer exposed and separates a photoelectric conversion layer and a photoelectric conversion layer from each other. The top electrodes are physically separated by a second groove provided to make a step surface of a stepped portion provided in the photoelectric conversion layer exposed and have a bottom surface thereof overlap the surface of the conductive layer.

Abstract: A photoelectric conversion device includes: a substrate; a first photoelectric conversion element including a first substrate electrode, a first active layer and a first counter electrode; a second photoelectric conversion element including a second substrate electrode, a second active layer, and a second counter electrode; and a connection connecting the first counter electrode and the second substrate electrode. The second active layer is represented by a composition formula: A?BX?, where A denotes at least one cation selected from monovalent cations, B denotes at least one cation selected from bivalent cations, and X denotes at least one ion selected from monovalent halogen ions; and the second active layer has a first and a second compound layer, the first compound layer containing a first compound satisfying 0.95??, and 2.95??, and the second compound layer containing a second compound satisfying ?<0.95, and ?<2.95.

Abstract: A photoelectric conversion device of an embodiment includes: a first photoelectric conversion part including a first transparent electrode provided on a transparent substrate, a first active layer, and a first counter electrode; and a second photoelectric conversion part including a second transparent electrode, a second active layer, and a second counter electrode. A conductive layer containing noble metal as a main component is formed on a partial region of the second transparent electrode, and a fine particle layer having a stack of fine particles is formed on the conductive layer. The first counter electrode and the second transparent electrode are electrically connected by a connection part having a scribe groove penetrating through the fine particle layer from the second active layer and exposing a surface of the conductive layer, and a conductive layer having a part of the first counter electrode filled in the scribe groove.

Abstract: A photoelectric conversion device of an embodiment includes: a first photoelectric conversion part including a first transparent electrode provided on a transparent substrate, a first active layer, and a first counter electrode; and a second photoelectric conversion part including a second transparent electrode, a second active layer, and a second counter electrode. A conductive layer containing noble metal as a main component is formed on a partial region of the second transparent electrode, and a fine particle layer having a stack of fine particles is formed on the conductive layer. The first counter electrode and the second transparent electrode are electrically connected by a connection part having a scribe groove penetrating through the fine particle layer from the second active layer and exposing a surface of the conductive layer, and a conductive layer having a part of the first counter electrode filled in the scribe groove.

Abstract: The present embodiments provide a flexible, lightweight and highly efficient photoelectric conversion device and further provide a manufacturing method thereof. The photoelectric conversion device according to the embodiment comprises a laminate structure of a substrate, an ITO electrode, a photoelectric conversion layer and a counter electrode. When subjected to surface X-ray diffraction analysis, the ITO electrode shows an X-ray diffraction profile characterized in that the peak at a diffraction peak position in the range of 2?=30.6±0.5° has a half-width of 1.0° or less. The ITO electrode in the device can be formed by forming an amorphous-phase ITO film on the substrate and then by subjecting the film to annealing treatment at a temperature of 200° or less.

Abstract: A photoelectric conversion material dispersion liquid of an embodiment includes: perovskite crystal particles having a composition represented as ABX3, where A is a monovalent cation of an amine compound, B is a divalent cation of a metal element, and X is a monovalent anion of a halogen element, and having an average particle diameter of not less than 10 nm nor more than 10000 nm; and a dispersion medium which is composed of a poor solvent to the perovskite crystal particles, and in which the perovskite crystal particles are dispersed.

Abstract: A photoelectric conversion element comprises: a photoelectric conversion layer; a first compound layer including a first supporting member and a first compound, the first compound being supported by the first supporting member, being not in contact with the photoelectric conversion layer, and being liquid or gelatinous in an environment to use the element; and a second compound layer including a second supporting member and a second compound, the second compound being supported by the second supporting member, being not in contact with the photoelectric conversion layer and the first compound, and being liquid or gelatinous in the environment.

Abstract: The embodiment provides a method and an apparatus for manufacturing a semiconductor element showing high conversion efficiency and having a perovskite structure. The embodiment is a method for manufacturing a semiconductor element comprising an active layer having a perovskite structure. Said active layer is produced by the steps of: forming a coating film by directly or indirectly coating a first or second electrode with a coating solution containing a precursor compound for the perovskite structure and an organic solvent capable of dissolving said precursor compound; and then starting to blow a gas onto said coating film before formation reaction of the perovskite structure is completed in said coating film. Another embodiment is an apparatus for manufacturing a semiconductor element according to the above method.

Abstract: A method for manufacturing a photoelectric conversion device, that includes: forming a laminate structure of a substrate, a transparent electrode, an active layer produced by wet-coating, and a counter electrode, stacked in this order; and thereafter forming a cavity by: (a) pressing an adhesive material just against a defect formed on the surface of said counter electrode, and then peeling off said adhesive material together with said defect and the peripheral part thereof; or (b) sucking a defect formed on the surface of said counter electrode, so as to remove said defect and the peripheral part thereof, where said cavity penetrates through the counter electrode and unreached to the transparent electrode.

Abstract: A method of manufacturing a photoelectric conversion device of an embodiment includes: forming a layer on a substrate; and drying this layer. The layer contains a p-type semiconductor, an n-type semiconductor, and a compound represented by the following formula (1). The layer is dried under pressures of 100 Pa or less and substrate temperatures of 40 to 200° C.

Abstract: The present embodiments provide a highly durable semiconductor element capable of generating electricity or emitting light with high efficiency, and further provide a manufacturing method thereof. The semiconductor element according to the embodiment comprises a first electrode, a second electrode, an active layer and a substrate, and is characterized in that the active layer contains crystals oriented anisotropically. For manufacturing the element, the active layer is produced by the steps of: applying a coating solution containing precursor compounds of the active layer and an organic solvent capable of dissolving the precursor compounds, to form a coating film; and then growing the crystals in a specific direction parallel to the surface of the coating film.

Abstract: A photoelectric conversion device of an embodiment includes: a first photoelectric conversion part including a first transparent electrode, a first organic active layer, and a first counter electrode; and a second photoelectric conversion part including a second transparent electrode, a second organic active layer, and a second counter electrode, which are provided on a transparent substrate. A conductive layer is formed on a partial region, of the second transparent electrode, which is adjacent to the first transparent electrode. The first counter electrode and the second transparent electrode are electrically connected by a connection part including a groove formed from a surface of the second organic active layer to reach an inside of the conductive layer and a part of the first counter electrode filled in the groove.

Abstract: The present embodiments provide a photoelectric conversion device having a laminate structure of a substrate, a transparent electrode, an active layer, and a counter electrode, stacked in this order. In the device, a cavity is provided on the counter electrode-side. The cavity penetrates through the counter electrode and has an opening area larger in the counter electrode than in the active layer.

Abstract: A solar cell module according to an embodiment includes: a light transmissive first substrate; a second substrate; at least one cell array disposed between the first substrate and the second substrate, the cell array including a plurality of cells arranged, each of the cells including a first electrode disposed on the first substrate, an organic photoelectric conversion film disposed on the first electrode, and a second electrode disposed on the organic photoelectric conversion film; a plurality of light transmissive partition walls disposed at portions on the first substrate, the portions being located between adjacent ones of the cells and at both end portions of the cell array; and a first resin film disposed between the second substrate and each of the cells between adjacent ones of the partition walls, the cells being connected in series.

Abstract: A photoelectric conversion device of an embodiment includes: a first photoelectric conversion part including a first transparent electrode provided on a transparent substrate, a first active layer, and a first counter electrode; and a second photoelectric conversion part including a second transparent electrode, a second active layer, and a second counter electrode. A conductive layer containing noble metal as a main component is formed on a partial region of the second transparent electrode, and a fine particle layer having a stack of fine particles is formed on the conductive layer. The first counter electrode and the second transparent electrode are electrically connected by a connection part having a scribe groove penetrating through the fine particle layer from the second active layer and exposing a surface of the conductive layer, and a conductive layer having a part of the first counter electrode filled in the scribe groove.