Abstract: A projection optical system that projects a pattern on a first surface onto a second surface, and has a numerical aperture of 0.85 or higher includes an optical element, and an antireflection coating applied to the optical element, the antireflection coating including plural layers, an end layer having a refractive index of tan { sin?1(NA)} or greater, where NA is the numerical aperture of the projection optical system.

Abstract: An exposure apparatus includes a projection optical system for projecting a pattern of a reticle onto an object, the projection optical system having a numerical aperture of 0.85 or higher, wherein the projection optical system includes an optical element, and an antireflection coating applied to the optical element, the antireflection coating including plural layers, and wherein an incident light angle upon the optical element and an exit light angle from the optical element on a surface of the antireflection coating which contacts gas do not exceed a Brewster angle determined by a relative refractive index between the gas and a final layer among the plural layers, which is the closest to the gas.

Abstract: An exposure apparatus includes a projection optical system for projecting a pattern on a mask onto an object to be exposed, a final surface of the projection optical system and a surface of the object being immersed in a fluid, and a plane-parallel plate arranged between the projection optical system and the object, wherein the plane-parallel plate includes a first surface and a second surface that serves as a back surface of the first surface and opposes to the object, both the first and second surfaces being immersed in the fluid.

Abstract: A projection optical system that projects a pattern on a first surface onto a second surface, and has a numerical aperture of 0.85 or higher includes an optical element, and an antireflection coating applied to the optical element, the antireflection coating including plural layers, an end layer having a refractive index of tan{sin−1(NA)} or greater, where NA is the numerical aperture of the projection optical system.

Abstract: Disclosed is an illumination system which includes a first optical system for combining plural light fluxes from plural light sources and for projecting the plural light fluxes to a surface to be illuminated, a second optical system for separating a portion of one of the combined plural light fluxes, and a first detecting system for detecting the light quantity of the portion separated by the second optical system.

Abstract: An exposure apparatus includes a projection optical system for projecting a pattern created on a mask onto an object, the projection optical system having a numerical aperture on a side of the object is 0.7 or higher; and a shielding plate for shielding around an area onto which the pattern on the mask is projected at the time of projection.

Abstract: Disclosed is an illumination system which includes a first optical system for combining plural light fluxes from plural light sources and for projecting the plural light fluxes to a surface to be illuminated, a second optical system for separating a portion of one of the combined plural light fluxes, and a first detecting system for detecting the light quantity of the portion separated by the second optical system.

Abstract: A scanning exposure apparatus, wherein a pattern of a surface of a first object placed on a first stage is illuminated with exposure light from a slit aperture of an illumination system, and wherein the pattern of the first object is projected through a projection optical system onto a surface of a second object placed on a second stage while relatively and scanningly moving the first and second stages in a widthwise direction of the slit aperture, in a timed relation and at a speed ratio corresponding to a projection magnification of the projection optical system.

Abstract: A surface position detection device detects the position of a surface to be detected with an uneven profile. The device includes an illumination unit, first and second imaging optical systems, a photodetector, and a position detector. The first imaging optical system projects the image of the object onto a surface to be detected. The second imaging optical system re-focuses the image of the object reflected from the surface to be detected. The photodetector detects the image re-focused by the second imaging optical system. The position detector detects the position of the surface to be detected, based on the signal generated by the photodetector. The first imaging optical system comprises a first aperture member defining the cone angle of a light ray flux projected onto the object, which is denoted as .phi.TRANSMIT.

Abstract: An exposure method for use with an exposure apparatus that includes a projection optical system for projecting a pattern of a first object onto a second object, a mark position detecting optical system having a detection zone at a predetermined position with respect to the projection optical system, for detecting a position of a mark of the second object, and a plurality of surface position detecting devices having different detection zones at different positions predetermined with respect to the projection optical system, for detecting a surface position of the second object. The mark is moved into the detection zone of the mark position detecting optical system, and the surface position of the second object is detected by using the surface position detecting devices. The surface position detecting devices respectively produce plural detection results.

Abstract: A registration method is usable with projection optical system for projecting first and second patterns of a first object simultaneously upon a second object having a surface step, for measuring at different locations the surface position of the second object with respect to the direction of an optical axis of the projection optical system prior to the pattern projection to bring the surface of the second object into coincidence with an image plane of the projection optical system on the basis of the measurement, wherein the first pattern has a smaller depth of focus than that of the second pattern. The method includes bringing the surface position of the second object, at the location whereat the first pattern is to be projected, into coincidence with the image plane of the projection optical system; and correcting any tilt of the surface of the second object with respect to the image plane of the projection optical system.

Abstract: A projection exposure apparatus including a mask stage for supporting a mask, a wafer stage for supporting a wafer, and a projection optical system for projecting, on the wafer, an image of a circuit pattern of the mask, is disclosed. There are provided a surface position detecting system for detecting position of a surface of the wafer with respect to a direction of an optical axis of the projection optical system, an adjusting device for adjusting an interval between the wafer and the projection optical system, to position the wafer surface at a focus position of the projection optical system, and an outputting portion operable to direct a light beam to a reflection surface, provided at a predetermined site on the wafer stage, and to receive reflection light coming from the reflection surface through the projection optical system, the outputting portion producing a signal corresponding to a positional relationship between the reflection surface and the focus position of the projection optical system.

Abstract: A surface position detecting device including an irradiating optical system for irradiating first and second points on a surface with first and second light patterns, respectively; a light receiving optical system having an optical axis inclined with respect to the surface, for projecting upon a predetermined image plane images of the first and second light patterns on the surface, respectively, wherein the light receiving optical system includes a common primary optical and an auxiliary optical arrangement disposed between the predetermined image plane and the surface being examined, wherein the auxiliary optical arrangement includes first and second auxiliary optical systems for receiving light beams reflected respectively from the first and second points on the surface, independently of each other while the primary optical system receives both the light beams from the first and second points on the surface, and wherein a combined magnification of the primary optical system and the first auxiliary optical s

Abstract: A method of bringing a surface of a wafer into coincidence with an image plane of a projection optical system on the basis of the detection of the deviation of the wafer surface from a reference plane of a deviation detecting sensor, includes the steps of: moving the wafer surface along an optical axis of the projection optical system, to a position close to the reference plane; detecting a deviation of the wafer surface from the reference plane; and moving the wafer surface on the basis of the detection, to be brought into coincidence with the image plane of the projection optical system.

Abstract: A device for detecting the inclination of a surface to be examined is disclosed. The device includes an optical arrangement for directing a radiation beam to the surface to be examined, an arrangement for receiving a reflected beam from the surface to be examined and for outputting a signal corresponding to the inclination of the surface to be examined, and a device for changing the size of the beam on the surface to be examined or the size of the beam at a position which is substantially optically conjugate with the surface to be examined.

Abstract: A surface position detecting device usable with a semiconductor device manufacturing exposure apparatus having a projection lens system for projecting an image of a pattern of a mask onto a semiconductor wafer. The device is arranged to detect the position of the wafer relative to an image plane of the projection lens system, into which plane the wafer is to be positioned. The device includes a sensor for sensing light reflected by the wafer thereby to detect the position of the wafer. Also, in order to avoid detection errors due to interference of light caused by a resist layer formed on the wafer, the wafer is irradiated with different wavelengths of lights from plural light sources. In one aspect, the device uses a reference light which is directed to the sensor without reflection by the wafer in order to avoid an effect of drift of the sensor.

Abstract: A surface position detecting method wherein a surface on which a predetermined pattern is formed is measured by use of a measuring device to obtain a surface position data related thereto and, on the basis of the obtained surface position data, the surface position of the surface being examined is detected, the method including a measuring step for relatively moving the measuring device and the surface being examined, in a direction substantially parallel to the surface being examined, and sequentially measuring different points on the surface being examined by use of the measuring device; and a detecting step for detecting the surface position of the surface being examined, in a direction substantially perpendicular thereto, on the basis of a plurality of surface position data obtained through the measuring step.

Abstract: A surface position detecting method, including the steps of: detecting a surface shape of a first wafer having a pattern formed thereon or a surface shape of a second wafer having a pattern which is substantially of the same structure as that of the pattern of the first wafer; detecting, on the basis of detection of the surface shape, an error which might be caused at the time of detection of a surface position of the first wafer in dependence upon the structure of the pattern thereof; and detecting the surface position of the first wafer while correcting the detected error.

Abstract: A projection exposure apparatus including a mask stage for supporting a mask, a wafer stage for supporting a wafer, and a projection optical system for projecting, on the wafer, an image of a circuit pattern of the mask, is disclosed. There are provided a surface position detecting system for detecting position of a surface of the water with respect to a direction of an optical axis of the projection optical system, an adjusting device for adjusting an interval between the wafer and the projection optical system, to position the wafer surface at a focus position of the projection optical system, and an outputting portion operable to direct a light beam to a reflection surface, provided at a predetermined site on the wafer stage, and to receive reflection light coming from the reflection surface through the projection optical system, the outputting portion producing a signal corresponding to a positional relationship between the reflection surface and the focus position of the projection optical system.

Abstract: An autofocusing system, usable with a projection optical system for projecting a pattern of a first object upon a second object, for positioning the surface of the second object with respect to an imaging plane of the projection optical system is disclosed, wherein the surface of the second object is illuminated; wherein an image of the second object is formed on a predetermined plane by use of the projection optical system; and wherein the interval between the imaging plane of the projection optical system and the surface of the second object with respect to the direction of an optical axis of the projection optical system is adjusted on the basis of the state of the image of the second object formed on the predetermined plane, such that the surface of the second object can be positioned on the imaging plane of the projection optical system.